KR970062810A - 감방사선성 수지 조성물 - Google Patents

감방사선성 수지 조성물 Download PDF

Info

Publication number
KR970062810A
KR970062810A KR1019970003815A KR19970003815A KR970062810A KR 970062810 A KR970062810 A KR 970062810A KR 1019970003815 A KR1019970003815 A KR 1019970003815A KR 19970003815 A KR19970003815 A KR 19970003815A KR 970062810 A KR970062810 A KR 970062810A
Authority
KR
South Korea
Prior art keywords
radiation
resin composition
sensitive resin
sensitive
acid generator
Prior art date
Application number
KR1019970003815A
Other languages
English (en)
Other versions
KR100545617B1 (ko
Inventor
미쯔히또 수와
도루 가지따
신이찌로 이와나가
도시유끼 오따
Original Assignee
마쯔모또 에이찌
니혼 고오세이 고무 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=27292808&utm_source=***_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR970062810(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 마쯔모또 에이찌, 니혼 고오세이 고무 가부시끼가이샤 filed Critical 마쯔모또 에이찌
Publication of KR970062810A publication Critical patent/KR970062810A/ko
Application granted granted Critical
Publication of KR100545617B1 publication Critical patent/KR100545617B1/ko

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
    • C08G61/04—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms
    • C08G61/06—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms prepared by ring-opening of carbocyclic compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/01—Sulfonic acids
    • C07C309/02—Sulfonic acids having sulfo groups bound to acyclic carbon atoms
    • C07C309/23—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an unsaturated carbon skeleton containing rings other than six-membered aromatic rings
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/30—Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
    • C08G61/04—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms
    • C08G61/06—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms prepared by ring-opening of carbocyclic compounds
    • C08G61/08—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms prepared by ring-opening of carbocyclic compounds of carbocyclic compounds containing one or more carbon-to-carbon double bonds in the ring
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L65/00—Compositions of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Compositions of derivatives of such polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Materials For Photolithography (AREA)

Abstract

화학 증폭형 레지스트로서, 특히 방사선에 대한 투명성 및 드라이 엣칭 내성이 우수하고, 더욱이 기판 접착성, 강도, 해상도 및 현상성 등도 우수한 레지스트 패턴을 제공하는 감광사선상 수지 조성물을 제공한다. 감방사선성 조성물은, (A) 주쇄에 지환식 골격을 가지는 수지와, (B) 감방사선상 산발생제를 함유한다.

Description

감방사선성 수지 조성물
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (1)

  1. (A) 주쇄에 지환식 골격을 가지는 수지와, (B) 방사선의 조사에 의해 산을 발생하는 감방사선성 산발생제를 함유하는 것을 특징으로 하는 감방사선성 수지 조성물.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019970003815A 1996-02-09 1997-02-06 감방사선성수지조성물 KR100545617B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP4693096 1996-02-09
JP96-46930 1996-02-09
JP22734496 1996-08-12
JP96-227344 1996-08-12
JP35262196A JP3804138B2 (ja) 1996-02-09 1996-12-16 ＡｒＦエキシマレーザー照射用感放射線性樹脂組成物
JP96-352621 1996-12-16

Publications (2)

Publication Number Publication Date
KR970062810A true KR970062810A (ko) 1997-09-12
KR100545617B1 KR100545617B1 (ko) 2006-11-30

Family

ID=27292808

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970003815A KR100545617B1 (ko) 1996-02-09 1997-02-06 감방사선성수지조성물

Country Status (5)

Country Link
US (1) US6727032B1 (ko)
EP (2) EP0789278B1 (ko)
JP (1) JP3804138B2 (ko)
KR (1) KR100545617B1 (ko)
DE (2) DE69736024T2 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100733855B1 (ko) * 2000-01-17 2007-06-29 후지필름 가부시키가이샤 포지티브 포토레지스트 조성물

