KR100502410B1 - 디램 셀들 - Google Patents

디램 셀들 Download PDF

Info

Publication number
KR100502410B1
KR100502410B1 KR10-2002-0039386A KR20020039386A KR100502410B1 KR 100502410 B1 KR100502410 B1 KR 100502410B1 KR 20020039386 A KR20020039386 A KR 20020039386A KR 100502410 B1 KR100502410 B1 KR 100502410B1
Authority
KR
South Korea
Prior art keywords
regions
region
storage node
mos transistors
impurity
Prior art date
Application number
KR10-2002-0039386A
Other languages
English (en)
Korean (ko)
Other versions
KR20040005092A (ko
Inventor
이상현
배동일
Original Assignee
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to KR10-2002-0039386A priority Critical patent/KR100502410B1/ko
Priority to US10/425,231 priority patent/US7119389B2/en
Priority to JP2003180236A priority patent/JP4837884B2/ja
Priority to DE10330072A priority patent/DE10330072B4/de
Priority to CNB031471684A priority patent/CN100461422C/zh
Publication of KR20040005092A publication Critical patent/KR20040005092A/ko
Application granted granted Critical
Publication of KR100502410B1 publication Critical patent/KR100502410B1/ko
Priority to US11/470,011 priority patent/US7504295B2/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/01Manufacture or treatment
    • H10B12/02Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03Making the capacitor or connections thereto
    • H10B12/033Making the capacitor or connections thereto the capacitor extending over the transistor
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40Capacitors
    • H01L28/60Electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76895Local interconnects; Local pads, as exemplified by patent document EP0896365
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0207Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
KR10-2002-0039386A 2002-07-08 2002-07-08 디램 셀들 KR100502410B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR10-2002-0039386A KR100502410B1 (ko) 2002-07-08 2002-07-08 디램 셀들
US10/425,231 US7119389B2 (en) 2002-07-08 2003-04-29 Dynamic random access memory cells having laterally offset storage nodes
JP2003180236A JP4837884B2 (ja) 2002-07-08 2003-06-24 Dramセル
DE10330072A DE10330072B4 (de) 2002-07-08 2003-07-03 Zellen eines dynamischen Speichers mit wahlfreiem Zugriff mit seitlich versetzten Speicherknoten und Verfahren zu ihrer Herstellung
CNB031471684A CN100461422C (zh) 2002-07-08 2003-07-08 具有侧向偏移存储节点的动态随机存取存储器单元及其制造方法
US11/470,011 US7504295B2 (en) 2002-07-08 2006-09-05 Methods for fabricating dynamic random access memory cells having laterally offset storage nodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR10-2002-0039386A KR100502410B1 (ko) 2002-07-08 2002-07-08 디램 셀들

Publications (2)

Publication Number Publication Date
KR20040005092A KR20040005092A (ko) 2004-01-16
KR100502410B1 true KR100502410B1 (ko) 2005-07-19

Family

ID=29997481

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2002-0039386A KR100502410B1 (ko) 2002-07-08 2002-07-08 디램 셀들

Country Status (5)

Country Link
US (2) US7119389B2 (de)
JP (1) JP4837884B2 (de)
KR (1) KR100502410B1 (de)
CN (1) CN100461422C (de)
DE (1) DE10330072B4 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101168559B1 (ko) 2011-08-01 2012-07-27 에스케이하이닉스 주식회사 반도체 소자의 레이아웃 및 반도체 소자의 형성방법
US8394680B2 (en) 2009-07-31 2013-03-12 Hynix Semiconductor Inc Layout for semiconductor device and method of fabricating the semiconductor device

