TWI338028B - Method of producing a semiconductor device, and wafer-processing tape - Google Patents

Method of producing a semiconductor device, and wafer-processing tape Download PDF

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Publication number
TWI338028B
TWI338028B TW094126112A TW94126112A TWI338028B TW I338028 B TWI338028 B TW I338028B TW 094126112 A TW094126112 A TW 094126112A TW 94126112 A TW94126112 A TW 94126112A TW I338028 B TWI338028 B TW I338028B
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TW
Taiwan
Prior art keywords
wafer
tape
adhesive layer
wafer processing
substrate
Prior art date
Application number
TW094126112A
Other languages
English (en)
Other versions
TW200613502A (en
Inventor
Morishima Yasumasa
Kita Kenji
Ishiwata Shinichi
Yamakawa Takanori
Original Assignee
Furukawa Electric Co Ltd
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Publication date
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Publication of TW200613502A publication Critical patent/TW200613502A/zh
Application granted granted Critical
Publication of TWI338028B publication Critical patent/TWI338028B/zh

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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
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    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561—Batch processing
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Description

九、發明說明： 【發明所屬之技術領域】 t明侧於-種半導體裝置之製造方法，亦關於 0於該製造方法之晶圓加工用膠帶 【先前技術】 之發ΐ著ίί來電子機器？置(電子裝置)小型，薄裂化 導ϊ70件之更南密度封裝技術之建立有其強 1而’。目刖使用引線架以封裝半導體裝置之方法已 無法迎合如此高密度封裝之需求。此外， 合半導體元件之晶粒黏接材料中，以使用樹脂糊膠為主 之方法係為目前之主流。 因此，乃有覆晶封裝方法之提案，藉以封裝具有尺 寸與半導體7L實質上件相同之半導體裝置。由於覆晶封 裝技術係將半導體元件封裝在最小面積内，可與目前小 尺寸高密度之電子機器裝置之發展相呼應，故頗受矚 目。該覆晶封裝所用之半導體元件之I呂電極上形成有凸 塊，且該凸塊係與電路基板上之配線電性連接。至於凸 塊之組成，主要是使用焊錫，且該焊錫凸塊係形成在鋁 瑞子上，而該鋁端子則曝露且藉由層積或電鍍而連接於 晶片之内部配線。凸塊之其他型態則包括形成於引線搭 接部之金質短柱狀凸塊。 