KR20080097247A - 포지티브형 레지스트 조성물 및 레지스트 패턴 형성 방법 - Google Patents
포지티브형 레지스트 조성물 및 레지스트 패턴 형성 방법 Download PDFInfo
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- KR20080097247A KR20080097247A KR1020087025312A KR20087025312A KR20080097247A KR 20080097247 A KR20080097247 A KR 20080097247A KR 1020087025312 A KR1020087025312 A KR 1020087025312A KR 20087025312 A KR20087025312 A KR 20087025312A KR 20080097247 A KR20080097247 A KR 20080097247A
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- dissolution inhibiting
- resist composition
- acid dissociable
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- 238000000034 method Methods 0.000 title claims description 48
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- 125000000217 alkyl group Chemical group 0.000 claims description 121
- 238000004090 dissolution Methods 0.000 claims description 98
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- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 86
- 229920000642 polymer Polymers 0.000 claims description 84
- 125000003118 aryl group Chemical group 0.000 claims description 46
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- 239000000758 substrate Substances 0.000 claims description 40
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 38
- 125000001931 aliphatic group Chemical group 0.000 claims description 29
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- 125000003367 polycyclic group Chemical group 0.000 claims description 15
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
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- 125000006527 (C1-C5) alkyl group Chemical group 0.000 description 7
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- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 5
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- 150000003512 tertiary amines Chemical class 0.000 description 5
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 4
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- 238000007796 conventional method Methods 0.000 description 4
- 125000004093 cyano group Chemical group *C#N 0.000 description 4
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 4
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- 238000005227 gel permeation chromatography Methods 0.000 description 4
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 4
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- 125000000008 (C1-C10) alkyl group Chemical group 0.000 description 3
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- YXHKONLOYHBTNS-UHFFFAOYSA-N Diazomethane Chemical class C=[N+]=[N-] YXHKONLOYHBTNS-UHFFFAOYSA-N 0.000 description 3
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- 125000001622 2-naphthyl group Chemical group [H]C1=C([H])C([H])=C2C([H])=C(*)C([H])=C([H])C2=C1[H] 0.000 description 2
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- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 2
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- 125000002868 norbornyl group Chemical group C12(CCC(CC1)C2)* 0.000 description 2
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- VISTUMYXGYLTFC-UHFFFAOYSA-N (1-cyanobutylideneamino) propane-1-sulfonate Chemical compound CCCC(C#N)=NOS(=O)(=O)CCC VISTUMYXGYLTFC-UHFFFAOYSA-N 0.000 description 1
