KR20110086540A - 불소화합물을 이용한 필름의 선택적인 식각 방법 - Google Patents
불소화합물을 이용한 필름의 선택적인 식각 방법 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000005530 etching Methods 0.000 title claims abstract description 25
- 150000002222 fluorine compounds Chemical class 0.000 title claims abstract description 13
- 239000007789 gas Substances 0.000 claims abstract description 35
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000001301 oxygen Substances 0.000 claims abstract description 7
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 7
- 150000004767 nitrides Chemical class 0.000 claims abstract description 5
- 239000012298 atmosphere Substances 0.000 claims description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 150000003737 xenon compounds Chemical class 0.000 claims description 3
- 238000005202 decontamination Methods 0.000 claims 1
- 230000003588 decontaminative effect Effects 0.000 claims 1
- 238000011109 contamination Methods 0.000 abstract description 6
- 239000012528 membrane Substances 0.000 abstract description 5
- 238000002161 passivation Methods 0.000 abstract description 5
- 238000000137 annealing Methods 0.000 abstract description 4
- 239000011261 inert gas Substances 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 239000000356 contaminant Substances 0.000 abstract description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 abstract 1
- 238000005260 corrosion Methods 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- IGELFKKMDLGCJO-UHFFFAOYSA-N xenon difluoride Chemical compound F[Xe]F IGELFKKMDLGCJO-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- RPSSQXXJRBEGEE-UHFFFAOYSA-N xenon tetrafluoride Chemical compound F[Xe](F)(F)F RPSSQXXJRBEGEE-UHFFFAOYSA-N 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
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Abstract
본 발명은 리닝 프리(Leaning Free)의 식각을 위해 일반적인 진공 공정조건 하에서 플로린 화합물을 사용하며, 막질 간의 선택비를 조절하기 위해 NH3 Gas를 선택적으로 사용하며, 불활성 Gas를 첨가하여 식각량을 보다 정밀하게 제어 할수 있도록 한다. 또한, 보다높은 식각량을 요구하는 공정의 경우 식각량을 높이기 위해 기존의 고밀도 프라즈마가 아닌 강도가 조절이 가능한 원거리 프라즈마를 채용 하는 것을 특징으로 하며, 공정이 완료된 후 잔류하는 플로린 혹은 다른 물질들로 인한 추가적인 반응이나 오염을 방지하기 위해 산소 혹은 질소분위기의 리모트 프라즈마 환경에서 2차적인 어닐(Annel)과 페시베이션 (Passivation)을 실시 하는 것을 특징으로 한다.
Description
본 발명은 반도체 소자 제조 공정에 사용되는 실리콘 웨이퍼 (Silicon Wafer)의 표면에 형성된 산화 막, 질화막 혹인 이들의 혼합물로 이루어진 막질을 선택적으로 식각하기 위한 방법에 관한 기술 중에서, 기존의 습식세정이나 고밀도 프라즈마 아닌 제3의 식각 방식으로 소자에 부작용이 없는 (Damage free) 필름 식각 방식에 관한 것이다. 기존의 고밀도 플라스마( High Density Plasma)를 사용한 식각 방식의 경우 사용하는 가스의 조합으로 원하는 선택비를 가질 수 있어 서로 다른 필름을 선택적으로 식각 하는데 주로 사용 되고 있으나 웨이퍼 원판의 표면에 가해지는 프라즈마 어텍 (Plasma Attack)으로 인한 소자의 신뢰성의 문제로 인해 습식 세정 방식으로 이러한 필름들을 제거해 왔다. 하지만 소자의 고집적화로 인해 디자인룰이 축소되면서 발생하는 리닝(Leaning: 특정 이상의 종횡비를 가지는 필름들이 건조가 되면서 서로 붙는 현상) 현상으로 인해 문제가 발생 되고 있다. 또한 습식 세정의 경우 유사한 필름의 경우에도 선택비의 차이가 크기 때문에 선택비의 조절이 용이하고, 데미지가 없는 식각 기술의 개발이 요구되고 있다. 본 발명은 이러한 문제점을 방지할 수 있는 기술에 관한 것이다.
