JP2007073700A - 半導体素子 - Google Patents
半導体素子 Download PDFInfo
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- JP2007073700A JP2007073700A JP2005258269A JP2005258269A JP2007073700A JP 2007073700 A JP2007073700 A JP 2007073700A JP 2005258269 A JP2005258269 A JP 2005258269A JP 2005258269 A JP2005258269 A JP 2005258269A JP 2007073700 A JP2007073700 A JP 2007073700A
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- 239000000758 substrate Substances 0.000 claims abstract description 97
- 239000010409 thin film Substances 0.000 claims abstract description 37
- 230000008602 contraction Effects 0.000 claims abstract description 36
- 239000002985 plastic film Substances 0.000 claims abstract description 20
- 229920006255 plastic film Polymers 0.000 claims abstract description 20
- 229910007541 Zn O Inorganic materials 0.000 claims description 17
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- 229910052760 oxygen Inorganic materials 0.000 description 5
- 229920003023 plastic Polymers 0.000 description 5
- 239000004033 plastic Substances 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
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- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 108091006149 Electron carriers Proteins 0.000 description 2
- 229910007604 Zn—Sn—O Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
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- 229910052725 zinc Inorganic materials 0.000 description 2
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- 229920000089 Cyclic olefin copolymer Polymers 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910003855 HfAlO Inorganic materials 0.000 description 1
- 229910004129 HfSiO Inorganic materials 0.000 description 1
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- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910018956 Sn—In Inorganic materials 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
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- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910021480 group 4 element Inorganic materials 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000000113 methacrylic resin Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 230000001443 photoexcitation Effects 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229920001707 polybutylene terephthalate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920005649 polyetherethersulfone Polymers 0.000 description 1
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- 229920000573 polyethylene Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
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- 229920000098 polyolefin Polymers 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 229920001955 polyphenylene ether Polymers 0.000 description 1
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- 229920006375 polyphtalamide Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- ILJSQTXMGCGYMG-UHFFFAOYSA-N triacetic acid Chemical compound CC(=O)CC(=O)CC(O)=O ILJSQTXMGCGYMG-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1296—Multistep manufacturing methods adapted to increase the uniformity of device parameters
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
【解決手段】 基板の面方向で熱収縮率、または熱膨張係数の異方性を有するプラスチックフィルム基板1上に薄膜トランジスタし、基板の熱収縮率、または熱膨張係数の最も大きい方向7と薄膜トランジスタのチャネルの電流を流す方向8とが非平行となるように、チャネルを形成する。それにより、プラスチックフィルム基板上に安定かつ均一な電気特性を持つ薄膜トランジスタを提供する。
【選択図】 図2
Description
前記基板の熱収縮率または熱膨張係数の最も大きい方向と前記半導体素子の電流の流れる方向とが非平行であることを特徴とする。
前記基板の熱収縮率または熱膨張係数の最も小さい方向と前記半導体素子の電流の流れる方向とが略平行であることを特徴とする。
(比較例)
実施例1と同じ寸法のTFT素子を製作し、ただθ角は0°にする。図7に、室温下で測定したTFT素子(チャネル長:3mm、チャネル幅:30mm、θ角:0°)のIDS電流−VDS電圧特性を示す。図8に室温下で測定した同TFT素子IDS電流−VGS電圧の電流−電圧特性を示す。そこで、VDS= 6 V印加時におけるゲート電圧VGSの閾値は約0.72 Vであった。また、VGS=6 V時には、IDS=1.69× 10-4Aの電流が流れた。また、サブスレッシュホルドスロープ(Subthreshold slope)特性のS値は約0.20V/decであった。また、出力特性から電界効果移動度を算出したところ、飽和領域において約15.6 cm2(V・sec)-1の電界効果移動度が得られた。