如果此種以覆晶連接方式之半導體裝置係以如此方 式來使用，則連接部之電極會曝露於大氣，則在經歷例 如迴焊（solder reflow)步驟等後續製程之受熱歷程 1338028 (thermal history)中，會有巨大應力作用於凸塊之 部’因為晶片與基板之熱膨脹係數差異甚大，而產生封 * 裝可靠性方面的問題。 - 為解決此問題，乃採用-種方法，其係、在凸塊連接 於基板後，用_娜或齡麟人半導體元件盘基板 •，之間隙，然後使之可硬化並固定，而將半導體^件穩 疋設在基板上，以改善連接部之可靠性。 〜 再者，在切割步驟至晶粒黏接步驟中，膠帶亦被提 •案使用作可移除黏著帶或黏合帶。然而，業經發現，由 於伴隨UV放射線所形成之三維交聯結構，用以黏接之 可移除黏著劑或黏合劑在UV固化後很難保持樹脂之流 •動性。因此，填充料無法令人滿意地填入基板之不規則 表面，而無法獲致黏貼可靠性。 * 同時，一般而言，以覆晶封裝之半導體元件具有許 多電極，且因電路設計上的問題，該等電極係配設在半 導體元件周圍。因此，在填充樹脂糊膠時，如果利用毛 \細管現象將液態樹脂從該等半導體元件之兩電極間之間 隙注入，則樹脂不能充分擴散，很容易產生未填充部份， 而導致各種操作上之缺失’例如半導體元件之動作容易 不穩定、及对屋可靠性很低的問題。而且，當晶片尺寸 ·.更小時，基板會因溢流之液態樹脂而污染。同時，當電 入極間距很窄時，樹脂不容易注入。此外，在覆晶連接式 半導體元件内填入樹脂’要4太長時間，在固化步驟上， 又再造成生產性的問題。利用熱壓法將黏合膜一次黏貼 6
磨或切除的問題。 然而 合方法中 ，又增加了厚晶圓背面需要研
了背面研磨後剝離力容易增加的問題，而且因而導致晶 圓容易在剝離步驟中受損。而且，為了改良黏合膜對不 規則表面之可填人性，藉以提升#貼之可靠性，於加熱 下施用黏合膜時’必須降低溶融點度。但是在加熱下施 用及黏貼時’黏合膜從可移雜㈣麻之力量有增加 之傾向，故導致在加熱下獅後，_合膜很難從可移 除黏著膠帶剝離的問題。 本發明之其他及進一步之優點，可從佐以圖式之下 文說明中更為充分而明晰。 【發明内容】 依本發明’可提供下列各項技術手段： (1) 一種晶圓加工用膠帶，包括形成於基板膜上之 可移除黏著層及黏合層，其中，該膠帶係使用於包括下 列步驟之加工製程：將具有凸型金屬電極之晶圓電路基 板之背面施以研磨；在該膠帶黏貼於該晶圓電路基板之 狀態下’將該晶圓電路基板切割成晶片；在黏合層從基 板膜剝離但仍黏合於各別晶片之狀態下拾取晶片。 1338028 ' (2)如上述（1)之晶圓加工用膠帶，其中，於拾取步 .·驟中，晶片係在可移除黏著層黏著於基板膜，而僅黏合 層黏合於晶片之狀態下從可移除黏著層剝離。 (3)如上述(2)之晶圓加工用膠帶，其中，該前述可 : 移除黏著層包含丙烯基型共聚物為主成分，且具有凝膠 • 百分比60%或更多。 如上述（1)至(3)中任一項之晶圓加工用膠帶’其 中，則述可移除黏著層為放射線可固化型。 | (2)如上述(1)至(4)中任一項之晶圓加工用膠帶，其 中’前述黏合層為熱可固化型。 (2)如上述(1)至(5)中任一項之晶圓加工用膠帶，其 中’前述黏合層包含丙烯酸樹脂、環氧樹脂或聚醯亞胺 * 樹脂之至少任一種作為其成份’且具有25°ClMpa或更 多之儲存彈性模數及80Ϊ 0.05MPa或更少之儲存彈性 模數。 (7)如上述(1)至(6)中任一項之晶圓加工用膠帶，其 ^’前述可移除黏著層包含丙烯基型共聚物作為其主成 ，份’該丙烯基型共聚物之主成份係由具有至少一放射線 可固化含碳一碳雙鍵之基團、及主鏈上含羥基及羧基之 基團所組成之丙烯基型共聚物（1)之基團組成。 “ （8) 一種使用依據上述（1)之晶圓加工用膠帶製造 半導體裝置之方法，包括下列步驟： - 將上述膠帶黏貼於具有凸型金屬電極之晶圓電路基 板； 8 1338028 研磨該晶圓電路基板之背面； 將該晶圓電路基板切割成晶片； 拾取晶片；及
將拾取之晶片以覆晶方式黏貼於基板上。 (9) 如上述(8)之半導體裝置之製造方法，其中，復 包括：在研磨步驟之後，切割步騍之前，將切割用可移 除黏著帶黏著於已黏貼至具有凸型金屬電極之晶圓電路 基板的晶圓加工用膠帶。
