JP2007073986A - GaNベースの半導体デバイスを製造する方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 48
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 109
- 229910002601 GaN Inorganic materials 0.000 claims description 17
- 230000005855 radiation Effects 0.000 claims description 12
- 239000013078 crystal Substances 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 10
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- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 229910002704 AlGaN Inorganic materials 0.000 claims description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 3
- 229910000838 Al alloy Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
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- 239000010937 tungsten Substances 0.000 claims description 3
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- 229910003267 Ni-Co Inorganic materials 0.000 claims description 2
- 229910003262 Ni‐Co Inorganic materials 0.000 claims description 2
- 238000004873 anchoring Methods 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
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- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 2
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- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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Abstract
【解決手段】GaNベースの多数の層(4)を、基板ボディ(1)と介在層(2)とを有する張り合せ基板上に被着し、この場合、基板ボディ(1)の熱膨張係数が、GaNベースの層(4)の熱膨張係数に近似しているか又はGaNベースの層(4)の熱膨張係数より大きく、GaNベースの層(4)を介在層(2)上に析出させる。有利には、介在層及び基板ボディを、ウェハボンディング法によって張り合せる。
【選択図】図1c
Description
Claims (33)
- GaNベースの多数の層を有する半導体デバイスをエピタキシャル成長によって製造する方法であって、
GaNベースの層(4)を、基板ボディ(1)と介在層(2)とを有する張り合せ基板上に被着し、この場合、基板ボディ(1)の熱膨張係数が、GaNベースの層(4)の熱膨張係数に近似しているか又はGaNベースの層(4)の熱膨張係数よりも大きく、かつGaNベースの層(4)を介在層(2)上に析出させることを特徴とする、GaNベースの半導体デバイスを製造する方法。 - 介在層(2)の厚さは、張り合せ基板の熱膨張係数がおもに基板ボディ(1)によって決定される程度に薄い、請求項1記載の方法。
- 基板ボディ(1)が、SiC、ポリSiC、Si、ポリSi、サファイア、GaN、ポリGaN又はAlNを有する、請求項1又は2記載の方法。
- 介在層(2)が、SiC、Si、サファイア、MgO、GaN又はAlGaNを有する、請求項1から3までのいずれか1項記載の方法。
- 介在層(2)が、少なくとも部分領域で単結晶の表面を有する、請求項1から4までのいずれか1項記載の方法。
- 基板ボディ(1)がポリSiCを、介在層(2)が単結晶のSiCを有する、請求項1から5までのいずれか1項記載の方法。
- 基板ボディ(1)がポリSiを、介在層(2)が単結晶のSiを有する、請求項1から5までのいずれか1項記載の方法。
- 基板ボディ(1)がポリGaNを、介在層(2)が単結晶のGaNを有する、請求項1から5までのいずれか1項記載の方法。
- GaNベースの層(4)を、介在層(2)の、Si(111)表面上に又は少なくとも部分領域で単結晶のSiC表面上に析出させる、請求項1から8までのいずれか1項記載の方法。
- 介在層(2)を、ボンディング法、特に酸化ボンディング法又はウェハボンディング法によって基板ボディ(1)上に被着する、請求項1から9までのいずれか1項記載の方法。
- 基板ボディ(1)と介在層(2)との間に、固着層(3)を形成する、請求項1から10までのいずれか1項記載の方法。
- 固着層(3)が、酸化ケイ素を有する、請求項11記載の方法。
- GaNベースの層を張り合せ基板上に被着する前に、エピタキシャル窓を有するマスク層(7)を形成し、その際、エピタキシャル窓の内の張り合せ基板のエピタキシャル表面をカバーされないままにする、請求項1から12までのいずれか1項記載の方法。
- GaNベースの層(4)を張り合せ基板上に被着した後、個別の半導体層積層体(5)に構造化する、請求項1から13までのいずれか1項記載の方法。
- 前記方法に、
支持体(6)を半導体層積層体(5)上に被着する段階、及び
張り合せ基板を剥離する段階を続けて行う、請求項14記載の方法。 - 前記方法に、
介在支持体を半導体層積層体(5)上に被着する段階、
張り合せ基板を剥離する段階、
支持体(6)を、半導体層積層体(5)の、張り合せ基板が剥離した側に被着する段階、及び
介在支持体を剥離する段階を続けて行う、請求項14記載の方法。 - 支持体(6)が、GaAs、ゲルマニウム、ケイ素、酸化亜鉛、モリブデン、アルミニウム、銅、鉄、ニッケル又はコバルトの少なくとも1つの化合物もしくは少なくとも1つの元素を有する、請求項15又は16記載の方法。
- 基板ボディがサファイアを、支持体(6)がGaAs、モリブデン、タングステン又はFe−Ni−Co合金を有する、請求項17記載の方法。
- 基板ボディ(1)がSiCを、支持体(6)がケイ素又はSiCを有する、請求項17記載の方法。
