JP2015521387A - 適応的電荷平衡エッジ終端 - Google Patents
適応的電荷平衡エッジ終端 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims abstract description 81
- 239000002019 doping agent Substances 0.000 claims abstract description 55
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- 229910052751 metal Inorganic materials 0.000 claims description 50
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- 238000000034 method Methods 0.000 claims description 45
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- 150000004706 metal oxides Chemical class 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 54
- 230000015556 catabolic process Effects 0.000 description 22
- 230000008569 process Effects 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
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- 229910052796 boron Inorganic materials 0.000 description 8
- 230000007423 decrease Effects 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
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- 238000002161 passivation Methods 0.000 description 3
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- 238000013500 data storage Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
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Abstract
Description
概念1.第1型ドーパントを含む基板と、
前記基板の上方に配置され、前記基板よりも低濃度の前記第1型ドーパントを含むエピタキシャル層と、
前記エピタキシャル層内に配置され、第2型ドーパントを含む接合拡張領域と、
前記接合拡張領域と物理的に接触し、前記接合拡張領域よりも高濃度の前記第2型ドーパントを含む一組のフィールドリングと、
前記一組のフィールドリングと物理的に接触したエッジ終端構造と、
を備えた半導体デバイス。
概念2.前記エッジ終端構造が、一組の金属フィールドプレートを含む、概念1に記載の半導体デバイス。
概念3.前記エッジ終端構造が、一組のポリシリコンフィールドプレートを含む、概念1に記載の半導体デバイス。
概念4.前記接合拡張領域が、前記第2型ドーパントの横方向に変化するドーピングを含む、概念1に記載の半導体デバイス。
概念5.前記一組のフィールドリングのうちの1つが、前記一組の金属フィールドプレートのうちの1つに結合された、概念2に記載の半導体デバイス。
概念6.前記エッジ終端構造が、金属・ポリシリコンフィールドプレートを含む、概念1に記載の半導体デバイス。
概念7.前記一組の金属フィールドプレートが、前記一組の金属フィールドプレートそれぞれの間に隙間を形成した、概念2に記載の半導体デバイス。
概念8.第1型ドーパントを含む基板と、
前記基板の上方に配置され、前記基板よりも低濃度の前記第1型ドーパントを含むエピタキシャル層と、
前記エピタキシャル層内に配置され、第2型ドーパントを含む接合拡張領域と、
前記接合拡張領域と物理的に接触し、前記接合拡張領域よりも高濃度の前記第2型ドーパントを含む一組のフィールドリングと、
前記一組のフィールドリングと物理的に接触したエッジ終端構造と、
を備えた金属酸化物半導体電界効果トランジスタ(MOSFET)デバイス。
概念9.前記エッジ終端構造が、一組の金属フィールドプレートを含む、概念8に記載のMOSFETデバイス。
概念10.前記エッジ終端構造が、一組のポリシリコンフィールドプレートを含む、概念8に記載のMOSFETデバイス。
概念11.前記接合拡張領域が、前記第2型ドーパントの横方向に変化するドーピングを含む、概念8に記載のMOSFETデバイス。
概念12.前記一組のフィールドリングのうちの1つが、前記一組の金属フィールドプレートのうちの1つに結合された、概念9に記載のMOSFETデバイス。
概念13.前記エッジ終端構造が、金属・ポリシリコンフィールドプレートを含む、概念8に記載のMOSFETデバイス。
概念14.前記一組の金属フィールドプレートが、前記一組の金属フィールドプレートそれぞれの間に隙間を形成した、概念9に記載のMOSFETデバイス。