Families Citing this family (99)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6232417B1 (en) * 1996-03-07 2001-05-15 The B. F. Goodrich Company Photoresist compositions comprising polycyclic polymers with acid labile pendant groups
EP0885405B1 (en) * 1996-03-07 2005-06-08 Sumitomo Bakelite Co., Ltd. Photoresist compositions comprising polycyclic polymers with acid labile pendant groups
US5879857A (en) * 1997-02-21 1999-03-09 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
KR100245410B1 (ko) * 1997-12-02 2000-03-02 윤종용 감광성 폴리머 및 그것을 이용한 화학증폭형 레지스트 조성물
KR100265597B1 (ko) * 1996-12-30 2000-09-15 김영환 Arf 감광막 수지 및 그 제조방법
KR100220953B1 (ko) 1996-12-31 1999-10-01 김영환 아미드 또는 이미드를 도입한 ArF 감광막 수지
KR100225956B1 (ko) * 1997-01-10 1999-10-15 김영환 아민을 도입한 에이알에프 감광막 수지
KR100195583B1 (ko) * 1997-04-08 1999-06-15 박찬구 양성 포토레지스트 제조용 공중합체 및 이를 함유하는 화학증폭형 양성 포토레지스트 조성물
DE69821049T2 (de) * 1997-05-09 2004-10-21 Fuji Photo Film Co Ltd Positiv arbeitende lichtempfindliche Zusammensetzung
EP0878738B1 (en) 1997-05-12 2002-01-09 Fuji Photo Film Co., Ltd. Positive resist composition
RU2199773C2 (ru) * 1997-09-12 2003-02-27 З Би. Эф. Гудрич Кампэни Фоторезистная композиция
KR100321080B1 (ko) * 1997-12-29 2002-11-22 주식회사 하이닉스반도체 공중합체수지와이의제조방법및이수지를이용한포토레지스트
KR100334387B1 (ko) * 1997-12-31 2002-11-22 주식회사 하이닉스반도체 공중합체수지와그제조방법및이수지를이용한포토레지스트
EP0930541A1 (en) * 1998-01-16 1999-07-21 JSR Corporation Radiation sensitive resin composition
JP3865919B2 (ja) * 1998-02-03 2007-01-10 富士フイルムホールディングス株式会社 ネガ型フォトレジスト組成物
JPH11231541A (ja) * 1998-02-17 1999-08-27 Daicel Chem Ind Ltd 放射線感光材料及びそれを使用したパターン形成方法
ATE542837T1 (de) * 1998-02-23 2012-02-15 Sumitomo Bakelite Co Polycyclische resistzusammensetzungen mit verbesserter ätzbeständigkeit
DE69916434T2 (de) * 1998-02-23 2005-03-24 Sumitomo Bakelite Co. Ltd. Modifizierte polycyclische polymere
JP3847454B2 (ja) * 1998-03-20 2006-11-22 富士写真フイルム株式会社 遠紫外線露光用ポジ型フォトレジスト組成物及びパターン形成方法
EP0952489B1 (en) 1998-04-22 2014-08-13 FUJIFILM Corporation Positive photosensitive resin composition
EP0952166B1 (de) 1998-04-24 2003-06-25 Infineon Technologies AG Filmbildende Polymere
DE59908549D1 (de) * 1998-04-24 2004-03-25 Infineon Technologies Ag Strahlungsempfindliches Gemisch und dessen Verwendung
KR19990081722A (ko) 1998-04-30 1999-11-15 김영환 카르복실기 함유 지환족 유도체 및 그의 제조방법
KR100376983B1 (ko) 1998-04-30 2003-08-02 주식회사 하이닉스반도체 포토레지스트중합체및이를이용한미세패턴의형성방법
JP3844322B2 (ja) * 1998-07-02 2006-11-08 富士写真フイルム株式会社 遠紫外線露光用ポジ型フォトレジスト組成物
US7579308B2 (en) * 1998-07-06 2009-08-25 Ekc/Dupont Electronics Technologies Compositions and processes for photoresist stripping and residue removal in wafer level packaging
KR100403325B1 (ko) 1998-07-27 2004-03-24 주식회사 하이닉스반도체 포토레지스트중합체및이를이용한포토레지스트조성물
JP3587743B2 (ja) 1998-08-26 2004-11-10 株式会社ハイニックスセミコンダクター フォトレジスト単量体とその製造方法、フォトレジスト共重合体とその製造方法、フォトレジスト組成物、フォトレジストパターン形成方法、および、半導体素子。
KR20000015014A (ko) 1998-08-26 2000-03-15 김영환 신규의 포토레지스트용 단량체, 중합체 및 이를 이용한 포토레지스트 조성물
US6569971B2 (en) 1998-08-27 2003-05-27 Hyundai Electronics Industries Co., Ltd. Polymers for photoresist and photoresist compositions using the same
