KR910001975A - 반도체장치 및 그 번인방법 - Google Patents
반도체장치 및 그 번인방법 Download PDFInfo
- Publication number
- KR910001975A KR910001975A KR1019900009729A KR900009729A KR910001975A KR 910001975 A KR910001975 A KR 910001975A KR 1019900009729 A KR1019900009729 A KR 1019900009729A KR 900009729 A KR900009729 A KR 900009729A KR 910001975 A KR910001975 A KR 910001975A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor device
- wirings
- wiring
- chip
- chip regions
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 17
- 238000000034 method Methods 0.000 title claims 3
- 239000010410 layer Substances 0.000 claims 2
- 239000002356 single layer Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 5
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
- G01R31/2856—Internal circuit aspects, e.g. built-in test features; Test chips; Measuring material aspects, e.g. electro migration [EM]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
- G01R31/2831—Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
- G01R31/286—External aspects, e.g. related to chambers, contacting devices or handlers
- G01R31/2863—Contacting devices, e.g. sockets, burn-in boards or mounting fixtures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Environmental & Geological Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Geometry (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Tests Of Electronic Circuits (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 반도체장치의 1실시예를 개략적으로 나타낸 구성설명도.
제2도는 제1도중의 일부를 추출해서 공통배선과 각 칩영역과의 접속예를 나타낸 회로도.
제3도는 본 발명의 반도체장치의 다른 실시예를 개략적으로 나타낸 구성설명도.
제4도는 제1도 또는 제3도중의 1개의 다이나믹 RAM의 칩 영역에 있어서 일부의 회로를 추출해서 공통배선과의 접속예를 나타낸 회로도.
Claims (12)
- 복수개의 집접회로의 칩영역(11)을 갖춘 웨이퍼상태의 반도체장치(10)에 있어서, 상기 복수개의 칩영역(11)에 공통으로 접속된 배선(12,13)이 형성되어 있는 것을 특징으로 하는 반도체장치.
- 제1항에 있어서, 상기 배선(12,13)이 집적회로의 칩영역(11)의 회로를 구동하기 위한 전원선 및 집적회로의 칩영역(11)의 동작을 제어하기 위한 신호선인 것을 특징으로 하는 반도체장치.
- 제1항에 있어서, 상기 배선(12,13)에 웨이퍼의 외부에서 전원전압 및 신호를 인가하기 위한 접촉영역(12″, 13″)이 형성되어 있는 것을 특징으로 하는 반도체장치.
- 제1항에 있어서, 상기 복수개의 집적회로의 칩영역(11)이 개개로 분할되어 집적회로로서 조립되는 것을 특징으로 하는 반도체장치.
- 제1항에 있어서, 상기 배선(12,13)이 단층 또는 다층의 배선으로 이루어진 것을 특징으로 하는 반도체장치.
- 제1항 내지 제5항중의 어느 한 항에 있어서, 상기 배선(12,13)의 전부 또는 일부가 각 칩영역911)의 내부에서 사용되고 있는 배선과 동일한 배선층에 의해 웨이퍼의 절단선상에 형성되어 있는 것을 특징으로 하는 반도체장치.
- 제6항에 있어서, 상기 배선(12,13)과 각 칩영역(11)의 내부에서 사용되고 있는 배선간의 접속이 칩영역(11)을 다이로 잘라내기 전에 절단되는 것을 특징으로 하는 반도체장치.
- 제1항 내지 제5항중의 어느 한 항에 있어서, 상기 배선(12,13)의 전부 또는 일부가 별도로 새롭게 부가한 배선층에 의해 형성되어 있는 것을 특징으로 하는 반도체장치.
- 제8항에 있어서, 상기 배선(12,13)이 칩영역(11)을 다이로 잘라내기 전에 제거되는 것을 특징으로 하는 반도체장치.
- 제1항 내지 제5항중의 어느 한 항에 있어서, 사기 배선(12,13)과 각 칩영역(11)의 내부에서 사용되고 있는 배선간에 저항소자(r)가 삽입되어 있는 것을 특징으로 하는 반도체장치.
- 제10항에 있어서, 상기 저항소자(r)의 저항치가 상기 배선(12,13)의 시트저항보다 높게 설정되어 있는 것을 특징으로 하는 반도체장치.
- 반도체장치의 번인방법에 있어서, 복수개의 집적회로에 칩영역(11)을 갖추고 있고, 상기 복수개의 칩영역(11)에 공통으로 접속된 배선(12,13)을 갖춘 웨이퍼상태의 반도체장치(10)를 준비하여 상기 공통배선(12,13)에 전원전압 및 신호를 인가함으로써 번인을 행하는 것을 특징으로 하는 반도체장치의 번인방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1169659A JP2585799B2 (ja) | 1989-06-30 | 1989-06-30 | 半導体メモリ装置及びそのバーンイン方法 |
JP1-169659 | 1989-06-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR910001975A true KR910001975A (ko) | 1991-01-31 |
KR940006577B1 KR940006577B1 (ko) | 1994-07-22 |
Family
ID=15890557
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900009729A KR940006577B1 (ko) | 1989-06-30 | 1990-06-29 | 반도체장치 및 그 번인방법 |
Country Status (5)
Country | Link |
---|---|
US (2) | US5138427A (ko) |
EP (1) | EP0405586B1 (ko) |
JP (1) | JP2585799B2 (ko) |
KR (1) | KR940006577B1 (ko) |
DE (1) | DE69030283T2 (ko) |
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JPH0227467A (ja) * | 1988-07-16 | 1990-01-30 | Fuji Electric Co Ltd | 演算装置間の同期方法 |
JP2746925B2 (ja) * | 1988-08-04 | 1998-05-06 | 株式会社リコー | 画像形成装置 |
JPH039364A (ja) * | 1989-06-06 | 1991-01-17 | Toshiba Corp | 電子写真感光体 |
JP2508288B2 (ja) * | 1989-08-30 | 1996-06-19 | 三菱電機株式会社 | 半導体記憶装置 |
JPH03106029A (ja) * | 1989-09-20 | 1991-05-02 | Fujitsu Ltd | ウエハ・スケール・ic |
US5070296A (en) * | 1990-06-22 | 1991-12-03 | Honeywell Inc. | Integrated circuit interconnections testing |
US5059899A (en) * | 1990-08-16 | 1991-10-22 | Micron Technology, Inc. | Semiconductor dies and wafers and methods for making |
-
1989
- 1989-06-30 JP JP1169659A patent/JP2585799B2/ja not_active Expired - Fee Related
-
1990
- 1990-06-29 DE DE69030283T patent/DE69030283T2/de not_active Expired - Fee Related
- 1990-06-29 EP EP90112467A patent/EP0405586B1/en not_active Expired - Lifetime
- 1990-06-29 KR KR1019900009729A patent/KR940006577B1/ko not_active IP Right Cessation
- 1990-07-02 US US07/547,036 patent/US5138427A/en not_active Expired - Lifetime
-
1992
- 1992-08-10 US US07/926,432 patent/US5294776A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2585799B2 (ja) | 1997-02-26 |
EP0405586A1 (en) | 1991-01-02 |
EP0405586B1 (en) | 1997-03-26 |
KR940006577B1 (ko) | 1994-07-22 |
US5294776A (en) | 1994-03-15 |
JPH0334555A (ja) | 1991-02-14 |
DE69030283T2 (de) | 1997-08-07 |
US5138427A (en) | 1992-08-11 |
DE69030283D1 (de) | 1997-04-30 |
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