JP3971433B2 - 半導体集積回路装置の製造方法及び半導体集積回路装置 - Google Patents
半導体集積回路装置の製造方法及び半導体集積回路装置 Download PDFInfo
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- JP3971433B2 JP3971433B2 JP2005260073A JP2005260073A JP3971433B2 JP 3971433 B2 JP3971433 B2 JP 3971433B2 JP 2005260073 A JP2005260073 A JP 2005260073A JP 2005260073 A JP2005260073 A JP 2005260073A JP 3971433 B2 JP3971433 B2 JP 3971433B2
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Description
(a)集積回路と複数のボンディングパッドとが形成された主面を有する半導体チップを準備する工程と、
(b)前記半導体チップの周縁部よりも内側に位置し、この面の上側に前記半導体チップを搭載可能なダイパッドと、前記ダイパッドと一体に形成され、前記ダイパッドを支持する複数の吊りリードと、前記ダイパッドを囲むように配置され、前記複数の吊りリード間に配置された複数のインナーリードと、前記インナーリードと一体に形成された複数のアウターリードを有するリードフレームであって、前記ダイパッド周辺と向い合う複数のインナーリードの先端が前記ダイパットの上側に位置するように前記複数の吊りリードの各々の所定個所に折り曲げ加工が施されたリードフレームを準備する工程と、
(c)前記半導体チップを前記ダイパッド上に搭載する工程と、
(d)前記半導体チップの複数のボンディングパッドと前記複数のインナーリードの先端部をそれぞれ複数のワイヤにより接続する工程と、
(e)前記半導体チップが搭載されたリードフレームをモールド金型に装着し、前記半導体チップ、前記ダイパッド、前記複数のインナーリードおよび前記複数のワイヤを樹脂によりモールドする工程と、
を有し、
前記折り曲げ加工が施された部分は、前記吊りリードと隣り合うインナーリードの先端よりも前記半導体チップから離して設けられ、
前記折り曲げ加工は、前記半導体チップの上面側と前記ダイパッドの下面側とで樹脂の肉厚がほぼ等しくなるように設定されていることを特徴とするものである。
(a)その主面に集積回路と複数のボンディングパッドを有する半導体チップを準備する工程と、
(b)前記半導体チップを搭載可能であり、かつ、前記半導体チップより小径のダイパッドと、前記ダイパッドと一体に形成され、前記ダイパッドを支持する複数の吊リードと、前記ダイパッドを囲むように配置され、前記複数の吊リード間に配置された複数のインナーリードと、前記インナーリードと一体に形成された複数のアウターリードを有するリードフレームであって、前記複数のインナーリードの先端より下側に前記ダイパットが位置するように、前記複数の吊リードの各々の所定個所にダウンセット加工が施されたリードフレームを準備する工程と、
(c)前記半導体チップを前記ダイパッド上に搭載する工程と、
(d)前記半導体チップの複数のボンディングパッドと前記複数のインナーリードの先端部をワイヤにより接続する工程と、
(e)前記半導体チップが搭載されたリードフレームをモールド金型に装着し、前記半導体チップ、前記ダイパッド、複数のインナーリード及びワイヤを樹脂によりモールドする工程と、を有し、
前記ダウンセット加工は、前記工程(e)における樹脂によるモールド時に、溶融樹脂の流速が前記半導体チップの上下面においてほぼ等しくなるように設定されていることを特徴とする。
(a)その主面に集積回路と複数のボンディングパッドを有する半導体チップを準備する工程と、
(b)前記半導体チップを搭載可能であり、かつ、前記半導体チップより小径のダイパッドと、前記ダイパッドと一体に形成され、前記ダイパッドを支持する複数の吊リードと、前記ダイパッドを囲むように配置され、前記複数の吊リード間に配置された複数のインナーリードと、前記インナーリードと一体に形成された複数のアウターリードを有するリードフレームであって、前記複数のインナーリードの先端より下側に前記ダイパットが位置するように、前記複数の吊リードの各々の所定個所にダウンセット加工が施されたリードフレームを準備する工程と、
(c)前記半導体チップを前記ダイパッド上に搭載する工程と、
(d)前記半導体チップの複数のボンディングパッドと前記複数のインナーリードの先端部をワイヤにより接続する工程と、