- 支持体(6)の熱膨張係数が、GaNベースの層(4)の熱膨張係数に適合する、請求項15から19までのいずれか1項記載の方法。
- 支持体(6)の熱膨張係数が、基板ボディ(1)の熱膨張係数に適合する、請求項15から20までのいずれか1項記載の方法。
- 支持体(6)の熱膨張係数が、基板ボディ(1)の熱膨張係数とGaNベースの層(4)の熱膨張係数との間にある、請求項15から21までのいずれか1項記載の方法。
- GaNベースの層(4)もしくは半導体層積層体(5)上に、リフレクタ層(9)を形成する、請求項1から22までのいずれか1項記載の方法。
- リフレクタ層(9)を、金属層の被着によって形成する、請求項23記載の方法。
- 前記金属層が、銀、アルミニウム、又は銀−又はアルミニウム合金を有する、請求項24記載の方法。
- リフレクタ層(9)が、同時に接触面としての役割を果たす、請求項23から25までのいずれか1項記載の方法。
- リフレクタ層(9)を、誘電性リフレクタ形成によって形成する、請求項23記載の方法。
- 半導体層積層体(5)の表面を、少なくとも局部的に粗面化する、請求項14から27までのいずれか1項記載の方法。
- 半導体層積層体(5)の表面を、エッチングによって粗面化する、請求項28記載の方法。
- 半導体層積層体(5)の表面を、サンドブラスト法によって粗面化する、請求項28又は29記載の方法。
- 放射線を発するデバイス、ダイオード、トランジスタ、放射線を発するダイオード、LED、半導体レーザー及び放射線を検出するデバイスを含む薄層半導体デバイスであって、
このデバイスが、請求項15又は16記載の又はこれらの請求項のうちいずれか1項に従属する請求項に記載の方法を用いて製造されることを特徴とする、薄層半導体デバイス。 - GaNベースの多数の層(4)を有する半導体デバイスをエピタキシャル成長によって製造するための、基板ボディ(1)と介在層(2)とを有する張り合せ基板の使用において、
基板ボディ(1)と介在層(2)とが、ボンディング法によって張り合わされていることを特徴とする、張り合せ基板の使用。 - 基板ボディ(1)と介在層(2)とが、酸化ボンディング法又はウェハボンディング法によって張り合わされている、請求項32記載の張り合せ基板の使用。
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DE10051465A DE10051465A1 (de) | 2000-10-17 | 2000-10-17 | Verfahren zur Herstellung eines Halbleiterbauelements auf GaN-Basis |
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US (3) | US7691656B2 (ja) |
EP (1) | EP1327267B1 (ja) |
JP (2) | JP2004512688A (ja) |
CN (1) | CN100377368C (ja) |
DE (1) | DE10051465A1 (ja) |
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WO (1) | WO2002033760A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007180302A (ja) * | 2005-12-28 | 2007-07-12 | Rohm Co Ltd | 窒化物半導体発光素子及び窒化物半導体発光素子製造方法 |
JP2010021546A (ja) * | 2008-07-08 | 2010-01-28 | Seoul Opto Devices Co Ltd | 発光素子及びその製造方法 |
Families Citing this family (125)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1277241B1 (de) * | 2000-04-26 | 2017-12-13 | OSRAM Opto Semiconductors GmbH | Lumineszenzdiodenchip auf der basis von gan |
WO2001082384A1 (de) * | 2000-04-26 | 2001-11-01 | Osram Opto Semiconductors Gmbh | Strahlungsmittierendes halbleiterbauelement und herstellungsverfahren |
TWI292227B (en) * | 2000-05-26 | 2008-01-01 | Osram Opto Semiconductors Gmbh | Light-emitting-dioed-chip with a light-emitting-epitaxy-layer-series based on gan |
TWI226139B (en) * | 2002-01-31 | 2005-01-01 | Osram Opto Semiconductors Gmbh | Method to manufacture a semiconductor-component |
US20030189215A1 (en) * | 2002-04-09 | 2003-10-09 | Jong-Lam Lee | Method of fabricating vertical structure leds |
US8294172B2 (en) * | 2002-04-09 | 2012-10-23 | Lg Electronics Inc. | Method of fabricating vertical devices using a metal support film |
US20040140474A1 (en) * | 2002-06-25 | 2004-07-22 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light-emitting device, method for fabricating the same and method for bonding the same |
US6841802B2 (en) | 2002-06-26 | 2005-01-11 | Oriol, Inc. | Thin film light emitting diode |
DE10234977A1 (de) | 2002-07-31 | 2004-02-12 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Dünnschicht-Halbleiterbauelement auf GaN-Basis |
DE10245631B4 (de) * | 2002-09-30 | 2022-01-20 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterbauelement |
CN100530705C (zh) * | 2003-01-31 | 2009-08-19 | 奥斯兰姆奥普托半导体有限责任公司 | 用于制造一个半导体元器件的方法 |
JP4904150B2 (ja) * | 2003-01-31 | 2012-03-28 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 発光素子の製造方法 |
US20040259279A1 (en) * | 2003-04-15 | 2004-12-23 | Erchak Alexei A. | Light emitting device methods |
KR20060059891A (ko) * | 2003-06-04 | 2006-06-02 | 유명철 | 수직 구조 화합물 반도체 디바이스의 제조 방법 |
TWI240434B (en) * | 2003-06-24 | 2005-09-21 | Osram Opto Semiconductors Gmbh | Method to produce semiconductor-chips |
KR100531178B1 (ko) * | 2003-07-08 | 2005-11-28 | 재단법인서울대학교산학협력재단 | 중간 질화물 반도체 에피층의 금속상 전환을 이용한질화물 반도체 에피층 성장 방법 |
FR2859312B1 (fr) | 2003-09-02 | 2006-02-17 | Soitec Silicon On Insulator | Scellement metallique multifonction |
US7344903B2 (en) * | 2003-09-17 | 2008-03-18 | Luminus Devices, Inc. | Light emitting device processes |
US7341880B2 (en) * | 2003-09-17 | 2008-03-11 | Luminus Devices, Inc. | Light emitting device processes |
CN100499184C (zh) | 2003-09-26 | 2009-06-10 | 奥斯兰姆奥普托半导体有限责任公司 | 发光薄膜半导体芯片 |
DE10355600B4 (de) * | 2003-11-28 | 2021-06-24 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterchip und Verfahren zur Herstellung von Halbleiterchips |
EP1569263B1 (de) * | 2004-02-27 | 2011-11-23 | OSRAM Opto Semiconductors GmbH | Verfahren zum Verbinden zweier Wafer |
JP4868709B2 (ja) * | 2004-03-09 | 2012-02-01 | 三洋電機株式会社 | 発光素子 |
JP2007246289A (ja) * | 2004-03-11 | 2007-09-27 | Nec Corp | 窒化ガリウム系半導体基板の作製方法 |
CN1998094B (zh) * | 2004-04-07 | 2012-12-26 | 霆激技术有限公司 | 半导体发光二极管上的反射层的制造 |
JP5336075B2 (ja) * | 2004-04-28 | 2013-11-06 | バーティクル,インク | 縦構造半導体装置 |
US7825006B2 (en) * | 2004-05-06 | 2010-11-02 | Cree, Inc. | Lift-off process for GaN films formed on SiC substrates and devices fabricated using the method |
JP5194334B2 (ja) * | 2004-05-18 | 2013-05-08 | 住友電気工業株式会社 | Iii族窒化物半導体デバイスの製造方法 |
US20090023239A1 (en) * | 2004-07-22 | 2009-01-22 | Luminus Devices, Inc. | Light emitting device processes |
US20060054919A1 (en) * | 2004-08-27 | 2006-03-16 | Kyocera Corporation | Light-emitting element, method for manufacturing the same and lighting equipment using the same |
US7737459B2 (en) * | 2004-09-22 | 2010-06-15 | Cree, Inc. | High output group III nitride light emitting diodes |
US7259402B2 (en) * | 2004-09-22 | 2007-08-21 | Cree, Inc. | High efficiency group III nitride-silicon carbide light emitting diode |
US8174037B2 (en) | 2004-09-22 | 2012-05-08 | Cree, Inc. | High efficiency group III nitride LED with lenticular surface |
US8513686B2 (en) * | 2004-09-22 | 2013-08-20 | Cree, Inc. | High output small area group III nitride LEDs |
DE102004062290A1 (de) * | 2004-12-23 | 2006-07-06 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Halbleiterchips |
US8288942B2 (en) | 2004-12-28 | 2012-10-16 | Cree, Inc. | High efficacy white LED |
US7932111B2 (en) | 2005-02-23 | 2011-04-26 | Cree, Inc. | Substrate removal process for high light extraction LEDs |
JP4817673B2 (ja) * | 2005-02-25 | 2011-11-16 | 三洋電機株式会社 | 窒化物系半導体素子の作製方法 |
KR100631981B1 (ko) * | 2005-04-07 | 2006-10-11 | 삼성전기주식회사 | 수직구조 3족 질화물 발광 소자 및 그 제조 방법 |
