JP6100076B2 - プロセッサ - Google Patents
プロセッサ Download PDFInfo
- Publication number
- JP6100076B2 JP6100076B2 JP2013096249A JP2013096249A JP6100076B2 JP 6100076 B2 JP6100076 B2 JP 6100076B2 JP 2013096249 A JP2013096249 A JP 2013096249A JP 2013096249 A JP2013096249 A JP 2013096249A JP 6100076 B2 JP6100076 B2 JP 6100076B2
- Authority
- JP
- Japan
- Prior art keywords
- switch
- potential power
- period
- transistor
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 239000004065 semiconductor Substances 0.000 claims description 194
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- 239000011368 organic material Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000006213 oxygenation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000004439 roughness measurement Methods 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000779 smoke Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
- G06F1/26—Power supply means, e.g. regulation thereof
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
- G06F1/26—Power supply means, e.g. regulation thereof
- G06F1/32—Means for saving power
- G06F1/3203—Power management, i.e. event-based initiation of a power-saving mode
- G06F1/3234—Power saving characterised by the action undertaken
- G06F1/3287—Power saving characterised by the action undertaken by switching off individual functional units in the computer system
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/50—Reducing energy consumption in communication networks in wire-line communication networks, e.g. low power modes or reduced link rate
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computing Systems (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Thin Film Transistor (AREA)
- Power Sources (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Logic Circuits (AREA)
- Dram (AREA)
Description
本実施の形態では、開示する発明の一態様に係るプロセッサの構成および動作について、図1乃至図4を用いて説明する。
本実施の形態においては、先の実施の形態に示すプロセッサの作製方法の一例について、図5乃至図9を用いて説明する。例として図2(B)に示す不揮発性記憶素子133のトランジスタ110およびトランジスタ112の作製方法について説明する。なお、図5乃至図8において、A−Bに示す断面図は、ワイドバンドギャップ半導体として酸化物半導体を有するトランジスタ110、n型のトランジスタ112が形成される領域の断面図に相当し、C−Dに示す断面図は、酸化物半導体膜を有するトランジスタ110のドレイン電極(またはソース電極)とn型のトランジスタ112のゲート電極とが接続されたノードM1における断面図に相当する。
上記実施の形態に示すプロセッサの少なくとも一部を利用してCPU(Central Processing Unit)を構成することができる。
本明細書に開示するプロセッサを有する半導体装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、テレビ、モニタ等の表示装置、照明装置、デスクトップ型或いはノート型のパーソナルコンピュータ、ワードプロセッサ、DVD(Digital Versatile Disc)などの記録媒体に記憶された静止画または動画を再生する画像再生装置、ポータブルCDプレーヤ、ラジオ、テープレコーダ、ヘッドホンステレオ、ステレオ、コードレス電話子機、トランシーバ、携帯無線機、携帯電話、自動車電話、携帯型ゲーム機、電卓、携帯情報端末、電子手帳、電子書籍、電子翻訳機、音声入力機器、ビデオカメラ、デジタルスチルカメラなどのカメラ、電気シェーバ、電子レンジ等の高周波加熱装置、電気炊飯器、電気洗濯機、電気掃除機、エアコンディショナーなどの空調設備、食器洗い器、食器乾燥器、衣類乾燥器、布団乾燥器、電気冷蔵庫、電気冷凍庫、電気冷凍冷蔵庫、DNA保存用冷凍庫、煙感知器、放射線測定器、透析装置等の医療機器、などが挙げられる。さらに、誘導灯、信号機、ベルトコンベア、エレベータ、エスカレータ、産業用ロボット、電力貯蔵システム等の産業機器も挙げられる。また、石油を用いたエンジンや、非水系二次電池からの電力を用いて電動機により推進する移動体なども、電気機器の範疇に含まれるものとする。上記移動体として、例えば、電気自動車(EV)、内燃機関と電動機を併せ持ったハイブリッド車(HEV)、プラグインハイブリッド車(PHEV)、これらのタイヤ車輪を無限軌道に変えた装軌車両、電動アシスト自転車を含む原動機付自転車、自動二輪車、電動車椅子、ゴルフ用カート、小型または大型船舶、潜水艦、ヘリコプター、航空機、ロケット、人工衛星、宇宙探査機や惑星探査機、宇宙船が挙げられる。これらの電子機器の具体例を図11に示す。