- YQCKLEXBDDKTRB-UHFFFAOYSA-N (1-cyanopropylideneamino) ethanesulfonate Chemical compound CCC(C#N)=NOS(=O)(=O)CC YQCKLEXBDDKTRB-UHFFFAOYSA-N 0.000 description 1
- XLQMBODNBLKPIP-UHFFFAOYSA-O (4-hydroxynaphthalen-1-yl)-dimethylsulfanium Chemical compound C1=CC=C2C([S+](C)C)=CC=C(O)C2=C1 XLQMBODNBLKPIP-UHFFFAOYSA-O 0.000 description 1
- CVBASHMCALKFME-UHFFFAOYSA-N (4-methoxyphenyl)-diphenylsulfanium Chemical compound C1=CC(OC)=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 CVBASHMCALKFME-UHFFFAOYSA-N 0.000 description 1
- RCOCMILJXXUEHU-UHFFFAOYSA-N (4-methylphenyl)-diphenylsulfanium Chemical compound C1=CC(C)=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 RCOCMILJXXUEHU-UHFFFAOYSA-N 0.000 description 1
- 125000004178 (C1-C4) alkyl group Chemical group 0.000 description 1
- 125000004209 (C1-C8) alkyl group Chemical group 0.000 description 1
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- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- GEYOCULIXLDCMW-UHFFFAOYSA-N 1,2-phenylenediamine Chemical compound NC1=CC=CC=C1N GEYOCULIXLDCMW-UHFFFAOYSA-N 0.000 description 1
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- GYQQFWWMZYBCIB-UHFFFAOYSA-N 1-[diazo-(4-methylphenyl)sulfonylmethyl]sulfonyl-4-methylbenzene Chemical compound C1=CC(C)=CC=C1S(=O)(=O)C(=[N+]=[N-])S(=O)(=O)C1=CC=C(C)C=C1 GYQQFWWMZYBCIB-UHFFFAOYSA-N 0.000 description 1
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 1
- BMVXCPBXGZKUPN-UHFFFAOYSA-N 1-hexanamine Chemical compound CCCCCCN BMVXCPBXGZKUPN-UHFFFAOYSA-N 0.000 description 1
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- AFVFQIVMOAPDHO-UHFFFAOYSA-M methanesulfonate group Chemical group CS(=O)(=O)[O-] AFVFQIVMOAPDHO-UHFFFAOYSA-M 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- BDJSOPWXYLFTNW-UHFFFAOYSA-N methyl 3-methoxypropanoate Chemical compound COCCC(=O)OC BDJSOPWXYLFTNW-UHFFFAOYSA-N 0.000 description 1
- 229940057867 methyl lactate Drugs 0.000 description 1
- CWKLZLBVOJRSOM-UHFFFAOYSA-N methyl pyruvate Chemical compound COC(=O)C(C)=O CWKLZLBVOJRSOM-UHFFFAOYSA-N 0.000 description 1
- COFKFSSWMQHKMD-UHFFFAOYSA-N n,n-didecyldecan-1-amine Chemical compound CCCCCCCCCCN(CCCCCCCCCC)CCCCCCCCCC COFKFSSWMQHKMD-UHFFFAOYSA-N 0.000 description 1
- CLZGJKHEVKJLLS-UHFFFAOYSA-N n,n-diheptylheptan-1-amine Chemical compound CCCCCCCN(CCCCCCC)CCCCCCC CLZGJKHEVKJLLS-UHFFFAOYSA-N 0.000 description 1
- DIAIBWNEUYXDNL-UHFFFAOYSA-N n,n-dihexylhexan-1-amine Chemical compound CCCCCCN(CCCCCC)CCCCCC DIAIBWNEUYXDNL-UHFFFAOYSA-N 0.000 description 1
- OOHAUGDGCWURIT-UHFFFAOYSA-N n,n-dipentylpentan-1-amine Chemical compound CCCCCN(CCCCC)CCCCC OOHAUGDGCWURIT-UHFFFAOYSA-N 0.000 description 1
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- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- NTNWKDHZTDQSST-UHFFFAOYSA-N naphthalene-1,2-diamine Chemical compound C1=CC=CC2=C(N)C(N)=CC=C21 NTNWKDHZTDQSST-UHFFFAOYSA-N 0.000 description 1
- 125000004998 naphthylethyl group Chemical group C1(=CC=CC2=CC=CC=C12)CC* 0.000 description 1
- 125000004923 naphthylmethyl group Chemical group C1(=CC=CC2=CC=CC=C12)C* 0.000 description 1
- IZJVVXCHJIQVOL-UHFFFAOYSA-N nitro(phenyl)methanesulfonic acid Chemical compound OS(=O)(=O)C([N+]([O-])=O)C1=CC=CC=C1 IZJVVXCHJIQVOL-UHFFFAOYSA-N 0.000 description 1
- FJDUDHYHRVPMJZ-UHFFFAOYSA-N nonan-1-amine Chemical compound CCCCCCCCCN FJDUDHYHRVPMJZ-UHFFFAOYSA-N 0.000 description 1
- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- IOQPZZOEVPZRBK-UHFFFAOYSA-N octan-1-amine Chemical compound CCCCCCCCN IOQPZZOEVPZRBK-UHFFFAOYSA-N 0.000 description 1
- WLGDAKIJYPIYLR-UHFFFAOYSA-N octane-1-sulfonic acid Chemical group CCCCCCCCS(O)(=O)=O WLGDAKIJYPIYLR-UHFFFAOYSA-N 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- CDXVUROVRIFQMV-UHFFFAOYSA-N oxo(diphenoxy)phosphanium Chemical compound C=1C=CC=CC=1O[P+](=O)OC1=CC=CC=C1 CDXVUROVRIFQMV-UHFFFAOYSA-N 0.000 description 1
- RQKYHDHLEMEVDR-UHFFFAOYSA-N oxo-bis(phenylmethoxy)phosphanium Chemical compound C=1C=CC=CC=1CO[P+](=O)OCC1=CC=CC=C1 RQKYHDHLEMEVDR-UHFFFAOYSA-N 0.000 description 1
- 125000005010 perfluoroalkyl group Chemical group 0.000 description 1
- 125000005561 phenanthryl group Chemical group 0.000 description 1
- 229940117803 phenethylamine Drugs 0.000 description 1
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 1
- 125000000286 phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])* 0.000 description 1
- MLCHBQKMVKNBOV-UHFFFAOYSA-N phenylphosphinic acid Chemical compound OP(=O)C1=CC=CC=C1 MLCHBQKMVKNBOV-UHFFFAOYSA-N 0.000 description 1
- RMVRSNDYEFQCLF-UHFFFAOYSA-O phenylsulfanium Chemical compound [SH2+]C1=CC=CC=C1 RMVRSNDYEFQCLF-UHFFFAOYSA-O 0.000 description 1
- 125000003170 phenylsulfonyl group Chemical group C1(=CC=CC=C1)S(=O)(=O)* 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 1
- 150000003009 phosphonic acids Chemical class 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- KCXFHTAICRTXLI-UHFFFAOYSA-N propane-1-sulfonic acid Chemical group CCCS(O)(=O)=O KCXFHTAICRTXLI-UHFFFAOYSA-N 0.000 description 1
- LVTJOONKWUXEFR-FZRMHRINSA-N protoneodioscin Natural products O(C[C@@H](CC[C@]1(O)[C@H](C)[C@@H]2[C@]3(C)[C@H]([C@H]4[C@@H]([C@]5(C)C(=CC4)C[C@@H](O[C@@H]4[C@H](O[C@H]6[C@@H](O)[C@@H](O)[C@@H](O)[C@H](C)O6)[C@@H](O)[C@H](O[C@H]6[C@@H](O)[C@@H](O)[C@@H](O)[C@H](C)O6)[C@H](CO)O4)CC5)CC3)C[C@@H]2O1)C)[C@H]1[C@H](O)[C@H](O)[C@H](O)[C@@H](CO)O1 LVTJOONKWUXEFR-FZRMHRINSA-N 0.000 description 1
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- 150000003510 tertiary aliphatic amines Chemical class 0.000 description 1
- 125000003718 tetrahydrofuranyl group Chemical group 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/10—Process efficiency
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/111—Polymer of unsaturated acid or ester
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
Claims (17)
- 알칼리 가용성의 구성 단위 (a1) 과, 산해리성 용해 억제기를 가지는 구성 단위 (a2) 를 가지고, 산의 작용에 의해 알칼리 가용성이 증대되는 수지 성분 (A) 와, 노광에 의해 산을 발생시키는 산발생제 성분 (B) 를 함유하는 포지티브형 레지스트 조성물로서,상기 수지 성분 (A) 에 있어서, 상기 구성 단위 (a1) 이, (α-메틸)히드록시스티렌으로부터 유도되는 구성 단위 (a11) 을 가지고, 상기 구성 단위 (a2) 가, 하기 일반식 (Ⅱ)[식 중, X 는 지방족 고리식기, 방향족 고리식 탄화수소기 또는 탄소수 1 ∼ 5 의 알킬기를 나타내고, R1 은 탄소수 1 ∼ 5 의 알킬기를 나타내고, 혹은 X 및 R1 이 각각 독립적으로 탄소수 1 ∼ 5 의 알킬렌기이고, X 의 말단과 R1 의 말단이 결합하고 있어도 되고, R2 는 탄소수 1 ∼ 5 의 알킬기 또는 수소 원자를 나타낸다] 로 나타내어지는 산해리성 용해 억제기 (Ⅱ) 및/또는 사슬형 제 3 급 알콕시카르보닐기, 사슬형 제 3 급 알킬기, 및 사슬형 제 3 급 알콕시카르보닐알킬기로 이루어지는 군에서 선택되는 적어도 1 종의 산해리성 용해 억제기 (Ⅲ) 을 가지고, 또한암모니아 NH3 의 수소 원자가, 전부 탄소수 1 ∼ 5 의 직쇄 또는 분기 알킬기의 수소 원자의 일부가 방향고리에 의해 치환된 기로 치환되어 이루어진 방향족 아민 (C) 를 함유하는 포지티브형 레지스트 조성물.
- 제 2 항에 있어서,상기 산해리성 용해 억제기 (Ⅲ) 가 사슬형 제 3 급 알콕시카르보닐기인 포지티브형 레지스트 조성물.
- 제 1 항에 있어서,상기 구성 단위 (a1) 이 추가로 알코올성 수산기를 가지는 (α-저급 알킬)아크릴산 에스테르로부터 유도되는 구성 단위 (a12) 를 가지는 포지티브형 레지스트 조성물.
