JP2007519256A - ドープされた部分を有する堆積チャネル領域を含むトランジスタ - Google Patents
ドープされた部分を有する堆積チャネル領域を含むトランジスタ Download PDFInfo
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- 239000012535 impurity Substances 0.000 claims abstract description 28
- 239000003989 dielectric material Substances 0.000 claims abstract description 17
- 239000010409 thin film Substances 0.000 claims description 45
- 239000000463 material Substances 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000012212 insulator Substances 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000001965 increasing effect Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052787 antimony Inorganic materials 0.000 description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001552 radio frequency sputter deposition Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
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- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
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- H01L29/1054—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a variation of the composition, e.g. channel with strained layer for increasing the mobility
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Abstract
Description
本出願は、2003年7月25日に出願され、参照によって本明細書に組み込まれる同時係属中の特許出願第60/490,239号からの優先権を主張するものである。
Claims (10)
- ソース電極(20、62)と、
ドレイン電極(22、64)と、
ゲート電極(12、60)と、
堆積薄膜チャネル領域(18、80)であって、不純物がドープされている部分(82)を有し、これにより、該チャネル領域(18、80)の残りの部分に対して当該部分(82)内の固定電荷密度が変更されており、前記ソース電極(20、62)と前記ドレイン電極(22、64)との間に配置されている堆積薄膜チャネル領域(18、80)と、
前記ゲート電極(12、60)を前記チャネル領域(18、80)から電気的に分離する誘電体材料(16、70)とを備えている、薄膜トランジスタ(10、40、42、44、46)。 - 前記チャネル領域(18、80)が、二元酸化物半導体材料から形成される堆積層である、請求項1に記載の薄膜トランジスタ(10、40、42、44、46)。
- 前記不純物が、前記チャネル領域の前記部分(82)内の正の固定電荷密度を高めるドナー型の不純物である、請求項2に記載の薄膜トランジスタ(10、40、42、44、46)。
- 前記不純物が、前記チャネル領域の前記部分(82)内の負の固定電荷密度を高めるアクセプタ型の不純物である、請求項2に記載の薄膜トランジスタ(10、40、42、44、46)。
- ソース電極(20、62)と、
ドレイン電極(22、64)と、
ゲート電極(12、60)と、
誘電性絶縁体(16、70)と、
堆積薄膜半導電性チャネル(18、80)とを備えており、
前記電極(20、62、22、64、12、60)、前記誘電性絶縁体(16、70)および前記半導電性チャネル(18、80)が、当該誘電性絶縁体(16、70)が前記ゲート電極(12、60)を前記半導電性チャネル(18、80)からかつ前記ソース電極(20、62)および前記ドレイン電極(22、64)から絶縁するように配置されており、
前記半導電性チャネル(18、80)が、第1の部分および第2の部分を含み、該第1の部分が前記第2の部分とは異なる状態にドープされ、前記薄膜トランジスタ(10、40、42、44、46)をオンに切り替えるために必要なゲート閾値電圧の所望の変化を達成する、薄膜トランジスタ(10、40、42、44、46)。 - ゲート電極(12、60)と、
ソース電極(20、62)と、
ドレイン電極(22、64)と、
前記ソース電極(20、62)と前記ドレイン電極(22、64)との間に、選択的に制御可能な導電特性を有する半導電性電気経路(18、80)を設けるための手段と、
