ATE297562T1 - Photoresist zusammensetzungen mit polycyclischen polymeren mit säurelabilen gruppen am ende - Google Patents

Photoresist zusammensetzungen mit polycyclischen polymeren mit säurelabilen gruppen am ende

Info

Publication number
ATE297562T1
ATE297562T1 AT97915987T AT97915987T ATE297562T1 AT E297562 T1 ATE297562 T1 AT E297562T1 AT 97915987 T AT97915987 T AT 97915987T AT 97915987 T AT97915987 T AT 97915987T AT E297562 T1 ATE297562 T1 AT E297562T1
Authority
AT
Austria
Prior art keywords
acid
groups
lability
compositions containing
polymer
Prior art date
Application number
AT97915987T
Other languages
English (en)
Inventor
Brian L Goodall
Saikumar Jayaraman
Robert A Shick
Larry F Rhodes
Original Assignee
Sumitomo Bakelite Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=21824483&utm_source=***_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE297562(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Sumitomo Bakelite Co filed Critical Sumitomo Bakelite Co
Application granted granted Critical
Publication of ATE297562T1 publication Critical patent/ATE297562T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
    • C08G61/04—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms
    • C08G61/06—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms prepared by ring-opening of carbocyclic compounds
    • C08G61/08—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms prepared by ring-opening of carbocyclic compounds of carbocyclic compounds containing one or more carbon-to-carbon double bonds in the ring
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/74—Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a ring other than a six-membered aromatic ring
    • C07C69/753—Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a ring other than a six-membered aromatic ring of polycyclic acids
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D401/00—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, at least one ring being a six-membered ring with only one nitrogen atom
    • C07D401/02—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, at least one ring being a six-membered ring with only one nitrogen atom containing two hetero rings
    • C07D401/10—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, at least one ring being a six-membered ring with only one nitrogen atom containing two hetero rings linked by a carbon chain containing aromatic rings
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D413/00—Heterocyclic compounds containing two or more hetero rings, at least one ring having nitrogen and oxygen atoms as the only ring hetero atoms
    • C07D413/14—Heterocyclic compounds containing two or more hetero rings, at least one ring having nitrogen and oxygen atoms as the only ring hetero atoms containing three or more hetero rings
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D471/00—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00
    • C07D471/02—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00 in which the condensed system contains two hetero rings
    • C07D471/04—Ortho-condensed systems
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D495/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
    • C07D495/02—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains two hetero rings
    • C07D495/04—Ortho-condensed systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
AT97915987T 1996-03-07 1997-03-06 Photoresist zusammensetzungen mit polycyclischen polymeren mit säurelabilen gruppen am ende ATE297562T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US2517496P 1996-03-07 1996-03-07
PCT/US1997/004103 WO1997033198A1 (en) 1996-03-07 1997-03-06 Photoresist compositions comprising polycyclic polymers with acid labile pendant groups

Publications (1)

Publication Number Publication Date
ATE297562T1 true ATE297562T1 (de) 2005-06-15

Family

ID=21824483

Family Applications (1)

Application Number Title Priority Date Filing Date
AT97915987T ATE297562T1 (de) 1996-03-07 1997-03-06 Photoresist zusammensetzungen mit polycyclischen polymeren mit säurelabilen gruppen am ende

Country Status (13)

Country Link
US (3) US6136499A (de)
EP (1) EP0885405B1 (de)
JP (1) JP3962432B2 (de)
KR (1) KR100536824B1 (de)
CN (1) CN1198181C (de)
AT (1) ATE297562T1 (de)
AU (1) AU725653B2 (de)
DE (1) DE69733469T2 (de)
HK (1) HK1017442A1 (de)
MY (1) MY127927A (de)
RU (1) RU2194295C2 (de)
TW (1) TW457401B (de)
WO (1) WO1997033198A1 (de)