- 제 4 항에 있어서,상기 구성 단위 (a12) 가 알코올성 수산기를 가지는 지방족 다환식기 함유 (α- 저급 알킬)아크릴산 에스테르로부터 유도되는 구성 단위인 포지티브형 레지스트 조성물.
- 제 1 항에 있어서,상기 구성 단위 (a2) 가 상기 구성 단위 (a11) 의 수산기의 수소 원자가 산해리성 용해 억제기로 치환되어 이루어지는 구성 단위 (a21) 을 포함하는 포지티브형 레지스트 조성물.
- 제 4 항에 있어서,상기 구성 단위 (a2) 가 상기 구성 단위 (a12) 의 알코올성 수산기의 수소 원자가 산해리성 용해 억제기로 치환되어 이루어지는 구성 단위 (a22) 를 포함하는 포지티브형 레지스트 조성물.
- 제 1 항에 있어서,상기 수지 성분 (A) 가 상기 구성 단위 (a11) 과, 알코올성 수산기를 가지는 (α-저급 알킬)아크릴산 에스테르로부터 유도되는 구성 단위 (a12) 와, 상기 구성 단위 (a11) 의 수산기의 수소 원자가 산해리성 용해 억제기로 치환되어 이루어지는 구성 단위 (a21), 상기 구성 단위 (a12) 의 알코올성 수산기의 수소 원자가 산해리성 용해 억제기로 치환되어 이루어지는 구성 단위 (a22), 또는 상기 구성 단위 (a21) 및 상기 구성 단위 (a22) 를 가지는 공중합체를 함유하는 포지티브형 레지스트 조성물.
- 제 1 항에 있어서,상기 수지 성분 (A) 가 상기 구성 단위 (a1) 과, 상기 구성 단위 (a2) 를 가지고, 또한 산해리성 용해 억제기로서 상기 산해리성 용해 억제기 (Ⅱ) 를 가지고, 또한 상기 산해리성 용해 억제기 (Ⅲ) 을 가지지 않는 중합체 (A1) 과, 상기 구성 단위 (a1) 과 상기 구성 단위 (a2) 를 가지고, 또한 산해리성 용해 억제기로서 상기 산해리성 용해 억제기 (Ⅲ) 을 가지고, 또한 상기 산해리성 용해 억제기 (Ⅱ) 를 가지지 않는 중합체 (A2) 를 함유하는 포지티브형 레지스트 조성물.
- 제 9 항에 있어서,상기 중합체 (A1) 과 상기 중합체 (A2) 의 함유량의 비 (질량비) 가 10 / 90 ∼ 90 / 10 의 범위 내인 포지티브형 레지스트 조성물.
- 제 9 항에 있어서,상기 중합체 (A1) 이 상기 구성 단위 (a11) 및 상기 구성 단위 (a11) 의 수 산기의 수소 원자가 산해리성 용해 억제기로 치환되어 이루어지는 구성 단위 (a21) 을 가지고, 또한 알코올성 수산기를 가지는 (α-저급 알킬)아크릴산 에스테르로부터 유도되는 구성 단위 (a12) 및 상기 구성 단위 (a12) 의 알코올성 수산기의 수소 원자가 산해리성 용해 억제기로 치환되어 이루어지는 구성 단위 (a22) 를 가지지 않는 중합체 (A11) 이고, 또한상기 중합체 (A2) 가 상기 구성 단위 (a11) 및 상기 구성 단위 (a21) 을 가지고, 또한 상기 구성 단위 (a12) 및 상기 구성 단위 (a22) 를 가지지 않는 중합체 (A21) 인 포지티브형 레지스트 조성물.
- 제 11 항에 있어서,상기 중합체 (A11) 에 있어서, 상기 산해리성 용해 억제기 (Ⅱ) 의 상기 X 가 아다만틸기 또는 나프틸기인 포지티브형 레지스트 조성물.
- 제 11 항에 있어서,상기 중합체 (A11) 이 추가로 (α-메틸)스티렌으로부터 유도되는 구성 단위 (a3) 을 가지는 포지티브형 레지스트 조성물.
