JP2006049482A - 半導体装置製造方法およびウエハ加工用テープ - Google Patents
半導体装置製造方法およびウエハ加工用テープ Download PDFInfo
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- JP2006049482A JP2006049482A JP2004226707A JP2004226707A JP2006049482A JP 2006049482 A JP2006049482 A JP 2006049482A JP 2004226707 A JP2004226707 A JP 2004226707A JP 2004226707 A JP2004226707 A JP 2004226707A JP 2006049482 A JP2006049482 A JP 2006049482A
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- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
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- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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Abstract
【解決手段】基材フィルム(1)上に粘着剤層(2)および接着剤層(3)を有してなるウエハ加工用テープであって、該テープが凸型金属電極(4)付きウエハ回路基板(5)に貼合された状態で、該ウエハ回路基板の裏面を研削する研削工程と、該ウエハ回路基板を個片化するダイシング工程とがなされ、かつ、該個片化されたチップをピックアップする工程において、前記接着剤層(3)が前記基材フィルム(1)から剥離し該チップに接着した状態でピックアップされるウエハ加工用テープ。
【選択図】図1
Description
そこで、半導体素子の大きさとほぼ同じサイズの半導体装置を実装する方法としてフリップチップ 実装が提案されている。フリップチップ実装は、近年の電子機器の小型化、高密度化に対して半導体 素子を最小の面積で実装できる方法として注目されてきた。このフリップチップ実装に使用される半導体素子のアルミ電極上にはバンプが形成されており、バンプと回路基板上の配線とを電気的に接合する。これらのバンプの組成としては、主に半田が使用されておりこの半田バンプは、蒸着やメッキで、チップの内部配線につながる露出したアルミ端子上に形成する。他にはワイヤーボンディング装置で形成される金スタッドバンプなどがある。
この問題を解決するため、バンプと基板とを接続した後、接合部分の信頼性を向上させるために、半導体素子と基板の間隙を樹脂ペーストまたは接着フィルムで埋めて硬化させて半導体素子と基板とを固定する方法が採用されている。
しかしながら、従来の裏面研削用粘着テープと接着フィルムの組み合わせでは、接着フィルムとの親和性が高く、裏面研削後の剥離力が上昇しやすく剥離工程でのウエハ損傷を生じやすいという問題を抱えている。また、接着フィルムの凹凸基板への埋め込み性を上げて接着信頼性を高めるためには、加熱貼合時の溶融粘度を落とすことが必要となるが、加熱貼合により粘着テープからの剥離力は上昇する傾向にあり加熱貼合後の粘着テープからの剥離が難しくなるという問題点を抱えている。
(1)基材フィルム上に粘着剤層および接着剤層を有してなるウエハ加工用テープであって、該テープが凸型金属電極付きウエハ回路基板に貼合された状態で、該ウエハ回路基板の裏面を研削する研削工程と、該ウエハ回路基板を個片化するダイシング工程とがなされ、かつ、該個片化されたチップをピックアップする工程において、前記接着剤層が前記基材フィルムから剥離し該チップに接着した状態でピックアップされることを特徴とするウエハ加工用テープ、
(2)前記ピックアップ工程において、前記粘着剤層が前記基材フイルと接着したまま、前記接着剤層のみが前記チップに接着した状態で、前記粘着剤と剥離することを特徴とする(1)項に記載のウエハ加工用テープ、
(3)前記粘着剤層がアクリル系共重合体を主成分とし、ゲル分率が60%以上であることを特徴とする(2)項に記載のウエハ加工用テープ、
(4)前記粘着剤層が放射線硬化性であることを特徴とする(1)〜(3)のいずれか1項に記載のウエハ加工用テープ、
(5)前記接着剤層が熱硬化性であることを特徴とする(1)〜(4)のいずれか1項に記載のウエハ加工用テープ、