Families Citing this family (273)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6692887B1 (en) 1996-02-09 2004-02-17 Jsr Corporation Radiation-sensitive resin composition
JP3804138B2 (ja) * 1996-02-09 2006-08-02 Ｊｓｒ株式会社 ＡｒＦエキシマレーザー照射用感放射線性樹脂組成物
US6232417B1 (en) * 1996-03-07 2001-05-15 The B. F. Goodrich Company Photoresist compositions comprising polycyclic polymers with acid labile pendant groups
DE69733469T2 (de) 1996-03-07 2006-03-23 Sumitomo Bakelite Co. Ltd. Photoresist zusammensetzungen mit polycyclischen polymeren mit säurelabilen gruppen am ende
KR100211548B1 (ko) * 1996-12-20 1999-08-02 김영환 원자외선용 감광막 공중합체 및 그 제조방법
KR100265597B1 (ko) * 1996-12-30 2000-09-15 김영환 Arf 감광막 수지 및 그 제조방법
US6808859B1 (en) * 1996-12-31 2004-10-26 Hyundai Electronics Industries Co., Ltd. ArF photoresist copolymers
KR100220953B1 (ko) 1996-12-31 1999-10-01 김영환 아미드 또는 이미드를 도입한 ArF 감광막 수지
KR100225956B1 (ko) * 1997-01-10 1999-10-15 김영환 아민을 도입한 에이알에프 감광막 수지
EP0877293B1 (de) 1997-05-09 2004-01-14 Fuji Photo Film Co., Ltd. Positiv arbeitende lichtempfindliche Zusammensetzung
US7087691B2 (en) * 1997-06-18 2006-08-08 Promerus Llc Photo-imageable compositions of norbornene and acrylate copolymers and use thereof
DE19729067A1 (de) * 1997-07-08 1999-01-14 Agfa Gevaert Ag Infrarot-bebilderbares Aufzeichnungsmaterial und daraus hergestellte Offsetdruckplatte
KR100572899B1 (ko) * 1997-09-12 2006-04-24 스미토모 베이클라이트 가부시키가이샤 산 불안정성 펜던트 기를 갖는 폴리시클릭 중합체를 포함하는 포토레지스트 조성물
GB9722862D0 (en) * 1997-10-29 1997-12-24 Horsell Graphic Ind Ltd Pattern formation
KR100254472B1 (ko) * 1997-11-01 2000-05-01 김영환 신규한 말레이미드계 또는 지방족 환형 올레핀계 단량체와 이들 단량체들의 공중합체수지 및 이수지를 이용한 포토레지스트
KR100252546B1 (ko) * 1997-11-01 2000-04-15 김영환 공중합체 수지와 포토레지스트 및 그 제조방법
US6057083A (en) * 1997-11-04 2000-05-02 Shipley Company, L.L.C. Polymers and photoresist compositions
KR100321080B1 (ko) 1997-12-29 2002-11-22 주식회사 하이닉스반도체 공중합체수지와이의제조방법및이수지를이용한포토레지스트
KR100354871B1 (ko) 1997-12-31 2003-03-10 주식회사 하이닉스반도체 공중합체수지와그제조방법및이수지를이용한포토레지스트
KR100334387B1 (ko) * 1997-12-31 2002-11-22 주식회사 하이닉스반도체 공중합체수지와그제조방법및이수지를이용한포토레지스트
KR100313150B1 (ko) * 1997-12-31 2001-12-28 박종섭 리소콜릴에시딜(메타)아크릴레이트 단량체와 그를 도입한 공중합체 수지 및 이 수지를 이용한 포토레지스트
KR100520148B1 (ko) 1997-12-31 2006-05-12 주식회사 하이닉스반도체 신규한바이시클로알켄유도체와이를이용한포토레지스트중합체및이중합체를함유한포토레지스트조성물
EP0930541A1 (de) * 1998-01-16 1999-07-21 JSR Corporation Strahlungsempfindliche Harzzusammensetzung
JPH11231541A (ja) * 1998-02-17 1999-08-27 Daicel Chem Ind Ltd 放射線感光材料及びそれを使用したパターン形成方法
ATE542837T1 (de) * 1998-02-23 2012-02-15 Sumitomo Bakelite Co Polycyclische resistzusammensetzungen mit verbesserter ätzbeständigkeit
WO1999042510A1 (en) * 1998-02-23 1999-08-26 The B.F. Goodrich Company Modified polycyclic polymers
JP3918290B2 (ja) * 1998-03-24 2007-05-23 日本ゼオン株式会社 接着性樹脂組成物
KR19990081722A (ko) 1998-04-30 1999-11-15 김영환 카르복실기 함유 지환족 유도체 및 그의 제조방법
KR100376983B1 (ko) 1998-04-30 2003-08-02 주식회사 하이닉스반도체 포토레지스트중합체및이를이용한미세패턴의형성방법
US6159656A (en) * 1998-06-26 2000-12-12 Fuji Photo Film Co., Ltd. Positive photosensitive resin
US6372854B1 (en) 1998-06-29 2002-04-16 Mitsui Chemicals, Inc. Hydrogenated ring-opening metathesis polymer and its use and production
KR100403325B1 (ko) 1998-07-27 2004-03-24 주식회사 하이닉스반도체 포토레지스트중합체및이를이용한포토레지스트조성물
KR20000015014A (ko) 1998-08-26 2000-03-15 김영환 신규의 포토레지스트용 단량체, 중합체 및 이를 이용한 포토레지스트 조성물
JP3587743B2 (ja) 1998-08-26 2004-11-10 株式会社ハイニックスセミコンダクター フォトレジスト単量体とその製造方法、フォトレジスト共重合体とその製造方法、フォトレジスト組成物、フォトレジストパターン形成方法、および、半導体素子。
US6569971B2 (en) 1998-08-27 2003-05-27 Hyundai Electronics Industries Co., Ltd. Polymers for photoresist and photoresist compositions using the same
EP1131677B1 (de) 1998-09-23 2005-08-03 E.I. Dupont De Nemours And Company Photoresists, polymere und verfahren für die mikrolithographie
KR100271420B1 (ko) * 1998-09-23 2001-03-02 박찬구 화학증폭형 양성 포토레지스트 조성물
US6849377B2 (en) 1998-09-23 2005-02-01 E. I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
AU6291999A (en) * 1998-10-05 2000-04-26 B.F. Goodrich Company, The Catalyst and methods for polymerizing cycloolefins
US6903171B2 (en) * 1998-10-05 2005-06-07 Promerus, Llc Polymerized cycloolefins using transition metal catalyst and end products thereof
KR100274119B1 (ko) * 1998-10-08 2001-03-02 박찬구 감방사선성 레지스트 제조용 중합체 및 이를 함유하는 레지스트조성물
US6235447B1 (en) * 1998-10-17 2001-05-22 Hyundai Electronics Industries Co., Ltd. Photoresist monomers, polymers thereof, and photoresist compositions containing the same
US6312867B1 (en) * 1998-11-02 2001-11-06 Shin-Etsu Chemical Co., Ltd. Ester compounds, polymers, resist compositions and patterning process
US6235849B1 (en) * 1999-02-05 2001-05-22 The B. F. Goodrich Company Method of preparing norbornene sulfonamide polymers
US6420503B1 (en) * 1999-02-05 2002-07-16 Sumitomo Bakelite Co. Ltd. Norbornene sulfonamide polymers
KR100557608B1 (ko) * 1999-02-10 2006-03-10 주식회사 하이닉스반도체 신규의 포토레지스트 가교제 및 이를 이용한 포토레지스트 조성물
JP3680920B2 (ja) * 1999-02-25 2005-08-10 信越化学工業株式会社 新規なエステル化合物、高分子化合物、レジスト材料、及びパターン形成方法
CN1267000A (zh) * 1999-03-11 2000-09-20 国际商业机器公司 环状烯烃聚合物和添加剂的光刻胶组合物
US6124074A (en) * 1999-03-11 2000-09-26 International Business Machines Corporation Photoresist compositions with cyclic olefin polymers and hydrophobic non-steroidal multi-alicyclic additives
JP4678091B2 (ja) * 1999-03-12 2011-04-27 住友ベークライト株式会社 ペンダント環式無水物基を含有するポリマーの製造法
AU3524800A (en) 1999-03-12 2000-09-28 B.F. Goodrich Company, The Polycyclic polymers containing pendant cyclic anhydride groups
TW527524B (en) * 1999-04-01 2003-04-11 Fuji Photo Film Co Ltd Positive photoresist composition for far ultraviolet exposure
US6790587B1 (en) 1999-05-04 2004-09-14 E. I. Du Pont De Nemours And Company Fluorinated polymers, photoresists and processes for microlithography
KR100301062B1 (ko) * 1999-07-29 2001-09-22 윤종용 백본이 환상구조를 가지는 감광성 폴리머와 이를 포함하는 레지스트 조성물
KR100557620B1 (ko) * 1999-07-30 2006-03-10 주식회사 하이닉스반도체 신규의 포토레지스트용 단량체, 그의 공중합체 및 이를 이용한포토레지스트 조성물
KR20010011765A (ko) * 1999-07-30 2001-02-15 김영환 레지스트 수지 및 이 수지를 이용한 포토레지스트 패턴의 형성방법
KR100301065B1 (ko) * 1999-08-16 2001-09-22 윤종용 백본이 환상 구조를 가지는 감광성 폴리머와 이를 포함하는 레지스트 조성물
KR100557594B1 (ko) * 1999-08-17 2006-03-10 주식회사 하이닉스반도체 노광후 지연 안정성을 갖는 신규의 포토레지스트용 단량체, 그의 공중합체 및 이를 함유한 포토레지스트 조성물