(10) 如上述(8)之半導體裝置之製造方法，其中，復 包括.在研磨步驟之後、切割步驟之前，將切割用可移 除黏著帶黏著於具有凸型金屬電極之晶圓電路基板之背 面’而該電路基板係已黏貼有晶圓加工膠帶。 本說明書中，“可移除黏著劑”一詞意指能夠黏貼 並在諸如固化等處理後予以移除之黏劑，而“黏合劑” 一凋意旨僅能黏合之黏劑。例如，“放射線可固化可移 除黏著劑”意旨在可移除黏著劑施用至晶圓等物體後，
可經由例如UV等放射線照射使之固化，然後將苴移除 或剝離之黏劑。 Μ ’、 再者’“黏合層”-詞意指在半導體晶Ε在安 切割及拾取晶片時’可*可移除黏著層㈣且^ 附在晶片之層，而在晶片安裝、㈣於基板或=點 該黏合層可用作黏合劑。 f ’ 此外，可移除黏著層”一詞意指，與黏合 較，對貼合對象之_力較小之層，討㈣暫時=比 1338028 之表面剝開分 規定之方法來 同時，“剝離力’’ 一詞意指從所黏貼 離所需之力量，其可依據日本Jis 2〇237 量測。 依本發明之晶圓加工用璆帶，具有金 使用該膠帶進行覆晶封裝之方法，在形成 =曰: 構造上展現顯著之效果，同時呈現出薄晶圓可安二 地施行加工且整體製程可縮短之優異效果。 王 而且’本發明之晶圓加工用膠帶可使用在晶面 研磨步驟、切割步驟及晶圓黏貼步驟的整個製程，同 很適用於製造覆晶封裝基板之上述方法中。 、 【實施方式】 ψ
本申請案之發明人等經進行各種研究，以解決前述 習知之覆晶封I作業之問題，結果發現，藉由在具有凸 型面金屬電極之晶圓電路基板之背面研磨之前，將里有 特定黏合膜層之特定保護膠帶黏著至電極表面； 黏著有保護膠帶之狀態下將晶圓電路基板切割成晶片； 以及藉由從具有電極之電路基板剝離保護膠帶時僅剝離 保護膠帶，而使黏合膜㈣於具有金屬電極之晶圓電路 基，時，黏附有黏合膜之經切割晶圓電路基板可以容易 且安全地與基板進行覆晶黏貼，且可進-步縮短習知之 製造過程。本發明即基於上述發現而完成者。 本發明將詳細說明於下文中。 本發明之晶圓加工膠帶具有基板膜、形成於基板膜 上之可移除黏著層及黏合層。可移除黏著層以含有丙烯 10 1338028 基型共聚物作為其主要成分(以80質量％或更多為佳）。 可使用之丙烯基型共聚物以側鏈至少含有放射線可固化 碳-碳雙鍵、環氧基及羧基作為基本成分之丙烯基型共聚 物為佳。如何製造該丙烯基型共聚物並無特別限制，例 如可使用諸如具有光可聚合之碳-碳雙鍵及官能基之丙 烯基型共聚物或f基丙烯基型共聚物等化合物（I)，與具 有可與上述官能反應之官能基之化合物(2)反應而製得。
♦ 於該等化合物中，上述具有光可聚合碳-碳雙鍵及官 能基之化合（1)，可經由將例如丙烯酸烷酯或曱基丙烯酸 烷酯等具有光可聚合碳-碳雙鍵之單體((1)-1)，與具有官 能基之單體((1)-2)反應而製得。單體((1)-1)可包括：例如 分別具有6至12個碳原子之丙烯酸己酯、丙烯酸正辛 酯、丙烯酸異辛酯、丙烯酸2-乙基己酯、丙烯酸十二烷
6旨、丙烯酸十烧S旨，或例如丙稀酸戊醋、丙烯酸正丁酷、 丙烯酸異丁酯、丙烯酸乙酯及丙烯酸曱酯，或彼等之甲 基丙烯酸酯等具有5個或更少個碳原子之單體。於單體 ((1)-1)之情況中’當單體之碳原子數增加時，玻璃移轉 溫度會變低，因此可達成具有所欲玻璃移轉溫度之單體 之製造。再者’除了玻璃移轉溫度外，具有碳-碳雙鍵之 低分子化合物（例如乙酸乙烯酯、苯乙烯及丙烯醯腈）可 於5質量％或5質量。/。以下之範圍混合。 單體((Ό·2)所具有官能基之例子包括羧基、羥基、 胺基、環酸酐基、環氧基及異氰酸基。單體((1)-2)之具 體例包括丙烯酸、曱基丙烯酸、桂皮酸、衣康酸、富馬 11 1338028 酸、欧酸、丙稀酸2-經基烧醋類、曱基丙稀酸2-經基燒 酯類、二醇單丙烯酸酯類、二醇單曱基丙烯酸酯類、Ν_ 羥甲基丙烯醯胺、Ν-羥曱基曱基丙烯醯胺、烯丙醇、丙
烯酸Ν-烷基胺基乙酯類、曱基丙烯酸Ν-烷基胺基乙g旨 類、丙烯醯胺類、曱基丙烯醯胺類、馬來酸酐、衣康酸 酐、富馬酸酐、酞酸酐、丙烯酸環氧丙酯、曱基丙歸酸 環氧丙酯、烯丙基去水甘油基醚以及多異氰酸酯化合 物，其中異氰酸基以具有羥基或羧基及光可聚合之碳_ 碳雙鍵之單體部分胺基曱酸酯化。於化合物(2)中，作為 官能基使用者’於化合物（1)之官能基（亦即單體 為叛基或環酸酐基之情況中，包括羥基、環氧基、異氛 酸基等；或化合物（1)之官能基為羥基之情況中，包括環 酸酐基、異氰酸基等；於化合物（丨）之官能基為胺基之情 況中’包括環氧基、異氰酸基等；或於化合物⑴之官能 基為環氧基之情況中，包括羧基環酸酐基、胺基等。化 合物(2)之官能基之具體例包括於單體((1)·2)所列舉之具 體例之相同官能基者。經由於化合物（1)及（化合物(幻之 ，應中去除未反狀官能基’可製得具有本發明較佳定 義特徵(例如酸值或羥基值)之化合物。 進杆酸系共聚物之合成中，當經由溶液聚合而 時，可使用，系、醋系、醇系或芳族系之溶 機溶劑。其中，溶劑以-般使用於丙烯系聚合 佳溶劑例包括甲苯、乙酸乙賴、異丙醇、苯、甲基溶^