반도체 제조 공정은 현재 20 나노급의 미세한 디자인 환경에서 공정을 진행하고 있으며, 이러한 선 폭을 구현하기 위해 세정 및 식각 기술의 변화가 필요한 시점이다. 알려진 바와 같이 습식 세정의 경우 리닝 이라는 복병과 막질 간 너무 높은 선택비로 인해 특정 부분의 식 각에 어려움을 격 고 있다, 이러한 문제를 해결하는 방식으로는 쉽게 기존의 건식 식 각을 사용하는 방법을 생각해 볼 수 있겠으나, 건식 식 각의 경우 고밀도 프라즈마의 사용으로 인한 소자의 신뢰성에 관한 문제로 인해 특정 부분, 특히 게이트 레벨에서의 사용을 금기 시 하고 있어 새로운 형태의 식각 방식이 요구되고 있다. 또한 선폭의 축소로 사용되는 절연막(IMD) 또한 물성이 다른 다양한 형태의 조합으로 사용하고 있어 리닝프리 (Leaning Free), 데미지프리(Damage Free)의 산화막, 질화막 혹인 이들의 조합물로 구성된 필름층을 낮은 선택비로 효과적으로 제거하는 공정의 개발이 요구되고 있으며, 이러한 기술로는 NF3와 NH3 Gas를 조합한 형태의 기상 식각 방식과, HF와 NH3 Gas를 조합한 기상 식각 방식이 도입되어 사용되고 있으나, 이들 모두 외국에서 특허권을 소유하고 있어 국내에서 사용 가능한 기술의 개발 및 발명이 절실히 요구되고 있다.
본 발명은 종래 문제점을 해결하기 위한 것으로, 웨이퍼 표면 (Wafer surface) 에 데미지가 없고 (Damage Free) , 리닝의 문제가 없으며 (Leaning Free), 막질간 선택비가 낮은 효과적인 방법을 제공하는 것이다.
상기 목적을 달성하기 위해 본 발명은 리닝 프리(Leaning Free)의 식각을 위해 일반적인 진공 공정 조건 에서 플로린 화합물을 사용하며, 막질 간의 선택비를 조절하기 위해 NH3 Gas를 선택적으로 사용하며, 불활성 Gas를 첨가하여 식각량을 보다 정밀하게 제어 할수 있도록 한다. 또한, 보다 높은 식각량을 요구하는 공정의 경우 식각량을 높이기 위해 기존의 고밀도 프라즈마가 아닌 강도가 조절이 가능한 원거리 프라즈마를 채용하는것을 특징으로하며, 공정이 완료된후 잔류하는 플로린 혹은 다른 물질들로 인한 추가적인 반응이나 오염을 방지 하기 위해 산소 혹은 질소분위기의 리모트 프라즈마 환경에서 어닐(Annel)과 페시베이션 (Passivation)을 실시 하는 것을 특징으로 한다.
본 발명에 따른 방법으로 공정을 진행함으로써 기존의 문제점을 해결하고 또한 기존의 외국의 장비보다 효과적이고 경제적인 장비를 개발할 수 있는 토대를 마련해 줄 수 있다.
도 1. 진공챔버의 구성
본 발명의 특징 및 이점들은 다음의 상세한 설명으로 더욱 명백해질 것이다. 이에 앞서, 본 명세서 및 청구범위에 사용된 용어나 단어는 발명자가 그 자신의 발명을 가장 최선의 방법으로 설명하기 위해 용어의 개념을 적절하게 정의할 수 있다는 원칙에 입각하여 본 발명의 기술적 사상에 부합하는 의미와 개념으로 해석되어야만 한다.
본 명이 수행되기 위한 구성을 보면, 일반적인 클러스터 형태의 운송 시스템과 진공 챔버가 구성된다. 구성의 경우 너무나 일반적인 진공 장비의 형태를, 특히 보편적으로 사용하고 있는 다중 챔버 방식 매엽식 CVD장비의 구성과 동일 하기 때문에 별도의 도면으로 표시하지 아니하였다. 이러한 형상들은 에플라이드 머트리얼저가 대한민국에 등록한 특허 등록번호 100931765에 상세히 나와 있다.
진공 챔버에는 일반적으로 0.1 ~ 400 Torr의 범위를 가지도록 압력이 제어되며, 상단의 가스 분배기를 통해 가스가 주입될 수 있는 통로와 가스가 고르게 분대 될 수 있도록 샤워 헤드를 거치 비로소 식각을 하고자 하는 목적물에 전달 되는 구조를 한다.
챔버 내부에는 부식성이 강한 가스로 인한 오염을 최소 하게 할 수 있도록 불활성 가스를 사용하여 오염이 될 부분을 퍼지 하며 여기에 사용되는 불활성 가스로는 Ar혹은 He이 바람직하다. 또한 오염을 최소화하기 위해 보편적인 사용 방식으로 챔버의 벽면의 온도를 올려준다. 챔버의 온도는 일반적인 장비의 온도인 60±20℃로 하고, 웨이퍼가 올려 지는 부분의 온도는 선택비를 조절하는 역활을 하는 NH3와 플로린의 혼합물인 (NH4)2SiF4가 형성될 수 있는 조건의 온도인 30±20℃로 조절된다.