US7365374B2 (en) | 2005-05-03 | 2008-04-29 | Nitronex Corporation | Gallium nitride material structures including substrates and methods associated with the same |
KR100599012B1 (ko) * | 2005-06-29 | 2006-07-12 | 서울옵토디바이스주식회사 | 열전도성 기판을 갖는 발광 다이오드 및 그것을 제조하는방법 |
DE102005055293A1 (de) | 2005-08-05 | 2007-02-15 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von Halbleiterchips und Dünnfilm-Halbleiterchip |
DE102005052358A1 (de) * | 2005-09-01 | 2007-03-15 | Osram Opto Semiconductors Gmbh | Verfahren zum lateralen Zertrennen eines Halbleiterwafers und optoelektronisches Bauelement |
DE102005052357A1 (de) * | 2005-09-01 | 2007-03-15 | Osram Opto Semiconductors Gmbh | Verfahren zum lateralen Zertrennen eines Halbleiterwafers und optoelektronisches Bauelement |
KR100691363B1 (ko) | 2005-09-23 | 2007-03-12 | 삼성전기주식회사 | 수직구조 발광 다이오드의 제조 방법 |
DE102005053274A1 (de) * | 2005-09-30 | 2007-04-12 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen einer Mehrzahl von Halbleiterchips und Halbleiterbauelement |
DE102005061346A1 (de) * | 2005-09-30 | 2007-04-05 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
KR100714589B1 (ko) * | 2005-10-05 | 2007-05-07 | 삼성전기주식회사 | 수직구조 발광 다이오드의 제조 방법 |
SG131803A1 (en) | 2005-10-19 | 2007-05-28 | Tinggi Tech Private Ltd | Fabrication of transistors |
PL1798781T3 (pl) | 2005-12-15 | 2010-03-31 | Lg Electronics Inc | Dioda LED posiadająca pionową strukturę i sposób jej wytwarzania |
SG133432A1 (en) | 2005-12-20 | 2007-07-30 | Tinggi Tech Private Ltd | Localized annealing during semiconductor device fabrication |
US20070194342A1 (en) * | 2006-01-12 | 2007-08-23 | Kinzer Daniel M | GaN SEMICONDUCTOR DEVICE AND PROCESS EMPLOYING GaN ON THIN SAPHIRE LAYER ON POLYCRYSTALLINE SILICON CARBIDE |
DE102006007293B4 (de) | 2006-01-31 | 2023-04-06 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zum Herstellen eines Quasi-Substratwafers und ein unter Verwendung eines solchen Quasi-Substratwafers hergestellter Halbleiterkörper |
JP2007207981A (ja) * | 2006-02-01 | 2007-08-16 | Rohm Co Ltd | 窒化物半導体発光素子の製造方法 |
JP2007287757A (ja) | 2006-04-12 | 2007-11-01 | Rohm Co Ltd | 窒化物半導体発光素子及び窒化物半導体発光素子の製造方法 |
DE102006061167A1 (de) * | 2006-04-25 | 2007-12-20 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement |
TW200802544A (en) * | 2006-04-25 | 2008-01-01 | Osram Opto Semiconductors Gmbh | Composite substrate and method for making the same |
US20070252638A1 (en) * | 2006-04-26 | 2007-11-01 | Farrukh Aquil | Method and apparatus for temperature compensating off chip driver (OCD) circuit |
JP5232971B2 (ja) * | 2006-04-28 | 2013-07-10 | 豊田合成株式会社 | 窒化物系半導体発光素子の製造方法 |
KR20090019871A (ko) | 2006-05-31 | 2009-02-25 | 크리 엘이디 라이팅 솔루션즈, 인크. | 조명 장치 및 조명 방법 |
JP4946195B2 (ja) * | 2006-06-19 | 2012-06-06 | サンケン電気株式会社 | 半導体発光素子及びその製造方法 |
JP5003033B2 (ja) | 2006-06-30 | 2012-08-15 | 住友電気工業株式会社 | GaN薄膜貼り合わせ基板およびその製造方法、ならびにGaN系半導体デバイスおよびその製造方法 |
DE102006060410A1 (de) * | 2006-06-30 | 2008-01-03 | Osram Opto Semiconductors Gmbh | Kantenemittierender Halbleiterlaserchip |
US7885306B2 (en) * | 2006-06-30 | 2011-02-08 | Osram Opto Semiconductors Gmbh | Edge-emitting semiconductor laser chip |