US6461789B1 (en) 1999-08-25 2002-10-08 Shin-Etsu Chemical Co., Ltd. Polymers, chemical amplification resist compositions and patterning process
TWI289568B (en) 1999-08-30 2007-11-11 Shinetsu Chemical Co Polymer compound, resist material, and pattern formation method
TW527363B (en) 1999-09-08 2003-04-11 Shinetsu Chemical Co Polymers, chemical amplification resist compositions and patterning process
KR100653302B1 (ko) 1999-09-08 2006-12-04 신에쓰 가가꾸 고교 가부시끼가이샤 스티렌 유도체
KR100455538B1 (ko) 1999-10-13 2004-11-15 신에쓰 가가꾸 고교 가부시끼가이샤 스티렌 유도체
KR100549160B1 (ko) 1999-10-13 2006-02-03 신에쓰 가가꾸 고교 가부시끼가이샤 고분자 화합물, 화학 증폭 레지스트 재료 및 패턴 형성 방법
JP3734012B2 (ja) 1999-10-25 2006-01-11 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP5095048B2 (ja) * 1999-11-15 2012-12-12 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
JP4529245B2 (ja) * 1999-12-03 2010-08-25 住友化学株式会社 化学増幅型ポジ型レジスト組成物
US6365322B1 (en) 1999-12-07 2002-04-02 Clariant Finance (Bvi) Limited Photoresist composition for deep UV radiation
KR100592010B1 (ko) 2000-02-16 2006-06-22 신에쓰 가가꾸 고교 가부시끼가이샤 고분자 화합물, 화학 증폭 레지스트 재료 및 패턴 형성 방법
US6579658B2 (en) 2000-02-17 2003-06-17 Shin-Etsu Chemical Co., Ltd. Polymers, resist compositions and patterning process
IL151038A0 (en) * 2000-02-22 2003-04-10 Ciba Sc Holding Ag Ring opening metathesis polymerisation with oligomeric uv-absorbers
US6406828B1 (en) * 2000-02-24 2002-06-18 Shipley Company, L.L.C. Polymer and photoresist compositions
KR100585365B1 (ko) 2000-04-13 2006-06-01 신에쓰 가가꾸 고교 가부시끼가이샤 레지스트 재료 및 패턴 형성 방법
US6878501B2 (en) 2000-04-27 2005-04-12 Shin-Etsu Chemical Co., Ltd. Polymer, chemically amplified resist composition and patterning process
US6251560B1 (en) * 2000-05-05 2001-06-26 International Business Machines Corporation Photoresist compositions with cyclic olefin polymers having lactone moiety
TWI226519B (en) 2000-06-02 2005-01-11 Shinetsu Chemical Co Polymers, resist compositions and patterning process
US7176114B2 (en) * 2000-06-06 2007-02-13 Simon Fraser University Method of depositing patterned films of materials using a positive imaging process
JP4838437B2 (ja) * 2000-06-16 2011-12-14 Ｊｓｒ株式会社 感放射線性樹脂組成物
KR100583095B1 (ko) * 2000-06-30 2006-05-24 주식회사 하이닉스반도체 광산 발생제와 함께 광 라디칼 발생제(ｐｒｇ)를 포함하는포토레지스트 조성물
JP3928690B2 (ja) * 2000-07-06 2007-06-13 信越化学工業株式会社 脂環構造を有する新規ラクトン化合物及びその製造方法
JP3956089B2 (ja) * 2000-08-08 2007-08-08 信越化学工業株式会社 アセタール化合物及びその製造方法
US6627391B1 (en) 2000-08-16 2003-09-30 International Business Machines Corporation Resist compositions containing lactone additives
TW565747B (en) 2000-09-07 2003-12-11 Shinetsu Chemical Co Polymers, resist compositions and patterning process
TW594410B (en) 2000-09-07 2004-06-21 Shinetsu Chemical Co Resist compositions and patterning process
TW588221B (en) 2000-09-07 2004-05-21 Shinetsu Chemical Co Polymers, resist compositions and patterning process
TW588058B (en) 2000-09-07 2004-05-21 Shinetsu Chemical Co Polymers, resist compositions and patterning process
JP4821943B2 (ja) * 2001-05-30 2011-11-24 Ｊｓｒ株式会社 環状オレフィン系付加型共重合体の架橋体、架橋用組成物および架橋体の製造方法
US6974657B2 (en) 2000-10-18 2005-12-13 E. I. Du Pont De Nemours And Company Compositions for microlithography
US6749987B2 (en) * 2000-10-20 2004-06-15 Fuji Photo Film Co., Ltd. Positive photosensitive composition
JP4872151B2 (ja) * 2000-11-10 2012-02-08 Ｊｓｒ株式会社 環状オレフィン系重合体組成物およびその製造方法
JP2004536327A (ja) 2000-11-29 2004-12-02 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー ポリマーブレンド及びマイクロリソグラフィ用フォトレジスト組成物中でのそれらの使用
JP5013033B2 (ja) * 2001-07-27 2012-08-29 Ｊｓｒ株式会社 環状オレフィン付加重合体の製造方法
US6911507B2 (en) 2001-01-24 2005-06-28 Jsr Corporation Processes for producing cycloolefin addition polymer
JP4941621B2 (ja) * 2001-07-27 2012-05-30 Ｊｓｒ株式会社 環状オレフィン付加重合体の製造方法
JP3962893B2 (ja) 2001-02-09 2007-08-22 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
TWI300790B (en) 2001-02-28 2008-09-11 Shinetsu Chemical Co Polymers, Resist Compositions and Patterning Process
TWI245774B (en) 2001-03-01 2005-12-21 Shinetsu Chemical Co Silicon-containing polymer, resist composition and patterning process
US6838489B2 (en) 2001-03-23 2005-01-04 Cymetech, Llc High activity metal carbene metathesis catalysts generated using a thermally activated N-heterocyclic carbene precursor
KR20020096257A (ko) * 2001-06-19 2002-12-31 주식회사 하이닉스반도체 신규의 포토레지스트 단량체, 그의 중합체 및 이를함유하는 포토레지스트 조성물
TW584786B (en) 2001-06-25 2004-04-21 Shinetsu Chemical Co Polymers, resist compositions and patterning process
TW574607B (en) 2001-06-25 2004-02-01 Shinetsu Chemical Co Polymers, resist compositions and patterning process
JP3891257B2 (ja) 2001-06-25 2007-03-14 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
TWI245043B (en) 2001-06-25 2005-12-11 Shinetsu Chemical Co Novel ester compounds
DE10131487B4 (de) * 2001-06-29 2005-11-24 Infineon Technologies Ag Negativer Resistprozess mit simultaner Entwicklung und Aromatisierung von Resiststrukturen
TWI282036B (en) 2001-07-13 2007-06-01 Shinetsu Chemical Co Resist patterning process
KR100424431B1 (ko) * 2001-09-26 2004-03-24 삼성아토피나주식회사 엑소리치 노보넨 에스테르의 제조방법
TW574614B (en) 2001-09-27 2004-02-01 Shinetsu Chemical Co Chemically amplified resist compositions and patterning process
US6723488B2 (en) * 2001-11-07 2004-04-20 Clariant Finance (Bvi) Ltd Photoresist composition for deep UV radiation containing an additive
JP4522628B2 (ja) 2001-11-28 2010-08-11 信越化学工業株式会社 新規なエステル化合物
CN100413898C (zh) * 2001-12-12 2008-08-27 住友电木株式会社 聚合物组合物及其用途
US7138218B2 (en) 2001-12-18 2006-11-21 Hynix Semiconductor Inc. Process for forming an ultra fine pattern using a bottom anti-reflective coating film containing an acid generator
JP3874092B2 (ja) 2001-12-26 2007-01-31 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
US7070914B2 (en) 2002-01-09 2006-07-04 Az Electronic Materials Usa Corp. Process for producing an image using a first minimum bottom antireflective coating composition
US6844131B2 (en) 2002-01-09 2005-01-18 Clariant Finance (Bvi) Limited Positive-working photoimageable bottom antireflective coating
US6916592B2 (en) 2002-03-25 2005-07-12 Shin-Etsu Chemical Co., Ltd. Esters, polymers, resist compositions and patterning process