(6)前記接着剤層が、少なくともアクリル樹脂、エポキシ樹脂、またはポリイミド樹脂のいずれかを成分として有し、25℃貯蔵弾性率が1MPa以上、80℃貯蔵弾性率が0.05MPa以下であることを特徴とする(1)〜(5)のいずれか1項に記載のウエハ加工用テープ、
(7)前記粘着剤層がアクリル系共重合体を主成分とし、該アクリル系共重合体が主鎖に対して少なくとも放射線硬化性炭素−炭素二重結合含有基、水酸基及びカルボキシル基を含有する基をそれぞれ有するアクリル系共重合体を主成分とすることを特徴とする(1)〜(6)のいずれか1項に記載のウエハ加工用テープ、
(8)(1)項に記載のウエハ加工用テープを使用する半導体装置の製造方法であって、
該テープが凸型金属電極付きウエハ回路基板に貼合される工程と、該ウエハ回路基板の裏面を研削する研削工程と、該ウエハ回路基板を個片化するダイシング工程と、該個片化されたチップをピックアップする工程と、該ピックアップされたチップを別基板にフリップチップ接続する工程とを有することを特徴とする半導体装置の製造方法、
(9)研削工程後かつダイシング工程前に、前記凸型金属電極付きウエハ回路基板に貼合されたウエハ加工用テープに、ダイシング用粘着テープをさらに貼合することを特徴とする(8)項に記載の半導体装置の製造方法、および
(10)研削工程後かつダイシング工程前に、ウエハ加工用テープが貼合された前記凸型金属電極付きウエハ回路基板の裏面に、ダイシング用粘着テープをさらに貼合することを特徴とする(8)項に記載の半導体装置の製造方法
を提供するものである。
また、本発明のウエハ加工用テープは、ウエハ裏面研削工程、ダイシング工程、ダイホンディング工程まで一貫して使用することができ、上記のフリップチップ実装基板の製造方法に用いるのに好適である。
粘着剤の厚さについては、5〜50μmが好ましい。
フィルムの厚みは50〜200μmが好ましく用いられる。この基材フィルム上に上記の粘着剤層を積層したものを、以下、「保護フィルム」ともいう。
また、上記接着フィルムには、導電性、熱伝導性の付与を目的として金属製微粉末やその他導電性もしくは熱伝導性に優れる材料を添加することも可能である。
また、上記接着フィルムには、熱安定性向上を目的として金属酸化物やガラス等の微粉末を添加することも可能である。
上記接着剤は、貼合時には十分柔らかく基板凹凸面にボイドを生じることなく埋め込まれることが接着信頼性を確保するために重要であるが、裏面研磨の際には変形しない0.1MPa程度以上の弾性率が必要である。基板凹凸面にボイドを生じないためには貼合時の弾性率を0.05MPa以下とするのが好ましく、接着剤を回路基板に残して剥離する際には粘着性の消失する1MPa以上であることが好ましい。
ダイ接着用接着剤層の厚さは5〜50μmであることが好ましい。
ダイシング時の接着フィルムと保護テープの剥離力は、好ましくは0.5〜10N/25mm、放射線照射時の接着フィルム付きチップと保護テープの剥離力は0.5〜0.05N/25mmが好ましい。
図1(a)の断面図で示されるように、ウエハ加工用テープは、基材フィルム1に粘着剤層2が積層された保護テープ(BGテープ)に接着剤層3が積層されている。
接着剤層3には、絶縁性フィルム(NCF)または異方導電性フィルム(ACF)が使用される。
次いで、図1(c)の断面図で示されるように、凸型金属電極(バンプ)4を有するウエハ回路基板5にウエハ加工用テープを貼合して加熱し、凸型金属電極4を接着剤層3に埋め込み貼合し、裏面を破線で示される分だけ研削加工して所定厚さとする。図1(b)は、1(c)の工程における平面図であり、6は金バンプウエハ、7はリングフレームを示す。次いで、当該回路基板に加工用テープを貼合したまま、放射線照射した後、ウエハ回路基板をダイシングし(図1(d))、チップをピックアップする(図1(e))。その際、ウェハ加工用テープの接着剤層3は保護テープ粘着剤層2から剥離し、チップに接着したままピックアップされ、ダイボンド工程において接着剤として使用し、半導体装置を製造する。
図3(a)の断面図で示されるように、ウエハ加工用テープは、基材フィルム1に粘着剤層2が積層された保護テープ(BGテープ)に接着剤層3が積層されている。次いで、図3(b)の断面図で示されるように、凸型金属電極(バンプ)4を有するウエハ回路基板5にウエハ加工用テープを貼合して加熱し、凸型金属電極4を接着剤層3に埋め込み貼合して、裏面を破線で示される分だけ研削加工して所定厚さとする。次いで、ウェハの研削面にダイシング用粘着テープ8を貼合し、放射線照射した後、ウエハ回路基板8を保護テープ上からダイシングする。図3(c)はこの工程における平面図で、7はリングフレーム、9は金バンブウエハと接着剤層と保護テープを示す。また、図3(d)はこの工程における断面図である。その後、剥離テープを用いて基材フイルム1と粘着剤層2を有する保護テープを剥離させ、接着剤層3の接着したチップをピックアップする(図3(e))。この接着剤層3は、ダイボンド工程において接着剤として使用し、半導体装置を製造する。
