SG11201606647PA - Circuit system - Google Patents

Circuit system

Info

Publication number
SG11201606647PA
SG11201606647PA SG11201606647PA SG11201606647PA SG11201606647PA SG 11201606647P A SG11201606647P A SG 11201606647PA SG 11201606647P A SG11201606647P A SG 11201606647PA SG 11201606647P A SG11201606647P A SG 11201606647PA SG 11201606647P A SG11201606647P A SG 11201606647PA
Authority
SG
Singapore
Prior art keywords
circuit system
circuit
Prior art date
Application number
SG11201606647PA
Inventor
Shunpei Yamazaki
Yutaka Shionoiri
Tomoaki Atsumi
Shuhei Nagatsuka
Yutaka Okazaki
Suguru Hondo
Original Assignee
Semiconductor Energy Lab Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab Co Ltd filed Critical Semiconductor Energy Lab Co Ltd
Publication of SG11201606647PA publication Critical patent/SG11201606647PA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
    • H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Dram (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
SG11201606647PA 2014-03-14 2015-03-04 Circuit system SG11201606647PA (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2014052263 2014-03-14
JP2014052864 2014-03-16
JP2014055459 2014-03-18
JP2014070518 2014-03-28
JP2014093321 2014-04-30
PCT/IB2015/051567 WO2015136412A1 (en) 2014-03-14 2015-03-04 Circuit system

Publications (1)

Publication Number Publication Date
SG11201606647PA true SG11201606647PA (en) 2016-09-29

Family

ID=54069743

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201606647PA SG11201606647PA (en) 2014-03-14 2015-03-04 Circuit system

Country Status (6)

Country Link
US (1) US9685500B2 (en)
JP (5) JP6619559B2 (en)
KR (3) KR102414469B1 (en)
SG (1) SG11201606647PA (en)
TW (1) TWI646534B (en)
WO (1) WO2015136412A1 (en)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9716100B2 (en) * 2014-03-14 2017-07-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for driving semiconductor device, and electronic device
JP6901831B2 (en) 2015-05-26 2021-07-14 株式会社半導体エネルギー研究所 Memory system and information processing system
WO2017068478A1 (en) 2015-10-22 2017-04-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device or memory device including the semiconductor device
JP2017108397A (en) 2015-11-30 2017-06-15 株式会社半導体エネルギー研究所 Signal processing circuit, and semiconductor device with the signal processing circuit
JP6807725B2 (en) * 2015-12-22 2021-01-06 株式会社半導体エネルギー研究所 Semiconductor devices, display panels, and electronic devices
US10177142B2 (en) * 2015-12-25 2019-01-08 Semiconductor Energy Laboratory Co., Ltd. Circuit, logic circuit, processor, electronic component, and electronic device
WO2017115209A1 (en) * 2015-12-28 2017-07-06 株式会社半導体エネルギー研究所 Oxide and method for producing same
JP6858549B2 (en) 2015-12-28 2021-04-14 株式会社半導体エネルギー研究所 Semiconductor device, storage device
WO2017130082A1 (en) 2016-01-29 2017-08-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
US10014325B2 (en) * 2016-03-10 2018-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP2017224676A (en) * 2016-06-14 2017-12-21 株式会社ジャパンディスプレイ Semiconductor device and display device
JP6715696B2 (en) * 2016-06-22 2020-07-01 株式会社ワコム Electronic pen
KR20180055701A (en) 2016-11-17 2018-05-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method of manufacturing the same
KR102658411B1 (en) * 2016-12-30 2024-04-16 엘지디스플레이 주식회사 Oxide tft, method of manufacturing the same, and display panel and display apparatus using the same
KR102584150B1 (en) * 2017-12-26 2023-09-27 엘지디스플레이 주식회사 Thin film transistor and organic light emitting display device comprising the same
US10147614B1 (en) * 2018-01-08 2018-12-04 United Microelectronics Corp. Oxide semiconductor transistor and method of manufacturing the same
KR20200052782A (en) * 2018-11-07 2020-05-15 엘지디스플레이 주식회사 Display apparatus
US10950545B2 (en) * 2019-03-08 2021-03-16 International Business Machines Corporation Circuit wiring techniques for stacked transistor structures
US11374494B2 (en) * 2019-03-21 2022-06-28 Infineon Technologies LLC General-purpose analog switch with a controlled differential equalization voltage-slope limit
WO2021053473A1 (en) * 2019-09-20 2021-03-25 株式会社半導体エネルギー研究所 Semiconductor device and method for manufacturing semiconductor device
US11379231B2 (en) * 2019-10-25 2022-07-05 Semiconductor Energy Laboratory Co., Ltd. Data processing system and operation method of data processing system
US20220392925A1 (en) * 2019-11-15 2022-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US11296224B1 (en) * 2021-06-16 2022-04-05 Purdue Research Foundation Non-volatile polarization induced strain coupled 2D FET memory
WO2023058763A1 (en) 2021-10-08 2023-04-13 株式会社小糸製作所 Cleaner nozzle
WO2023148571A1 (en) * 2022-02-04 2023-08-10 株式会社半導体エネルギー研究所 Semiconductor device
WO2023161757A1 (en) * 2022-02-25 2023-08-31 株式会社半導体エネルギー研究所 Semiconductor device
WO2023170511A1 (en) * 2022-03-11 2023-09-14 株式会社半導体エネルギー研究所 Semiconductor device, storage device, and electronic device
WO2023187544A1 (en) * 2022-03-31 2023-10-05 株式会社半導体エネルギー研究所 Semiconductor device, memory device, and electronic device