2 ゲート電極
3 ソース電極
4 ドレイン電極
5 活性層(チャネル層)
6 ゲート絶縁膜
7 基板の熱収縮率、または熱膨張係数の最も大きい方向
8 半導体素子のチャネルの電流を流す方向
9 基板の熱収縮率の最も大きい方向と半導体素子のチャネルの電流を流す方向の成す角θ
Claims (6)
- 基板面方向に熱収縮率または熱膨張係数の異方性を有する基板の該基板面上に形成された半導体素子であって、
前記基板の熱収縮率または熱膨張係数の最も大きい方向と前記半導体素子の電流の流れる方向とが非平行であることを特徴とする半導体素子。 - 基板面方向に熱収縮率または熱膨張係数の異方性を有する基板の該基板面上に形成された半導体素子であって、
前記基板の熱収縮率または熱膨張係数の最も小さい方向と前記半導体素子の電流の流れる方向とが略平行であることを特徴とする半導体素子。 - 前記半導体素子は活性層にIn-Ga-Zn-Oを含む透明酸化物半導体を用いたことを特徴とする請求項1又は2に記載の半導体素子。
- 前記基板は高分子樹脂であることを特徴とする請求項1、2又は3に記載の半導体素子。
- 前記基板は熱可塑性樹脂をシート状に溶融成型し、それを縦、横の二軸に延伸するプラスチックフィルムであることを特徴とする請求項1、2又は3に記載の半導体素子。
- 前記半導体素子は薄膜トランジスタである請求項1から5のいずれか1項に記載の半導体素子。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005258269A JP4280736B2 (ja) | 2005-09-06 | 2005-09-06 | 半導体素子 |
US12/063,430 US20090114910A1 (en) | 2005-09-06 | 2006-08-24 | Semiconductor device |
KR1020087008261A KR100998390B1 (ko) | 2005-09-06 | 2006-08-24 | 반도체 소자 |
CN2006800324606A CN101258606B (zh) | 2005-09-06 | 2006-08-24 | 半导体器件 |
EP06783131A EP1927138B1 (en) | 2005-09-06 | 2006-08-24 | Semiconductor device |
AT06783131T ATE546838T1 (de) | 2005-09-06 | 2006-08-24 | Halbleiterbauelement |
PCT/JP2006/317150 WO2007029584A1 (en) | 2005-09-06 | 2006-08-24 | Semiconductor device |
US12/948,683 US8039836B2 (en) | 2005-09-06 | 2010-11-17 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005258269A JP4280736B2 (ja) | 2005-09-06 | 2005-09-06 | 半導体素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007073700A true JP2007073700A (ja) | 2007-03-22 |
JP4280736B2 JP4280736B2 (ja) | 2009-06-17 |
Family
ID=37835704
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005258269A Active JP4280736B2 (ja) | 2005-09-06 | 2005-09-06 | 半導体素子 |
Country Status (6)
Country | Link |
---|---|
US (2) | US20090114910A1 (ja) |
EP (1) | EP1927138B1 (ja) |
JP (1) | JP4280736B2 (ja) |
KR (1) | KR100998390B1 (ja) |
CN (1) | CN101258606B (ja) |
WO (1) | WO2007029584A1 (ja) |
Cited By (14)
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JP2007123699A (ja) * | 2005-10-31 | 2007-05-17 | Toppan Printing Co Ltd | 薄膜トランジスタとその製造方法 |
JP2008249968A (ja) * | 2007-03-30 | 2008-10-16 | Fujifilm Corp | アクティブマトリクス方式の表示装置及びその製造方法 |
JP2009141001A (ja) * | 2007-12-04 | 2009-06-25 | Canon Inc | 酸化物半導体薄膜トランジスタ |
JPWO2009084537A1 (ja) * | 2007-12-27 | 2011-05-19 | Jx日鉱日石金属株式会社 | a−IGZO酸化物薄膜の製造方法 |
JP2011135061A (ja) * | 2009-11-27 | 2011-07-07 | Semiconductor Energy Lab Co Ltd | 半導体装置、及び半導体装置の作製方法 |
JP2012004234A (ja) * | 2010-06-15 | 2012-01-05 | Kaneka Corp | 薄膜トランジスタ |
JP2012064687A (ja) * | 2010-09-15 | 2012-03-29 | Nagoya Univ | 電界効果トランジスタ及び電界効果トランジスタの製造方法 |
JP2012119423A (ja) * | 2010-11-30 | 2012-06-21 | Toray Ind Inc | ゲート絶縁材料、ゲート絶縁膜、および電界効果型トランジスタ。 |
JP2012212747A (ja) * | 2011-03-31 | 2012-11-01 | Fujifilm Corp | 薄膜トランジスタの製造装置およびその製造方法 |
US8399962B2 (en) | 2010-05-18 | 2013-03-19 | Panasonic Corporation | Semiconductor chip and process for production thereof |
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- 2006-08-24 WO PCT/JP2006/317150 patent/WO2007029584A1/en active Application Filing
- 2006-08-24 KR KR1020087008261A patent/KR100998390B1/ko active IP Right Grant
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Publication number | Publication date |
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JP4280736B2 (ja) | 2009-06-17 |
CN101258606A (zh) | 2008-09-03 |
KR20080053362A (ko) | 2008-06-12 |
EP1927138A1 (en) | 2008-06-04 |
US20110062439A1 (en) | 2011-03-17 |
US8039836B2 (en) | 2011-10-18 |
US20090114910A1 (en) | 2009-05-07 |
KR100998390B1 (ko) | 2010-12-03 |
CN101258606B (zh) | 2011-09-21 |
EP1927138A4 (en) | 2008-10-29 |
EP1927138B1 (en) | 2012-02-22 |
WO2007029584A1 (en) | 2007-03-15 |
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