JP6406926B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6406926B2 JP6406926B2 JP2014174705A JP2014174705A JP6406926B2 JP 6406926 B2 JP6406926 B2 JP 6406926B2 JP 2014174705 A JP2014174705 A JP 2014174705A JP 2014174705 A JP2014174705 A JP 2014174705A JP 6406926 B2 JP6406926 B2 JP 6406926B2
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- Prior art keywords
- transistor
- voltage
- gate
- oxide
- semiconductor
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Images
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
本実施の形態では、半導体装置の回路構成、及びその動作について説明する。
本実施の形態では、実施の形態1で説明した半導体装置10とは異なる構成の半導体装置について説明する。なお上記実施の形態1と同じ構成については、同じ符号を付し、説明を省略する。
本実施の形態では、上記実施の形態1及び2で説明した半導体装置を適用しうる表示装置について説明する。特に本実施の形態では、実施の形態1で説明した半導体装置10を適用した表示装置の構成例について説明する。
本実施の形態では、開示する発明の一態様に係る半導体装置が有するトランジスタの上面図及び断面図の構造について、図面を参照して説明する。なお本実施の形態では、トランジスタが有する半導体層として酸化物半導体を用い、スイッチ103として図2(B)で説明したトランジスタ103Bを有する構成の場合について、説明を行う。
本実施の形態では、上記実施の形態で説明したオフ電流の低いトランジスタの、チャネル形成領域となる半導体層に用いることのできるCAAC−OSについて説明する。
本実施の形態では、本発明の一態様の半導体装置を適用した表示モジュールについて、図11を用いて説明を行う。
本実施の形態では、上述の実施の形態で説明した半導体装置を電子機器に適用する例について、図9、図10を用いて説明する。上述の実施の形態で説明した半導体装置は、閾値電圧の制御と電流値の向上を両立できるトランジスタであり、該半導体装置を具備する電子機器は、トランジスタ特性及び信頼性に優れた電子機器とすることができる。
CL1 配線
CL2 配線
VC 電圧
VC1 電圧
VC2 電圧
GL ゲート線
SL ソース線
GOUT_n ゲート線
GOUT_1 ゲート線
N1 ノード
N2 ノード
SR パルス出力回路
SR_n パルス出力回路
SR_1 パルス出力回路
SR_2 パルス出力回路
VR ノード
VS ノード
VB バイアス電圧
T1 時刻
T2 時刻
T3 時刻
T4 時刻
T5 時刻
T6 時刻
T7 時刻
T8 時刻
T9 時刻
T10 時刻
10 半導体装置
20 半導体装置
101 トランジスタ
102 容量素子
103 スイッチ
103A トランジスタ
103B トランジスタ
200 表示装置
201 画素部
202 ゲート線駆動回路
203 ソース線駆動回路
204 コントロール回路
205 画素
211 トランジスタ
212 液晶素子
213 容量素子
221 トランジスタ
230 画素
231 トランジスタ
232 トランジスタ
233 EL素子
241 トランジスタ
242 容量素子
243 トランジスタ
251 トランジスタ
252 容量素子
253 トランジスタ
261 回路
301 トランジスタ
302 トランジスタ
400 基板
402 導電層
404 絶縁層
406 半導体層
408 導電層
410 酸化物絶縁層
412 酸化物絶縁層
414 窒化物絶縁層
416 絶縁層
418 導電層
420 開口部
422 開口部
8000 表示モジュール
8001 上部カバー
8002 下部カバー
8003 FPC
8004 タッチパネル
8005 FPC
8006 表示パネル
8007 バックライトユニット
8008 光源
8009 フレーム
8010 プリント基板
8011 バッテリー
9630 筐体
9631 表示部
9633 スピーカ
9635 操作キー
9636 接続端子
9638 マイクロフォン
9672 記録媒体読込部
9676 シャッターボタン
9677 受像部
9680 外部接続ポート
9681 ポインティングデバイス
Claims (3)
- チャネル形成領域を間に挟んで設けられた第1のゲート及び第2のゲートを有するトランジスタを有し、
前記第1のゲートに前記トランジスタをオフとする第1の電圧が印加される期間において、前記第2のゲートに閾値電圧を制御するための制御電圧が印加される期間を有し、
前記第1のゲートに前記トランジスタをオンとする第2の電圧が印加される期間において、前記第2のゲートを電気的に浮遊状態とし、かつ、前記第2のゲートに前記第1のゲートの電圧の変化に応じた電圧を前記制御電圧に加えた電圧が印加される期間を有する、半導体装置。 - チャネル形成領域を間に挟んで設けられた第1のゲート及び第2のゲートを有するトランジスタを有し、
前記第2のゲートは、前記第1のゲートに容量素子を介して電気的に接続されており、
前記第1のゲートに前記トランジスタをオフとする第1の電圧が印加される期間において、前記第2のゲートに閾値電圧を制御するための制御電圧が印加される期間を有し、
前記第1のゲートに前記トランジスタをオンとする第2の電圧が印加される期間において、前記第2のゲートを電気的に浮遊状態とし、かつ、前記第2のゲートに前記第1のゲートの電圧の変化に応じた電圧を前記制御電圧に加えた電圧が印加される期間を有する、半導体装置。 - 請求項1又は2において、
前記トランジスタは、酸化物半導体をチャネル形成領域となる半導体層に用いた、半導体装置。
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