JP2008305871A - 半導体装置およびその製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- 239000011856 silicon-based particle Substances 0.000 claims abstract description 74
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 239000010408 film Substances 0.000 claims description 327
- 239000002245 particle Substances 0.000 claims description 60
- 238000000034 method Methods 0.000 claims description 40
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 28
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 28
- 230000008033 biological extinction Effects 0.000 claims description 20
- 239000010409 thin film Substances 0.000 claims description 17
- 238000003860 storage Methods 0.000 claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- 239000002994 raw material Substances 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 7
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- 230000004931 aggregating effect Effects 0.000 claims description 2
- 239000005380 borophosphosilicate glass Substances 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
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- 238000009825 accumulation Methods 0.000 abstract 1
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- 229910052751 metal Inorganic materials 0.000 description 27
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 238000002834 transmittance Methods 0.000 description 11
- 150000002739 metals Chemical class 0.000 description 10
- 230000000149 penetrating effect Effects 0.000 description 9
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 7
- 229910000077 silane Inorganic materials 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- 238000004151 rapid thermal annealing Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910018557 Si O Inorganic materials 0.000 description 2
- 229910007991 Si-N Chemical group 0.000 description 2
- 229910006294 Si—N Chemical group 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- LPQOADBMXVRBNX-UHFFFAOYSA-N ac1ldcw0 Chemical compound Cl.C1CN(C)CCN1C1=C(F)C=C2C(=O)C(C(O)=O)=CN3CCSC1=C32 LPQOADBMXVRBNX-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- -1 arsenic ions Chemical class 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76832—Multiple layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
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Abstract
【解決手段】本発明は、半導体基板10上に設けられたシリコン粒子36を含む第1絶縁膜40と、半導体基板10と第1絶縁膜40との間に設けられた電荷蓄積層14を含むONO膜からなる第2絶縁膜34と、第2絶縁膜34と第1絶縁膜40との間に設けられたゲート電極20と、ゲート電極20を挟むように半導体基板10内に設けられたビットライン22と、を具備する半導体装置およびその製造方法である。
【選択図】図3
Description
12 トンネル酸化膜
14 電荷蓄積層
16 トップ酸化膜
18 ONO膜
20 ゲート電極
22 ビットライン
24 サイドウォール層
26 下層絶縁膜
28 紫外線吸収層
30 上層絶縁膜
32 プラグ金属
34 第2絶縁膜
36 シリコン粒子
40 第1絶縁膜
42 シリコン薄膜
Claims (20)
- 半導体基板と、
前記半導体基板上に設けられた、粒子を含む第1絶縁膜と、を具備し、
前記粒子の紫外線に対する消衰係数は、前記第1絶縁膜の紫外線に対する消衰係数より高いことを特徴とする半導体装置。 - 前記粒子はシリコン粒子であることを特徴とする請求項1記載の半導体装置。
- 前記粒子は前記第1絶縁膜の幅方向に散在していることを特徴とする請求項1または2記載の半導体装置。
- 前記粒子は前記第1絶縁膜の厚み方向に散在していることを特徴とする請求項1から3のいずれか一項記載の半導体装置。
- 複数の前記粒子を含む第1絶縁膜が積層されていることを特徴とする請求項1から4のいずれか一項記載の半導体装置。
- 前記半導体基板上に設けられた第2絶縁膜を具備し、
前記第2絶縁膜は前記半導体基板と前記第1絶縁膜との間に設けられていることを特徴とする請求項1から5のいずれか一項記載の半導体装置。 - 前記第2絶縁膜は酸化シリコンおよび窒化シリコンの少なくとも一方を含むことを特徴とする請求項6記載の半導体装置。
- 前記第2絶縁膜は電荷蓄積層を含むONO膜であることを特徴とする請求項6または7記載の半導体装置。
- 前記半導体基板と前記第1絶縁膜との間に設けられた電荷蓄積層を含むONO膜と、
前記ONO膜と前記第1絶縁膜との間に設けられたゲート電極と、
前記ゲート電極を挟むように前記半導体基板内に設けられたビットラインと、を具備することを特徴とする請求項2記載の半導体装置。 - 前記半導体基板と前記第1絶縁膜との間に設けられた酸化シリコン膜と、
前記酸化シリコン膜と前記第1絶縁膜との間に設けられたゲート電極と、
前記ゲート電極を挟むように前記半導体基板内に設けられたソース領域およびドレイン領域と、を具備することを特徴とする請求項2記載の半導体装置。 - 半導体基板上に第1絶縁膜の紫外線に対する消衰係数より高い消衰係数である粒子を形成する工程と、
前記粒子を覆うように前記半導体基板上に前記第1絶縁膜を形成する工程と、を有することを特徴とする半導体装置の製造方法。 - 前記粒子はシリコン粒子であることを特徴とする請求項11記載の半導体装置。
- 前記粒子を形成する工程は、前記粒子の原料を含むガス雰囲気中で瞬間的にプラズマを生成して前記ガスを反応させることにより、前記粒子を形成する工程であることを特徴とする請求項11または12記載の半導体装置の製造方法。
- 前記粒子を形成する工程は、プラズマCVD装置を用いることを特徴とする請求項13記載の半導体装置の製造方法。
- 前記粒子を形成する工程は、前記粒子と同じ原料の薄膜を前記基板上に形成した後、前記薄膜に瞬間的に熱を加えて凝集させることにより、前記粒子を形成する工程であることを特徴とする請求項11または12記載の半導体装置の製造方法。
- 前記粒子を形成する工程は、RTA法もしくはレーザーアニール法を用いることを特徴とする請求項15記載の半導体装置の製造方法。
- 前記粒子を形成する工程と、前記第1絶縁膜を形成する工程と、を繰り返し行うことで、前記粒子を含む前記第1絶縁膜を積層させることを特徴とする請求項11から16のいずれか一項記載の半導体装置の製造方法。
- 積層した前記粒子を含む第1絶縁膜それぞれを溶融させることで、積層した前記粒子を含む第1絶縁膜を1層の前記粒子を含む第1絶縁膜とすることを特徴とする請求項17記載の半導体装置の製造方法。
- 前記第1絶縁膜はBPSG膜であることを特徴とする請求項11から18のいずれか一項記載の半導体装置の製造方法。
- 前記第1絶縁膜を形成する工程の後、紫外線を発生させる工程を有することを特徴とする請求項11から19のいずれか一項記載の半導体装置の製造方法。
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JP2007149794A JP2008305871A (ja) | 2007-06-05 | 2007-06-05 | 半導体装置およびその製造方法 |
US12/133,689 US9281384B2 (en) | 2007-06-05 | 2008-06-05 | Ultraviolet blocking structure and method for semiconductor device |
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