TWI285650B (en) 2002-03-25 2007-08-21 Shinetsu Chemical Co Polymers, resist compositions and patterning process
TWI304412B (en) 2002-03-26 2008-12-21 Shinetsu Chemical Co Polymers, resist compositions andpatterning process
US6866983B2 (en) * 2002-04-05 2005-03-15 Shin-Etsu Chemical Co., Ltd. Resist compositions and patterning process
JP3856122B2 (ja) * 2002-04-05 2006-12-13 信越化学工業株式会社 レジスト材料及びパターン形成方法
CN100386357C (zh) * 2002-04-08 2008-05-07 日本瑞翁株式会社 基于降冰片烯的开环聚合物,降冰片烯开环聚合物的加氢产物及它们的制备方法
US7198880B2 (en) * 2002-04-26 2007-04-03 Fujifilm Corporation Positive resist composition
US7232638B2 (en) 2002-05-02 2007-06-19 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
AU2003247439A1 (en) * 2002-05-30 2003-12-19 Exxonmobil Chemical Patents Inc. Soluble late transition metal catalysts for olefin oligomerizations
US20030235775A1 (en) 2002-06-13 2003-12-25 Munirathna Padmanaban Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds
JP3912512B2 (ja) 2002-07-02 2007-05-09 信越化学工業株式会社 珪素含有高分子化合物、レジスト材料及びパターン形成方法
US6919161B2 (en) 2002-07-02 2005-07-19 Shin-Etsu Chemical Co., Ltd. Silicon-containing polymer, resist composition and patterning process
US7022790B2 (en) 2002-07-03 2006-04-04 Sumitomo Bakelite Company, Ltd. Photosensitive compositions based on polycyclic polymers
WO2004007587A1 (en) * 2002-07-10 2004-01-22 Lg Chem, Ltd. Nobonene-ester based addition polymer and method for preparing the same
KR100526403B1 (ko) 2002-07-10 2005-11-08 주식회사 엘지화학 에스테르기 또는 아세틸기를 포함하는 노보넨계부가중합체의 제조방법
US7312285B2 (en) 2002-07-10 2007-12-25 Lg Chem, Ltd. Method for preparing norbornene based addition polymer containing ester or acetyl functional group
US7989571B2 (en) 2002-07-10 2011-08-02 Lg Chem, Ltd. Method for producing norbornene monomer composition, norbornene polymer prepared therefrom, optical film comprising the norbornene polymer, and method for producing the norbornene polymer
US7125943B2 (en) * 2002-08-07 2006-10-24 Central Glass Company, Limited Fluorine-containing compounds and their polymers useful for anti-reflection film materials and resist compositions
JP3912516B2 (ja) 2002-08-09 2007-05-09 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
US6756180B2 (en) 2002-10-22 2004-06-29 International Business Machines Corporation Cyclic olefin-based resist compositions having improved image stability
JP3900276B2 (ja) 2002-10-25 2007-04-04 信越化学工業株式会社 レジスト材料及びパターン形成方法
US6677419B1 (en) 2002-11-13 2004-01-13 International Business Machines Corporation Preparation of copolymers
US7264913B2 (en) 2002-11-21 2007-09-04 Az Electronic Materials Usa Corp. Antireflective compositions for photoresists
TWI252374B (en) 2003-01-30 2006-04-01 Shinetsu Chemical Co Polymer, resist composition and patterning process
JP4133399B2 (ja) 2003-02-10 2008-08-13 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
JP4240202B2 (ja) 2003-02-10 2009-03-18 信越化学工業株式会社 スルホン酸エステル基を有する高分子化合物、レジスト材料及びパターン形成方法
WO2004074933A2 (en) * 2003-02-20 2004-09-02 Promerus Llc Dissolution rate modifiers for photoresist compositions
KR20050098955A (ko) * 2003-02-21 2005-10-12 에이제트 일렉트로닉 머트리얼즈 유에스에이 코프. 원자외선 리소그래피용 포토레지스트 조성물
US7674847B2 (en) * 2003-02-21 2010-03-09 Promerus Llc Vinyl addition polycyclic olefin polymers prepared with non-olefinic chain transfer agents and uses thereof
US20040166434A1 (en) * 2003-02-21 2004-08-26 Dammel Ralph R. Photoresist composition for deep ultraviolet lithography
US7341816B2 (en) * 2003-02-24 2008-03-11 Promerus, Llc Method of controlling the differential dissolution rate of photoresist compositions, polycyclic olefin polymers and monomers used for making such polymers
US7160834B2 (en) * 2003-03-18 2007-01-09 Exxonmobil Chemical Patents Inc. Soluble group-10 α-diimine catalyst precursors, catalysts and methods for dimerizing and oligomerizing olefins
JP4012480B2 (ja) * 2003-03-28 2007-11-21 Ａｚエレクトロニックマテリアルズ株式会社 微細パターン形成補助剤及びその製造法
JP2004354417A (ja) 2003-05-27 2004-12-16 Shin Etsu Chem Co Ltd ポジ型レジスト材料並びにこれを用いたパターン形成方法
US7300739B2 (en) * 2003-05-29 2007-11-27 International Business Machines Corporation Negative resists based on a acid-catalyzed elimination of polar molecules
JP2005070316A (ja) * 2003-08-22 2005-03-17 Fuji Photo Film Co Ltd ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4013063B2 (ja) 2003-08-26 2007-11-28 信越化学工業株式会社 レジスト材料及びパターン形成方法
US7166418B2 (en) 2003-09-03 2007-01-23 Matsushita Electric Industrial Co., Ltd. Sulfonamide compound, polymer compound, resist material and pattern formation method
US7060775B2 (en) 2003-10-02 2006-06-13 Matsushita Electronic Industrial Co., Ltd. Polymer compound, resist material and pattern formation method
US7169530B2 (en) 2003-10-02 2007-01-30 Matsushita Electric Industrial Co., Ltd. Polymer compound, resist material and pattern formation method
US7338742B2 (en) 2003-10-08 2008-03-04 Hynix Semiconductor Inc. Photoresist polymer and photoresist composition containing the same
US7189493B2 (en) 2003-10-08 2007-03-13 Shin-Etsu Chemical Co., Ltd. Polymer, positive resist composition, and patterning process using the same
US7232641B2 (en) 2003-10-08 2007-06-19 Shin-Etsu Chemical Co., Ltd. Polymerizable compound, polymer, positive-resist composition, and patterning process using the same
US7270937B2 (en) 2003-10-17 2007-09-18 Hynix Semiconductor Inc. Over-coating composition for photoresist and process for forming photoresist pattern using the same
JP4235810B2 (ja) 2003-10-23 2009-03-11 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
TWI286555B (en) 2003-10-23 2007-09-11 Shinetsu Chemical Co Polymers, resist compositions and patterning process
US20070112158A1 (en) * 2003-11-18 2007-05-17 Jsr Corporation Novel (co)polymer, process for producing the same, and process for producing carboxylated (co)polymer
KR100680405B1 (ko) 2003-11-19 2007-02-08 주식회사 하이닉스반도체 Ｅｕｖ용 포토레지스트 조성물 및 이를 이용한포토레지스트 패턴 형성 방법
US7081501B2 (en) 2003-12-01 2006-07-25 Mitsui Chemicals, Inc. Hydrogenated ring-opening metathesis polymer and process for producing the same
US7442487B2 (en) * 2003-12-30 2008-10-28 Intel Corporation Low outgassing and non-crosslinking series of polymers for EUV negative tone photoresists