(e)前記半導体チップが搭載されたリードフレームをモールド金型に装着し、前記半導体チップ、前記ダイパッド、複数のインナーリード及びワイヤを樹脂によりモールドする工程と、を有し、
前記ダウンセット加工は、前記ダイパッドのチップ搭載面側が、前記インナーリードの先端部のワイヤ接続面より下側に位置するように設定されていることを特徴とする。
(1).本発明によれば、リフロー・クラック耐性の向上したLSIパッケージを提供することができる。
(2).本発明によれば、LSIパッケージの少量多品種化に対応したリードフレームを提供することができるので、LSIパッケージの製造コストを低減することができる。
1a リードフレーム
1b リードフレーム
2 半導体チップ
2b 半導体チップ
3 ダイパッド(チップ搭載部)
4 吊りリード
5 リード
5a インナーリード部
5b アウターリード部
6 テープ
6a フィルム
6b 接着剤
7 ダムバー
8 外枠
9 内枠
10 ガイド孔
11 バリ
12 プレス型
13 ヒートステージ
14 ツール
15 接着剤
16 ステージ
17 ディスペンサ
18 ノズル
19 シリンジ
20 小パッド
21 コレット
22 V溝
23 突起
24 ヒートステージ
25 ボンディングパッド
26 ワイヤ
27 ヒートステージ
28 逃げ溝
29 パッケージ本体
30 表面実装型半導体集積回路装置(QFP)
31 貫通孔
32 ワイヤボンディング領域(Agメッキ部)
33 ランドパッド
34 配線基板
36 半田
Claims (31)
- (a)集積回路と複数のボンディングパッドとが形成された主面を有する半導体チップを準備する工程と、
(b)前記半導体チップの周縁部よりも内側に位置し、この面の上側に前記半導体チップを搭載可能なダイパッドと、前記ダイパッドと一体に形成され、前記ダイパッドを支持する複数の吊りリードと、前記ダイパッドを囲むように配置され、前記複数の吊りリード間に配置された複数のインナーリードと、前記インナーリードと一体に形成された複数のアウターリードを有するリードフレームであって、前記ダイパッド周辺と向い合う複数のインナーリードの先端が前記ダイパットの上側に位置するように前記複数の吊りリードの各々の所定個所に折り曲げ加工が施されたリードフレームを準備する工程と、
(c)前記半導体チップを前記ダイパッド上に搭載する工程と、
(d)前記半導体チップの複数のボンディングパッドと前記複数のインナーリードの先端部をそれぞれ複数のワイヤにより接続する工程と、
(e)前記半導体チップが搭載されたリードフレームをモールド金型に装着し、前記半導体チップ、前記ダイパッド、前記複数のインナーリード及び前記複数のワイヤを樹脂によりモールドする工程と、
を有し、
前記折り曲げ加工が施された部分は、前記吊りリードと隣り合うインナーリードの先端よりも前記半導体チップから離して設けられ、
前記折り曲げ加工は、前記半導体チップの上面側と前記ダイパッドの下面側とで樹脂の肉厚がほぼ等しくなるように設定されていることを特徴とする半導体集積回路装置の製造方法。 - 請求項1において、前記工程(b)と(c)との間に、前記複数の吊りリードと前記複数のインナーリードの表面に、前記複数の吊りリードと前記複数のインナーリード間において連続した絶縁性フィルムを接着する工程を有することを特徴とする半導体集積回路装置の製造方法。
- 請求項2において、前記絶縁性フィルムは、前記折り曲げ加工が施された位置より外周側に接着されていることを特徴とする半導体集積回路装置の製造方法。
- 請求項3において、前記絶縁性フィルムは、前記工程(e)において、溶融樹脂の流動による前記ダイパッドの変動を防止するために接着されていることを特徴とする半導体集積回路装置の製造方法。
- 請求項1において、前記折り曲げ加工の量は、0.2mm程度であることを特徴とする半導体集積回路装置の製造方法。
- 請求項5において、前記リードフレームの厚さは、0.15mm程度であることを特徴とする半導体集積回路装置の製造方法。
- (a) 四角形の平面形状から成り、集積回路と複数のボンディングパッドとが形成された主面を有する半導体チップを準備する工程と、
(b) 前記半導体チップの前記主面の周縁部よりも内側に位置し、前記半導体チップが搭載される側の面である搭載面を有するダイパッドと、前記搭載面と並ぶように設けられたリード主面、前記リード主面と反対側のリード裏面、前記ダイパッドの周りのインナー部、前記インナー部よりも前記ダイパッドから遠い位置のアウター部をそれぞれ有する複数のリードと、前記ダイパッドと繋がる一端部、前記一端部よりも前記ダイパッドから遠い位置に配置された他端部、前記一端部と前記他端部との間に位置し、前記搭載面を前記リード主面よりも前記リード裏面側に位置させるように折り曲げたオフセット部を有する吊りリードと、前記各リードの前記アウター部を繋ぐ枠部とを含むリードフレームを準備する工程と、