前記ゲート電極(12、60)を、前記半導電性電気経路(18、80)からかつ前記ソース電極(20、62)および前記ドレイン電極(22、64)から絶縁するための誘電体(16、70)を設けるための手段とを備えており、
前記半導電性電気経路(18、80)を設けるための手段が、非境界領域と、該非境界領域とは異なる状態にドープされる境界領域(82)とを含み、該境界領域(82)が、前記非境界領域よりも前記誘電体(16、70)を設けるための手段に近接し、当該非境界領域には、前記非境界領域に対して前記境界領域(82)内の固定電荷密度を変更するように不純物がドープされ、該不純物が、該薄膜トランジスタ(10、40、42、44、46)をオンに切り替えるために必要なゲート閾値電圧の所望の変化を達成するように選択される、薄膜トランジスタ(10、40、42、44、46)。 - 薄膜トランジスタ(10、40、42、44、46)を製造する方法であって、
導電性材料からゲート電極(12、60)を形成し、
誘電体材料(16、70)を配設し、
ソース電極(20、62)およびドレイン電極(22、64)を形成し、前記誘電体材料(16、70)が、前記ゲート電極(12、60)を該ソース電極(20、62)からかつ該ドレイン電極(22、64)から物理的に分離するように配置され、
前記誘電体材料(16、70)に隣接して薄膜チャネル材料(18、80)を堆積し、前記誘電体材料(16、70)が、前記ゲート電極(12、60)と該薄膜チャネル材料(18、80)との間に物理的に介在するようにし、
前記薄膜チャネル材料(18、80)と前記誘電体材料(16、70)との間にある境界領域(82)に、残りのチャネル材料に対して該境界領域(82)内の固定電荷密度を変更するために不純物をドープすることを含む、方法。 - ゲート電極(12、60)、ソース電極(20、62)およびドレイン電極(22、64)を形成し、
誘電体材料(16、70)を配置し、該誘電体材料(16、70)が、前記ゲート電極(12、60)を前記ソース電極(20、62)からかつ前記ドレイン電極(22、64)から分離するようにし、
薄膜工程によって、チャネル材料(18、80)を配置し、該チャネル材料(18、80)が前記誘電体材料(16、70)と接触し、また前記チャネル材料(18、80)が前記ソース電極(20、62)および前記ドレイン電極(22、64)を分離するようにし、
前記チャネル材料(18、80)の一部分(82)をドープし、該部分(82)内の固定電荷密度が、前記チャネル材料(18、80)のドープされない部分に対して変化するようにすることを含むプロセスによって形成される、薄膜トランジスタ(10、40、42、44、46)。 - ソース電極(20、62)と、
ドレイン電極(22、64)と、
ゲート電極(12、60)と、
チャネル領域(18、80)であって、不純物がドープされている部分(82)を有し、これにより、該チャネル領域(18、80)の残りの部分に対して該部分(82)内の固定電荷密度を変更させている、チャネル領域(18、80)と、
前記ゲート電極(12、60)を前記チャネル領域(18、80)から電気的に分離する誘電体材料(16、70)とを備えており、
前記チャネル領域(18、80)の前記部分(82)が、前記チャネル領域(18、80)と前記誘電体材料(16、70)との間の境界に沿って、前記ソース電極(20、62)と前記ドレイン電極(22、64)との間に延在するように配置されている、トランジスタ(10、40、42、44、46)。 - 画像を表示するために協動するように構成される複数の表示素子(102)を備えており、該表示素子(102)がそれぞれ、当該表示素子(102)によって放射される光を制御するように構成されている薄膜トランジスタ(10、40、42、44、46)を含み、
前記薄膜トランジスタ(10、40、42、44、46)が、
ソース電極(20、62)と、
ドレイン電極(22、64)と、
ゲート電極(12、60)と、
堆積薄膜チャネル領域(18、80)であって、不純物がドープされている部分(82)を有し、これにより、該チャネル領域(18、80)の残りの部分に対して前記部分(82)内の固定電荷密度が変更されており、前記ソース電極(20、62)と前記ドレイン電極(22、64)との間に配置されている、堆積薄膜チャネル領域と、
前記ゲート電極(12、60)を前記チャネル領域(18、80)から電気的に分離する誘電体材料(16、70)とを備えている、ディスプレイ。
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Also Published As
Publication number | Publication date |
---|---|
US7564055B2 (en) | 2009-07-21 |
EP1714326A1 (en) | 2006-10-25 |
US20070267699A1 (en) | 2007-11-22 |
CN1906770A (zh) | 2007-01-31 |
KR101061712B1 (ko) | 2011-09-01 |
US7262463B2 (en) | 2007-08-28 |
US20050017302A1 (en) | 2005-01-27 |
WO2005074038A1 (en) | 2005-08-11 |
JP4919811B2 (ja) | 2012-04-18 |
KR20060132659A (ko) | 2006-12-21 |
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