DE102007004303A1 (de) | 2006-08-04 | 2008-02-07 | Osram Opto Semiconductors Gmbh | Dünnfilm-Halbleiterbauelement und Bauelement-Verbund |
SG140473A1 (en) | 2006-08-16 | 2008-03-28 | Tinggi Tech Private Ltd | Improvements in external light efficiency of light emitting diodes |
US20080054291A1 (en) * | 2006-08-31 | 2008-03-06 | Samsung Electronics Co., Ltd. | Vertical semiconductor light-emitting device and method of manufacturing the same |
SG140512A1 (en) | 2006-09-04 | 2008-03-28 | Tinggi Tech Private Ltd | Electrical current distribution in light emitting devices |
US20080087875A1 (en) * | 2006-10-11 | 2008-04-17 | Feng-Hsu Fan | Protection for the epitaxial structure of metal devices |
DE102007004304A1 (de) | 2007-01-29 | 2008-07-31 | Osram Opto Semiconductors Gmbh | Dünnfilm-Leuchtdioden-Chip und Verfahren zur Herstellung eines Dünnfilm-Leuchtdioden-Chips |
US20080197369A1 (en) * | 2007-02-20 | 2008-08-21 | Cree, Inc. | Double flip semiconductor device and method for fabrication |
US8110425B2 (en) | 2007-03-20 | 2012-02-07 | Luminus Devices, Inc. | Laser liftoff structure and related methods |
JP4458116B2 (ja) | 2007-05-30 | 2010-04-28 | 住友電気工業株式会社 | エピタキシャル層成長用iii族窒化物半導体層貼り合わせ基板および半導体デバイス |
DE202007019495U1 (de) | 2007-06-06 | 2013-01-10 | Sumitomo Electric Industries, Ltd. | Substrat mit darauf aufgetragener GaN Dünnschicht und Halbleitervorrichtung auf GaN-Basis |
US11114594B2 (en) | 2007-08-24 | 2021-09-07 | Creeled, Inc. | Light emitting device packages using light scattering particles of different size |
JP2009054851A (ja) | 2007-08-28 | 2009-03-12 | Panasonic Corp | 半導体集積回路 |
US9431589B2 (en) | 2007-12-14 | 2016-08-30 | Cree, Inc. | Textured encapsulant surface in LED packages |
KR101428719B1 (ko) * | 2008-05-22 | 2014-08-12 | 삼성전자 주식회사 | 발광 소자 및 발광 장치의 제조 방법, 상기 방법을이용하여 제조한 발광 소자 및 발광 장치 |
US20100200880A1 (en) * | 2008-06-06 | 2010-08-12 | Hong Kong Applied Science And Technology Research Institute Co. Ltd. | Semiconductor wafers and semiconductor devices and methods of making semiconductor wafers and devices |
US8395168B2 (en) * | 2008-06-06 | 2013-03-12 | Hong Kong Applied Science And Technology Research Institute Co. Ltd. | Semiconductor wafers and semiconductor devices with polishing stops and method of making the same |
DE102009007625A1 (de) * | 2008-11-14 | 2010-05-20 | Osram Opto Semiconductors Gmbh | Verbundsubstrat für einen Halbleiterchip |
JP2010147446A (ja) | 2008-12-22 | 2010-07-01 | Panasonic Electric Works Co Ltd | 発光装置 |
US8580593B2 (en) | 2009-09-10 | 2013-11-12 | Micron Technology, Inc. | Epitaxial formation structures and associated methods of manufacturing solid state lighting devices |
WO2011069242A1 (en) * | 2009-12-09 | 2011-06-16 | Cooledge Lighting Inc. | Semiconductor dice transfer-enabling apparatus and method for manufacturing transfer-enabling apparatus |
US20110151588A1 (en) * | 2009-12-17 | 2011-06-23 | Cooledge Lighting, Inc. | Method and magnetic transfer stamp for transferring semiconductor dice using magnetic transfer printing techniques |
