JP2011080033A - 接着剤組成物、接着剤シート及び半導体装置の製造方法 - Google Patents
接着剤組成物、接着剤シート及び半導体装置の製造方法 Download PDFInfo
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Images
Classifications
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Abstract
【解決手段】(A)熱可塑性樹脂と、(B)熱硬化性樹脂と、(C)潜在性硬化剤と、(D)無機フィラーと、(E)有機微粒子と、を含む、接着剤組成物。
【選択図】なし
Description
(a)主面の一方に複数の回路電極を有する半導体ウエハを準備し、該半導体ウエハの回路電極が設けられている側に、本実施形態に係る接着剤組成物からなる接着剤層を設ける工程と、
(b)半導体ウエハの回路電極が設けられている側とは反対側を研削して半導体ウエハを薄化する工程と、
(c)薄化した半導体ウエハ及び接着剤層をダイシングしてフィルム状接着剤付半導体素子に個片化する工程と、
(d)フィルム状接着剤付半導体素子の回路電極を半導体素子搭載用支持部材の回路電極に接合する工程と、
を備える。
先ず、接着剤シート10を所定の装置に配置し、保護フィルム1を剥がす。続いて、主面の一方に複数の回路電極20を有する半導体ウエハAを準備し、半導体ウエハAの回路電極が設けられている側に接着剤層2を貼付け、支持基材3/接着剤層2/半導体ウエハAが積層された積層体を得る(図3を参照)。回路電極20には、ハンダ接合用のハンダが塗布されたバンプが設けられていてもよい。なお導体素子搭載用支持部材の回路電極にハンダを設けることもできる。
次に、図4に示されるように、半導体ウエハAの回路電極20が設けられている側とは反対側をグラインダー4によって研削し、半導体ウエハを薄化する。半導体ウエハの厚みは、例えば、10〜300μmとすることができる。半導体装置の小型化、薄型化の観点から、半導体ウエハの厚みを20〜100μmとすることが好ましい。
次に、図5(a)に示されるように、積層体の半導体ウエハAにダイシングテープ5を貼付け、これを所定の装置に配置して支持基材3を剥がす。このとき、支持基材3が粘着剤層3aを備えており、粘着剤層3aが放射線硬化性である場合には、支持基材3側から放射線を照射することにより、粘着剤層3aを硬化させ接着剤層2と支持基材3との間の接着力を低下させることができる。ここで、使用される放射線としては、例えば、紫外線、電子線、赤外線等が挙げられる。これにより支持基材3を容易に剥がすことができる。支持基材3の剥離後、図5(b)に示されるように、半導体ウエハA及び接着剤層2をダイシングソウ6によりダイシングする。こうして、半導体ウエハAは複数の半導体素子A’に分割され、接着剤層2は複数のフィルム状接着剤2aに分割される。
次に、図7に示されるように、フィルム状接着剤2aが付着した半導体素子A’の回路電極20と、半導体素子搭載用支持部材8の回路電極22とを位置合わせし、フィルム状接着剤付半導体素子12と半導体素子搭載用支持部材8とを熱圧着する。この熱圧着により、回路電極20と回路電極22とが接合し電気的且つ機械的に接続されるとともに、半導体素子A’と半導体素子搭載用支持部材8との間にフィルム状接着剤2aの硬化物が形成される。
まず、主モノマーとして2−エチルヘキシルアクリレートとメチルメタクリレートを用い、官能基モノマーとしてヒドロキシエチルアクリレートとアクリル酸を用いた溶液重合法によりアクリル共重合体を合成した。得られたアクリル共重合体の重量平均分子量は40万、ガラス転移点は−38℃であった。このアクリル共重合体100質量部に対し、多官能イソシアネート架橋剤(日本ポリウレタン工業株式会社製、商品名「コローネートHL」)10質量部を配合して粘着剤組成物溶液を調整した。
<接着剤組成物の調製>
「ZX1356−2」(東都化成株式会社製商品名、フェノキシ樹脂)25質量部、「1032H60」(ジャパンエポキシレジン株式会社製商品名、エポキシ樹脂)25質量部、「エピコート828」(ジャパンエポキシレジン社製商品名、液状エポキシ樹脂)15質量部及び「HX3941HP」(旭化成エレクトロニクス株式会社製商品名、マイクロカプセル型潜在性硬化剤)35質量部を、トルエンと酢酸エチルとの混合溶媒中に溶解した。この溶液に、「KW−4426」(三菱レーヨン株式会社製商品名、コアシェルタイプの有機微粒子)10質量部、5μmの分級処理を行った平均粒径1μmコージェライト粒子(2MgO・2Al2O3・5SiO2、比重2.4、線膨張係数:1.5×10−6/℃、屈折率:1.57、)100質量部、を分散し、接着剤ワニスを得た。
