IT1171402B - Transistor ad effeto di campo a barriera metallo-semiconduttorre conzona svuotata modificata - Google Patents
Transistor ad effeto di campo a barriera metallo-semiconduttorre conzona svuotata modificataInfo
- Publication number
- IT1171402B IT1171402B IT48933/81A IT4893381A IT1171402B IT 1171402 B IT1171402 B IT 1171402B IT 48933/81 A IT48933/81 A IT 48933/81A IT 4893381 A IT4893381 A IT 4893381A IT 1171402 B IT1171402 B IT 1171402B
- Authority
- IT
- Italy
- Prior art keywords
- metal
- field
- effect transistor
- modified zone
- empty
- Prior art date
Links
- 230000004888 barrier function Effects 0.000 title 1
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
- H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
- H01L29/66863—Lateral single gate transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT48933/81A IT1171402B (it) | 1981-07-20 | 1981-07-20 | Transistor ad effeto di campo a barriera metallo-semiconduttorre conzona svuotata modificata |
DE8282830172T DE3280244D1 (de) | 1981-07-20 | 1982-06-15 | Verfahren zur herstellung eines feldeffekttransistors mit einer geaenderten verarmungszone verursacht durch eine metallhalbleiter schottky sperre. |
EP82830172A EP0070810B1 (en) | 1981-07-20 | 1982-06-15 | Method of making a field effect transistor with a modified metal semiconductor schottky barrier depletion region |
US06/399,739 US4559238A (en) | 1981-07-20 | 1982-07-19 | Method of making a field effect transistor with modified Schottky barrier depletion region |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT48933/81A IT1171402B (it) | 1981-07-20 | 1981-07-20 | Transistor ad effeto di campo a barriera metallo-semiconduttorre conzona svuotata modificata |
Publications (2)
Publication Number | Publication Date |
---|---|
IT8148933A0 IT8148933A0 (it) | 1981-07-20 |
IT1171402B true IT1171402B (it) | 1987-06-10 |
Family
ID=11269077
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT48933/81A IT1171402B (it) | 1981-07-20 | 1981-07-20 | Transistor ad effeto di campo a barriera metallo-semiconduttorre conzona svuotata modificata |
Country Status (4)
Country | Link |
---|---|
US (1) | US4559238A (it) |
EP (1) | EP0070810B1 (it) |
DE (1) | DE3280244D1 (it) |
IT (1) | IT1171402B (it) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4694563A (en) * | 1981-01-29 | 1987-09-22 | Sumitomo Electric Industries, Ltd. | Process for making Schottky-barrier gate FET |
JPS6086866A (ja) * | 1983-10-19 | 1985-05-16 | Matsushita Electronics Corp | 電界効果トランジスタおよびその製造方法 |
JPS61220376A (ja) * | 1985-03-26 | 1986-09-30 | Sumitomo Electric Ind Ltd | ショットキゲート電界効果トランジスタの製造方法 |
US4889817A (en) * | 1985-08-08 | 1989-12-26 | Oki Electric Industry Co., Ltd. | Method of manufacturing schottky gate field transistor by ion implantation method |
US4640003A (en) * | 1985-09-30 | 1987-02-03 | The United States Of America As Represented By The Secretary Of The Navy | Method of making planar geometry Schottky diode using oblique evaporation and normal incidence proton bombardment |
FR2592225B1 (fr) * | 1985-12-20 | 1988-02-05 | Thomson Csf | Transistor hyperfrequence de puissance |
US4706377A (en) * | 1986-01-30 | 1987-11-17 | United Technologies Corporation | Passivation of gallium arsenide by nitrogen implantation |
US4833042A (en) * | 1988-01-27 | 1989-05-23 | Rockwell International Corporation | Nonalloyed ohmic contacts for n type gallium arsenide |
US5138406A (en) * | 1989-04-04 | 1992-08-11 | Eaton Corporation | Ion implantation masking method and devices |
US5030579A (en) * | 1989-04-04 | 1991-07-09 | Eaton Corporation | Method of making an FET by ion implantation through a partially opaque implant mask |
US5011785A (en) * | 1990-10-30 | 1991-04-30 | The United States Of America As Represented By The Secretary Of The Navy | Insulator assisted self-aligned gate junction |
EP0642175B1 (en) * | 1993-09-07 | 2004-04-28 | Murata Manufacturing Co., Ltd. | Semiconductor element with Schottky electrode and process for producing the same |
SE9700156D0 (sv) * | 1997-01-21 | 1997-01-21 | Abb Research Ltd | Junction termination for Si C Schottky diode |
US7262463B2 (en) * | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
US20050017244A1 (en) * | 2003-07-25 | 2005-01-27 | Randy Hoffman | Semiconductor device |
US7250627B2 (en) * | 2004-03-12 | 2007-07-31 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
US20110068348A1 (en) * | 2009-09-18 | 2011-03-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Thin body mosfet with conducting surface channel extensions and gate-controlled channel sidewalls |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4098921A (en) * | 1976-04-28 | 1978-07-04 | Cutler-Hammer | Tantalum-gallium arsenide schottky barrier semiconductor device |
US4056642A (en) * | 1976-05-14 | 1977-11-01 | Data General Corporation | Method of fabricating metal-semiconductor interfaces |
US4170666A (en) * | 1977-05-11 | 1979-10-09 | Rockwell International Corporation | Method for reducing surface recombination velocities in III-V compound semiconductors |
US4172906A (en) * | 1977-05-11 | 1979-10-30 | Rockwell International Corporation | Method for passivating III-V compound semiconductors |
US4244097A (en) * | 1979-03-15 | 1981-01-13 | Hughes Aircraft Company | Schottky-gate field-effect transistor and fabrication process therefor |
FR2460040A1 (fr) * | 1979-06-22 | 1981-01-16 | Thomson Csf | Procede pour realiser une diode schottky a tenue en tension amelioree |
FR2461358A1 (fr) * | 1979-07-06 | 1981-01-30 | Thomson Csf | Procede de realisation d'un transistor a effet de champ a grille auto-alignee, et transistor obtenu par ce procede |
US4426765A (en) * | 1981-08-24 | 1984-01-24 | Trw Inc. | Process for fabrication of ohmic contacts in compound semiconductor devices |
-
1981
- 1981-07-20 IT IT48933/81A patent/IT1171402B/it active
-
1982
- 1982-06-15 DE DE8282830172T patent/DE3280244D1/de not_active Expired - Fee Related
- 1982-06-15 EP EP82830172A patent/EP0070810B1/en not_active Expired
- 1982-07-19 US US06/399,739 patent/US4559238A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US4559238A (en) | 1985-12-17 |
EP0070810A3 (en) | 1986-04-02 |
EP0070810A2 (en) | 1983-01-26 |
DE3280244D1 (de) | 1990-10-25 |
EP0070810B1 (en) | 1990-09-19 |
IT8148933A0 (it) | 1981-07-20 |
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