US8334152B2 (en) * | 2009-12-18 | 2012-12-18 | Cooledge Lighting, Inc. | Method of manufacturing transferable elements incorporating radiation enabled lift off for allowing transfer from host substrate |
US9161448B2 (en) | 2010-03-29 | 2015-10-13 | Semprius, Inc. | Laser assisted transfer welding process |
KR20110113822A (ko) | 2010-04-12 | 2011-10-19 | 서울옵토디바이스주식회사 | 결정 성장용 기판 어셈블리 및 이를 이용한 발광소자의 제조방법 |
US8476659B2 (en) * | 2010-07-15 | 2013-07-02 | Tsmc Solid State Lighting Ltd. | Light emitting device |
CN103222073B (zh) * | 2010-08-03 | 2017-03-29 | 财团法人工业技术研究院 | 发光二极管芯片、发光二极管封装结构、及用以形成上述的方法 |
US20120118222A1 (en) * | 2010-11-15 | 2012-05-17 | Sumitomo Electric Industries, Ltd. | METHOD OF MANUFACTURING GaN-BASED FILM |
JP5938871B2 (ja) * | 2010-11-15 | 2016-06-22 | 住友電気工業株式会社 | GaN系膜の製造方法 |
US8697564B2 (en) | 2010-11-16 | 2014-04-15 | Sumitomo Electric Industries, Ltd. | Method of manufacturing GaN-based film |
DE102010052727B4 (de) * | 2010-11-26 | 2019-01-31 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines optoelektronischen Halbleiterchips und derartiger Halbleiterchip |
DE102011012298A1 (de) * | 2010-12-28 | 2012-06-28 | Osram Opto Semiconductors Gmbh | Verbundsubstrat, Halbleiterchip mit Verbundsubstrat und Verfahren zur Herstellung von Verbundsubstraten und Halbleiterchips |
US9184228B2 (en) | 2011-03-07 | 2015-11-10 | Sumitomo Electric Industries, Ltd. | Composite base including sintered base and base surface flattening layer, and composite substrate including that composite base and semiconductor crystalline layer |
DE102011013821B4 (de) | 2011-03-14 | 2024-05-23 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung zumindest eines optoelektronischen Halbleiterchips |
US8241932B1 (en) | 2011-03-17 | 2012-08-14 | Tsmc Solid State Lighting Ltd. | Methods of fabricating light emitting diode packages |
CN102820393A (zh) * | 2011-06-10 | 2012-12-12 | 光达光电设备科技(嘉兴)有限公司 | 复合衬底结构及其制作方法 |
US9412727B2 (en) | 2011-09-20 | 2016-08-09 | Semprius, Inc. | Printing transferable components using microstructured elastomeric surfaces with pressure modulated reversible adhesion |
JP5695535B2 (ja) * | 2011-09-27 | 2015-04-08 | 株式会社東芝 | 表示装置の製造方法 |
US20130082239A1 (en) * | 2011-09-30 | 2013-04-04 | Microlink Devices, Inc. | Light emitting diode fabricated by epitaxial lift-off |
KR20140074142A (ko) * | 2011-10-07 | 2014-06-17 | 스미토모덴키고교가부시키가이샤 | GaN계 막의 제조 방법 및 그것에 이용되는 복합 기판 |
JP2013105975A (ja) * | 2011-11-16 | 2013-05-30 | Mitsubishi Electric Corp | 光半導体装置の製造方法 |
JP5585570B2 (ja) * | 2011-12-01 | 2014-09-10 | 住友電気工業株式会社 | ムライトを主成分とする焼結体 |
DE102012107409B4 (de) * | 2012-08-13 | 2022-06-15 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines Halbleiter-Laserelements |
US9082692B2 (en) | 2013-01-02 | 2015-07-14 | Micron Technology, Inc. | Engineered substrate assemblies with epitaxial templates and related systems, methods, and devices |
MY182253A (en) | 2014-07-20 | 2021-01-18 | X Celeprint Ltd | Apparatus and methods for micro-transfer-printing |
US9898611B2 (en) * | 2015-03-30 | 2018-02-20 | Rockwell Automation Technologies, Inc. | Method and apparatus for scrambling a high speed data transmission |