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100463203B1 (ko) * 2002-12-10 2004-12-23 삼성전자주식회사 활성 영역을 구비하는 반도체 소자
KR100481183B1 (ko) * 2003-03-17 2005-04-07 삼성전자주식회사 이중 캐핑막 패턴들을 갖는 반도체 장치 및 그 제조방법
JP4398829B2 (ja) * 2004-09-17 2010-01-13 株式会社東芝 半導体装置
KR100706233B1 (ko) 2004-10-08 2007-04-11 삼성전자주식회사 반도체 기억 소자 및 그 제조방법
US7547936B2 (en) 2004-10-08 2009-06-16 Samsung Electronics Co., Ltd. Semiconductor memory devices including offset active regions
KR100745069B1 (ko) * 2005-06-29 2007-08-01 주식회사 하이닉스반도체 반도체 소자의 스토리지 노드 콘택과 스토리지 노드의 배치방법, 상기 배치 방법에 따른 반도체 소자
US8405216B2 (en) * 2005-06-29 2013-03-26 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structure for integrated circuits
JP2007103862A (ja) * 2005-10-07 2007-04-19 Renesas Technology Corp 半導体装置およびその製造方法
KR100649313B1 (ko) * 2005-12-29 2006-11-24 동부일렉트로닉스 주식회사 반도체 소자의 이중 금속배선 및 그 제조 방법
JP5694625B2 (ja) * 2006-04-13 2015-04-01 ピーエスフォー ルクスコ エスエイアールエルPS4 Luxco S.a.r.l. 半導体記憶装置
JP4191203B2 (ja) * 2006-05-01 2008-12-03 エルピーダメモリ株式会社 半導体装置及びその製造方法
US7960797B2 (en) * 2006-08-29 2011-06-14 Micron Technology, Inc. Semiconductor devices including fine pitch arrays with staggered contacts
KR101353343B1 (ko) * 2007-09-18 2014-01-17 삼성전자주식회사 활성 영역 상에서 비트라인 패턴의 일 측부로부터 서로다른 거리들로 각각 이격되는 스토리지 노드들을 가지는반도체 장치들 및 그 형성방법들
JP2009182114A (ja) * 2008-01-30 2009-08-13 Elpida Memory Inc 半導体装置およびその製造方法
JP2010161173A (ja) * 2009-01-07 2010-07-22 Renesas Electronics Corp 半導体記憶装置
KR101129936B1 (ko) * 2010-12-13 2012-03-23 주식회사 하이닉스반도체 라인 타입의 액티브 영역을 갖는 반도체 소자 및 그 제조 방법
US10790041B2 (en) 2011-08-17 2020-09-29 23Andme, Inc. Method for analyzing and displaying genetic information between family members
TW201414295A (zh) * 2012-09-20 2014-04-01 Sony Corp 收訊裝置、收訊方法、播送裝置、播送方法、程式、及連動應用程式控制系統
US9735382B2 (en) * 2012-11-08 2017-08-15 Palo Alto Research Center Incorporated Circuit layout for thin film transistors in series or parallel
US9536746B2 (en) * 2014-03-13 2017-01-03 Taiwan Semiconductor Manufacturing Co., Ltd. Recess and epitaxial layer to improve transistor performance
MX2017006028A (es) 2014-11-06 2018-01-23 Ancestryhealth Com Llc Prediccion de resultados de salud.
KR102274738B1 (ko) * 2016-01-08 2021-07-07 삼성전자주식회사 반도체 장치 및 이의 제조 방법
US9953883B2 (en) * 2016-04-11 2018-04-24 Samsung Electronics Co., Ltd. Semiconductor device including a field effect transistor and method for manufacturing the same
CN107845633B (zh) * 2017-10-30 2023-05-12 长鑫存储技术有限公司 存储器及其制造方法
US10381351B2 (en) * 2017-12-26 2019-08-13 Nanya Technology Corporation Transistor structure and semiconductor layout structure
US10818729B2 (en) * 2018-05-17 2020-10-27 Macronix International Co., Ltd. Bit cost scalable 3D phase change cross-point memory
CN111009522A (zh) * 2018-10-08 2020-04-14 无锡华润上华科技有限公司 半导体器件的制造方法、半导体器件
US10622030B1 (en) * 2018-10-28 2020-04-14 Nanya Technology Corporation Memory structure with non-straight word line
US11967531B2 (en) 2020-12-29 2024-04-23 Changxin Memory Technologies, Inc. Semiconductor structure and forming method thereof
CN114695353B (zh) 2020-12-29 2023-10-13 长鑫存储技术有限公司 半导体结构及其形成方法
CN114695355A (zh) 2020-12-29 2022-07-01 长鑫存储技术有限公司 半导体结构以及半导体结构的形成方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5939747A (en) * 1996-11-13 1999-08-17 Oki Electric Industry Co., Ltd. Capacitor produced in a semiconductor device
JP2000150824A (ja) * 1998-11-12 2000-05-30 Nec Corp 半導体記憶装置とその製造方法
JP2000269460A (ja) * 1999-03-18 2000-09-29 Toshiba Corp 半導体記憶装置及びその製造方法
JP2000349250A (ja) * 1999-06-09 2000-12-15 Sony Corp 誘電体メモリおよびその製造方法並びに誘電体キャパシタ