- 제 9 항에 있어서,상기 중합체 (A1) 이 상기 구성 단위 (a11) 과, 알코올성 수산기를 가지는 (α-저급 알킬)아크릴산 에스테르로부터 유도되는 구성 단위 (a12) 와, 상기 구성 단위 (a11) 의 수산기의 수소 원자가 산해리성 용해 억제기 (Ⅱ) 로 치환되어 이루어지는 구성 단위 (a21), 상기 구성 단위 (a12) 의 알코올성 수산기의 수소 원자가 산해리성 용해 억제기 (Ⅱ) 로 치환되어 이루어지는 구성 단위 (a22), 또는 상기 구성 단위 (a21) 및 상기 구성 단위 (a22) 를 가지는 중합체 (A12) 이고, 또한상기 중합체 (A2) 가 상기 구성 단위 (a11) 및 상기 구성 단위 (a21) 를 가지고, 또한 상기 구성 단위 (a12) 및 상기 구성 단위 (a22) 를 가지지 않는 중합체 (A21) 인 포지티브형 레지스트 조성물.
- 제 14 항에 있어서,상기 중합체 (A12) 에 있어서, 상기 산해리성 용해 억제기 (Ⅱ) 가 1-알콕시 알킬기인 포지티브형 레지스트 조성물.
- 제 1 항에 있어서,포토마스크 제조용인 포지티브형 레지스트 조성물.
- 제 1 항 내지 제 16 항 중 어느 한 항의 포지티브형 레지스트 조성물을 이용하여 기판 상에 레지스트막을 형성하는 공정, 상기 레지스트막을 선택적으로 노광하는 공정, 상기 레지스트막을 알칼리 현상하여 레지스트 패턴을 형성하는 공정을 포함하는 레지스트 패턴 형성 방법.
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JP4717732B2 (ja) * | 2006-06-22 | 2011-07-06 | 東京応化工業株式会社 | ポジ型レジスト組成物およびレジストパターン形成方法 |
JP2009080162A (ja) * | 2007-09-25 | 2009-04-16 | Fujifilm Corp | 感光性組成物及びそれを用いたパターン形成方法 |
JP5150296B2 (ja) * | 2008-02-13 | 2013-02-20 | 富士フイルム株式会社 | 電子線、x線またはeuv用ポジ型レジスト組成物及びこれを用いたパターン形成方法 |
US20120122031A1 (en) * | 2010-11-15 | 2012-05-17 | International Business Machines Corporation | Photoresist composition for negative development and pattern forming method using thereof |
JP6209307B2 (ja) | 2011-09-30 | 2017-10-04 | 富士フイルム株式会社 | パターン形成方法、及びこれを用いた電子デバイスの製造方法 |
JP5820719B2 (ja) | 2011-12-21 | 2015-11-24 | 東京応化工業株式会社 | レジストパターン形成方法 |
JP2020165995A (ja) * | 2019-03-28 | 2020-10-08 | メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH | ポジ型レジスト組成物およびそれを用いたレジストパターンの製造方法 |
Family Cites Families (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3046225B2 (ja) * | 1995-06-15 | 2000-05-29 | 東京応化工業株式会社 | ポジ型レジスト膜形成用塗布液 |
TW448344B (en) | 1995-10-09 | 2001-08-01 | Shinetsu Chemical Co | Chemically amplified positive resist composition |
JP3239772B2 (ja) * | 1995-10-09 | 2001-12-17 | 信越化学工業株式会社 | 化学増幅ポジ型レジスト材料 |
ATE244904T1 (de) * | 1995-12-21 | 2003-07-15 | Wako Pure Chem Ind Ltd | Polymerzusammensetzung und rezistmaterial |
JP3665166B2 (ja) * | 1996-07-24 | 2005-06-29 | 東京応化工業株式会社 | 化学増幅型レジスト組成物及びそれに用いる酸発生剤 |
US6187504B1 (en) * | 1996-12-19 | 2001-02-13 | Jsr Corporation | Radiation sensitive resin composition |
JPH1172928A (ja) * | 1997-06-26 | 1999-03-16 | Shin Etsu Chem Co Ltd | パターン形成方法 |
TW350099B (en) * | 1998-01-26 | 1999-01-11 | United Microelectronics Corp | IC microfilm process |
EP0959389B1 (en) * | 1998-05-19 | 2004-03-31 | JSR Corporation | Diazodisulfone compound and radiation-sensitive resin composition |
TWI250379B (en) * | 1998-08-07 | 2006-03-01 | Az Electronic Materials Japan | Chemical amplified radiation-sensitive composition which contains onium salt and generator |
JP4131062B2 (ja) * | 1998-09-25 | 2008-08-13 | 信越化学工業株式会社 | 新規なラクトン含有化合物、高分子化合物、レジスト材料及びパターン形成方法 |