US9704821B2 (en) | 2015-08-11 | 2017-07-11 | X-Celeprint Limited | Stamp with structured posts |
US10468363B2 (en) | 2015-08-10 | 2019-11-05 | X-Celeprint Limited | Chiplets with connection posts |
US10103069B2 (en) | 2016-04-01 | 2018-10-16 | X-Celeprint Limited | Pressure-activated electrical interconnection by micro-transfer printing |
CN105891694B (zh) * | 2016-05-04 | 2018-12-28 | 中国工程物理研究院电子工程研究所 | 硅基半导体晶体管的激光模拟辐射剂量率效应试验方法 |
US10222698B2 (en) | 2016-07-28 | 2019-03-05 | X-Celeprint Limited | Chiplets with wicking posts |
US11064609B2 (en) | 2016-08-04 | 2021-07-13 | X Display Company Technology Limited | Printable 3D electronic structure |
CN108231695A (zh) * | 2016-12-15 | 2018-06-29 | 上海新微技术研发中心有限公司 | 复合衬底及其制造方法 |
DE102017108385A1 (de) | 2017-04-20 | 2018-10-25 | Osram Opto Semiconductors Gmbh | Laserbarren und Halbleiterlaser sowie Verfahren zur Herstellung von Laserbarren und Halbleiterlasern |
JP2019114650A (ja) * | 2017-12-22 | 2019-07-11 | Dowaエレクトロニクス株式会社 | 半導体発光素子およびその製造方法 |
FR3076075B1 (fr) * | 2017-12-22 | 2020-01-24 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de fabrication d'un dispositif electroluminescent |
WO2019203329A1 (ja) | 2018-04-19 | 2019-10-24 | Dowaエレクトロニクス株式会社 | 半導体発光素子およびその製造方法 |
CN111971805A (zh) * | 2018-04-19 | 2020-11-20 | 同和电子科技有限公司 | 半导体发光元件及其制造方法 |
US11469138B2 (en) * | 2018-05-04 | 2022-10-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Via for coupling attached component upper electrode to substrate |
WO2020011117A1 (zh) * | 2018-07-12 | 2020-01-16 | 江西兆驰半导体有限公司 | 一种提高光提取效率的紫外发光二极管芯片及其制作方法 |
US10748793B1 (en) | 2019-02-13 | 2020-08-18 | X Display Company Technology Limited | Printing component arrays with different orientations |
US11062936B1 (en) | 2019-12-19 | 2021-07-13 | X Display Company Technology Limited | Transfer stamps with multiple separate pedestals |
Citations (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63224213A (ja) * | 1987-03-12 | 1988-09-19 | Sumitomo Electric Ind Ltd | 薄膜単結晶シリコン基板 |
JPS6442813A (en) * | 1987-08-10 | 1989-02-15 | Sumitomo Electric Industries | Thin film single crystal substrate |
JPH01135070A (ja) * | 1987-11-20 | 1989-05-26 | Fujitsu Ltd | 半導体基板の製造方法 |
JPH0324771A (ja) * | 1989-06-21 | 1991-02-01 | Mitsubishi Monsanto Chem Co | 化合物半導体装置及びその表面処理加工方法 |
JPH04132274A (ja) * | 1990-09-21 | 1992-05-06 | Eastman Kodak Japan Kk | 発光ダイオード |
JPH0832116A (ja) * | 1994-07-19 | 1996-02-02 | Toyoda Gosei Co Ltd | 発光素子 |
JPH08307001A (ja) * | 1995-04-28 | 1996-11-22 | Mitsubishi Electric Corp | 半導体レ−ザダイオ−ドおよびその製造方法 |
JPH098403A (ja) * | 1995-06-15 | 1997-01-10 | Nichia Chem Ind Ltd | 窒化物半導体素子の製造方法及び窒化物半導体素子 |
JPH09129927A (ja) * | 1995-08-31 | 1997-05-16 | Toshiba Corp | 青色発光素子 |
JPH09129984A (ja) * | 1995-09-01 | 1997-05-16 | Toshiba Corp | 半導体素子及び半導体素子の製造方法 |
US5661074A (en) * | 1995-02-03 | 1997-08-26 | Advanced Technology Materials, Inc. | High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same |
JPH09223819A (ja) * | 1995-12-15 | 1997-08-26 | Toshiba Corp | 半導体発光素子及びその製造方法 |
JPH10114600A (ja) * | 1996-05-31 | 1998-05-06 | Sumitomo Electric Ind Ltd | 発光素子および発光素子用ウエハならびにその製造方法 |
