JP2020128589A - 表面処理銅箔 - Google Patents
表面処理銅箔 Download PDFInfo
- Publication number
- JP2020128589A JP2020128589A JP2020004657A JP2020004657A JP2020128589A JP 2020128589 A JP2020128589 A JP 2020128589A JP 2020004657 A JP2020004657 A JP 2020004657A JP 2020004657 A JP2020004657 A JP 2020004657A JP 2020128589 A JP2020128589 A JP 2020128589A
- Authority
- JP
- Japan
- Prior art keywords
- copper foil
- treated
- layer
- range
- treated copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 128
- 239000011889 copper foil Substances 0.000 title claims abstract description 112
- 239000011800 void material Substances 0.000 claims abstract description 42
- 230000008021 deposition Effects 0.000 claims abstract description 13
- 239000011347 resin Substances 0.000 claims description 41
- 229920005989 resin Polymers 0.000 claims description 41
- 238000011282 treatment Methods 0.000 claims description 30
- 229910052751 metal Inorganic materials 0.000 claims description 29
- 239000002184 metal Substances 0.000 claims description 29
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 19
- 230000004888 barrier function Effects 0.000 claims description 19
- 238000010168 coupling process Methods 0.000 claims description 17
- 230000008878 coupling Effects 0.000 claims description 16
- 238000005859 coupling reaction Methods 0.000 claims description 16
- 229910052802 copper Inorganic materials 0.000 claims description 15
- 239000010949 copper Substances 0.000 claims description 15
- 238000004381 surface treatment Methods 0.000 claims description 12
- 239000011651 chromium Substances 0.000 claims description 9
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 239000011701 zinc Substances 0.000 claims description 6
- 239000011135 tin Substances 0.000 claims description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims 1
- 230000003449 preventive effect Effects 0.000 claims 1
- 229910052720 vanadium Inorganic materials 0.000 claims 1
- 230000005540 biological transmission Effects 0.000 abstract description 15
- 239000000463 material Substances 0.000 abstract description 11
- 239000010410 layer Substances 0.000 description 123
- 238000000034 method Methods 0.000 description 19
- 238000000151 deposition Methods 0.000 description 12
- 229910000365 copper sulfate Inorganic materials 0.000 description 11
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 11
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 10
- 239000011162 core material Substances 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 10
- 239000000523 sample Substances 0.000 description 9
- 239000003792 electrolyte Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 239000011888 foil Substances 0.000 description 6
- 238000007747 plating Methods 0.000 description 6
- 238000005498 polishing Methods 0.000 description 6
- 229910000077 silane Inorganic materials 0.000 description 6
- 238000000576 coating method Methods 0.000 description 5
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- 239000008151 electrolyte solution Substances 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 3
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- -1 chlorine-substituted benzotriazole Chemical class 0.000 description 3
- 229910001431 copper ion Inorganic materials 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
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- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 3
- 238000012876 topography Methods 0.000 description 3
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 2
- FMCUPJKTGNBGEC-UHFFFAOYSA-N 1,2,4-triazol-4-amine Chemical compound NN1C=NN=C1 FMCUPJKTGNBGEC-UHFFFAOYSA-N 0.000 description 2