(c) 前記半導体チップを前記ダイパッドの搭載面上に搭載する工程と、
(d) 前記各ボンディングパッドと前記各リードのインナー部とを複数のワイヤによりそれぞれ接続する工程と、
(e) 前記半導体チップが搭載されたリードフレームをモールド金型に装着し、前記半導体チップ、前記ダイパッド、前記リードのインナー部、および前記複数のワイヤを樹脂によりモールドする工程と、
を有し、
前記オフセット部は、前記吊りリードと隣り合うインナーリードの先端よりも前記半導体チップから距離を置いて形成され、
前記オフセット部は、前記半導体チップの上面側と前記ダイパッドの下面側とで樹脂の肉厚がほぼ等しくなるように設定されていることを特徴とする半導体集積回路装置の製造方法。 - 請求項7に記載の半導体集積回路装置の製造方法において、前記吊りリードは、第1の幅で形成された第1幅広部と、前記半導体チップと前記吊りリードの前記他端部との間に形成され、前記第1幅広部の幅よりも太い第2の幅で形成された第2幅広部を有し、この第2幅広部には、絶縁性フィルムが接着されることを特徴とする半導体集積回路装置の製造方法。
- 請求項8に記載の半導体集積回路装置の製造方法において、前記オフセット部は、前記半導体チップと前記吊りリードの前記第2幅広部との間に形成されていることを特徴とする半導体集積回路装置の製造方法。
- 請求項7に記載の半導体集積回路装置の製造方法において、前記工程(b)と(c)との間に、前記リード主面と並ぶように設けられた前記吊りリードの吊りリード主面と前記リード主面に連続した絶縁性フィルムを接着する工程を有することを特徴とする半導体集積回路装置の製造方法。
- 請求項10に記載の半導体集積回路装置の製造方法において、前記オフセット部は、前記半導体チップと前記絶縁性フィルムとの間に形成されていることを特徴とする半導体集積回路装置の製造方法。
- 請求項11に記載の半導体集積回路装置の製造方法において、前記絶縁性フィルムは、前記(e)工程において、溶融樹脂の流動による前記ダイパッドの変動を防止するために接着されていることを特徴とする半導体集積回路装置の製造方法。
- 請求項7に記載の半導体集積回路装置の製造方法において、前記吊りリードは、前記ダイパッドの搭載面上に搭載された前記半導体チップの角部と平面的に重なる領域を通過するように、前記吊りリードの前記一端部から前記吊りリードの前記他端部に向かって延在していることを特徴とする半導体集積回路装置の製造方法。
- 請求項13に記載の半導体集積回路装置の製造方法において、前記オフセット部は、前記吊りリードの前記他端部と前記ダイパッドの搭載面上に搭載された前記半導体チップの角部のうち前記吊りリードの前記他端部に最も近い角部との間に形成されていることを特徴とする半導体集積回路装置の製造方法。
- 請求項7に記載の半導体集積回路装置の製造方法において、前記(e)工程により、四角形の平面形状から成る封止体が形成されることを特徴とする半導体集積回路装置の製造方法。
- 請求項15に記載の半導体集積回路装置の製造方法において、前記封止体の各辺は、前記半導体チップの各辺と並んで配置されていることを特徴とする半導体集積回路装置の製造方法。
- 請求項16に記載の半導体集積回路装置の製造方法において、前記吊りリードは、前記半導体チップの角部のうちの第1角部から、前記封止体の角部のうちの前記第1角部と最も近い第2角部に向かって延在していることを特徴とする半導体集積回路装置の製造方法。
- 請求項7に記載の半導体集積回路装置の製造方法において、さらに、(f)前記リードフレームの枠部から前記リードの前記アウター部を切断する工程を有することを特徴とする半導体集積回路装置の製造方法。
- 請求項18に記載の半導体集積回路装置の製造方法において、前記ダイパッドは、前記搭載面と反対側のダイパッド裏面を有し、前記(e)工程により形成された封止体から露出する前記リードのアウター部は、前記リード主面が前記ダイパッドの搭載面よりも前記ダイパッド裏面側に位置するように折り曲げられていることを特徴とする半導体集積回路装置の製造方法。
- 集積回路と複数のボンディングパッドとが形成された主面を有する半導体チップと、
前記半導体チップの周縁部よりも内側に位置する面であり、この面の上側に前記半導体チップを搭載可能なダイパッドと、