得られた接着剤ワニスを、ポリエチレンテレフタレート(PET)フィルム(帝人デュポンフィルム社製、商品名「AH−3」、厚さ:50μm)上にロールコータを用いて塗布し、70℃のオーブンで10分間乾燥させて、厚み25μmの接着剤層を形成した。次に、接着剤層と上記支持基材における粘着剤層面とを常温で貼り合わせて、回路部材接続用接着剤シートを得た。
接着剤ワニスの調整における「KW−4426」の配合量を20質量部、コージェライト粒子の配合量を50質量部とした以外は実施例1と同様にして、回路部材接続用接着剤シートを得た。
接着剤ワニスの調整における「KW−4426」の配合量を7質量部、コージェライト粒子の配合量を125質量部とした以外は実施例1と同様にして、回路部材接続用接着剤シートを得た。
接着剤ワニスの調整における「KW−4426」に代えて「EXL−2655」(ロームアンドハースジャパン株式会社製商品名、コアシェルタイプの有機微粒子)30質量部を、コージェライト粒子に代えて「SE2050」(アドマテックス株式会社製商品名、平均粒径0.5μmのシリカフィラー)50質量部を、それぞれ配合した以外は実施例1と同様にして、回路部材接続用接着剤シートを得た。
接着剤ワニスの調整における「KW−4426」に代えて「EXL−2655」15質量部を、コージェライト粒子に代えて「SE2050」50質量部を、それぞれ配合した以外は実施例1と同様にして、回路部材接続用接着剤シートを得た。
接着剤ワニスの調整における「KW−4426」に代えて「EXL−2655」15質量部を、コージェライト粒子に代えて「SE2050」150質量部を、それぞれ配合した以外は実施例1と同様にして、回路部材接続用接着剤シートを得た。
接着剤ワニスの調整における「KW−4426」を配合しなかった以外は実施例1と同様にして、回路部材接続用接着剤シートを得た。
接着剤ワニスの調整におけるコージェライト粒子を配合しなかった以外は実施例2と同様にして、回路部材接続用接着剤シートを得た。
接着剤ワニスの調整におけるコージェライト粒子を配合せず、「KW−4426」に代えて「EXL−2655」35質量部を配合した以外は実施例1と同様にして、回路部材接続用接着剤シートを得た。
接着剤ワニスの調整におけるコージェライト粒子と「KW−4426」を配合しなかった以外は実施例1と同様にして、回路部材接続用接着剤シートを得た。
(線膨張係数測定)
実施例及び比較例で得られた回路部材接続用接着剤シートを180℃に設定したオーブンに3時間放置し、加熱硬化処理を行った。加熱硬化後の接着剤層を支持基材から剥離し、30mm×2mmの大きさの試験片を作製した。セイコーインスツルメンツ社製「TMA/SS6100」(商品名)を用い、上記試験片をチャック間20mmとなるよう装置内に取り付け、測定温度範囲:20〜300℃、昇温速度:5℃/分、荷重条件:試験片の断面積に対し0.5MPa圧力となる条件で、引張り試験モードにて熱機械分析を行い、線膨張係数を測定した。測定後、100℃と40℃の線膨張差を求め、温度差で割った値を算出し、これを平均線膨張係数として比較に使用した。
実施例及び比較例で得られた回路部材接続用接着剤シートにおける接着剤層をアルミ製測定容器に2〜10mg計り取り、パーキンエルマー社製DSC(Differential Scaning Calorimeter)「Pylis1」(商品名)を用いて、昇温速度20℃/分で30〜300℃まで昇温して発熱量を測定し、これを初期発熱量とした。次いで、熱圧着装置の加熱ヘッドをセパレータに挟んだ熱電対で温度確認を行って10秒後に250℃に達する温度に設定した。この加熱ヘッド設定で、回路部材接続用接着剤シートをセパレータに挟んで20秒間加熱し、熱圧着時と同等の加熱処理が施された状態の接着剤層を得た。加熱処理後の接着剤層についても同様に発熱量を測定し、これを加熱後の発熱量とした。また、回路部材接続用接着剤シートを室温(25℃)で14日間保管した後の接着剤層についても同様に発熱量を測定し、これを保管後の発熱量とした。得られた発熱量から次の式で反応率(%)を算出した。
反応率(%)=(初期発熱量−加熱後の発熱量又は保管後の発熱量)/(初期発熱量)×100