Family Cites Families (154)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60198861A (en) 1984-03-23 1985-10-08 Fujitsu Ltd Thin film transistor
JPH0244256B2 (en) 1987-01-28 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho INGAZN2O5DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO
JPS63210023A (en) 1987-02-24 1988-08-31 Natl Inst For Res In Inorg Mater Compound having laminar structure of hexagonal crystal system expressed by ingazn4o7 and its production
JPH0244258B2 (en) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho INGAZN3O6DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO
JPH0244260B2 (en) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho INGAZN5O8DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO
JPH0244262B2 (en) 1987-02-27 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho INGAZN6O9DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO
JPH0244263B2 (en) 1987-04-22 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho INGAZN7O10DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO
JPH02271657A (en) 1989-04-13 1990-11-06 Nec Corp Double active layer cmos inverter
JPH0442495A (en) * 1990-06-07 1992-02-13 Mitsubishi Electric Corp Semiconductor memory device
JPH05251705A (en) 1992-03-04 1993-09-28 Fuji Xerox Co Ltd Thin-film transistor
JP3479375B2 (en) 1995-03-27 2003-12-15 科学技術振興事業団 Metal oxide semiconductor device in which a pn junction is formed with a thin film transistor made of a metal oxide semiconductor such as cuprous oxide, and methods for manufacturing the same
DE69635107D1 (en) 1995-08-03 2005-09-29 Koninkl Philips Electronics Nv SEMICONDUCTOR ARRANGEMENT WITH A TRANSPARENT CIRCUIT ELEMENT
JP3625598B2 (en) 1995-12-30 2005-03-02 三星電子株式会社 Manufacturing method of liquid crystal display device
JP4170454B2 (en) 1998-07-24 2008-10-22 Ｈｏｙａ株式会社 Article having transparent conductive oxide thin film and method for producing the same
JP2000150861A (en) 1998-11-16 2000-05-30 Tdk Corp Oxide thin film
JP3276930B2 (en) 1998-11-17 2002-04-22 科学技術振興事業団 Transistor and semiconductor device
KR100699421B1 (en) * 1999-02-23 2007-03-26 가부시키가이샤 히타치세이사쿠쇼 Semiconductor integrated circuit device
TW460731B (en) 1999-09-03 2001-10-21 Ind Tech Res Inst Electrode structure and production method of wide viewing angle LCD
JP4089858B2 (en) 2000-09-01 2008-05-28 国立大学法人東北大学 Semiconductor device
KR20020038482A (en) 2000-11-15 2002-05-23 모리시타 요이찌 Thin film transistor array, method for producing the same, and display panel using the same
JP3997731B2 (en) 2001-03-19 2007-10-24 富士ゼロックス株式会社 Method for forming a crystalline semiconductor thin film on a substrate
JP2002289859A (en) 2001-03-23 2002-10-04 Minolta Co Ltd Thin-film transistor
JP4090716B2 (en) 2001-09-10 2008-05-28 雅司 川崎 Thin film transistor and matrix display device
JP3925839B2 (en) 2001-09-10 2007-06-06 シャープ株式会社 Semiconductor memory device and test method thereof
JP4164562B2 (en) 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 Transparent thin film field effect transistor using homologous thin film as active layer
US7061014B2 (en) 2001-11-05 2006-06-13 Japan Science And Technology Agency Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
JP4083486B2 (en) 2002-02-21 2008-04-30 独立行政法人科学技術振興機構 Method for producing LnCuO (S, Se, Te) single crystal thin film
CN1445821A (en) 2002-03-15 2003-10-01 三洋电机株式会社 Forming method of ZnO film and ZnO semiconductor layer, semiconductor element and manufacturing method thereof
JP3933591B2 (en) 2002-03-26 2007-06-20 淳二 城戸 Organic electroluminescent device
US7339187B2 (en) 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
JP2004022625A (en) 2002-06-13 2004-01-22 Murata Mfg Co Ltd Manufacturing method of semiconductor device and its manufacturing method
US7105868B2 (en) 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
KR20040008614A (en) * 2002-07-19 2004-01-31 주식회사 하이닉스반도체 Ferroelectric Random Access Memory and method for fabricating the same
US7067843B2 (en) 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