플로린 화합물의 예로 불화 크세논(XeFx)을 사용할 수 있으며, 이미 상용화되어 있는 가스들의 조합으로 사용할 수 있다. 가스의 조합이란 둘 이상의 가스를 동시에 혹은 교번하여 주입함으로써 챔버내에 혼합 가스 분위기를 만드는 것으로 여기에 사용되는 플로린 화합물을 조성할 수 있는 가스의 예를 들면 XeF2, XeF4등의 크세논화합물, NF3,HF,F2 등을 들 수 있으며, 상기의 챔버 분위기에서 플로린 화합물과 NH3 가스를 챔버 내에 주입시켜서 식각을 진행하게 된다.
원하는 만큼의 식각이 이루어 지면 (NH4)2SiF4를 승화 시켜서 일련의 식각공정을 마치게 된다.
이러한 과정에서 막질을 제거함과 동시에 이에 상응하는 NH3와 플로린의 혼합물인 (NH4)2SiF4이 형성되어 에칭 스탑(Etching Stop: 화합물의 누적으로 인해 더 이상의 식 각이 진행되지 않는 현상)이 발생 될 수 있는데, 이때도 화합물이 승화하는 온도인 200±20℃의 온도를 웨이퍼 표면에 가하여 화합물을 승화시킨 후 다시 가스의 주입을 통해 식 각을 진행할 수 있으며, 이러한 식각과 승화를 반복하여 대상물을 원하는 만큼 식각을 하게 된다.
하지만 이러한 공정이 완료된 후에도 잔존하는 가스나 오염물로 인해 웨이퍼 표면의 반응이 지속하는 현상이 나날 날수 있다.이러한 현상을 방지하기 위해 리모트 프라즈마를 사용하는 산소 분위기 내에서 2차적인 어닐(annel)과 산소 페시베이션(Passivation : 격자 무늬의 Si의 빈 자리에 O 나 O2를 종단시켜 SiO2를 만들어 더이상의 오염으로부터 보호하는 것 )을 시키거나, 수소 분위기의 리모트 프라즈마를 사용하여 수소 페시베이션을 하는 과정을 거쳐 과정을 본 발명을 완성하게 된다. 2차적인 어닐과 페시베이션에 사용되는 웨이퍼의 온도는 20~300℃ 이내로 하며 바람직하게는 200±20℃로 한다.
해당사항 없음.
Claims (8)
- 진공의 분위기에서 질화막이나 산화막혹은 이들의 조합물로 구성된 막질을 선택적으로 제거하는 공정에서 막질을 제거하는 가스로 NH3 가스 이외에도 적어도 한가지 이상의 불소 화합물 가스를 사용하여 막질을 선택적으로 제거하는 방법.
- 제 1 항에 있어서, NH3와 사용되는 불소 화합물로 하나의 가스를 사용할 경우 그 하나의 가스로 크세논 화합물 (XeFx) 혹은 F2 가스를 사용하는 것을 특징으로 하는 선택적인 막질 제거 방법.
- 제 1항에 있어서, NH3와 사용되는 불소 화합물로 하나 이상을 사용할 경우 대상이 되는 가스로 XeFx, F2, NF3, HF의 조합을 사용하는 것을 특징으로 하는 선택적인 막질 제거 방법.
- 제 1항에 있어서 식각 공정이 완료 후 2차적인 처리를 함에 있어서 산소 혹은 수소 분위기의 리모트 프라즈마를 사용하는 것을 특징으로 하는 선택적인 막질 제거 방법.
- 진공의 분위기에서 질화막이나 산화막혹은 이들의 조합물로 구성된 막질을 선택적으로 제거하는 공정에서 막질을 제거하는 가스로 NH3 가스 이외에도 적어도 한가지 이상의 불소 화합물 가스를 사용하며 이들 가스를 활성화하는 방법으로 전력의 세기가 조절 가능한 리모트 프라즈마를 사용하는 선택적인 막질 제거하는 방법.
- 제 5 항에 있어서, NH3와 사용되는 불소 화합물로 하나의 가스를 사용할 경우 그 하나의 가스로 크세논 화합물 (XeFx) 혹은 F2 가스를 사용하는 것을 특징으로 하는 선택적인 막질 제거 방법.
- 제 5 항에 있어서, NH3와 사용되는 불소 화합물로 하나 이상을 사용할 경우 대상이 되는 가스로 XeFx, F2, NF3, HF의 조합을 사용하는 것을 특징으로 하는 선택적인 막질 제거 방법.
- 제 5 항에 있어서, 식각 공정이 완료 후 2차적인 처리를 함에 있어서 산소 혹은 수소 분위기의 리모트 프라즈마를 사용하는 것을 특징으로 하는 선택적인 막질 제거 방법.
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