上記で得られた回路部材接続用接着剤シートを用い、下記の手順にしたがって、半導体装置を作製し、評価した。結果を表1及び表2に示す。
ジェイシーエム製のダイアタッチフィルムマウンターの80℃に加熱された吸着ステー上に、金めっきバンプが形成された半導体ウエハ(6インチ径、厚さ725μm)をバンプ側を上に向けて載せた。回路部材接続用接着剤シートを200mm×200mmに切断し保護フィルムである第一のフィルムを除いた接着剤層を半導体ウエハのバンプ側に向け、エアを巻き込まないように半導体ウエハの端からダイアタッチマウンターの貼付ローラで押しつけてラミネートした。ラミネート後、ウエハの外形に沿って接着剤のはみ出し部分を切断した。
上記回路部材接続用接着剤シートと半導体ウエハ(厚み625μm)との積層体を、株式会社ディスコ製バックグラインド装置で、厚みが150μmとなるまで半導体ウエハの裏面をバックグラインドした後、バックグラインドした半導体ウエハを上に向けた状態でジェイシーエム製のダイアタッチフィルムマウンターの吸着ステージに設置し、室温にてダイシングフレームと同時にアデカ製ダイシングテープ「AD80H」を貼り付けた。次いで、支持基材上に日東電工製バックグラインドテープ剥離テープを貼付し、180度ピール引き剥がしで支持基材のみを引き剥がした。
上述のダイシングフレームに固定された接着剤層付き半導体ウエハを株式会社ディスコ製フルオートマチックダイシングソー「DFD6361」にて10mm×10mmにダイシングした。ダイシング後、洗浄し、水分を飛ばした後、ダイシングテープ側からUV照射を行った後、個片化された接着剤付き半導体チップをピックアップした。
接着剤付き半導体チップを、バンプに対向する位置にSnAgCuを構成成分とするハンダが形成された回路を有するガラエポ基板に、松下電気産業製フリップチップボンダ「FCB3」で位置あわせを行った後、250℃、0.5MPaで10秒間熱圧着し、半導体装置を得た。
作製した半導体装置について、圧着後の接続抵抗及びリフロー後の接続抵抗を、デジタルマルチメータ(アドバンテスト社製、商品名)を用いて測定し、下記の基準に基づいて評価した。結果を表1及び表2に示す。
a:試験に適用した実装TEGの全端子連結での接続抵抗が得られる。
b:断線不良端子が存在する。
接着剤層の貼付状態を日立建機製超音波探傷装置(SAT)で視察し、下記の基準に基づいて評価した。結果を表1及び表2に示す。
a:剥離、ボイドが観察されない。
b:剥離、ボイドが観察される。
接着剤層のリフロー後の接続状態を日立建機製超音波探傷装置(SAT)で視察し、下記の基準に基づいて評価した。結果を表1及び表2に示す。
a:剥離が観察されない。
b:剥離が観察される。
Claims (7)
- (A)熱可塑性樹脂と、
(B)熱硬化性樹脂と、
(C)潜在性硬化剤と、
(D)無機フィラーと、
(E)有機微粒子と、
を含む、接着剤組成物。 - 前記(A)熱可塑性樹脂、前記(B)熱硬化性樹脂及び前記(C)潜在性硬化剤の総含有量100質量部に対して、
前記(D)無機フィラーの含有量が50〜150質量部であり、
前記(E)有機微粒子の含有量が5〜30質量部であり、且つ、
前記(D)無機フィラー及び前記(E)有機微粒子の含有量の合計が65〜165質量部である、請求項1に記載の接着剤組成物。 - 相対向する回路部材間に介在させ、前記回路部材同士を接着するために用いられる、請求項1又は2に記載の接着剤組成物。
- 支持基材と、該支持基材上に設けられ、請求項1〜3のいずれか一項に記載の接着剤組成物からなる接着剤層と、を備える、接着剤シート。
- 前記支持基材が、プラスチックフィルムと該プラスチックフィルム上に設けられた粘着剤層とを備え、前記接着剤層が前記粘着剤層上に設けられている、請求項4に記載の接着剤シート。
- 相対向する回路部材間に介在させ、前記回路部材同士を接着するために用いられる、請求項4又は5に記載の接着剤シート。
- 主面の一方に複数の回路電極を有する半導体ウエハを準備し、該半導体ウエハの前記回路電極が設けられている側に、請求項1〜3のいずれか一項に記載の接着剤組成物からなる接着剤層を設ける工程と、
前記半導体ウエハの前記回路電極が設けられている側とは反対側を研削して前記半導体ウエハを薄化する工程と、
前記薄化した半導体ウエハ及び前記接着剤層をダイシングしてフィルム状接着剤付半導体素子に個片化する工程と、
前記フィルム状接着剤付半導体素子の前記回路電極を半導体素子搭載用支持部材の回路電極に接合する工程と、
を備える、半導体装置の製造方法。