前記ダイパッドと一体に形成され、前記ダイパッドを支持する複数の吊りリードと、
前記ダイパッドを囲むように配置され、前記複数の吊りリード間に配置された複数のインナーリードと、
前記インナーリードと一体に形成された複数のアウターリードと、
前記半導体チップの複数のボンディングパッドと前記複数のインナーリードの先端部をそれぞれ接続する複数のワイヤと、
前記半導体チップ、前記ダイパッド、前記複数のインナーリードおよび前記複数のワイヤを封止する樹脂体と、
を有し、
前記複数の吊りリードの各々は、前記ダイパッド周辺と向い合う複数のインナーリードの先端が前記ダイパットの上側に位置するように折り曲げ加工が施され、
前記折り曲げ加工が施された部分は、前記吊りリードと隣り合うインナーリードの先端よりも前記半導体チップから離して設けられ、
前記折り曲げ加工は、前記半導体チップの上面側と前記ダイパッドの下面側とで樹脂の肉厚がほぼ等しくなるように設定されていることを特徴とする半導体集積回路装置。 - 請求項20において、前記複数の吊りリードと前記複数のインナーリードの表面には、前記複数の吊りリードと前記複数のインナーリード間において連続した絶縁性フィルムが接着されていることを特徴とする半導体集積回路装置。
- 請求項21において、前記絶縁性フィルムは、前記折り曲げ加工が施された位置より外周側に接着されていることを特徴とする半導体集積回路装置。
- 請求項22において、前記絶縁性フィルムは、溶融樹脂の流動による前記ダイパッドの変動を防止するために接着されていることを特徴とする半導体集積回路装置。
- 請求項20において、前記折り曲げ加工の量は、0.2mm程度であることを特徴とする半導体集積回路装置。
- 請求項24において、前記リードフレームの厚さは、0.15mm程度であることを特徴とする半導体集積回路装置。
- 集積回路と複数のボンディングパッドとが形成された主面を有する半導体チップと、
前記半導体チップの周縁部よりも内側に位置するチップ搭載面を有するダイパッドと、
前記ダイパッドと一体に形成された吊りリードと、
前記ダイパッドを囲むように配置され、前記チップ搭載面側に位置する第1の面と、前記第1の面に対向する第2の面とを有する複数のインナーリードと、
前記インナーリードと一体に形成された複数のアウターリードと、
前記複数のボンディングパッドと前記複数のインナーリード先端の前記第1の面に接続された複数のワイヤと、
前記半導体チップ、前記ダイパッド、前記複数のインナーリードおよび前記複数のワイヤを封止する樹脂体と、
を有し、
前記吊りリードは、前記複数のインナーリード間を前記封止体の外部に向かって延在し、前記ダイパットのチップ搭載面が前記インナーリード先端の第1の面よりも前記第2の面側に位置するように折り曲げ加工が施されたオフセット部を有し、
前記オフセット部は、前記吊りリードと隣り合うインナーリードの先端よりも前記半導体チップから離して設けられ、前記複数のインナーリード間に位置し、
前記オフセット部は、前記半導体チップの上面側と前記ダイパッドの下面側とで樹脂の肉厚がほぼ等しくなるように設定されていることを特徴とする半導体集積回路装置。 - 請求項26において、前記複数の吊りリードと前記複数のインナーリードの表面には、前記複数の吊りリードと前記複数のインナーリード間において連続した絶縁性フィルムが接着されていることを特徴とする半導体集積回路装置。
- 請求項27において、前記絶縁性フィルムは、前記折り曲げ加工が施された前記オフセット部の位置より外周側に形成されていることを特徴とする半導体集積回路装置。
- 請求項28において、前記絶縁性フィルムは、溶融樹脂の流動による前記ダイパッドの変動を防止するために接着されていることを特徴とする半導体集積回路装置。
- 請求項26において、前記折り曲げ加工の量は、0.2mm程度であることを特徴とする半導体集積回路装置。
- 請求項30において、前記リードフレームの厚さは、0.15mm程度であることを特徴とする半導体集積回路装置。
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101866903B (zh) * | 2009-04-20 | 2013-01-02 | 日月光半导体制造股份有限公司 | 开窗型球栅数组封装结构 |
CN101894761B (zh) * | 2009-05-21 | 2012-07-18 | 日月光半导体制造股份有限公司 | 开窗型球栅阵列封装结构的基板及其制造方法 |
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