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劑、乙基溶纖劑、丙酮、曱基乙基酮等。聚合起始劑可 使用例如α，α-偶氮雙異丁腈等一般偶氮雙系之自由基產 生劑’及例如笨甲醯基過氧化物等有機過氧化物系。此 時，如有需要，可選擇性添加催化劑、聚合起始劑等。 此方法中’經由控制聚合溫度及聚合時間，可獲得具有 預期分子量之丙烯系共聚物。以分子量之控制而言，以 使用硫醇系或碳·四氣化物系之溶劑為佳。此外，共聚合 不限定為溶液聚合，亦可於其他方法(例如塊狀聚合、懸 浮聚合等）中進行。 依上所述方法，可獲得丙烯系共聚物。本發明中， 丙烯系共聚物之分子量，以約300,000至約1,000,000為 佳。若分子量過小時，來自放射線照射之内聚力變較少， 因此’於切割晶圓時，容易發生元件（晶片）之對準偏差， 且影像辨識困難。再者，為了儘可能避免元件之對準錯 誤’分子量以40〇,〇〇〇或以上為佳。若分子量過大時， 在合成及包覆時有凝膠化之可能性。再者，共聚物之性 質中’由於玻璃移轉溫度低，如果放射線照射不是呈圖 案，狀而為整體全部時，則放射線照射後，即便是大分 子量者’可移除黏著劑之流動性亦不充足。因此，雖然 並無拉伸後元件間之間隔不充足或於拾取時難以辨識影 像之問題，分子量仍以900,000或以下為佳。此處，本 發明之分子量意指換算為聚苯乙烯之質量平均分子量。 再者’本發明中，導入丙烯系共聚物之光可聚合碳_ 反雙鍵之用量以0.5至2.0meq/g(毫當量/克）為佳，更佳 13 1338028 為0.8至1.5meq/g。若雙鍵量過少時，放射線照射後， 暫時性黏著強度之降低效果變小。若雙鍵量過多時，放 .射線照射後，可移除黏著劑之流動性不足，結果，於某 些情況中，拉伸後所得元件間之間隔不足，而使各元件 ，於拾取時難以辨識影像。再者，於此情況中，該丙烯系 共象物本身之穩定力不足，且其本質上即難以製造。 —再者，本發明中，可移除黏著層固化之前的可移除 黏著劑之凝膠百分比(gel fracti〇n)，可經由調整丙烯基型 %共聚物之平均分子量及待掺合之硬化劑之用量予以控 制。凝膝百分比以60°/。或以上為佳，更佳為8〇至}〇〇0/〇。 若凝膠百分比過少時，可移除黏著劑成份傾向於在黏合 界面輕微移動，因此使其難以隨時間之經過而獲致剝離 " 力之穩定性。再者，丙烯系共聚物以具有OH基為佳， • 以使羥基值達5至1〇〇。由於放射線照射後，暫時性黏 著強度減低，因此進一步降低拾取錯誤之風險。此外， 丙烯系共聚物以具有COOH基為佳，以使酸值達〇.5至 30。由於膠帶復原（回復)性質改善，因此容易適應膠帶 ，•使用後之膝帶儲放型機制。於此同時，若丙烯系共聚物 羥基值過低，放射線照射後之暫時性黏著強度不能充分 減低，或若過咼時，放射線照射後之可移除黏著劑之流 / 動性會受損。 • 再者，於使用紫外線硬化（固化）本發明之放射線可 固化之可移除黏者劑之情況中，必要時可使用光可聚合 起始劑作為額外成分，該光可聚合起始劑可使用例如異 14 異丁基苯偶_、二苯甲_、米西勒_、 ^22 、、十二烷基噻噸鲷、二曱基噻噸酮、二乙 ί經基:美基Γ、α德環已基苯基_、 聚二lilt 4。相對於100質量份之丙烯系共 A t j始劑之混入量以0.01至5質量份為佳。 了移除黏考層之厚度以5至50# m為佳。 使用於本發明之底膜(base film)可為具有放射緩穿 一種材料之膜。膜材料例包括㈣烴之:i 如聚乙烯、聚丙晞、乙稀―共聚物、 聚(甲基丙稀酸曱_1 本程-塑曱膠“二 =，/丁_系共聚二== =外，底膜可由選自上述化合物組群之兩