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 description 2
- 229910000599 Cr alloy Inorganic materials 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical group C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
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- CVHZOJJKTDOEJC-UHFFFAOYSA-N saccharin Chemical compound C1=CC=C2C(=O)NS(=O)(=O)C2=C1 CVHZOJJKTDOEJC-UHFFFAOYSA-N 0.000 description 2
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- 150000003852 triazoles Chemical class 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- LTQBNYCMVZQRSD-UHFFFAOYSA-N (4-ethenylphenyl)-trimethoxysilane Chemical compound CO[Si](OC)(OC)C1=CC=C(C=C)C=C1 LTQBNYCMVZQRSD-UHFFFAOYSA-N 0.000 description 1
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- FBHPRUXJQNWTEW-UHFFFAOYSA-N 1-benzyl-2-methylimidazole Chemical compound CC1=NC=CN1CC1=CC=CC=C1 FBHPRUXJQNWTEW-UHFFFAOYSA-N 0.000 description 1
- QWENRTYMTSOGBR-UHFFFAOYSA-N 1H-1,2,3-Triazole Chemical compound C=1C=NNN=1 QWENRTYMTSOGBR-UHFFFAOYSA-N 0.000 description 1
- SNTWKPAKVQFCCF-UHFFFAOYSA-N 2,3-dihydro-1h-triazole Chemical compound N1NC=CN1 SNTWKPAKVQFCCF-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 description 1
- KFJDQPJLANOOOB-UHFFFAOYSA-N 2h-benzotriazole-4-carboxylic acid Chemical compound OC(=O)C1=CC=CC2=NNN=C12 KFJDQPJLANOOOB-UHFFFAOYSA-N 0.000 description 1
- DOYKFSOCSXVQAN-UHFFFAOYSA-N 3-[diethoxy(methyl)silyl]propyl 2-methylprop-2-enoate Chemical compound CCO[Si](C)(OCC)CCCOC(=O)C(C)=C DOYKFSOCSXVQAN-UHFFFAOYSA-N 0.000 description 1
- IKYAJDOSWUATPI-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propane-1-thiol Chemical compound CO[Si](C)(OC)CCCS IKYAJDOSWUATPI-UHFFFAOYSA-N 0.000 description 1
- LZMNXXQIQIHFGC-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propyl 2-methylprop-2-enoate Chemical compound CO[Si](C)(OC)CCCOC(=O)C(C)=C LZMNXXQIQIHFGC-UHFFFAOYSA-N 0.000 description 1
- ONLPKGMCOFNAJA-UHFFFAOYSA-N 3-methoxysilylpropane-1-thiol Chemical compound CO[SiH2]CCCS ONLPKGMCOFNAJA-UHFFFAOYSA-N 0.000 description 1
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- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 1
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 1
- KBQVDAIIQCXKPI-UHFFFAOYSA-N 3-trimethoxysilylpropyl prop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C=C KBQVDAIIQCXKPI-UHFFFAOYSA-N 0.000 description 1
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 description 1
- PRKPGWQEKNEVEU-UHFFFAOYSA-N 4-methyl-n-(3-triethoxysilylpropyl)pentan-2-imine Chemical compound CCO[Si](OCC)(OCC)CCCN=C(C)CC(C)C PRKPGWQEKNEVEU-UHFFFAOYSA-N 0.000 description 1
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 description 1
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- 238000010561 standard procedure Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- TXDNPSYEJHXKMK-UHFFFAOYSA-N sulfanylsilane Chemical class S[SiH3] TXDNPSYEJHXKMK-UHFFFAOYSA-N 0.000 description 1
- 239000004753 textile Substances 0.000 description 1
- 150000003557 thiazoles Chemical class 0.000 description 1
- FRGPKMWIYVTFIQ-UHFFFAOYSA-N triethoxy(3-isocyanatopropyl)silane Chemical compound CCO[Si](OCC)(OCC)CCCN=C=O FRGPKMWIYVTFIQ-UHFFFAOYSA-N 0.000 description 1
- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 1
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- 239000013598 vector Substances 0.000 description 1
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 description 1
- 235000009529 zinc sulphate Nutrition 0.000 description 1
- 239000011686 zinc sulphate Substances 0.000 description 1
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- C25D1/00—Electroforming