JP4166105B2 (en) 2003-03-06 2008-10-15 シャープ株式会社 Semiconductor device and manufacturing method thereof
JP2004273732A (en) 2003-03-07 2004-09-30 Sharp Corp Active matrix substrate and its producing process
JP4108633B2 (en) 2003-06-20 2008-06-25 シャープ株式会社 THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE
US7262463B2 (en) 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
US7145174B2 (en) 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
US7297977B2 (en) 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
EP1737044B1 (en) 2004-03-12 2014-12-10 Japan Science and Technology Agency Amorphous oxide and thin film transistor
US7282782B2 (en) 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
US7211825B2 (en) 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
JP2006100760A (en) 2004-09-02 2006-04-13 Casio Comput Co Ltd Thin-film transistor and its manufacturing method
US7285501B2 (en) 2004-09-17 2007-10-23 Hewlett-Packard Development Company, L.P. Method of forming a solution processed device
US7298084B2 (en) 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
US7863611B2 (en) 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
US7829444B2 (en) 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
US7872259B2 (en) 2004-11-10 2011-01-18 Canon Kabushiki Kaisha Light-emitting device
US7453065B2 (en) 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
US7791072B2 (en) 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
AU2005302962B2 (en) 2004-11-10 2009-05-07 Canon Kabushiki Kaisha Amorphous oxide and field effect transistor
CA2585071A1 (en) 2004-11-10 2006-05-18 Canon Kabushiki Kaisha Field effect transistor employing an amorphous oxide
US7579224B2 (en) 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
GB0501733D0 (en) 2005-01-27 2005-03-02 British American Tobacco Co Packages
TWI445178B (en) 2005-01-28 2014-07-11 Semiconductor Energy Lab Semiconductor device, electronic device, and method of manufacturing semiconductor device
TWI505473B (en) 2005-01-28 2015-10-21 Semiconductor Energy Lab Semiconductor device, electronic device, and method of manufacturing semiconductor device
US7858451B2 (en) 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20060197092A1 (en) 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
US8681077B2 (en) 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
WO2006105077A2 (en) 2005-03-28 2006-10-05 Massachusetts Institute Of Technology Low voltage thin film transistor with high-k dielectric material
US7645478B2 (en) 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
US8300031B2 (en) 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
JP2006344849A (en) 2005-06-10 2006-12-21 Casio Comput Co Ltd Thin film transistor
US7691666B2 (en) 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7402506B2 (en) 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7507618B2 (en) 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
KR100711890B1 (en) 2005-07-28 2007-04-25 삼성에스디아이 주식회사 Organic Light Emitting Display and Fabrication Method for the same
JP2007059128A (en) 2005-08-23 2007-03-08 Canon Inc Organic electroluminescent display device and manufacturing method thereof
JP4850457B2 (en) 2005-09-06 2012-01-11 キヤノン株式会社 Thin film transistor and thin film diode
JP5116225B2 (en) 2005-09-06 2013-01-09 キヤノン株式会社 Manufacturing method of oxide semiconductor device
JP4560502B2 (en) 2005-09-06 2010-10-13 キヤノン株式会社 Field effect transistor
JP2007073705A (en) 2005-09-06 2007-03-22 Canon Inc Oxide-semiconductor channel film transistor and its method of manufacturing same
JP4280736B2 (en) 2005-09-06 2009-06-17 キヤノン株式会社 Semiconductor element
JP5078246B2 (en) 2005-09-29 2012-11-21 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method of semiconductor device
JP5064747B2 (en) 2005-09-29 2012-10-31 株式会社半導体エネルギー研究所 Semiconductor device, electrophoretic display device, display module, electronic device, and method for manufacturing semiconductor device