合物組群之任何材料之單層、或二層或更化 該待用薄膜之厚度以50至200_為佳日。3^ :‘士積層上述可移除黏著層所得之材料在下文；‘ 保護膜(可移除或暫時黏貼膠帶)’，。 ”、 依本發明，晶圓黏貼黏合層可用黏合劑 :劑通常係用於晶粒黏貼，其為-種例如含有$备， 為其主成份之膜㈣合劑。 &氧樹脂 而且，細金屬粉及/或其他任一種導電性、莫 良之材料均可加人上述黏合财，而達成心導、Hz 15 1338028 或導熱性之目的。 再者，亦可在黏合膜中加入例如金屬氧化物或玻璃 之細粉’以達改良熱穩定性之目的。 為了確保黏貼之可靠性’在黏貼時，上述黏合劑需 足夠柔軟俾可填人基板之不規則表面而不會產生空孔， 此點非常重要。然後在研磨背面時’黏合劑必須具備約 O.IMPa或更大的彈性模數，使之不會變形。為了防止基 板之不規則表面發生空孔，黏貼時之黏合㈣性模數以 0.05MPa或以下為佳’但在黏合劑以保留在電路基板之 •狀態被剝離時’其彈性模數以1MPa或以上為佳 ’在此 彈性模數值下，其暫時黏合性會消失。 晶粒黏貼用黏和合層之厚度以5至50/zm為佳。 ，晶圓晶粒黏貼用黏合層可藉由塗布等方法設置在例 如聚對苯二曱酸乙二醇酯膜製之載體膜（carder> film) 上，而形成晶圓晶粒黏貼膜。在此情形中，在使用時， 載體膜係予以剝離。 ，由將以上述方式製得之保護膠帶與晶圓晶粒黏貼 ，•膜以平常方法積層，使可移除式黏著層與黏合層得以積 層，即可製得晶圓加工用膠帶。於晶圓加工用膠帶之較 佳實施形態中，黏合層係以與基板膜黏貼且在拾取步驟 僅有黏合層與晶片黏貼之形態從可移除黏著層剝離。當 晶圓加工用膠帶在加熱下黏貼於半導體晶圓時，可以保 ，持足夠的暫時性黏著強度，以防止在背面研磨及切割晶 圓時具有電極之晶圓從保護膠帶剝離。於拾取晶片時， 16 1338028 利用放射線固化，可移除黏著層可以輕易從具有黏合層 之晶片上剝離。 在切割時，黏合膜與保護膠帶間之剝離力以〇.5至 l〇N/25mm為佳。黏附有黏合膜之晶片與放射線照射後 之保護膠帶間的剝離力以0.5至〇.〇5N/25mm為佳。 上述可移除黏著層以放射線可固化型為佳。而且， 上述黏合層則以熱可固化型為佳。再者，上述黏合層以 含有丙烯酸樹脂、環氧樹脂或聚醯亞胺樹脂之至少一種 作為其成份，且具有IMPa或以上(通常為5〇Mpa或以 下）之25C儲存彈性模數及0.05MPa或以下（通常為 〇.〇5MPa或以上)之80°C儲存彈性模數為佳。又，該可移 除黏著層以含有丙烯基型共聚物作為其主成份為佳，該 丙烯基型共聚物含有至少具備放射線可固化之含碳/ 双鍵基團之丙烯基型共聚物作為其主成份，及在其主^ 上含有羥基及羧基之基團。
本發明之晶圓加工⑽帶係以黏貼於晶圓電路 之狀態使服具有金屬電極之晶_路基板之背面^ 步驟及該晶圓電路基板切割成晶片之步驟。因此 明之晶圓加工用膠帶在晶圓研磨時具 能，而且設有晶粒㈣黏合層供黏合晶片時使用之功 本發明之晶圓加工用膠帶可以例 用。該第1圖係揭示使用本發明 万式使 造半導體裝置之方法的實施二= ? = = 說明中，相同之元件係㈣相同的元件符號，並省= 17 1338028 說明。 如第1(a)圖之剖視圖所示之晶圓加工用膠帶中黏 .合層3係積層於-保護夥帶(BG膠帶），該保護膝帶設有 積層在基板膜1上之可移除黏著層2。 該黏合層3可使用不導電或絕緣膜(NCF)’或各向 異性(anisotropic)導電膜(ACF)。 其次，如第1(c)圖之剖視圖所示，該晶圓加工用膠 帶係黏貼於具有凸型金屬（例如黃金）電極（凸塊)4之晶圓 ^電路基板5，然後加熱，使該膠帶以凸型金屬電極4埋 入黏合層3之方式與基板相黏貼。其次，對背面研磨點 線所示之深度而達規定之厚度。第1(b)圖係為第1(c)圖 所示步驟之底視圖，其中，6表示具金質凸塊之晶圓，7 • 表示環架。然後，在加工用膠帶黏貼於電路基板之狀態 下對電路基板照射放射線，繼之，切割晶圓電路基板（第 1(d)圖）以拾取晶片（第i(e)圖）。此時，晶圓加工用膠帶 之黏合層3係從保護膠帶之可移除黏著層2剝離，並以 黏貼於晶片之狀態被拾取，而在晶粒黏貼步驟中用作黏 \合劑以製造半導體裝置。 第2圖為揭示使用本發明晶圓加工用膠帶製造半導 體裝置之方法的另一實施例程序說明圖。如第2(a)圖之 剖視圖所示，晶圓加工用膠帶包括積層於保護膠帶(BG 膠帶)之黏合層3，該保護膠帶設有積層於基板膜1之可 移除黏著層2。然後，如第2(a)圖之剖視圖所示’晶圓 加工用膠帶係黏貼於具有凸型金屬電極（凸塊Η之晶圓 18 電路基板5，闕進行加熱，藉以使膠帶以凸变金崩電 極4埋入黏合層3之方式與基板相㈣，制對背面研 磨點線所不之深度而達規定之厚度。然後，將切割用可 移除黏著帶8黏貼至保護膠帶之基板膜丨㈣。