ゲル分率(%)=(不溶解分の重量/秤取した粘着剤層の重量)×100
2.粘着剤二重結合量:加熱乾燥された粘着剤約10gに含まれる炭素炭素二重結合量を真空中暗所における臭素付加反応による重量増加法により定量測定した。
3.ピックアップ成功率:実施例および比較例に基づいて作成した加工用テープを室温または80℃×10秒で電極付きウエハへ貼合し、ウエハ厚さ50μmとなるまで裏面を研削した後、ウエハを10mm×10mmにダイシングし、その後、必要に応じて粘着剤層に紫外線を空冷式高圧水銀灯(80W/cm、照射距離10cm)により200mJ/cm2照射した後、ダイボンダー装置(ルネサス東日本社製3段階突き上げ方式)によるピックアップ試験を行い、ピックアップチップ100個でのピックアップ成功率を求めた
4.ウエハ裏面研削性
○: ウエハの破損及びマイクロクラックの発生が無い。
×: ウエハの破損或いはマイクロクラックの発生が有る。
5.ダイシング性
○: ダイシング中に加工用テープが剥離する。
×: ダイシング中に加工用テープが剥離しない。
6.耐リフロー信頼性
○: 実施例により作成したフリップチップパッケージの吸湿後の耐リフロー信頼性 評価においてJEDECレベル3の処理でもパッケージクラックを生じない。
×: JEDECレベル3の処理でパッケージクラックを生じる。
接着フィルムの25℃または80℃での弾性率は、粘弾性計(レオメトリックサイエンス社製、商品名:ARES)を用いて、0℃から測定を開始し昇温速度5℃/分、周波数1Hzで、動的粘弾性を測定し、25℃または80℃に達した時点での貯蔵弾性率G´をそれぞれの弾性率とした。
JIS Z0237に準拠してUV照射前後のそれぞれの剥離力を測定した(UV照射量は、1000mJ/cm2)。80℃に加熱されたシリコンウエハーミラー面にウエハ貼着用粘着テープを加熱貼合し、接着剤層と粘着テープ間の剥離力を測定した。試験は90°剥離、剥離速度50mm/分で行った。
ブチルアクリレート65部、2−ヒドロキシエチルアクリレート25部、アクリル酸10部を原料として溶液ラジカル重合により共重合体を得た。次にこの共重合体に2−イソシアネートエチルメタクリレートを滴下反応させることで共重合体を作成した。2−イソシアネートエチルメタクリレート滴下量と溶液ラジカル重合の反応時間を調整して、炭素炭素二重結合量および分子量の異なる共重合体A1〜A6、A11〜A13を作成した。
化合物(A)に化合物(B)硬化剤としてポリイソシアネート化合物(日本ポリウレタン社製、商品名コロネートL)、化合物(C)光開始剤としてα-ヒドロキシシクロヘキシルフェニルケトンを下記表1の配合比で混合し、粘着剤を得た。
各々乾燥後の粘接着剤厚さを10μmとし、高密度ポリエチレン樹脂フィルム(100μm)に塗工し、粘着テープを作成した。この粘着テープと後述する厚さ25μmのエポキシ樹脂を主成分とする接着フィルムを室温にて積層ラミネートすることでウエハ加工用テープを作成した。
(接着フィルム1の作成)
エポキシ樹脂としてクレゾールノボラック型エポキシ樹脂(エポキシ当量197、分子量1200、軟化点70℃)100重量部、シランカップリング剤としてγ−メルカプトプロピルトリメトキシシラン1.5重量部、γ−ウレイドプロピルトリエトキシシラン3重量部、平均粒径16nmのシリカフィラー30重量部からなる組成物に、シクロヘキサノンを加えて攪拌混合し、更にビーズミルを用いて90分混練した。
これにアクリル樹脂(重量平均分子量:20万、ガラス転移温度−17℃)100重量部、6官能アクリレートモノマーとしてジペンタエリスリトールヘキサアクリレート5部、硬化剤としてヘキサメチレンジイソシアネートのアダクト体0.5部、キュアゾール2PZ(四国化成(株)製商品名、2−フェニルイミダゾール)2.5部を加え、攪拌混合し、真空脱気し、接着剤を得た。
接着剤を厚さ25μmの離型処理したポリエチレンテレフタレートフィルム上に塗布し、110℃で1分間加熱乾燥して、膜厚が40μmのBステージ状態の塗膜を形成し、キャリアフィルムを備えた接着フィルム1を作製した。
硬化剤としてヘキサメチレンジイソシアネートのアダクト体0部とし、キュアゾール2PZにかえてキュアゾール2PHZ(四国化成(株)製商品名、2−フェニル-4,5−ジヒドロキシイミダゾール)2.5部とした以外は接着フィルム1の作成と全く同様の操作を行い、接着フィルム2を作製した。