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2741857B2 (ja) * 1987-05-11 1998-04-22 株式会社日立製作所 半導体記憶装置
JP2859288B2 (ja) * 1989-03-20 1999-02-17 株式会社日立製作所 半導体集積回路装置及びその製造方法
US5313089A (en) * 1992-05-26 1994-05-17 Motorola, Inc. Capacitor and a memory cell formed therefrom
DE4222467C1 (de) 1992-07-08 1993-06-24 Siemens Ag, 8000 Muenchen, De
JPH06120447A (ja) * 1992-10-05 1994-04-28 Mitsubishi Electric Corp 半導体装置の導電層接続構造およびその構造を備えたdram
JP3319869B2 (ja) * 1993-06-24 2002-09-03 三菱電機株式会社 半導体記憶装置およびその製造方法
JP3368002B2 (ja) 1993-08-31 2003-01-20 三菱電機株式会社 半導体記憶装置
JP3277103B2 (ja) * 1995-09-18 2002-04-22 株式会社東芝 半導体装置及びその製造方法
JPH0992717A (ja) * 1995-09-21 1997-04-04 Mitsubishi Electric Corp 半導体装置およびその製造方法
US6686288B1 (en) * 1996-02-21 2004-02-03 Micron Technology, Inc. Integrated circuit having self-aligned CVD-tungsten/titanium contact plugs strapped with metal interconnect and method of manufacture
JP3519545B2 (ja) * 1996-05-31 2004-04-19 株式会社日立製作所 半導体集積回路装置の製造方法
JPH1084091A (ja) * 1996-09-09 1998-03-31 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP2930110B2 (ja) * 1996-11-14 1999-08-03 日本電気株式会社 半導体記憶装置およびその製造方法
JPH10242147A (ja) * 1997-02-27 1998-09-11 Toshiba Corp 半導体装置およびその製造方法ならびに半導体記憶装置およびその製造方法
JP3445495B2 (ja) * 1997-07-23 2003-09-08 株式会社東芝 半導体装置
JP3599548B2 (ja) * 1997-12-18 2004-12-08 株式会社日立製作所 半導体集積回路装置の製造方法
KR100278654B1 (ko) 1998-03-12 2001-02-01 윤종용 디램소자의셀커패시터형성방법
KR100283028B1 (ko) 1998-03-19 2001-03-02 윤종용 디램 셀 캐패시터의 제조 방법
KR100270210B1 (ko) 1998-04-25 2000-10-16 윤종용 디램 셀 커패시터 및 그의 제조 방법
JP2000049306A (ja) * 1998-07-29 2000-02-18 Hitachi Ltd 半導体装置およびその製造方法
JP2000183313A (ja) * 1998-12-21 2000-06-30 Hitachi Ltd 半導体集積回路装置およびその製造方法
US6083788A (en) * 1999-03-26 2000-07-04 Infineon Technologies North America Corp. Stacked capacitor memory cell and method of manufacture
US6417537B1 (en) * 2000-01-18 2002-07-09 Micron Technology, Inc. Metal oxynitride capacitor barrier layer
KR100363328B1 (ko) * 2001-01-11 2002-12-05 삼성전자 주식회사 콘택 패드를 갖는 반도체 소자의 제조방법
US6665207B2 (en) * 2001-11-14 2003-12-16 Micron Technology, Inc. ROM embedded DRAM with dielectric removal/short

