KR101025438B1 - 전력용 반도체 장치 - Google Patents
전력용 반도체 장치 Download PDFInfo
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- KR101025438B1 KR101025438B1 KR1020087022914A KR20087022914A KR101025438B1 KR 101025438 B1 KR101025438 B1 KR 101025438B1 KR 1020087022914 A KR1020087022914 A KR 1020087022914A KR 20087022914 A KR20087022914 A KR 20087022914A KR 101025438 B1 KR101025438 B1 KR 101025438B1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 110
- 229910052751 metal Inorganic materials 0.000 claims abstract description 158
- 239000002184 metal Substances 0.000 claims abstract description 158
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 34
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 33
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 22
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 20
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 16
- 229910052802 copper Inorganic materials 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims description 11
- 238000006243 chemical reaction Methods 0.000 abstract description 13
- 239000007769 metal material Substances 0.000 abstract description 9
- 239000010410 layer Substances 0.000 description 157
- 239000010408 film Substances 0.000 description 103
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 103
- 229910010271 silicon carbide Inorganic materials 0.000 description 103
- 239000010936 titanium Substances 0.000 description 36
- 239000011229 interlayer Substances 0.000 description 31
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 28
- 239000010949 copper Substances 0.000 description 25
- 238000010586 diagram Methods 0.000 description 24
- 239000000463 material Substances 0.000 description 23
- 238000004519 manufacturing process Methods 0.000 description 18
- 229910045601 alloy Inorganic materials 0.000 description 14
- 239000000956 alloy Substances 0.000 description 14
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 10
- 238000005468 ion implantation Methods 0.000 description 10
- 238000009413 insulation Methods 0.000 description 9
- 230000009257 reactivity Effects 0.000 description 8
- 150000002739 metals Chemical class 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000000470 constituent Substances 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 239000002356 single layer Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910004166 TaN Inorganic materials 0.000 description 5
- 230000004913 activation Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229910008807 WSiN Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- -1 TiW and WSi Chemical class 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- FGRBYDKOBBBPOI-UHFFFAOYSA-N 10,10-dioxo-2-[4-(N-phenylanilino)phenyl]thioxanthen-9-one Chemical compound O=C1c2ccccc2S(=O)(=O)c2ccc(cc12)-c1ccc(cc1)N(c1ccccc1)c1ccccc1 FGRBYDKOBBBPOI-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
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Abstract
Description
Claims (4)
- 표면을 갖고, SiC로 이루어지는 반도체층과,상기 반도체층의 상기 표면의 적어도 일부에 노출되도록 상기 반도체층 내에 형성된, 소정의 도전형의 반도체 영역과,상기 반도체 영역과 접촉하도록 상기 반도체 영역상에 형성된 제 1 절연막과,상기 반도체 영역과 접촉하도록 상기 반도체 영역상에 또는 상기 제 1 절연막과 접촉하도록 상기 제 1 절연막상에 형성된 전극과,상기 전극에 접촉하도록 상기 전극상에 형성되고, 또한, Pt, Ti, Mo, W, Ta 중 적어도 1종을 포함하는 제 1 금속층과,상기 제 1 금속층에 접촉하도록 상기 제 1 금속층상에 형성되고, 또한, Mo, W, Cu 중 적어도 1종을 포함하는 제 2 금속층을 구비하는 전력용 반도체 장치.
- 제 1 항에 있어서,상기 반도체층의 상기 표면 및 상기 제 1 절연막의 표면 중 적어도 한쪽의 표면 상으로서 상기 전극이 형성된 영역 이외의 영역에 있어서, 형성된 제 2 절연막을 더 구비하고,상기 제 1 및 제 2 금속층은, 상기 제 2 절연막상에 연장하고 있는전력용 반도체 장치.