- C25D1/04—Wires; Strips; Foils
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- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
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- B32B15/00—Layered products comprising a layer of metal
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- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
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- C25D3/00—Electroplating: Baths therefor
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- C25D3/22—Electroplating: Baths therefor from solutions of zinc
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- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
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- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
- C25D5/12—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
- C25D5/14—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium two or more layers being of nickel or chromium, e.g. duplex or triplex layers
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- C25D5/16—Electroplating with layers of varying thickness
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- C25D5/48—After-treatment of electroplated surfaces
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- C25D9/00—Electrolytic coating other than with metals
- C25D9/04—Electrolytic coating other than with metals with inorganic materials
- C25D9/08—Electrolytic coating other than with metals with inorganic materials by cathodic processes
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- H05K1/02—Details
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- H05K1/18—Printed circuits structurally associated with non-printed electric components
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- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/382—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
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- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/389—Improvement of the adhesion between the insulating substrate and the metal by the use of a coupling agent, e.g. silane
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- B32B2255/00—Coating on the layer surface
- B32B2255/06—Coating on the layer surface on metal layer
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- B32B2255/20—Inorganic coating
- B32B2255/205—Metallic coating
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B32B2255/28—Multiple coating on one surface
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- B32B2307/00—Properties of the layers or laminate
- B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
- B32B2307/202—Conductive
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- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
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- C25D3/08—Deposition of black chromium, e.g. hexavalent chromium, CrVI
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- C25D3/00—Electroplating: Baths therefor
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- C25D3/38—Electroplating: Baths therefor from solutions of copper
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- H01M10/052—Li-accumulators
- H01M10/0525—Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
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- H01M2004/021—Physical characteristics, e.g. porosity, surface area
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- H01M2004/026—Electrodes composed of, or comprising, active material characterised by the polarity
- H01M2004/027—Negative electrodes