US6849377B2 (en) 1998-09-23 2005-02-01 E. I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
KR100271420B1 (ko) * 1998-09-23 2001-03-02 박찬구 화학증폭형 양성 포토레지스트 조성물
IL141803A0 (en) 1998-09-23 2002-03-10 Du Pont Photoresists, polymers and processes for microlithography
KR100274119B1 (ko) * 1998-10-08 2001-03-02 박찬구 감방사선성 레지스트 제조용 중합체 및 이를 함유하는 레지스트조성물
US6884562B1 (en) 1998-10-27 2005-04-26 E. I. Du Pont De Nemours And Company Photoresists and processes for microlithography
EP1141777B1 (en) * 1998-10-27 2009-01-07 E.I. Du Pont De Nemours And Company Photoresists and processes for microlithography
JP3680920B2 (ja) * 1999-02-25 2005-08-10 信越化学工業株式会社 新規なエステル化合物、高分子化合物、レジスト材料、及びパターン形成方法
JP4402304B2 (ja) * 1999-05-04 2010-01-20 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー フッ素化ポリマー、フォトレジストおよびミクロリソグラフィーのための方法
US6790587B1 (en) 1999-05-04 2004-09-14 E. I. Du Pont De Nemours And Company Fluorinated polymers, photoresists and processes for microlithography
US6787283B1 (en) 1999-07-22 2004-09-07 Fuji Photo Film Co., Ltd. Positive photoresist composition for far ultraviolet exposure
KR100682169B1 (ko) * 1999-07-30 2007-02-12 주식회사 하이닉스반도체 신규의 포토레지스트용 공중합체 및 이를 이용한 포토레지스트조성물
KR100535149B1 (ko) * 1999-08-17 2005-12-07 주식회사 하이닉스반도체 신규의 포토레지스트용 공중합체 및 이를 이용한 포토레지스트조성물
JP3955419B2 (ja) * 1999-10-20 2007-08-08 富士フイルム株式会社 遠紫外線露光用ポジ型フォトレジスト組成物
JP2004500596A (ja) 1999-11-17 2004-01-08 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー ニトリル／フルオロアルコールポリマー含有フォトレジストおよび関連するミクロリソグラフィのための方法
US6365322B1 (en) * 1999-12-07 2002-04-02 Clariant Finance (Bvi) Limited Photoresist composition for deep UV radiation
KR20010088333A (ko) * 2000-02-16 2001-09-26 카나가와 치히로 고분자 화합물, 레지스트 재료 및 패턴 형성 방법
US6538086B1 (en) * 2000-02-28 2003-03-25 Industrial Technology Research Institute Polymer with a pericyclic protective group and resist composition containing the same
TW588220B (en) 2000-04-04 2004-05-21 Daikin Ind Ltd Novel fluorine-containing polymer having group reactive with acid and chemically amplifying type photo resist composition prepared by using same
JP4780262B2 (ja) * 2000-04-27 2011-09-28 信越化学工業株式会社 高分子化合物、化学増幅レジスト材料及びパターン形成方法
US6951705B2 (en) 2000-05-05 2005-10-04 E. I. Du Pont De Nemours And Company Polymers for photoresist compositions for microlithography
JP3972568B2 (ja) * 2000-05-09 2007-09-05 住友化学株式会社 化学増幅型ポジ型レジスト組成物及びスルホニウム塩
TWI286664B (en) * 2000-06-23 2007-09-11 Sumitomo Chemical Co Chemical amplification type positive resist composition and sulfonium salt
KR100506882B1 (ko) * 2000-07-13 2005-08-08 주식회사 하이닉스반도체 Ｔｉｐｓ용 포토레지스트 중합체 및 이를 함유하는포토레지스트 조성물
JP4747399B2 (ja) * 2000-07-31 2011-08-17 Ｊｓｒ株式会社 脂環族系重合体中の金属除去方法
US6664022B1 (en) 2000-08-25 2003-12-16 Shipley Company, L.L.C. Photoacid generators and photoresists comprising same
JP4378872B2 (ja) 2000-11-15 2009-12-09 日本電気株式会社 光酸発生剤、化学増幅レジスト組成物、およびそれを用いたパターン形成方法
US6777160B2 (en) 2001-03-12 2004-08-17 Fuji Photo Film Co., Ltd. Positive-working resist composition
WO2002084401A2 (en) * 2001-03-22 2002-10-24 Shipley Company, L.L.C. Photoresist compositions comprising solvents for short wavelength imaging