US7101654B2 (en) * 2004-01-14 2006-09-05 Promerus Llc Norbornene-type monomers and polymers containing pendent lactone or sultone groups
JP4525912B2 (ja) 2004-01-30 2010-08-18 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
US7473512B2 (en) 2004-03-09 2009-01-06 Az Electronic Materials Usa Corp. Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof
US20050214674A1 (en) 2004-03-25 2005-09-29 Yu Sui Positive-working photoimageable bottom antireflective coating
US7081511B2 (en) 2004-04-05 2006-07-25 Az Electronic Materials Usa Corp. Process for making polyesters
KR100942627B1 (ko) 2004-04-09 2010-02-17 신에쓰 가가꾸 고교 가부시끼가이샤 포지티브형 레지스트 재료 및 이를 이용한 패턴 형성 방법
TWI341441B (en) 2004-04-09 2011-05-01 Shinetsu Chemical Co Positive resist composition and patterning process
CN1946751B (zh) 2004-04-27 2010-12-08 东京应化工业株式会社 用于形成液浸曝光工艺用光刻胶保护膜的材料、以及使用该保护膜的光刻胶图案形成方法
WO2005118656A2 (en) 2004-05-20 2005-12-15 E.I. Dupont De Nemours And Company Photoresists comprising polymers derived from fluoroalcohol-substituted polycyclic monomers
JP3978215B2 (ja) 2004-05-25 2007-09-19 松下電器産業株式会社 レジスト材料及びパターン形成方法
JP3978217B2 (ja) 2004-05-27 2007-09-19 松下電器産業株式会社 レジスト材料及びパターン形成方法
WO2006017035A1 (en) * 2004-07-07 2006-02-16 Promerus Llc Photosensitive dielectric resin compositions and their uses
JP4368267B2 (ja) 2004-07-30 2009-11-18 東京応化工業株式会社 レジスト保護膜形成用材料、およびこれを用いたレジストパターン形成方法
US7691556B2 (en) 2004-09-15 2010-04-06 Az Electronic Materials Usa Corp. Antireflective compositions for photoresists
KR100591013B1 (ko) 2004-09-16 2006-06-22 금호석유화학 주식회사 불소 원소를 함유하는 방향족 탄화수소 화합물을 촉매활성화제로 이용한 고리형 올레핀 화합물의 단일 및공중합체 제조방법
TW200628981A (en) * 2004-09-29 2006-08-16 Sumitomo Bakelite Co Semiconductor device
US7595141B2 (en) 2004-10-26 2009-09-29 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern
JP4431888B2 (ja) 2004-10-28 2010-03-17 信越化学工業株式会社 含フッ素重合性化合物、その製造方法、この化合物から得られる高分子化合物、レジスト材料及びこれを用いたパターン形成方法
KR100655801B1 (ko) * 2005-01-18 2006-12-08 삼성전자주식회사 포토레지스트 조성물 및 이를 이용한 포토레지스트 패턴형성 방법
JP4506968B2 (ja) 2005-02-04 2010-07-21 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
US7799883B2 (en) * 2005-02-22 2010-09-21 Promerus Llc Norbornene-type polymers, compositions thereof and lithographic process using such compositions
JP2006328003A (ja) 2005-05-27 2006-12-07 Shin Etsu Chem Co Ltd 新規な重合性エステル化合物
JP4687878B2 (ja) 2005-05-27 2011-05-25 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
US7834209B2 (en) 2005-06-07 2010-11-16 E.I. Du Pont De Nemours And Company Hydrofluoroalkanesulfonic acids from fluorovinyl ethers
JP4697443B2 (ja) 2005-09-21 2011-06-08 信越化学工業株式会社 ポジ型レジスト材料並びにこれを用いたパターン形成方法
US7553905B2 (en) 2005-10-31 2009-06-30 Az Electronic Materials Usa Corp. Anti-reflective coatings
JP4488230B2 (ja) 2005-10-31 2010-06-23 信越化学工業株式会社 レジスト用重合体、レジスト材料及びパターン形成方法
US7629106B2 (en) 2005-11-16 2009-12-08 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process using the same
JP4831307B2 (ja) 2005-12-02 2011-12-07 信越化学工業株式会社 新規なエステル化合物、高分子化合物、レジスト材料及びパターン形成方法
JP4826242B2 (ja) * 2005-12-12 2011-11-30 Ｊｓｒ株式会社 環状オレフィン系付加重合体の製造方法
KR100694412B1 (ko) 2006-02-24 2007-03-12 주식회사 하이닉스반도체 반도체소자의 미세패턴 형성방법
US7745339B2 (en) 2006-02-24 2010-06-29 Hynix Semiconductor Inc. Method for forming fine pattern of semiconductor device
US7491483B2 (en) 2006-03-06 2009-02-17 Shin-Etsu Chemical Co., Ltd. Polymers, positive resist compositions and patterning process
JP5228909B2 (ja) 2006-06-07 2013-07-03 住友ベークライト株式会社 受光装置の製造方法
JP4784753B2 (ja) 2006-07-06 2011-10-05 信越化学工業株式会社 重合性エステル化合物、重合体、レジスト材料及びパターン形成方法
WO2008023668A1 (fr) * 2006-08-25 2008-02-28 Nippon Oil Corporation Film à retard et dispositif d'affichage à cristaux liquides l'utilisant
JP4225427B2 (ja) * 2006-09-28 2009-02-18 三井化学株式会社 開環メタセシス重合体水素添加物、それを含有するレジスト材料及びパターン形成方法
US7923200B2 (en) * 2007-04-09 2011-04-12 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern comprising a lactam
JP5069494B2 (ja) * 2007-05-01 2012-11-07 ＡｚエレクトロニックマテリアルズＩｐ株式会社 微細化パターン形成用水溶性樹脂組成物およびこれを用いた微細パターン形成方法
EP2477215A3 (de) 2007-06-12 2013-08-14 Sumitomo Bakelite Company Limited Harzzusammensetzung, Einbettungsmaterial, Isolierschicht und Halbleitervorrichtung
JP5309526B2 (ja) * 2007-10-19 2013-10-09 信越化学工業株式会社 開環メタセシス重合体水素添加物、それを含有するレジスト材料及びパターン形成方法
US8088548B2 (en) 2007-10-23 2012-01-03 Az Electronic Materials Usa Corp. Bottom antireflective coating compositions
US20090191476A1 (en) * 2008-01-25 2009-07-30 Neil John Rogers Thermoplastic materials comprising charge transfer agents and photo acid generating agents
US8609574B2 (en) * 2008-04-25 2013-12-17 Promerus Llc In situ olefin polymerization catalyst system
US7745077B2 (en) * 2008-06-18 2010-06-29 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern
EP2143489A1 (de) * 2008-07-08 2010-01-13 Lanxess Deutschland GmbH Katalysator-Systeme und deren Verwendung für Metathese-Reaktionen
JP2010085921A (ja) * 2008-10-02 2010-04-15 Panasonic Corp レジスト材料及びそれを用いたパターン形成方法
US8455176B2 (en) 2008-11-12 2013-06-04 Az Electronic Materials Usa Corp. Coating composition
US20100136477A1 (en) 2008-12-01 2010-06-03 Ng Edward W Photosensitive Composition
US8716385B2 (en) * 2008-12-15 2014-05-06 Central Glass Company, Limited Polymerizable fluoromonomer, fluoropolymer, resist material, and method of pattern formation
KR101331919B1 (ko) * 2008-12-15 2013-11-21 샌트랄 글래스 컴퍼니 리미티드 탑코트 조성물, 반도체 장치 제조용의 탑코트 및 반도체 장치
US8771927B2 (en) 2009-04-15 2014-07-08 Brewer Science Inc. Acid-etch resistant, protective coatings
TW201043658A (en) 2009-06-15 2010-12-16 Sumitomo Bakelite Co Temporarily fixing agent for semiconductor wafer and method for producing semiconductor device using the same
US9057951B2 (en) * 2009-08-26 2015-06-16 International Business Machines Corporation Chemically amplified photoresist composition and process for its use
US8632948B2 (en) 2009-09-30 2014-01-21 Az Electronic Materials Usa Corp. Positive-working photoimageable bottom antireflective coating
EP2363749B1 (de) 2010-03-05 2015-08-19 Rohm and Haas Electronic Materials, L.L.C. Verfahren zur Formung photolithographischer Strukturen
IL213195A0 (en) 2010-05-31 2011-07-31 Rohm & Haas Elect Mat Photoresist compositions and emthods of forming photolithographic patterns