繼施以放 射線照射，再切割所得之晶圓電路基板5。帛2(c)圖為 該步驟之俯視圖H7表示環架，9表示金質凸塊晶 圓、黏合層及保護膠;f。其次，第2⑹圖為該步驟之别 視圖。然後’拾取晶片（第2⑷圖）。黏合層3係從保護 膠帶之可移雜著層2剝離，再以黏貼於晶片的狀態被 拾取而於曰曰粒之黏貼步驟中，該黏合層3係用作黏合 劑以製造半導體裝置。 扣不赞明之晶圓加工用膠帶製造半導體 之另一實施例程序說明圖。 如第3(a)圖所示，晶圓加工用膠帶具有黏合層3積 帶(BG膠帶)之構造’該保護膠帶則設有積層 所-之可移除黏著層2。其次’如第3(b)圖之剖 凸塊⑽帶餘貼於具有凸型金屬電極 =埋入點合層3之方式與基板黏 電 線所示之深度而诠昶— 卞才面研磨點 黏貼至晶圓之已=:厚度。將切割用可移除膠帶8 保護膠帶侧切然後從 俯視圖。其中，7矣 （）圖為該步驟之 圓、黏合層及保護膠二 19 7開（或剝離)膠帶，將具有基板膜1及可移 層3之保護膠帶從晶圓剝離，以拾取黏貼有黏合 第3(勻圖）。該黏合層3係在晶粒黏貼步驟 了 - 〇劑使用以製造半導體裝置。 基士=根據實施例更詳細地說明本發明，但並不意味 者本發明應受料實_限制。 〔實施例〕 以下各實施例之各種特性係按照下述之試驗來測試 及評估。而“份”係意指質量份。 主稱量得0.05g之可移除黏著層，浸 /貝於120 C溫度的5〇mi二曱苯24小時，將所得之二甲 苯經200篩目之不銹鋼網過濾，將留存在網上之不可溶 成份在ll〇°C下乾燥12〇分鐘，然後稱量該乾燥後之不 可溶成份之質量，並依下述之公式決定其凝膠百分比。 凝膠百分比(％)={(不可溶成份之質量)/(稱得之可 移除黏著層質量)}x 1〇〇 黏著劑俸鍵番：測量約l〇g經加熱並乾燥之 可移除黏著劑所含之雙鍵量並在真空中於黑暗處利用加 溴反應之質量增加法(mass increasing method)實施定量。 拾取成功率：將實施例與比較例所製得之各加工用 膠帶在大氣溫度或8(TC下黏貼於具有電極之晶圓秒 鐘’再研磨晶圓之背面至晶圓厚度達5〇em。其次，所 得晶圓切割成lOmmx lOmm之尺寸’然後，視需要以空 冷式高壓水銀燈(80W/cm，照射距離10cm)依200mJ/cm2 20 1338028 i 強度照射紫外線於可移除黏著層。其次，用晶粒黏貼測 試機（註：Renesas Eastern Japan Semiconductor，Inc.製 造之三階推力系統）實施拾取試驗，以測出每拾取100 片晶片之拾取成功率（％)。 晶圓背面研磨性: 〇：未觀察到晶圓有受損或發生微細龜裂。 X .觀察到晶圓有受損或有微細龜裂發生。 切割性: 〇：切割時，加工膠帶可剥離。 X :切割時，加工膠帶未剝離。 抗迴焊可靠性：在封裝潤濕後評估實施例或比較例 所製得之覆品封裝之抗迴焊可靠性 〇：即使在JEDEC等級3之程序中不發生龜裂。 X :在JEDEC等級3之程序中發生若干封裝龜裂。 彈性模數量測法：
黏合膜在25°C或80°C之彈性模數係以下述方式量 測：使用黏彈性量測器（商標名稱：ARES，Reometdc 3(^1^(：〇.製造）由°(：開始測量，且以5。(：/111丨11升溫速率 及頻率1 Hz之條件下測量動態黏彈性，其中，溫度達 25°C或80°C時之貯存彈性模數G’即定義為彈性模數。 剝離力量測法： 依曰本JIS Z0237之規定量測UV照射(UV照射量 1000mJ/Cm2)之前或之後的各剝離力。晶圓加工用膠帶 (晶圓黏貼帶或可移除黏著帶)係在加熱下黏貼於已加熱 21 至80 C之石夕晶圓之鏡面，以量測黏合層與可移除黏著層 間之剝離力。該項測試係在剝離肖90度、剝離速度 50mm/min之條件下實施。 化合街iMejt系共聚物之合成 使用65份丙烯酸丁酯、25份丙烯酸2-羥乙酯及10 份丙烯酸作為原料’經由溶液自由基聚合而獲得共聚 物。之後’對此共聚物滴入甲基丙烯酸2_異氰酸酯，使 兩者反應產生共聚物。控制曱基丙烯酸2-異氰酸酯之滴 入量以及溶液自由基聚合之反應時間，而製得具有不同 碳·碳雙鍵及分子量之共聚物A1至A6及All至A13。 對化合物(A)丙烯基型可移除黏著帶之製造分別添 加並混合聚異氰酸酯化合物（商標名稱：coronate，