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- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
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Abstract
Description
銅箔の製造
・ドラム研磨(Drum buff)
電解銅箔を製造するためのシステムは、金属カソードドラム及び不溶性金属アノードを含む。前記金属カソードドラムは、回転可能であり、研磨面を有する。このシステムにおいて、不溶性金属アノードは、金属カソードドラムのほぼ下半部に配置され、当該金属カソードドラムを囲む。金属カソードドラムと不溶性金属アノードとの間に硫酸銅電解液を流させ、両者の間に電流を印加して、銅イオンを金属カソードドラムに吸引させて還元され、金属カソードドラムに銅を電着させることにより、電解銅箔を形成し、所定の厚さを得るとき、電解銅箔を金属カソードドラムから分離することにより、連続的な電着で電解銅箔を製造した。
銅線を硫酸水溶液(50重量%)に溶解させ、320g/Lの硫酸銅(CuSO4・5H2O)と100g/Lの硫酸とを含む硫酸銅電解液を製造した。前記硫酸銅電解液に、20mg/Lの塩素イオン濃度を提供するために、塩酸(RCI Labscan会社から取得)を添加した。0.35mg/Lのゼラチン(SV、ジャパン社)も添加した。
粗面化処理の第1の工程において、上記のように電解銅箔を製造した後、酸性溶液を使用して電解銅箔を洗浄した。過程において、130g/Lの硫酸銅と50g/Lの硫酸とを含む電解質が充填された酸洗浄容器を使用し、溶液の温度を約27℃に維持した。電解銅箔を酸洗浄容器に入れ、前記電解質に30秒間浸すことにより、表面の油、脂肪及び酸化物を除去した。その後、電解銅箔を水でリンスした。
表1には、上記のように特定の条件で作られた銅箔を示す。表1には、様々な条件で実行された11つの実施例と8つの比較例が表記されており、表面処理銅箔のいくつかの実施形態を例示的に説明する。
・算術平均うねり(Wa)
算術平均うねり(Wa)は、JIS B0601-2013 4.2.1に従って定義された。測定は、粗さ測定機(小坂研究所、SE600シリーズ)を使用して行われた。探針先端の直径は2μmであり、先端の錐角は90°であった。
RzはJIS B 0601−1994に従って定義された。
算術平均うねり(Wa)の測定に使用されたものと同じ表面粗さ測定機及び探針を使用して、表面処理面のプロファイルを検出した。評価長さは4.0mmであり、輪郭曲線(contour curve)のフィルタカットオフ値はfh(λc)=0.8mmであった。
レーザー顕微鏡(Olympus製、LEXT OLS5000−SAF)の表面テクスチャ分析を使用して、表面処理面のプロファイルを検出した。試験条件は次のとおりであった。
対物レンズ:100×(MPLAPON−100xLEXT)
光学ズーム:1.0×
評価長さ:4.0mm
解像度:1024画素×1024画素
条件:自動チルト除去(Auto tilt removal)
フィルター:フィルターなし
反射率は、コニカミノルタの携帯式分光光度計CM−2500cを使用して測定された。表面処理銅箔の表面処理面の反射率は、波長700nmの光を使用して測定された。光源はD65であり、ディスプレイはSPECT GRAPHであった。
表1における負荷率が10%の空隙容積(Vv)は、ISO 25178−2(2012)の工程に基づいて、実施例及び比較例から得られた。表面テクスチャ解析は、レーザー顕微鏡の画像で行った。レーザー顕微鏡は、Olympus製のLEXT OLS5000−SAFであり、画像は、空気温度24±3℃及び相対湿度63±3%で作成された。フィルターは、フィルターなし(unfiltered)と設定された。光源は405nm波長の光源であった。対物レンズは100×拡大倍率(MPLAPON−100xLEXT)であった。光学ズームは1.0×と設定された。画像面積は、129μm×129μmと設定された。解像度は1024画素×1024画素と設定された。条件はオートチルト除去(auto tilt removal)と設定された。
6枚の市販の樹脂シート(厚さが0.076mmである。SyTech社のS7439Gから取得)を共に積み重ね、銅箔をそれらの上に放置した。銅箔と樹脂シートを2枚の平板(ステンレス板)の間に配置した。スタックを温度200℃及び圧力400psiで120分間ホットプレスし、銅箔と樹脂層とのラミネート体を形成した。
ストリップライン(strip−line)を使用して伝送特性を評価した。樹脂に銅箔を貼り付け、さらにストリップラインとし、このストリップラインをソース電極として使用した。樹脂(SyTech社のS7439Gから取得)の厚さは152.4μmであり、IPC−TM650 No.2.5.5.5による10GHz信号試験でのDk=3.74、Df=0.006であった。前記ストリップラインは、長さが100mmであり、幅が120μmであり、厚さが35μmであった。
102 電解銅箔
104 ドラム面
106 沈積面
108 処理層
110 表面処理面
112 ノジュール層
114 バリア層
116 防錆層
118 カップリング層
210 ピーク
212 谷
213 領域
214 領域
312 領域
314 領域
316 領域
410 サンプル
412 機械探針
414 サンプリング方向
418 プロファイル
420 うねりプロファイル
422 粗度プロファイル
hWa、hRa 高さ
λWa、λRa 波長
Claims (13)
- ドラム面及び沈積面を含む電解銅箔と、
前記ドラム面に配置され、表面処理面を提供する処理層と
を含む表面処理銅箔であって、
前記処理層は、ノジュール層を含み、
前記表面処理面は、0.4〜2.2μm3/μm2の範囲内にある空隙容積(Vv)及び0.4μm以下である算術平均うねり(Wa)を有する、
表面処理銅箔。 - 前記表面処理面が、0.1〜0.4μmの範囲内にある算術平均うねり(Wa)を有する、請求項1に記載の表面処理銅箔。
- 前記表面処理面が、0.4〜2μm3/μm2の範囲内にあるコア空隙容積(Vvc)を有する、請求項1に記載の表面処理銅箔。
- 前記表面処理面が、0.01〜0.1μm3/μm2の範囲内にある谷部空隙容積(Vvv)を有する、請求項1に記載の表面処理銅箔。
- 前記表面処理面の光波長700nmにおける反射率は28%〜76%の範囲内にある、請求項1に記載の表面処理銅箔。
- 前記表面処理面の光波長700nmにおける反射率は40%を超える、請求項1に記載の表面処理銅箔。
- 前記表面処理面の光波長700nmにおける反射率が40%〜70%の範囲内にある、請求項6に記載の表面処理銅箔。
- 前記処理層は、バリア層、防錆層及びカップリング層の少なくとも一つをさらに含む、請求項1に記載の表面処理銅箔。
- 前記バリア層は、金属又は前記金属を含む合金で製造されており、
前記金属は、ニッケル、亜鉛、クロム、コバルト、モリブデン、鉄、スズ及びバナジウムから選ばれる少なくとも一つである、請求項8に記載の表面処理銅箔。 - 前記カップリング層は、シリコンを含む、請求項8に記載の表面処理銅箔。
- 前記ノジュール層は、銅ノジュールを含む、請求項1に記載の表面処理銅箔。
- 樹脂層と表面処理銅箔とを含むラミネート体であって、
前記表面処理銅箔は、
ドラム面及び沈積面を有する電解銅箔と、
前記ドラム面に配置され、前記樹脂層と接触させる表面処理面を提供する処理層とを含み、
前記処理層は、ノジュール層を含み、
前記表面処理面は、0.4〜2.2μm3/μm2の範囲内にある空隙容積(Vv)、0.1〜0.4μmの範囲内にある算術平均うねり(Wa)、0.4〜2μm3/μm2の範囲内にあるコア空隙容積(Vvc)、0.01〜0.1μm3/μm2の範囲内にある谷部空隙容積(Vvv)、及び40%〜70%の範囲内にある光波長700nmにおける反射率を有する、
ラミネート体。 - 請求項1に記載の表面処理銅箔を有する回路板と、前記回路板に取り付けられた複数の素子とを含む装置であって、
前記複数の素子の少なくとも第一の素子及び第二の素子は、前記回路板の表面処理銅箔を介して互いに電気的に接続される、
装置。
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