US8853856B2 (en) 2010-06-22 2014-10-07 International Business Machines Corporation Methodology for evaluation of electrical characteristics of carbon nanotubes
US8449781B2 (en) 2010-06-22 2013-05-28 International Business Machines Corporation Selective etch back process for carbon nanotubes intergration
US8475667B2 (en) 2010-06-22 2013-07-02 International Business Machines Corporation Method of patterning photosensitive material on a substrate containing a latent acid generator
KR101071401B1 (ko) 2010-07-07 2011-10-07 주식회사 엘지화학 광반응성 노보넨계 공중합체, 이의 제조 방법 및 이를 포함하는 배향막
JP2012103679A (ja) 2010-09-10 2012-05-31 Rohm & Haas Electronic Materials Llc フォトレジスト組成物およびフォトリソグラフィパターンを形成する方法
US8946366B2 (en) 2010-09-27 2015-02-03 Lg Chem, Ltd. Cyclic olefin compound, photoreactive polymer, and alignment layer comprising the same
US9150678B2 (en) 2010-09-27 2015-10-06 Lg Chem, Ltd. Photoreactive polymer and alignment layer comprising the same
JP5947028B2 (ja) 2010-12-02 2016-07-06 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ ポリマー、フォトレジスト組成物、およびフォトリソグラフィパターンを形成する方法
EP2472324A1 (de) 2010-12-31 2012-07-04 Rohm and Haas Electronic Materials LLC Monomere, Polymere, Photoresistzusammensetzungen und Verfahren zur Bildung von photolithographischen Strukturen
EP2472325A1 (de) 2010-12-31 2012-07-04 Rohm and Haas Electronic Materials LLC Polymere, lichtbeständige Zusammensetzungen und Verfahren zum Bilden von fotolithografischen Strukturen
EP2472326A1 (de) 2010-12-31 2012-07-04 Rohm and Haas Electronic Materials LLC Polymere, Fotoresistzusammensetzungen und Verfahren zur Herstellung von Fotolithographischen Mustern
RU2584204C2 (ru) * 2011-01-25 2016-05-20 Басф Се Применение поверхностно-активных веществ, содержащих по меньшей мере три короткоцепочечные перфторированные группы, для производства микросхем, имеющих рисунки с расстояниями между линиями менее 50 нм
JP5952029B2 (ja) 2011-02-28 2016-07-13 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ フォトレジスト組成物、およびフォトリソグラフィパターンを形成する方法
EP2492753A2 (de) 2011-02-28 2012-08-29 Rohm and Haas Electronic Materials LLC Entwicklerzusammensetzungen und Verfahren zum Bilden von fotolithografischen Strukturen
EP2492749A1 (de) 2011-02-28 2012-08-29 Rohm and Haas Electronic Materials LLC Lichtbeständige Zusammensetzungen und Verfahren zum Bilden von fotolithografischen Strukturen
KR101785115B1 (ko) 2011-04-27 2017-10-13 엘지디스플레이 주식회사 화학증폭형 포토레지스트용 중합체 및 이를 포함한 포토 레지스트 조성물
CA2875864A1 (en) 2011-07-01 2013-01-10 Evgueni E. Nesterov Controlled radical polymerization, and catalysts useful therein
US8716421B2 (en) 2012-06-25 2014-05-06 Promerus, Llc Norbornene-type formate monomers and polymers and optical waveguides formed therefrom
KR102182234B1 (ko) 2012-07-31 2020-11-24 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 포토레지스트 조성물 및 포토리소그래픽 패턴의 형성 방법
CN104540798B (zh) * 2012-08-07 2016-12-21 住友电木株式会社 环烷基降冰片烯单体、衍生自其的聚合物和它们在渗透蒸发中的用途
US9017934B2 (en) 2013-03-08 2015-04-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist defect reduction system and method
US9354521B2 (en) 2013-03-12 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9256128B2 (en) 2013-03-12 2016-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing semiconductor device
US8932799B2 (en) 2013-03-12 2015-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9502231B2 (en) 2013-03-12 2016-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist layer and method
US9175173B2 (en) 2013-03-12 2015-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Unlocking layer and method
US9245751B2 (en) 2013-03-12 2016-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-reflective layer and method
US9543147B2 (en) 2013-03-12 2017-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of manufacture
US9110376B2 (en) 2013-03-12 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9117881B2 (en) 2013-03-15 2015-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Conductive line system and process
JP6186168B2 (ja) * 2013-05-02 2017-08-23 富士フイルム株式会社 パターン形成方法、及び電子デバイスの製造方法
US9341945B2 (en) 2013-08-22 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of formation and use
US9772558B2 (en) 2013-09-24 2017-09-26 International Business Machines Corporation Sulfonic acid ester containing polymers for organic solvent based dual-tone photoresists
CN104516200B (zh) * 2013-10-07 2019-10-18 东友精细化工有限公司 着色固化性树脂组合物
US10036953B2 (en) 2013-11-08 2018-07-31 Taiwan Semiconductor Manufacturing Company Photoresist system and method
US10095113B2 (en) 2013-12-06 2018-10-09 Taiwan Semiconductor Manufacturing Company Photoresist and method
US9761449B2 (en) 2013-12-30 2017-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Gap filling materials and methods
US9383646B2 (en) * 2014-02-24 2016-07-05 Irresistible Materials Ltd Two-step photoresist compositions and methods
US9599896B2 (en) 2014-03-14 2017-03-21 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9581908B2 (en) 2014-05-16 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method
JP6271378B2 (ja) * 2014-09-05 2018-01-31 信越化学工業株式会社 導電性ポリマー用高分子化合物及びその製造方法
KR101746789B1 (ko) 2014-12-18 2017-06-13 주식회사 엘지화학 고리형 올레핀 화합물의 (공)중합체를 포함하는 수직 배향막
KR101785426B1 (ko) 2015-04-30 2017-10-17 롬엔드하스전자재료코리아유한회사 포토레지스트 조성물 및 방법
US9545011B2 (en) * 2015-05-13 2017-01-10 International Business Machines Corporation Dry film solder mask composite laminate materials
TWI636326B (zh) 2015-05-15 2018-09-21 南韓商羅門哈斯電子材料韓國公司 光鹼產生劑及包括其的光致抗蝕劑組成物
TWI672562B (zh) 2015-09-30 2019-09-21 南韓商羅門哈斯電子材料韓國公司 光致抗蝕劑組合物及方法
KR102172939B1 (ko) * 2016-07-28 2020-11-03 스미토모 베이클리트 컴퍼니 리미티드 무수나드산 중합체 및 그로부터 유래한 감광성 조성물
JP6730417B2 (ja) 2017-12-31 2020-07-29 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ フォトレジスト組成物および方法
JP2021532179A (ja) 2018-07-19 2021-11-25 リントフィールド リミテッド 光開始剤
EP4011613A4 (de) 2019-08-06 2023-08-09 RIMTEC Corporation Polymerisierbare zusammensetzung, cycloolefinbasiertes polymer und metall/harz-verbundstoff
GB202000736D0 (en) 2020-01-17 2020-03-04 Lintfield Ltd Modified thioxanthone photoinitators
US11874603B2 (en) 2021-09-15 2024-01-16 Rohm And Haas Electronic Materials Korea Ltd. Photoresist composition comprising amide compound and pattern formation methods using the same