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---|---|---|---|---|
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JP5802400B2 (ja) * | 2011-02-14 | 2015-10-28 | 日東電工株式会社 | 封止用樹脂シートおよびそれを用いた半導体装置、並びにその半導体装置の製法 |
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WO2017078055A1 (ja) * | 2015-11-04 | 2017-05-11 | リンテック株式会社 | 硬化性樹脂フィルム及び第1保護膜形成用シート |
Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1161088A (ja) * | 1997-08-25 | 1999-03-05 | Hitachi Chem Co Ltd | 回路部材接続用接着剤 |
JP2000086988A (ja) * | 1998-09-11 | 2000-03-28 | Hitachi Chem Co Ltd | 回路接続用接着剤の製造法 |
WO2001060938A1 (en) * | 2000-02-15 | 2001-08-23 | Hitachi Chemical Co., Ltd. | Adhesive composition, process for producing the same, adhesive film made with the same, substrate for semiconductor mounting, and semiconductor device |
JP2001303014A (ja) * | 2000-04-25 | 2001-10-31 | Hitachi Chem Co Ltd | 接着フィルム及びそれを用いた接着方法 |
JP2001303015A (ja) * | 2000-04-25 | 2001-10-31 | Hitachi Chem Co Ltd | 接着フィルム、その製造方法及び接着方法 |
JP2005089629A (ja) * | 2003-09-18 | 2005-04-07 | Ricoh Co Ltd | 導電性接着剤 |
JP2005194413A (ja) * | 2004-01-08 | 2005-07-21 | Hitachi Chem Co Ltd | 回路接続用接着フィルム及び回路接続構造体 |
JP2006049482A (ja) * | 2004-08-03 | 2006-02-16 | Furukawa Electric Co Ltd:The | 半導体装置製造方法およびウエハ加工用テープ |
JP2006206843A (ja) * | 2005-01-31 | 2006-08-10 | Hitachi Chem Co Ltd | 接着フィルム及びこれを備える積層体 |
JP2007169448A (ja) * | 2005-12-21 | 2007-07-05 | Sekisui Chem Co Ltd | 熱硬化性樹脂組成物及び半導体装置 |
JP2008111106A (ja) * | 2006-10-06 | 2008-05-15 | Hitachi Chem Co Ltd | 電子部品封止用液状樹脂組成物及びこれを用いた電子部品装置 |
JP2008150597A (ja) * | 2006-11-22 | 2008-07-03 | Hitachi Chem Co Ltd | 導電性接着剤組成物、電子部品搭載基板及び半導体装置 |
JP2008260908A (ja) * | 2007-03-16 | 2008-10-30 | Hitachi Chem Co Ltd | 光導波路用接着剤組成物およびこれを用いた光導波路用接着フィルム、ならびにこれらを用いた光学装置 |
WO2009020005A1 (ja) * | 2007-08-08 | 2009-02-12 | Hitachi Chemical Company, Ltd. | 接着剤組成物、フィルム状接着剤及び回路部材の接続構造 |
WO2009051067A1 (ja) * | 2007-10-18 | 2009-04-23 | Hitachi Chemical Company, Ltd. | 接着剤組成物及びこれを用いた回路接続材料、並びに、回路部材の接続方法及び回路接続体 |