JP4013367B2 (ja) * | 1998-11-10 | 2007-11-28 | Jsr株式会社 | 感放射線性樹脂組成物 |
JP3785846B2 (ja) * | 1999-02-05 | 2006-06-14 | 住友化学株式会社 | 化学増幅型ポジ型レジスト組成物 |
JP4132355B2 (ja) | 1999-02-24 | 2008-08-13 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | 感放射線組成物 |
JP2000330284A (ja) | 1999-05-19 | 2000-11-30 | Fujitsu Ltd | レジスト材料及びレジストパターンの形成方法 |
US6479211B1 (en) * | 1999-05-26 | 2002-11-12 | Fuji Photo Film Co., Ltd. | Positive photoresist composition for far ultraviolet exposure |
JP4135276B2 (ja) * | 1999-10-12 | 2008-08-20 | Jsr株式会社 | 感放射線性樹脂組成物 |
US6723483B1 (en) * | 1999-12-27 | 2004-04-20 | Wako Pure Chemical Industries, Ltd. | Sulfonium salt compounds |
JP3433153B2 (ja) * | 2000-03-22 | 2003-08-04 | 株式会社東芝 | パターン形成材料、パターン形成方法、及び露光用マスクの製造方法 |
KR100533362B1 (ko) * | 2000-04-19 | 2005-12-06 | 주식회사 하이닉스반도체 | 레지스트 플로우 공정용 포토레지스트 조성물 및 이를이용한 콘택홀의 형성방법 |
US20030022097A1 (en) * | 2000-05-05 | 2003-01-30 | Arch Specialty Chemicals, Inc | Tertiary-butyl acrylate polymers and their use in photoresist compositions |
JP4479072B2 (ja) | 2000-07-19 | 2010-06-09 | 住友化学株式会社 | 電子線用レジスト組成物 |
JP4438218B2 (ja) * | 2000-11-16 | 2010-03-24 | Jsr株式会社 | 感放射線性樹脂組成物 |
KR100795112B1 (ko) * | 2001-02-05 | 2008-01-17 | 후지필름 가부시키가이샤 | 포지티브 레지스트 조성물 |
JP2002341538A (ja) | 2001-05-11 | 2002-11-27 | Fuji Photo Film Co Ltd | 電子線またはx線用ポジ型レジスト組成物 |
JP4044740B2 (ja) * | 2001-05-31 | 2008-02-06 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
CN100339767C (zh) | 2001-06-22 | 2007-09-26 | 和光纯药工业株式会社 | 抗蚀剂组合物 |
JP3894001B2 (ja) * | 2001-09-06 | 2007-03-14 | 住友化学株式会社 | 化学増幅型ポジ型レジスト組成物 |
US20030232273A1 (en) * | 2001-10-09 | 2003-12-18 | Shipley Company, L.L.C. | Acetal/alicyclic polymers and photoresist compositions |
KR100679446B1 (ko) | 2002-02-15 | 2007-02-06 | 닛뽕소다 가부시키가이샤 | 케텐-알데히드 공중합체를 함유하는 산분해성 수지 조성물 |
AU2003289430A1 (en) * | 2002-12-26 | 2004-07-22 | Tokyo Ohka Kogyo Co., Ltd. | Positive resist composition and method for forming resist pattern |
JP3991222B2 (ja) * | 2003-02-13 | 2007-10-17 | 信越化学工業株式会社 | 新規スルホニルジアゾメタン化合物、光酸発生剤、並びにそれを用いたレジスト材料及びパターン形成方法 |
JP4149306B2 (ja) | 2003-04-30 | 2008-09-10 | 東京応化工業株式会社 | ポジ型レジスト組成物およびレジストパターン形成方法 |
JP2004333548A (ja) | 2003-04-30 | 2004-11-25 | Tokyo Ohka Kogyo Co Ltd | ポジ型ホトレジスト組成物およびレジストパターン形成方法 |
JP4152810B2 (ja) * | 2003-06-13 | 2008-09-17 | 東京応化工業株式会社 | ポジ型レジスト組成物およびレジストパターン形成方法 |
JP4347205B2 (ja) * | 2004-01-23 | 2009-10-21 | 東京応化工業株式会社 | ポジ型レジスト組成物およびレジストパターン形成方法 |
US7169532B2 (en) * | 2004-12-29 | 2007-01-30 | Tokyo Ohka Kogyo Co., Ltd. | Chemically amplified positive photoresist composition for thick film, thick-film photoresist laminated product, manufacturing method for thick-film resist pattern, and manufacturing method for connection terminal |
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