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4491628A (en) * 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
US5155188A (en) * 1988-12-29 1992-10-13 The B. F. Goodrich Company Oxide cocatalysts in ring opening polymerization of polycycloolefins
JP3000745B2 (ja) * 1991-09-19 2000-01-17 富士通株式会社 レジスト組成物とレジストパターンの形成方法
JPH05297591A (ja) * 1992-04-20 1993-11-12 Fujitsu Ltd ポジ型放射線レジストとレジストパターンの形成方法
DE4319178C2 (de) * 1992-06-10 1997-07-17 Fujitsu Ltd Resist-Zusammensetzung enthaltend ein Polymermaterial und einen Säuregenerator
JPH06110214A (ja) * 1992-09-28 1994-04-22 Fujitsu Ltd レジストパターンの形成方法
DE59306590D1 (de) * 1992-12-04 1997-07-03 Ocg Microelectronic Materials Positiv-Photoresist mit verbesserten Prozesseigenschaften
US5372912A (en) * 1992-12-31 1994-12-13 International Business Machines Corporation Radiation-sensitive resist composition and process for its use
US5468819A (en) * 1993-11-16 1995-11-21 The B.F. Goodrich Company Process for making polymers containing a norbornene repeating unit by addition polymerization using an organo (nickel or palladium) complex
JPH07191463A (ja) * 1993-12-27 1995-07-28 Fujitsu Ltd レジストおよびこれを使った半導体装置の製造方法
JP2770740B2 (ja) * 1994-07-14 1998-07-02 日本電気株式会社 橋かけ環式アルキル基を有するスルホニウム塩化合物および光酸発生剤
JP2856116B2 (ja) * 1995-01-26 1999-02-10 日本電気株式会社 ビニルモノマー、重合体、フォトレジスト組成物、及びそれを用いたパターン形成方法
US5705503A (en) * 1995-05-25 1998-01-06 Goodall; Brian Leslie Addition polymers of polycycloolefins containing functional substituents
JP3804138B2 (ja) * 1996-02-09 2006-08-02 Ｊｓｒ株式会社 ＡｒＦエキシマレーザー照射用感放射線性樹脂組成物
JPH09230595A (ja) * 1996-02-26 1997-09-05 Nippon Zeon Co Ltd レジスト組成物およびその利用
DE69733469T2 (de) 1996-03-07 2006-03-23 Sumitomo Bakelite Co. Ltd. Photoresist zusammensetzungen mit polycyclischen polymeren mit säurelabilen gruppen am ende
US5843624A (en) * 1996-03-08 1998-12-01 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
KR100261022B1 (ko) * 1996-10-11 2000-09-01 윤종용 화학증폭형 레지스트 조성물