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5939747A (en) * 1996-11-13 1999-08-17 Oki Electric Industry Co., Ltd. Capacitor produced in a semiconductor device
JP2000150824A (ja) * 1998-11-12 2000-05-30 Nec Corp 半導体記憶装置とその製造方法
JP2000269460A (ja) * 1999-03-18 2000-09-29 Toshiba Corp 半導体記憶装置及びその製造方法
JP2000349250A (ja) * 1999-06-09 2000-12-15 Sony Corp 誘電体メモリおよびその製造方法並びに誘電体キャパシタ

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8394680B2 (en) 2009-07-31 2013-03-12 Hynix Semiconductor Inc Layout for semiconductor device and method of fabricating the semiconductor device
KR101168559B1 (ko) 2011-08-01 2012-07-27 에스케이하이닉스 주식회사 반도체 소자의 레이아웃 및 반도체 소자의 형성방법

Also Published As

Publication number Publication date
US7504295B2 (en) 2009-03-17
US20040004257A1 (en) 2004-01-08
KR20040005092A (ko) 2004-01-16
US20070026603A1 (en) 2007-02-01
CN100461422C (zh) 2009-02-11
DE10330072A1 (de) 2004-01-29
JP4837884B2 (ja) 2011-12-14
CN1495906A (zh) 2004-05-12
US7119389B2 (en) 2006-10-10
JP2004047999A (ja) 2004-02-12
DE10330072B4 (de) 2010-07-22

Similar Documents

Publication Publication Date Title
KR100502410B1 (ko) 디램 셀들
US9837313B2 (en) Disposable pillars for contact information
KR100555564B1 (ko) 스퀘어형 스토리지 전극을 채용하는 반도체 소자 및 그제조 방법
US6914286B2 (en) Semiconductor memory devices using sidewall spacers
US9305924B2 (en) Semiconductor device having gate electrode embedded in gate trench
KR20190014440A (ko) 다이내믹 랜덤 액세스 메모리 및 그 제조 방법
KR0120933B1 (ko) 반도체 메모리 장치 및 그 제조 방법
KR100509210B1 (ko) Dram셀장치및그의제조방법
KR20020066138A (ko) 디램 셀 및 그 제조방법
KR20010051702A (ko) Dram-셀 장치 및 그의 제조 방법
US7145195B2 (en) Semiconductor memory device and method of manufacturing the same
US7714372B2 (en) Dynamic random access memory devices and methods of forming the same
KR20230016914A (ko) 반도체 소자
KR20030003100A (ko) 반도체 장치 및 그 제조 방법
KR100343002B1 (ko) 버티컬 트랜지스터와 딥 트렌치 커패시터를 가지는 메모리셀
KR20010073289A (ko) 디램 소자
KR100434506B1 (ko) 반도체 메모리 소자 및 그 제조방법
KR960011176B1 (ko) 반도체 장치의 제조방법 및 그 구조
US6423597B1 (en) Structure of a DRAM and a manufacturing process thereof
KR20000012944A (ko) 디렘 장치 및 그의 제조 방법
KR20040042930A (ko) 커패시터를 갖는 반도체 소자 및 그 형성방법
KR20060038584A (ko) 비트라인 콘택 저항을 감소시킬 수 있는 반도체 소자 및그 제조 방법
KR20010087506A (ko) 반도체 메모리 장치
KR20060027244A (ko) 스토리지 노드 전극을 갖는 반도체소자의 제조방법 및그에 의하여 제조된 반도체소자
KR19990012235A (ko) 고집적 반도체 메모리 장치 및 그 제조방법

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20120706

Year of fee payment: 8

FPAY Annual fee payment

Payment date: 20130701

Year of fee payment: 9

LAPS Lapse due to unpaid annual fee