- 표면을 갖는 반도체층과,상기 반도체층의 상기 표면의 적어도 일부에 노출되도록 상기 반도체층 내에 형성된, 소정의 도전형의 반도체 영역과,상기 반도체 영역과 접촉하도록 상기 반도체 영역상에 형성된 제 1 절연막과,상기 반도체 영역과 접촉하도록 상기 반도체 영역상에 또는 상기 제 1 절연막과 접촉하도록 상기 제 1 절연막상에 형성된 전극과,상기 전극에 접촉하도록 상기 전극상에 형성되고, 또한, Pt, Ti, Mo, W, Ta 중 적어도 1종을 포함하는 제 1 금속층과,상기 제 1 금속층에 접촉하도록 상기 제 1 금속층상에 형성되고, 또한, Mo, W, Cu 중 적어도 1종을 포함하는 제 2 금속층과,상기 제 2 금속층에 접촉하도록 상기 제 2 금속층상에 형성되고, 또한, Pt, Mo, W 중 적어도 1종을 포함하는 제 3 금속층을 구비하는 전력용 반도체 장치.
- 표면을 갖는 반도체층과,상기 반도체층의 상기 표면의 적어도 일부에 노출하도록 상기 반도체층 내에 형성된, 소정 도전형의 반도체 영역과,상기 반도체 영역상에 형성된 제 1 절연막과,상기 반도체 영역상에 형성된 전극과,상기 전극상에 형성되고, 또한, Pt, Ti, Mo, W, Ta 중 적어도 1종을 포함하는 제 1 금속층과,상기 제 1 금속층상에 형성되고, 또한, Mo, W, Cu 중 적어도 1종을 포함하는 제 2 금속층과,상기 반도체층의 상기 표면 및 상기 제 1 절연막의 표면 중 적어도 한쪽의 표면 상으로서 상기 전극이 형성된 영역 이외의 영역에 있어서, 형성된 제 2 절연막을 구비하고,상기 제 1 및 제 2 금속층은, 상기 제 2 절연막상에 연장하고 있고,상기 전극과 상기 제 2 절연막이 접촉하지 않도록, 그들 사이에 상기 제 1 금속층이 존재하는전력용 반도체 장치.
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JPJP-P-2006-00078348 | 2006-03-22 | ||
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KR101025438B1 true KR101025438B1 (ko) | 2011-03-28 |
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US (2) | US8093598B2 (ko) |
JP (2) | JP4995187B2 (ko) |
KR (1) | KR101025438B1 (ko) |
CN (1) | CN101395701B (ko) |
DE (1) | DE112007000697B4 (ko) |
WO (1) | WO2007108439A1 (ko) |
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JP5211666B2 (ja) * | 2007-12-06 | 2013-06-12 | 株式会社デンソー | 絶縁ゲートトランジスタ |
WO2010073991A1 (ja) * | 2008-12-23 | 2010-07-01 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JP2014225692A (ja) * | 2008-12-25 | 2014-12-04 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
JP5558392B2 (ja) * | 2011-03-10 | 2014-07-23 | 株式会社東芝 | 半導体装置とその製造方法 |
JP2012253108A (ja) * | 2011-06-01 | 2012-12-20 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置およびその製造方法 |
DE112012002603B4 (de) * | 2011-06-23 | 2017-02-02 | Mitsubishi Electric Corp. | Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung |
US9257283B2 (en) * | 2012-08-06 | 2016-02-09 | General Electric Company | Device having reduced bias temperature instability (BTI) |
JP5889171B2 (ja) * | 2012-12-04 | 2016-03-22 | 三菱電機株式会社 | 炭化珪素半導体装置及びその製造方法 |
JP6125420B2 (ja) * | 2013-12-26 | 2017-05-10 | 株式会社豊田中央研究所 | 半導体装置 |
US9722017B2 (en) * | 2014-01-28 | 2017-08-01 | Mitsubishi Electric Corporation | Silicon carbide semiconductor device |
JP6246617B2 (ja) * | 2014-02-27 | 2017-12-13 | 株式会社豊田中央研究所 | 表面電極を備えている半導体チップ |
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JPWO2007108439A1 (ja) | 2009-08-06 |
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US8093598B2 (en) | 2012-01-10 |
US20120074508A1 (en) | 2012-03-29 |
CN101395701A (zh) | 2009-03-25 |
DE112007000697T5 (de) | 2009-02-05 |
JP4995187B2 (ja) | 2012-08-08 |
CN101395701B (zh) | 2010-06-02 |
WO2007108439A1 (ja) | 2007-09-27 |
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US20090020766A1 (en) | 2009-01-22 |
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