AU2002254232A1 (en) 2001-03-22 2002-10-08 Shipley Company, L.L.C. Photoresist composition
KR100876047B1 (ko) * 2001-03-29 2008-12-26 오사까 가스 가부시키가이샤 광활성 화합물 및 감광성 수지 조성물
KR20020082006A (ko) * 2001-04-23 2002-10-30 금호석유화학 주식회사 신규한 산-민감성 중합체 및 이를 함유하는 레지스트 조성물
US7192681B2 (en) * 2001-07-05 2007-03-20 Fuji Photo Film Co., Ltd. Positive photosensitive composition
EP1413927A4 (en) * 2001-07-12 2006-06-21 Semiconductor Leading Edge Tec METHOD FOR FORMING A FINAL MOTIF
JP4862979B2 (ja) * 2001-08-27 2012-01-25 日産化学工業株式会社 脂環式含酸素化合物及びその製造法
US6723488B2 (en) 2001-11-07 2004-04-20 Clariant Finance (Bvi) Ltd Photoresist composition for deep UV radiation containing an additive
US7205086B2 (en) * 2001-11-26 2007-04-17 E. I. Du Pont De Nemours And Company Multilayer elements containing photoresist compositions and their use in microlithography
US7543592B2 (en) * 2001-12-04 2009-06-09 Ekc Technology, Inc. Compositions and processes for photoresist stripping and residue removal in wafer level packaging
EP1461373B1 (en) * 2001-12-12 2007-02-21 Sumitomo Bakelite Co., Ltd. Polymeric compositions and uses therefore
US7138218B2 (en) 2001-12-18 2006-11-21 Hynix Semiconductor Inc. Process for forming an ultra fine pattern using a bottom anti-reflective coating film containing an acid generator
US6800416B2 (en) 2002-01-09 2004-10-05 Clariant Finance (Bvi) Ltd. Negative deep ultraviolet photoresist
US20030235775A1 (en) 2002-06-13 2003-12-25 Munirathna Padmanaban Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds
US7264913B2 (en) 2002-11-21 2007-09-04 Az Electronic Materials Usa Corp. Antireflective compositions for photoresists
TWI295410B (en) * 2002-11-29 2008-04-01 Zeon Corp Radiation-sensitive resin composition
US20040166434A1 (en) * 2003-02-21 2004-08-26 Dammel Ralph R. Photoresist composition for deep ultraviolet lithography
KR20050098955A (ko) * 2003-02-21 2005-10-12 에이제트 일렉트로닉 머트리얼즈 유에스에이 코프. 원자외선 리소그래피용 포토레지스트 조성물
US7338742B2 (en) 2003-10-08 2008-03-04 Hynix Semiconductor Inc. Photoresist polymer and photoresist composition containing the same
US7270937B2 (en) 2003-10-17 2007-09-18 Hynix Semiconductor Inc. Over-coating composition for photoresist and process for forming photoresist pattern using the same
JP4140506B2 (ja) * 2003-10-28 2008-08-27 Ｊｓｒ株式会社 感放射線性樹脂組成物
KR100680405B1 (ko) 2003-11-19 2007-02-08 주식회사 하이닉스반도체 Ｅｕｖ용 포토레지스트 조성물 및 이를 이용한포토레지스트 패턴 형성 방법
US20050164122A1 (en) * 2004-01-26 2005-07-28 Matsushita Electric Industrial Co., Ltd. Chemically amplified resist and pattern formation method
US7081511B2 (en) 2004-04-05 2006-07-25 Az Electronic Materials Usa Corp. Process for making polyesters
JP2005336141A (ja) * 2004-05-31 2005-12-08 Mitsubishi Chemicals Corp アクリル酸の製造方法
US7691556B2 (en) * 2004-09-15 2010-04-06 Az Electronic Materials Usa Corp. Antireflective compositions for photoresists
US7553905B2 (en) 2005-10-31 2009-06-30 Az Electronic Materials Usa Corp. Anti-reflective coatings
US20090042133A1 (en) * 2007-08-10 2009-02-12 Zhong Xiang Antireflective Coating Composition
JP5642351B2 (ja) * 2008-03-05 2014-12-17 Jsr株式会社 射出成形体よりなる光学部品および樹脂組成物