EP1998375A3 (en) 2005-09-29 2012-01-18 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method
JP2007102483A (en) * 2005-10-04 2007-04-19 Toshiba Corp Semiconductor integrated circuit
JP5037808B2 (en) 2005-10-20 2012-10-03 キヤノン株式会社 Field effect transistor using amorphous oxide, and display device using the transistor
KR101117948B1 (en) 2005-11-15 2012-02-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method of Manufacturing a Liquid Crystal Display Device
TWI292281B (en) 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
US7867636B2 (en) 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4977478B2 (en) 2006-01-21 2012-07-18 三星電子株式会社 ZnO film and method of manufacturing TFT using the same
US7576394B2 (en) 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
US7977169B2 (en) 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
KR20070101595A (en) 2006-04-11 2007-10-17 삼성전자주식회사 Zno thin film transistor
JP5135709B2 (en) 2006-04-28 2013-02-06 凸版印刷株式会社 Thin film transistor and manufacturing method thereof
US7692223B2 (en) 2006-04-28 2010-04-06 Semiconductor Energy Laboratory Co., Ltd Semiconductor device and method for manufacturing the same
JP5285235B2 (en) 2006-04-28 2013-09-11 株式会社半導体エネルギー研究所 Semiconductor device
US20070252928A1 (en) 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
JP5028033B2 (en) 2006-06-13 2012-09-19 キヤノン株式会社 Oxide semiconductor film dry etching method
JP4999400B2 (en) 2006-08-09 2012-08-15 キヤノン株式会社 Oxide semiconductor film dry etching method
JP4609797B2 (en) 2006-08-09 2011-01-12 Ｎｅｃ液晶テクノロジー株式会社 Thin film device and manufacturing method thereof
US7663165B2 (en) 2006-08-31 2010-02-16 Aptina Imaging Corporation Transparent-channel thin-film transistor-based pixels for high-performance image sensors
JP4332545B2 (en) 2006-09-15 2009-09-16 キヤノン株式会社 Field effect transistor and manufacturing method thereof
JP5164357B2 (en) 2006-09-27 2013-03-21 キヤノン株式会社 Semiconductor device and manufacturing method of semiconductor device
JP4274219B2 (en) 2006-09-27 2009-06-03 セイコーエプソン株式会社 Electronic devices, organic electroluminescence devices, organic thin film semiconductor devices
US7622371B2 (en) 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
US8891264B1 (en) * 2006-11-15 2014-11-18 Thin Film Electronics Asa Series circuits and devices
US7772021B2 (en) 2006-11-29 2010-08-10 Samsung Electronics Co., Ltd. Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
JP2008140684A (en) 2006-12-04 2008-06-19 Toppan Printing Co Ltd Color el display, and its manufacturing method
KR101303578B1 (en) 2007-01-05 2013-09-09 삼성전자주식회사 Etching method of thin film
US8207063B2 (en) 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
KR100851215B1 (en) 2007-03-14 2008-08-07 삼성에스디아이 주식회사 Thin film transistor and organic light-emitting dislplay device having the thin film transistor
US7795613B2 (en) 2007-04-17 2010-09-14 Toppan Printing Co., Ltd. Structure with transistor
KR101325053B1 (en) 2007-04-18 2013-11-05 삼성디스플레이 주식회사 Thin film transistor substrate and manufacturing method thereof
KR20080094300A (en) 2007-04-19 2008-10-23 삼성전자주식회사 Thin film transistor and method of manufacturing the same and flat panel display comprising the same
KR101334181B1 (en) 2007-04-20 2013-11-28 삼성전자주식회사 Thin Film Transistor having selectively crystallized channel layer and method of manufacturing the same
US8274078B2 (en) 2007-04-25 2012-09-25 Canon Kabushiki Kaisha Metal oxynitride semiconductor containing zinc
JP5294651B2 (en) 2007-05-18 2013-09-18 キヤノン株式会社 Inverter manufacturing method and inverter
KR101345376B1 (en) 2007-05-29 2013-12-24 삼성전자주식회사 Fabrication method of ZnO family Thin film transistor
JP5430846B2 (en) 2007-12-03 2014-03-05 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US8202365B2 (en) 2007-12-17 2012-06-19 Fujifilm Corporation Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film
JP5305696B2 (en) 2008-03-06 2013-10-02 キヤノン株式会社 Semiconductor device processing method
JP4623179B2 (en) 2008-09-18 2011-02-02 ソニー株式会社 Thin film transistor and manufacturing method thereof