エポキシ樹脂としてクレゾールノボラック型エポキシ樹脂(エポキシ当量197、分子量1200、軟化点70℃)50重量部、硬化剤としてヘキサメチレンジイソシアネートのアダクト体1部とした以外は接着フィルム1の作成と全く同様の操作を行い、接着フィルム3を作製した。
表1の組み合わせで得られるウエハ加工用テープを金スタッドバンプ付き5インチウエハに80℃ホットプレート上にて加熱貼合した後、バックサイドグラインダーを使用して、回路基板の裏面側を研削加工する事により当該回路基板厚さを50μmに仕上げた。次いで、当該回路基板に加工用テープを貼合したまま、1000mJ/cm2UVでUV照射し、10×10mm角にダイシングした後、ピックアップダイボンダーにてチップを取り上げ、樹脂基板の電極位置に合わせてフリップチップを実装し、半導体装置を作成した。
表2の組み合わせで得られるウエハ加工用テープを用いて実施例と同じ工程により半導体装置を作成評価した。
2 粘着剤層
3 接着剤層
4 凸型金属電極
5 ウエハ回路基板
6 金バンプウエハ
7 リングフレーム
8 ダイシング用粘着テープ
9 金バンブウエハ+接着剤層+保護テープ
Claims (10)
- 基材フィルム上に粘着剤層および接着剤層を有してなるウエハ加工用テープであって、該テープが凸型金属電極付きウエハ回路基板に貼合された状態で、該ウエハ回路基板の裏面を研削する研削工程と、該ウエハ回路基板を個片化するダイシング工程とがなされ、かつ、該個片化されたチップをピックアップする工程において、前記接着剤層が前記基材フィルムから剥離し該チップに接着した状態でピックアップされることを特徴とするウエハ加工用テープ。
- 前記ピックアップ工程において、前記粘着剤層が前記基材フイルムと接着したまま、前記接着剤層のみが前記チップに接着した状態で、前記粘着剤層と剥離することを特徴とする請求項1に記載のウエハ加工用テープ。
- 前記粘着剤層がアクリル系共重合体を主成分とし、ゲル分率が60%以上であることを特徴とする請求項2に記載のウエハ加工用テープ。
- 前記粘着剤層が放射線硬化性であることを特徴とする請求項1〜3のいずれか1項に記載のウエハ加工用テープ。
- 前記接着剤層が熱硬化性であることを特徴とする請求項1〜4のいずれか1項に記載のウエハ加工用テープ。
- 前記接着剤層が、少なくともアクリル樹脂、エポキシ樹脂、またはポリイミド樹脂のいずれかを成分として有し、25℃貯蔵弾性率が1MPa以上、80℃貯蔵弾性率が0.05MPa以下であることを特徴とする請求項1〜5のいずれか1項に記載のウエハ加工用テープ。
- 前記粘着剤層がアクリル系共重合体を主成分とし、該アクリル系共重合体が主鎖に対して少なくとも放射線硬化性炭素−炭素二重結合含有基、水酸基及びカルボキシル基を含有する基をそれぞれ有するアクリル系共重合体を主成分とすることを特徴とする請求項1〜6のいずれか1項に記載のウエハ加工用テープ。
- 請求項1に記載のウエハ加工用テープを使用する半導体装置の製造方法であって、
該テープが凸型金属電極付きウエハ回路基板に貼合される工程と、該ウエハ回路基板の裏面を研削する研削工程と、該ウエハ回路基板を個片化するダイシング工程と、該個片化されたチップをピックアップする工程と、該ピックアップされたチップを別基板にフリップチップ接続する工程とを有することを特徴とする半導体装置の製造方法。 - 研削工程後かつダイシング工程前に、前記凸型金属電極付きウエハ回路基板に貼合されたウエハ加工用テープに、ダイシング用粘着テープをさらに貼合することを特徴とする請求項8に記載の半導体装置の製造方法。
- 研削工程後かつダイシング工程前に、ウエハ加工用テープが貼合された前記凸型金属電極付きウエハ回路基板の裏面に、ダイシング用粘着テープをさらに貼合することを特徴とする請求項8に記載の半導体装置の製造方法。
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JP4776188B2 (ja) | 2011-09-21 |
WO2006014003A1 (ja) | 2006-02-09 |
US20070141330A1 (en) | 2007-06-21 |
TWI338028B (en) | 2011-03-01 |
US8043698B2 (en) | 2011-10-25 |
KR20070033046A (ko) | 2007-03-23 |
CN1993809B (zh) | 2010-05-05 |
MY147216A (en) | 2012-11-14 |
CN1993809A (zh) | 2007-07-04 |
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