Also Published As

Publication number Publication date
JP2000508080A (ja) 2000-06-27
AU725653B2 (en) 2000-10-19
KR100536824B1 (ko) 2006-03-09
WO1997033198A1 (en) 1997-09-12
AU2327297A (en) 1997-09-22
US6790579B1 (en) 2004-09-14
DE69733469T2 (de) 2006-03-23
MY127927A (en) 2006-12-29
DE69733469D1 (de) 2005-07-14
US20020136982A1 (en) 2002-09-26
RU2194295C2 (ru) 2002-12-10
EP0885405B1 (de) 2005-06-08
HK1017442A1 (en) 1999-11-19
JP3962432B2 (ja) 2007-08-22
TW457401B (en) 2001-10-01
CN1198181C (zh) 2005-04-20
EP0885405A1 (de) 1998-12-23
US6136499A (en) 2000-10-24
KR19990087581A (ko) 1999-12-27
CN1216618A (zh) 1999-05-12

Similar Documents

Publication Publication Date Title
ATE297562T1 (de) Photoresist zusammensetzungen mit polycyclischen polymeren mit säurelabilen gruppen am ende
WO1999014256A8 (en) Photoresist compositions comprising polycyclic polymers with acid labile pendant groups
MY123980A (en) Photoresist compositions comprising polycyclic polymers with acid labile pendant groups
EP0894622A3 (de) Positiv arbeitende lichtempfindliche Zusammensetzung für Infrarot Laser Aufzeichnung
DE69628996D1 (de) Polymerzusammensetzung und Rezistmaterial
BR9814680A (pt) Gels superabsorventes com base em poli (vinilamina), e método para manufaturar o mesmo
CO5111043A1 (es) Peliculas que comprenden copolimeros de polihidroxialcanoatos (pha) que comprenden por lo menos dos unidades monomericas que se repiten aleatoriamente
KR970062810A (ko) 감방사선성 수지 조성물
ES2052573T3 (es) Particulas polimericas, su fabricacion y utilizaciones.
KR950019896A (ko) 방사선 감응성 수지 조성물
DE69402924T2 (de) Hydrophobe Dispergiermitteln verwendet in der Herstellung von Polymer-Dispersionen
ATE542837T1 (de) Polycyclische resistzusammensetzungen mit verbesserter ätzbeständigkeit
CO5111040A1 (es) Copolimeros de polihidroxialcanoatos (pha) biodegradables que comprenden por lo menos dos unidades monomericas que se repiten aleatoriamente
KR870011507A (ko) 카르복시 벤조트리아졸을 함유한 감광성 조성물
ES517356A0 (es) Un procedimiento para la preparacion de una composicion endurecible de los componentes a base de derivados vinilicos.
DE69121198T2 (de) Hochleitfähige polymere-dickfilmzusammensetzungen
DE69123811D1 (de) Die Polymerisation an der Grenzfläche steuernde Polymerisationsinitiatorzusammensetzung und diese enthaltende härtbare Zusammensetzung
MY122873A (en) Resist compositions with polymers having pendant groups containing plural acid labile moieties.
NL1012916A1 (nl) Nieuw fotoresistmonomeer met hydroxygroep en carboxylgroep, copolymeer daarvan en fotoresistcompositie waarin dit gebruikt wordt.
DE69229419T2 (de) Photoempfindliche Polymerzusammensetzung
ATE251647T1 (de) Wärmeformbare acrylfolie
NL7416871A (nl) Werkwijze voor de verbetering van de stabiliteit hitte en licht van halogeenbevattende poly- harsen alsmede de daarbij gebruikte stabili- iddelen.
DE59606441D1 (de) Photoempfindliche zusammensetzung
BR9204371A (pt) Mistura sensivel a luz e material de copla sensivel a luz
BE886033A (fr) Compositions a base de polyethylene chlorosulfone et de polymeres butadiene-acrylonitrile carboxyles

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties