JP7231353B2 - 改善されたゲルマニウムエッチングのシステム及び方法 - Google Patents
改善されたゲルマニウムエッチングのシステム及び方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 93
- 229910052732 germanium Inorganic materials 0.000 title claims description 72
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title claims description 72
- 238000005530 etching Methods 0.000 title claims description 37
- 239000000463 material Substances 0.000 claims description 141
- 238000012545 processing Methods 0.000 claims description 75
- 239000000758 substrate Substances 0.000 claims description 60
- 230000003197 catalytic effect Effects 0.000 claims description 45
- 229910052731 fluorine Inorganic materials 0.000 claims description 45
- 239000011737 fluorine Substances 0.000 claims description 45
- 239000002243 precursor Substances 0.000 claims description 37
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 33
- 150000002500 ions Chemical class 0.000 claims description 29
- 239000004065 semiconductor Substances 0.000 claims description 21
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 14
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 14
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 14
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 229910017052 cobalt Inorganic materials 0.000 claims description 8
- 239000010941 cobalt Substances 0.000 claims description 8
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 7
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 7
- 229910052804 chromium Inorganic materials 0.000 claims description 7
- 239000011651 chromium Substances 0.000 claims description 7
- 229910052741 iridium Inorganic materials 0.000 claims description 7
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052742 iron Inorganic materials 0.000 claims description 7
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 229910052758 niobium Inorganic materials 0.000 claims description 7
- 239000010955 niobium Substances 0.000 claims description 7
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 7
- 229910052762 osmium Inorganic materials 0.000 claims description 7
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims description 7
- 229910052763 palladium Inorganic materials 0.000 claims description 7
- 229910052697 platinum Inorganic materials 0.000 claims description 7
- 229910052702 rhenium Inorganic materials 0.000 claims description 7
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 7
- 229910052703 rhodium Inorganic materials 0.000 claims description 7
- 239000010948 rhodium Substances 0.000 claims description 7
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 7
- 229910052707 ruthenium Inorganic materials 0.000 claims description 7
- 229910052715 tantalum Inorganic materials 0.000 claims description 7
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 7
- 229910052720 vanadium Inorganic materials 0.000 claims description 7
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 7
- 125000001153 fluoro group Chemical group F* 0.000 claims description 5
- 239000003054 catalyst Substances 0.000 claims description 3
- 210000002381 plasma Anatomy 0.000 description 80
- 230000008569 process Effects 0.000 description 37
- 239000007789 gas Substances 0.000 description 33
- 238000005516 engineering process Methods 0.000 description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 239000012530 fluid Substances 0.000 description 12
- -1 fluorine radicals Chemical class 0.000 description 11
- 238000000151 deposition Methods 0.000 description 9
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 7
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 6
- 150000003254 radicals Chemical class 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000007935 neutral effect Effects 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000001723 curing Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000009969 flowable effect Effects 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000004941 influx Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000009919 sequestration Effects 0.000 description 1
- QTJXVIKNLHZIKL-UHFFFAOYSA-N sulfur difluoride Chemical compound FSF QTJXVIKNLHZIKL-UHFFFAOYSA-N 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- FQFKTKUFHWNTBN-UHFFFAOYSA-N trifluoro-$l^{3}-bromane Chemical compound FBr(F)F FQFKTKUFHWNTBN-UHFFFAOYSA-N 0.000 description 1
- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32422—Arrangement for selecting ions or species in the plasma
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- H01J37/32—Gas-filled discharge tubes
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- H01J37/32449—Gas control, e.g. control of the gas flow
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- H01J37/32—Gas-filled discharge tubes
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- H01J37/32458—Vessel
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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Description
Claims (13)
- ゲルマニウム含有材料をエッチングする方法であって、
半導体処理チャンバの遠隔プラズマ領域内でフッ素含有前駆体のプラズマを形成することと、
チャンバ構成要素において画定され、触媒材料でコーティングされた開孔を通して前記フッ素含有前駆体のプラズマ流出物を流動させることと、
前記触媒材料を用いて、前記プラズマ流出物内のフッ素ラジカルの濃度を減少させることと、
前記半導体処理チャンバの処理領域に前記プラズマ流出物を供給することであって、ゲルマニウム含有材料を含む基板が、前記処理領域内に収容される、前記プラズマ流出物を供給することと、
前記ゲルマニウム含有材料をエッチングすることと
を含み、前記チャンバ構成要素が、70℃以上の温度で維持される、方法。 - 前記触媒材料が、ニッケル、コバルト、バナジウム、ニオブ、タンタル、クロム、マンガン、レニウム、鉄、ルテニウム、オスミウム、パラジウム、プラチナ、ロジウム、及びイリジウムからなる群から選択された元素を含む1つ又は複数の材料を含む、請求項1に記載のゲルマニウム含有材料をエッチングする方法。
- 前記基板が、30℃以下の温度で維持される、請求項1に記載のゲルマニウム含有材料をエッチングする方法。
- 前記ゲルマニウム含有材料が、SiGeを含む、請求項1に記載のゲルマニウム含有材料をエッチングする方法。
- 前記ゲルマニウム含有材料が、第1のゲルマニウム含有材料であり、前記第1のゲルマニウム含有材料が、シリコン又は第2のゲルマニウム含有材料に対してエッチングされ、前記第2のゲルマニウム含有材料が、前記第1のゲルマニウム含有材料より低いゲルマニウム濃度によって特徴付けられる、請求項1に記載のゲルマニウム含有材料をエッチングする方法。
- ゲルマニウム含有材料をエッチングする方法であって、
半導体処理チャンバの遠隔プラズマ領域内でフッ素含有前駆体のプラズマを形成することと、
チャンバ構成要素において画定され、触媒材料でコーティングされた開孔を通して前記フッ素含有前駆体のプラズマ流出物を流動させることと、
前記触媒材料を用いて、前記プラズマ流出物内のフッ素ラジカルの濃度を減少させることと、
前記半導体処理チャンバの処理領域に前記プラズマ流出物を供給することであって、ゲルマニウム含有材料を含む基板が、前記処理領域内に収容される、前記プラズマ流出物を供給することと、
前記ゲルマニウム含有材料をエッチングすることと
を含み、前記半導体処理チャンバ内の圧力が、2Torr以上の圧力で維持される、方法。 - ゲルマニウム含有材料をエッチングする方法であって、
半導体処理チャンバの遠隔プラズマ領域内でフッ素含有前駆体のプラズマを形成することと、
触媒材料を含むチャンバ構成要素を通して前記フッ素含有前駆体のプラズマ流出物を流動させることと、
前記触媒材料によって、前記プラズマ流出物内のフッ素ラジカルの少なくとも一部を触媒反応で変換させることと、
前記半導体処理チャンバの処理領域に前記プラズマ流出物を供給することであって、ゲルマニウム含有材料を含む基板が、前記処理領域内に収容される、前記プラズマ流出物を供給することと、
前記ゲルマニウム含有材料をエッチングすることと
を含み、前記チャンバ構成要素が、70℃以上の温度で維持される、方法。 - 前記変換させることが、前記触媒材料上のフッ素ラジカルから少なくとも2つのフッ素原子を含む材料を形成することを含む、請求項7に記載のゲルマニウム含有材料をエッチングする方法。
- 前記チャンバ構成要素が、遠隔プラズマユニット供給チューブ、ブロッカプレート、フェースプレート、イオンサプレッサ、又はシャワーヘッドのうちの1つ又は複数を含む、請求項7に記載のゲルマニウム含有材料をエッチングする方法。
- 前記触媒材料が、ニッケル、コバルト、バナジウム、ニオブ、タンタル、クロム、マンガン、レニウム、鉄、ルテニウム、オスミウム、パラジウム、プラチナ、ロジウム、及びイリジウムからなる群から選択された元素を含む1つ又は複数の材料を含む、請求項7に記載のゲルマニウム含有材料をエッチングする方法。
- 前記基板が、30℃以下の温度で維持される、請求項7に記載のゲルマニウム含有材料をエッチングする方法。
- ゲルマニウム含有材料をエッチングする方法であって、
半導体処理チャンバの遠隔プラズマ領域内でフッ素含有前駆体のプラズマを形成することと、
チャンバ構成要素において画定され、触媒材料でコーティングされた開孔を通して前記フッ素含有前駆体のプラズマ流出物を流動させることであって、前記チャンバ構成要素が、70℃と150℃との間の温度で維持される、前記フッ素含有前駆体のプラズマ流出物を流動させることと、
前記触媒材料を用いて、前記プラズマ流出物内のフッ素ラジカルの濃度を減少させることと、
前記半導体処理チャンバの処理領域に前記プラズマ流出物を供給することであって、ゲルマニウム含有材料を含む基板が、前記処理領域内に収容され、前記基板が、30℃以下の温度で維持される、前記プラズマ流出物を供給することと、
前記ゲルマニウム含有材料をエッチングすることと
を含む方法。 - 前記触媒材料が、ニッケル、コバルト、バナジウム、ニオブ、タンタル、クロム、マンガン、レニウム、鉄、ルテニウム、オスミウム、パラジウム、プラチナ、ロジウム、及びイリジウムからなる群から選択された元素を含む1つ又は複数の材料を含む、請求項12に記載のゲルマニウム含有材料をエッチングする方法。
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Also Published As
Publication number | Publication date |
---|---|
US20190043727A1 (en) | 2019-02-07 |
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US10043674B1 (en) | 2018-08-07 |
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