概念15.半導体デバイスのエピタキシャル層の上面内に接合拡張領域を生成するステップであって、前記エピタキシャル層が第1型ドーパントを含み、前記接合拡張領域が第2型ドーパントを含む、ステップと、
前記接合拡張領域と物理的に接触し、前記接合拡張領域よりも高濃度の前記第2型ドーパントを含む一組のフィールドリングを生成するステップと、
前記一組のフィールドリングと物理的に接触したエッジ終端構造を生成するステップと、
を含む方法。
概念16.前記エッジ終端構造が、一組の金属フィールドプレートを含む、概念15に記載の方法。
概念17.前記エッジ終端構造が、一組のポリシリコンフィールドプレートを含む、概念15に記載の方法。
概念18.前記接合拡張領域が、前記第2型ドーパントの横方向に変化するドーピングを含む、概念15に記載の方法。
概念19.前記一組のフィールドリングのうちの1つが、前記一組の金属フィールドプレートのうちの1つに結合された、概念16に記載の方法。
概念20.前記エッジ終端構造が、金属・ポリシリコンフィールドプレートを含む、概念15に記載の方法。
Claims (20)
- 第1型ドーパントを含む基板と、
前記基板の上方に配置され、前記基板よりも低濃度の前記第1型ドーパントを含むエピタキシャル層と、
前記エピタキシャル層内に配置され、第2型ドーパントを含む接合拡張領域と、
前記接合拡張領域と物理的に接触し、前記接合拡張領域よりも高濃度の前記第2型ドーパントを含む一組のフィールドリングと、
前記一組のフィールドリングと物理的に接触したエッジ終端構造と、
を備えた半導体デバイス。 - 前記エッジ終端構造が、一組の金属フィールドプレートを含む、請求項1に記載の半導体デバイス。
- 前記エッジ終端構造が、一組のポリシリコンフィールドプレートを含む、請求項1に記載の半導体デバイス。
- 前記接合拡張領域が、前記第2型ドーパントの横方向に変化するドーピングを含む、請求項1に記載の半導体デバイス。
- 前記一組のフィールドリングのうちの1つが、前記一組の金属フィールドプレートのうちの1つに結合された、請求項2に記載の半導体デバイス。
- 前記エッジ終端構造が、金属・ポリシリコンフィールドプレートを含む、請求項1に記載の半導体デバイス。
- 前記一組の金属フィールドプレートが、前記一組の金属フィールドプレートそれぞれの間に隙間を形成した、請求項2に記載の半導体デバイス。
- 第1型ドーパントを含む基板と、
前記基板の上方に配置され、前記基板よりも低濃度の前記第1型ドーパントを含むエピタキシャル層と、
前記エピタキシャル層内に配置され、第2型ドーパントを含む接合拡張領域と、
前記接合拡張領域と物理的に接触し、前記接合拡張領域よりも高濃度の前記第2型ドーパントを含む一組のフィールドリングと、
前記一組のフィールドリングと物理的に接触したエッジ終端構造と、
を備えた金属酸化物半導体電界効果トランジスタ(MOSFET)デバイス。 - 前記エッジ終端構造が、一組の金属フィールドプレートを含む、請求項8に記載のMOSFETデバイス。
- 前記エッジ終端構造が、一組のポリシリコンフィールドプレートを含む、請求項8に記載のMOSFETデバイス。
- 前記接合拡張領域が、前記第2型ドーパントの横方向に変化するドーピングを含む、請求項8に記載のMOSFETデバイス。
- 前記一組のフィールドリングのうちの1つが、前記一組の金属フィールドプレートのうちの1つに結合された、請求項9に記載のMOSFETデバイス。
- 前記エッジ終端構造が、金属・ポリシリコンフィールドプレートを含む、請求項8に記載のMOSFETデバイス。
- 前記一組の金属フィールドプレートが、前記一組の金属フィールドプレートそれぞれの間に隙間を形成した、請求項9に記載のMOSFETデバイス。
- 半導体デバイスのエピタキシャル層の上面内に接合拡張領域を生成するステップであって、前記エピタキシャル層が第1型ドーパントを含み、前記接合拡張領域が第2型ドーパントを含む、ステップと、
前記接合拡張領域と物理的に接触し、前記接合拡張領域よりも高濃度の前記第2型ドーパントを含む一組のフィールドリングを生成するステップと、
前記一組のフィールドリングと物理的に接触したエッジ終端構造を生成するステップと、
を含む方法。 - 前記エッジ終端構造が、一組の金属フィールドプレートを含む、請求項15に記載の方法。
- 前記エッジ終端構造が、一組のポリシリコンフィールドプレートを含む、請求項15に記載の方法。
- 前記接合拡張領域が、前記第2型ドーパントの横方向に変化するドーピングを含む、請求項15に記載の方法。
- 前記一組のフィールドリングのうちの1つが、前記一組の金属フィールドプレートのうちの1つに結合された、請求項16に記載の方法。
- 前記エッジ終端構造が、金属・ポリシリコンフィールドプレートを含む、請求項15に記載の方法。
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US20130320462A1 (en) | 2013-12-05 |
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US9842911B2 (en) | 2017-12-12 |
US20180114852A1 (en) | 2018-04-26 |
KR101710249B1 (ko) | 2017-03-08 |
DE112013002722B4 (de) | 2018-10-25 |
WO2013181467A1 (en) | 2013-12-05 |
US10229988B2 (en) | 2019-03-12 |
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