Nippon P〇lyurethane Industry 公司製造)作為化合物(B) 硬化劑，以及α-經基環己基苯基_作為化合物(Q光起 始劑，其組成如表1所示，而獲得可移除黏著劑。 將任一種可移除黏著劑分別施用於可移除黏著層之 1¾密度聚乙烯(ΡΕ)樹脂膜(i〇〇ym)，其乾燥後厚度1〇y m,以製造可移除黏著帶。由此所獲得之可移除黏著帶， 於大氣溫度下’積層於含有環氧樹脂作為其主要成份之 25ym厚之黏合膜（其詳細說明載於下文中），以製造晶 圓加工膠帶。該積層物係以下述方法製造：可移除黏著 帶之可移除黏著層係積層且黏著於黏合臈之黏合層，而 後使用晶圓加工用膠帶將下文所述黏合膜之載體膜 離。 、 22 黏-合膜之臀法 (黏合膜1之製造） 於100質量份作為環氧樹脂之曱酚清漆型環氧樹脂 (環氧當量197，分子量1，200，及軟化點70。〇，作為石夕 烷偶合劑之1.5質量份之硫醇基丙基三曱氧基矽烷以 及3質量份之7*-脲基丙基三乙氧基矽烷，以及30質量 份平均粒徑16nm之氧化矽填充劑之組成物中，添加環 己酿I ’於攪拌下將彼等混合，其次使用珠磨機捏和9〇 分鐘。 於該捏和之混合物中，添加100質量份丙烯基樹脂 (質量平均分子量200,000，及玻璃移轉溫度-.17。〇，5質 量份季戊四醇六丙烯酸酯作為六官能性丙烯酸酯單體， 〇·5份六亞甲基二異氰酸酯之加成物作為硬化劑，以及 〇’5份Curesol 2ΡΖ(商標名稱，由Shikoku Kasei公司製 造，2-苯基咪唑）’於攪拌下將彼等混合，接著於真空下 進行除氣(deareating)，製得黏合劑。 將該黏合劑施用於25 // m厚之經離型處理 (releasing treatment)之聚乙烯對酞酸g旨(PET)膜，接著於 ll〇°C下加熱1分鐘乾燥，以形成具有40/zm厚度之薄 膜且置於B·階段狀態，而製得具有載體膜之黏合膜t。 (黏合膜2之製造） 除了作為硬化劑之六亞曱基二異氰酸酯使用〇份 (亦即不使用），且使用2.5份Curesol 2PHZ(商標名稱， 由Shikoku Kasei公司製造，2·苯基_4,5•二羥基咪唑)取 23 代Curesol 2PZ之外，以相同於黏合獏i之製造方法製 造黏合膜2。 (黏合膜3之製造） 除了使用50質量份之曱紛清漆型環氡樹脂（環氧洛 量197 ’分子量1，200’及軟化點70°C)作為環氧樹脂田 以及作為硬化劑之1份六亞曱基二異氰酸酯之外，以相 同於黏合膜1之製造方法製造黏著薄膜2。 (實施例1至7) 將藉由表1所示之組合而獲致之任一種晶圓加工用 膠帶，其中，各加工用膠帶之載體臈已剝除，將膠帶分 別以80°C熱板加熱下黏貼於具有金質柱狀凸塊之5英吋 晶圓’然後使用背面研磨機將電路基板之背面施以研 磨，使該電路基板具有最終厚度50/zm。其次，在加工 用膠帶黏貼於電路基板之狀態下，以1〇〇〇 mJ/cm2之劑 量對電路基板照射UV，繼切割晶圓成各為10mmx 10mm四方之晶片，以拾取黏晶機將所得晶片拾取，並 依據樹脂基板之電極位置封裝覆晶，而製得半導體裝置。 24 1338028
一撇 實施例7 On 1 1 ! 1 1 1 1 1 1 1 <r\ 〇 0.01 〇 〇 〇 0.45 0.50 〇 〇 寊施例6 Cl] CU < Ό 〇 900,000 ο m \Ti 5 m 00 1 > ,0.03 〇 〇 〇 0.35 0.38 i_ 〇 實施例5 ω α. < 寸 〇 〇 cT 〇 SO O rn CQ (N s 0.03 〇 〇 〇 卜 0.33 1_ 〇 實施例4 ω α. < 寸 CN 900,000 m CN m S 1 CQ CN v〇 00 ;0.03 〇 〇 〇 rn I 0.15 〇 實施例3 UJ α. < ΓΟ 00 d 160,000 v〇 1 CQ CN VO 0.03 〇 〇 〇 卜 0.14 〇 實施例2 c CN 700,000 v〇 tin VO « > CQ (N as 0.03 〇 〇 〇 s〇 1- 0.11 〇 實施例1 ω α. < 500,000 ο 寸 〇 s 1 CQ 90.5 0.03 〇 〇 〇 0.12 〇 保護膠帶支持物 保護膠帶之可移除黏著劑組成 雙鍵量 分子質量 羥基値 酸値 Tg(°C) 名稱 量價量份） 化合物(C) 凝膠百分比(％) 黏合膜 彈性模數(25〇C)(MPa) 彈性模數(8〇°C)(MPa) 晶圓背面硏磨性 切割性 抗迴焊可靠性 UV照射前 §盤 > θ D 拾取成功率(％) 化合物(A) 化合物(B) 酲？ m 1 酸 mz 鹦鎧 琳I冢 ㈣ 25 1338028