101 第1の回路ブロック
102 第2の回路ブロック
103 第3の回路ブロック
110 トランジスタ
111 容量素子
112 トランジスタ
113 トランジスタ
121 第1のスイッチ
122 第2のスイッチ
123 第3のスイッチ
124 第4のスイッチ
132 揮発性記憶素子
133 不揮発性記憶素子
141 合成容量
143 合成容量
201 半導体基板
203 素子分離領域
207 ゲート絶縁膜
209 ゲート電極
211a 不純物領域
211b 不純物領域
215 絶縁膜
217 絶縁膜
219a コンタクトプラグ
219b コンタクトプラグ
220 絶縁膜
221 絶縁膜
222 絶縁膜
223a 配線
223b 配線
224 電極
225 絶縁膜
227 酸化物半導体膜
229 酸化物半導体膜
231 絶縁膜
233 ゲート電極
235 酸化物半導体膜
235a 領域
235b 領域
235c 領域
237 サイドウォール絶縁膜
239 ゲート絶縁膜
241a 電極
241b 電極
243 絶縁膜
245 絶縁膜
249 配線
250 配線
1189 ROMインターフェース
1190 基板
1191 ALU
1191 演算回路
1192 ALUコントローラ
1193 インストラクションデコーダ
1194 インタラプトコントローラ
1195 タイミングコントローラ
1196 レジスタ
1197 レジスタコントローラ
1198 バスインターフェース
1199 ROM
3300 室内機
3301 筐体
3302 送風口
3303 CPU
3304 室外機
3310 電気冷凍冷蔵庫
3311 筐体
3312 冷蔵室用扉
3313 冷凍室用扉
3314 野菜室用扉
3315 CPU
3320 映像表示装置
3321 筐体
3322 表示部
3323 CPU
3330 電気自動車
3331 二次電池
3332 制御回路
3333 駆動装置
3334 処理装置
Claims (6)
- 第1の高電位電源線に接続されている第1の回路ブロックと、
少なくとも第1の記憶素子を含み、第2の高電位電源線に接続されている第2の回路ブロックと、
少なくとも第2の記憶素子を含み、第3の高電位電源線に接続されている第3の回路ブロックと、を有し、
前記第1の高電位電源線は、第4の高電位電源線と第1のスイッチおよび第2のスイッチを介して電気的に接続されており、
前記第2の高電位電源線は、前記第4の高電位電源線と前記第1のスイッチを介して電気的に接続されており、
前記第3の高電位電源線は、前記第4の高電位電源線と前記第1のスイッチおよび第3のスイッチを介して電気的に接続され、前記第1の高電位電源線と第4のスイッチを介して電気的に接続されており、
前記第1の回路ブロック乃至前記第3の回路ブロックは低電位電源線と電気的に接続されており、
通常の演算処理を行う演算処理期間と、
前記第1の記憶素子から前記第2の記憶素子にデータを退避させるデータ退避期間と、
前記第1の回路ブロック乃至前記第3の回路ブロックと前記第4の高電位電源線を非導通状態とする電源遮断期間と、
前記第2の記憶素子から前記第1の記憶素子にデータを復帰させるデータ復帰期間と、
前記演算処理期間と前記データ退避期間の間に設けられた、前記第1の回路ブロックから前記第3の回路ブロックに電荷を充電する第1の充電期間と、に分けて動作し、
前記演算処理期間は、少なくとも前記第1のスイッチおよび前記第2のスイッチが導通状態であり、
前記データ退避期間は、少なくとも前記第1のスイッチおよび前記第3のスイッチが導通状態であり、
前記電源遮断期間は、少なくとも前記第1のスイッチが非導通状態であり、
前記データ復帰期間は、少なくとも前記第1のスイッチおよび前記第3のスイッチが導通状態であり、
前記第1の充電期間は、少なくとも前記第1のスイッチおよび前記第4のスイッチが導通状態であり、且つ前記第2のスイッチおよび前記第3のスイッチが非導通状態である、プロセッサ。 - 請求項1に記載のプロセッサにおいて、さらに、前記データ復帰期間と当該データ復帰期間の次の演算処理期間の間に設けられた、前記第3の回路ブロックから前記第1の回路ブロックに電荷を充電する第2の充電期間と、を有し、
前記第2の充電期間は、少なくとも前記第1のスイッチおよび前記第4のスイッチが導通状態であり、且つ前記第2のスイッチおよび前記第3のスイッチが非導通状態である、プロセッサ。 - 前記第1の記憶素子は、レジスタである請求項1又は2に記載のプロセッサ。
- 前記第2の記憶素子は、酸化物半導体を有するトランジスタを含んで構成される請求項1乃至3のいずれか一に記載のプロセッサ。
- 前記第1のスイッチは、酸化物半導体を有するトランジスタを含んで構成される請求項1乃至4のいずれか一に記載のプロセッサ。
- 前記第2のスイッチ乃至前記第4のスイッチのいずれか一または複数が、酸化物半導体を有するトランジスタを含んで構成される請求項1乃至5のいずれか一に記載のプロセッサ。
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JP6396671B2 (ja) | 2013-04-26 | 2018-09-26 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6488124B2 (ja) * | 2013-12-27 | 2019-03-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
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JP2016015475A (ja) * | 2014-06-13 | 2016-01-28 | 株式会社半導体エネルギー研究所 | 半導体装置、及び電子機器 |
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TWI724231B (zh) * | 2016-09-09 | 2021-04-11 | 日商半導體能源硏究所股份有限公司 | 記憶體裝置及其工作方法、半導體裝置、電子構件以及電子裝置 |
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