JP5451280B2 (en) 2008-10-09 2014-03-26 キヤノン株式会社 Wurtzite crystal growth substrate, manufacturing method thereof, and semiconductor device
KR101065407B1 (en) 2009-08-25 2011-09-16 삼성모바일디스플레이주식회사 Organic light emitting diode display and method for manufacturing the same
EP2477181A4 (en) * 2009-09-07 2013-03-20 Sharp Kk Pixel circuit and display device
CN103794612B (en) 2009-10-21 2018-09-07 株式会社半导体能源研究所 Semiconductor device
KR20170130641A (en) 2009-10-21 2017-11-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device and electronic device including the same
KR102281043B1 (en) * 2009-10-29 2021-07-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
CN102668077B (en) * 2009-11-20 2015-05-13 株式会社半导体能源研究所 Nonvolatile latch circuit and logic circuit, and semiconductor device using the same
CN102668063B (en) * 2009-11-20 2015-02-18 株式会社半导体能源研究所 Semiconductor device
WO2011068028A1 (en) * 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, semiconductor device, and method for manufacturing the same
JP5497417B2 (en) * 2009-12-10 2014-05-21 富士フイルム株式会社 THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, AND APPARATUS HAVING THE THIN FILM TRANSISTOR
KR101894400B1 (en) * 2009-12-28 2018-09-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Memory device and semiconductor device
KR101299256B1 (en) * 2010-01-29 2013-08-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor memory device
KR101921618B1 (en) 2010-02-05 2018-11-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method of driving semiconductor device
KR101939713B1 (en) * 2010-02-19 2019-01-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
CN107045235A (en) * 2010-02-26 2017-08-15 株式会社半导体能源研究所 Liquid crystal display device
KR101840797B1 (en) 2010-03-19 2018-03-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor memory device
JP5631750B2 (en) * 2010-03-19 2014-11-26 株式会社東芝 Compound memory
TWI511236B (en) * 2010-05-14 2015-12-01 Semiconductor Energy Lab Semiconductor device
WO2011145468A1 (en) * 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
JP5671418B2 (en) * 2010-08-06 2015-02-18 株式会社半導体エネルギー研究所 Driving method of semiconductor device
US8339837B2 (en) * 2010-08-26 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
JP5827520B2 (en) * 2010-09-13 2015-12-02 株式会社半導体エネルギー研究所 Semiconductor memory device
US8854865B2 (en) 2010-11-24 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
JP5898527B2 (en) 2011-03-04 2016-04-06 株式会社半導体エネルギー研究所 Semiconductor device
JP5839474B2 (en) 2011-03-24 2016-01-06 株式会社半導体エネルギー研究所 Signal processing circuit
US8681533B2 (en) * 2011-04-28 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Memory circuit, signal processing circuit, and electronic device
TWI541978B (en) 2011-05-11 2016-07-11 半導體能源研究所股份有限公司 Semiconductor device and method for driving semiconductor device
TWI536502B (en) * 2011-05-13 2016-06-01 半導體能源研究所股份有限公司 Memory circuit and electronic device
JP5901927B2 (en) * 2011-10-06 2016-04-13 株式会社半導体エネルギー研究所 Semiconductor device
US9257422B2 (en) 2011-12-06 2016-02-09 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit and method for driving signal processing circuit
US8941113B2 (en) * 2012-03-30 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, semiconductor device, and manufacturing method of semiconductor element
US8860022B2 (en) * 2012-04-27 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
JP2014095897A (en) 2012-10-12 2014-05-22 Semiconductor Energy Lab Co Ltd Liquid crystal display device
US9245650B2 (en) 2013-03-15 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2014186777A (en) * 2013-03-22 2014-10-02 Toshiba Corp Semiconductor memory device
JP6322503B2 (en) 2013-07-16 2018-05-09 株式会社半導体エネルギー研究所 Semiconductor device
WO2015114476A1 (en) 2014-01-28 2015-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9653611B2 (en) 2014-03-07 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

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