(比較例1至3) 依相同於上述實施例之方式製造半導體裝置，惟使 用表2之所示組合製成之任一種晶圓加工用膠帶，然後 依相同於上述之方柄所得元件進行測試評估。
B1 · Coronate L C:羥基環已基苯基_ 如表1及表2之紝 功率顯然較低，抗、回:果可以明瞭，各比較例之拾取3 實施例之所有特性，蛑性砰估亦差。相反的，本發明名 。估均甚優異。 26 1338028
產業可利用性 本發明適於作為利用覆晶封裝法製造半導體裝置之 步驟的製造方法，尤其是從具有金屬電極之晶圓之背面 研磨步驟至切割步驟及/或晶粒黏貼步驟中。而且，本發 明之晶圓加工用膠帶可適用於上述半導體之製造方法。 本發明業以上文之實施形態加以說明，惟本發明並不受 上文敘述細節之限制，除非另有指定，否則均應依附後 申請範圍所載技術精神及範圍内作廣義解釋。 27 1338028 【圖式簡單說明】 第1(a)圖至第1(e)圖為使用本發明之晶圓加工用膠 帶製造半導體裝置的實施形態程序說明圖。 第2(a)圖至第2(e)圖為使用本發明之晶圓加工用膠 帶製造半導體裝置的另一實施形態程序說明圖。 第3(a)圖至第3(e)圖為使用本發明之晶圓加工用膠 帶製造半導體裝置的又一實施形態程序說明圖。 【主要元件符號說明】
2 可移除黏著層 3 黏合層 4 金屬電極（凸塊） 5 晶圓電路基板 6 金質凸塊晶圓 7 環架 8 可移除黏著層
9 金質凸塊、黏合層及保護膠帶之組合結構 28

Claims (1)

  1. 丄州〇28 ·ι，Ι 修Λ I I搞充 第94126112號專利申請案 補充、修正後無劃線之說明書修正頁一式三份 十、申請專利範圍： 1.-種在基板膜上具有可移除 之晶圓加工用膠帶，其特徵乃在，Y 曰汉黏σ 4層 ,、，各Κ缺〜在该可移除黏著劑層係 二丙細酸糸共聚物為主成分且具有凝膠百分比60%以 黏合劑層係含有丙烯酸樹腊、環㈣脂或㈣ 〇= 少一種為主成分且8〇t儲存彈性模數為 〇.〇5MPa以下；Μ ’該膠帶係使用於包括下列步驟之 力:工製程··將具有凸型金屬電極之晶圓電路基板之背面 施以研磨；在該膠帶黏貼於該晶圓電路基板之狀態下， 將該晶圓電路基板㈣成^ ;絲合㈣從基板膜剝 離但仍黏合於各別晶片之狀態下拾取晶片。 2,如申請專利範圍第丨項中之晶圓加工用膠帶，其 中二於拾取步驟巾’晶片係在可移_著㈣黏著於基 板膜而僅點合劑層黏合於晶片《狀態下從可移除黏著劑 如申請專利範圍第1或2項中之任一項晶圓加工 用膠*'、中。玄可移除黏著劑層為放射線可固化型。 4·如申5青專利範圍第1或2項中之任一項晶圓加工 用膠帶’其中該黏合劑層為熱可固化型。 申明專利範圍第1或2項中之任一項晶圓加工 29 1338028 第94126112號專利申請案 補充、修正後無劃線之說明書修正頁一式三份 用膠帶，其中該黏合劑層之25°C儲存彈性模數為IMPa 、 以上。
    6.如申請專利範圍第1或2項中之任一項晶圓加工 用膠帶，其中該可移除黏著層劑係以丙烯酸系共聚物作 為主成份，而該共聚物則以在主鍵上具有至少一放射線 可固化含碳一碳雙鍵之基、及含有羥基及羧基之基團所 組成之丙烯酸系共聚物作為其主成分所構成。 7.如申請專利範圍第1或2項中之任一項晶圓加工 用膠帶，其中構成可移除黏著層劑之丙烯酸系共聚體之 玻璃轉移溫度為-65°C以上、-20°C以下。 8. —種使用申請專利範圍第1項所述之晶圓加工用 膠帶製造半導體裝置之方法，包括下列步驟： 將上述膠帶黏貼於具有凸型金屬電極之晶圓電路基 φ 板上； 研磨該晶圓電路基板之背面； 將該晶圓電路基板切割成晶片， 將上述切割成之晶片拾取；及 . 將該拾取之晶片以倒裝片接合方式黏貼於基板上。 9. 如申請專利範圍第8項之製造半導體裝置之方 法，包括：在研磨步驟之後、切割步驟之前，將切割用 30 1338028 第94126112號專利申請案 補充、修正後無劃線之說明書修正頁一式三份 可移除黏著帶進一步黏合於已黏貼於上述具有凸型金屬 ,1· 電極之晶圓電路基板的晶圓加工用膠帶上。 _ 10.如申請專利範圍第8項之製造半導體裝置之方 法，包括：在研磨步驟之後、切割步驟之前，將切割用 * 可移除黏著帶進一步黏合於已黏貼有晶圓加工膠帶之上 述具有凸型金屬電極之晶圓電路基板的背面。
    31
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