-
2010
- 2010-04-27 JP JP2010102493A patent/JP5569126B2/ja active Active
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Patent Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1161088A (ja) * | 1997-08-25 | 1999-03-05 | Hitachi Chem Co Ltd | 回路部材接続用接着剤 |
JP2000086988A (ja) * | 1998-09-11 | 2000-03-28 | Hitachi Chem Co Ltd | 回路接続用接着剤の製造法 |
WO2001060938A1 (en) * | 2000-02-15 | 2001-08-23 | Hitachi Chemical Co., Ltd. | Adhesive composition, process for producing the same, adhesive film made with the same, substrate for semiconductor mounting, and semiconductor device |
JP2001303014A (ja) * | 2000-04-25 | 2001-10-31 | Hitachi Chem Co Ltd | 接着フィルム及びそれを用いた接着方法 |
JP2001303015A (ja) * | 2000-04-25 | 2001-10-31 | Hitachi Chem Co Ltd | 接着フィルム、その製造方法及び接着方法 |
JP2005089629A (ja) * | 2003-09-18 | 2005-04-07 | Ricoh Co Ltd | 導電性接着剤 |
JP2005194413A (ja) * | 2004-01-08 | 2005-07-21 | Hitachi Chem Co Ltd | 回路接続用接着フィルム及び回路接続構造体 |
JP2006049482A (ja) * | 2004-08-03 | 2006-02-16 | Furukawa Electric Co Ltd:The | 半導体装置製造方法およびウエハ加工用テープ |
JP2006206843A (ja) * | 2005-01-31 | 2006-08-10 | Hitachi Chem Co Ltd | 接着フィルム及びこれを備える積層体 |
JP2007169448A (ja) * | 2005-12-21 | 2007-07-05 | Sekisui Chem Co Ltd | 熱硬化性樹脂組成物及び半導体装置 |
JP2008111106A (ja) * | 2006-10-06 | 2008-05-15 | Hitachi Chem Co Ltd | 電子部品封止用液状樹脂組成物及びこれを用いた電子部品装置 |
JP2008150597A (ja) * | 2006-11-22 | 2008-07-03 | Hitachi Chem Co Ltd | 導電性接着剤組成物、電子部品搭載基板及び半導体装置 |
JP2008260908A (ja) * | 2007-03-16 | 2008-10-30 | Hitachi Chem Co Ltd | 光導波路用接着剤組成物およびこれを用いた光導波路用接着フィルム、ならびにこれらを用いた光学装置 |
WO2009020005A1 (ja) * | 2007-08-08 | 2009-02-12 | Hitachi Chemical Company, Ltd. | 接着剤組成物、フィルム状接着剤及び回路部材の接続構造 |
WO2009051067A1 (ja) * | 2007-10-18 | 2009-04-23 | Hitachi Chemical Company, Ltd. | 接着剤組成物及びこれを用いた回路接続材料、並びに、回路部材の接続方法及び回路接続体 |
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JP5569126B2 (ja) | 2014-08-13 |
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