US20100136477A1 (en) 2008-12-01 2010-06-03 Ng Edward W Photosensitive Composition
US20110048931A1 (en) * 2009-08-25 2011-03-03 Makarov Vladimir V FIB Process for Selective and Clean Etching of Copper
US8475667B2 (en) 2010-06-22 2013-07-02 International Business Machines Corporation Method of patterning photosensitive material on a substrate containing a latent acid generator
US8449781B2 (en) 2010-06-22 2013-05-28 International Business Machines Corporation Selective etch back process for carbon nanotubes intergration
US8853856B2 (en) 2010-06-22 2014-10-07 International Business Machines Corporation Methodology for evaluation of electrical characteristics of carbon nanotubes
CN103454857B (zh) * 2012-05-31 2020-01-03 住友化学株式会社 光致抗蚀剂组合物
KR101746789B1 (ko) 2014-12-18 2017-06-13 주식회사 엘지화학 고리형 올레핀 화합물의 (공)중합체를 포함하는 수직 배향막
US11048168B2 (en) 2015-11-30 2021-06-29 Promerus, Llc Permanent dielectric compositions containing photoacid generator and base
WO2017095829A2 (en) * 2015-11-30 2017-06-08 Promerus, Llc Permanent dielectric compositions containing photoacid generator and base
CN109110759A (zh) * 2018-11-07 2019-01-01 河南师范大学 一种氮、硼共掺杂多孔碳材料的制备方法
JP6777275B1 (ja) * 2019-05-08 2020-10-28 住友ベークライト株式会社 感光性樹脂組成物、樹脂膜および電子装置
WO2020226052A1 (ja) * 2019-05-08 2020-11-12 住友ベークライト株式会社 感光性樹脂組成物、樹脂膜および電子装置
CN114303098A (zh) * 2019-08-29 2022-04-08 富士胶片株式会社 感光化射线性或感放射线性树脂组合物、感光化射线性或感放射线性膜、图案形成方法及电子器件的制造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
JPH0612452B2 (ja) 1982-09-30 1994-02-16 ブリュ−ワ−・サイエンス・インコ−ポレイテッド 集積回路素子の製造方法
JPH01197460A (ja) * 1988-02-01 1989-08-09 Japan Synthetic Rubber Co Ltd 環式不飽和カルボン酸エステルおよびその製造法並びに重合体およびその製造法
US5155188A (en) * 1988-12-29 1992-10-13 The B. F. Goodrich Company Oxide cocatalysts in ring opening polymerization of polycycloolefins
JP2648805B2 (ja) 1990-04-24 1997-09-03 インターナショナル・ビジネス・マシーンズ・コーポレイション 液体適用型の水性処理可能なホトレジスト組成物
DE69214035T2 (de) 1991-06-28 1997-04-10 Ibm Reflexionsverminderde Überzüge
JP3000745B2 (ja) * 1991-09-19 2000-01-17 富士通株式会社 レジスト組成物とレジストパターンの形成方法
JPH05297591A (ja) * 1992-04-20 1993-11-12 Fujitsu Ltd ポジ型放射線レジストとレジストパターンの形成方法
DE4319178C2 (de) * 1992-06-10 1997-07-17 Fujitsu Ltd Resist-Zusammensetzung enthaltend ein Polymermaterial und einen Säuregenerator
JPH06110214A (ja) * 1992-09-28 1994-04-22 Fujitsu Ltd レジストパターンの形成方法
EP0601974B1 (de) * 1992-12-04 1997-05-28 OCG Microelectronic Materials Inc. Positiv-Photoresist mit verbesserten Prozesseigenschaften
US5468819A (en) * 1993-11-16 1995-11-21 The B.F. Goodrich Company Process for making polymers containing a norbornene repeating unit by addition polymerization using an organo (nickel or palladium) complex
JPH07191463A (ja) * 1993-12-27 1995-07-28 Fujitsu Ltd レジストおよびこれを使った半導体装置の製造方法
JP2770740B2 (ja) * 1994-07-14 1998-07-02 日本電気株式会社 橋かけ環式アルキル基を有するスルホニウム塩化合物および光酸発生剤
JP2856116B2 (ja) * 1995-01-26 1999-02-10 日本電気株式会社 ビニルモノマー、重合体、フォトレジスト組成物、及びそれを用いたパターン形成方法
EP0885405B1 (en) * 1996-03-07 2005-06-08 Sumitomo Bakelite Co., Ltd. Photoresist compositions comprising polycyclic polymers with acid labile pendant groups

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100733855B1 (ko) * 2000-01-17 2007-06-29 후지필름 가부시키가이샤 포지티브 포토레지스트 조성물

Also Published As

Publication number Publication date
DE69736024D1 (de) 2006-07-06
EP0789278A2 (en) 1997-08-13
EP1441256B1 (en) 2006-05-31
DE69733164D1 (de) 2005-06-09
EP0789278B1 (en) 2005-05-04
EP0789278A3 (ko) 1997-09-10
JPH10111569A (ja) 1998-04-28
DE69736024T2 (de) 2006-11-23
EP1441256A1 (en) 2004-07-28
DE69733164T2 (de) 2006-02-16
KR100545617B1 (ko) 2006-11-30
US6727032B1 (en) 2004-04-27
JP3804138B2 (ja) 2006-08-02

Similar Documents

Publication Publication Date Title
KR970062810A (ko) 감방사선성 수지 조성물
KR890013737A (ko) 감방사선성 수지 조성물
KR950019945A (ko) 감방사선성 수지 조성물
KR950019896A (ko) 방사선 감응성 수지 조성물
ATE272095T1 (de) Lithopraphische druckplatte mit hohem chemischen widerstand
EP0855267A3 (en) Planographic printing plate
MY122529A (en) Photosensitive resin composition
MX9207310A (es) Revestimiento de multicapas, con su procedimiento de obtencion y su aplicacion.
FI963133A (fi) Dispersiolattialiima
KR930020218A (ko) 방사선 감수성 조성물
DE3751465D1 (de) Elektronische Schreibmaschine mit Rechtschreibungsprüffunktion.
ATE226744T1 (de) Integrierte schaltkreisanordnung welche gegen angriffe durch kontrollierte zerstörung einer komplementären schicht gesichert ist
ATE481430T1 (de) Acrylcopolymer und strahlungsempfindliche harzzusammensetzung
JPS5324782A (en) Forming method of high molecular film patterns by negative resist
KR900003686A (ko) 포지티브-워킹 레지스트조성물용 현상액
DE68908304D1 (de) Photopolymerisierbare harzzusammensetzung auf waessriger grundlage.
KR910005101A (ko) 레지스트패턴 형성방법
Weber-Wulff Contributions to Mechanical Proofs of Correctness for Compiler Front-Ends
KR970078833A (ko) 음형(negative type)화학증폭 레지스트용 조성물
Brunsvold et al. Acid sensitive Novolak resists.
KR910008490A (ko) 방사선 민감성 포지티브 레지스트 조성물
KR870001275A (ko) 표면 처리제
KR910012872A (ko) 워치도그 기능을 구비한 리세트회로
KR970020464A (ko) 계절적 경시변화가 없는 스탬핑 호일
KR900016412A (ko) 타일 접착제

Legal Events

Date Code Title Description
A201 Request for examination
AMND Amendment
E902 Notification of reason for refusal
AMND Amendment
E902 Notification of reason for refusal
AMND Amendment
E601 Decision to refuse application
J201 Request for trial against refusal decision
AMND Amendment
B701 Decision to grant
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20121227

Year of fee payment: 8

FPAY Annual fee payment

Payment date: 20131218

Year of fee payment: 9

FPAY Annual fee payment

Payment date: 20141230

Year of fee payment: 10

LAPS Lapse due to unpaid annual fee