JPH10223496A (ja) * | 1997-02-12 | 1998-08-21 | Ion Kogaku Kenkyusho:Kk | 単結晶ウエハおよびその製造方法 |
US5851905A (en) * | 1996-07-11 | 1998-12-22 | North Carolina State University | Methods of forming indium gallium nitride or aluminum indium gallium nitride using controlled hydrogen gas flows |
JPH10341036A (ja) * | 1997-04-09 | 1998-12-22 | Matsushita Electron Corp | 半導体基板、半導体素子及びそれらの製造方法 |
JPH1131842A (ja) * | 1997-07-10 | 1999-02-02 | Rohm Co Ltd | 半導体発光素子 |
JPH1168157A (ja) * | 1997-08-19 | 1999-03-09 | Sumitomo Electric Ind Ltd | 半導体発光素子及びその製造方法 |
EP0905797A2 (de) * | 1997-09-29 | 1999-03-31 | Siemens Aktiengesellschaft | Halbleiterlichtquelle und Verfahren zu ihrer Herstellung |
JPH11504764A (ja) * | 1995-05-08 | 1999-04-27 | クリー リサーチ インコーポレイテッド | 窒化ガリウム活性層を有する二重ヘテロ接合発光ダイオード |
JPH11145515A (ja) * | 1997-11-10 | 1999-05-28 | Mitsubishi Cable Ind Ltd | GaN系半導体発光素子およびその製造方法 |
JPH11154648A (ja) * | 1997-09-19 | 1999-06-08 | Siemens Ag | 複数の半導体チップの製造方法 |
JPH11284228A (ja) * | 1998-03-30 | 1999-10-15 | Toyoda Gosei Co Ltd | 半導体素子 |
US5985687A (en) * | 1996-04-12 | 1999-11-16 | The Regents Of The University Of California | Method for making cleaved facets for lasers fabricated with gallium nitride and other noncubic materials |
US6046464A (en) * | 1995-03-29 | 2000-04-04 | North Carolina State University | Integrated heterostructures of group III-V nitride semiconductor materials including epitaxial ohmic contact comprising multiple quantum well |
JP2000101139A (ja) * | 1998-09-25 | 2000-04-07 | Toshiba Corp | 半導体発光素子及びその製造方法並びに半導体発光装置 |
WO2000034989A1 (en) * | 1998-12-11 | 2000-06-15 | Nova Crystals, Inc. | Method for producing high quality heteroepitaxial growth using stress engineering and innovative substrates |
US6150239A (en) * | 1997-05-31 | 2000-11-21 | Max Planck Society | Method for the transfer of thin layers monocrystalline material onto a desirable substrate |
Family Cites Families (116)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3864819A (en) * | 1970-12-07 | 1975-02-11 | Hughes Aircraft Co | Method for fabricating semiconductor devices |
DE2716143A1 (de) * | 1977-04-12 | 1978-10-19 | Siemens Ag | Lichtemittierendes halbleiterbauelement |
FR2423869A1 (fr) * | 1978-04-21 | 1979-11-16 | Radiotechnique Compelec | Dispositif semiconducteur electroluminescent a recyclage de photons |
US4232440A (en) * | 1979-02-27 | 1980-11-11 | Bell Telephone Laboratories, Incorporated | Contact structure for light emitting device |
DE3041358A1 (de) | 1980-11-03 | 1982-06-09 | Siemens AG, 1000 Berlin und 8000 München | Lichtreflektirender ohmscher kontakt fuer bauelemente |
US4448636A (en) * | 1982-06-02 | 1984-05-15 | Texas Instruments Incorporated | Laser assisted lift-off |
DE3508469A1 (de) | 1985-03-09 | 1986-09-11 | Messerschmitt-Bölkow-Blohm GmbH, 8012 Ottobrunn | Verfahren zum strukturieren von auf einem transparenten substrat aufgebrachten schichtfolgen |
US5373171A (en) * | 1987-03-12 | 1994-12-13 | Sumitomo Electric Industries, Ltd. | Thin film single crystal substrate |
JPH0632249Y2 (ja) | 1987-09-04 | 1994-08-24 | 株式会社ミヤナガ | ドリル用穿孔案内装置 |
US4912532A (en) | 1988-08-26 | 1990-03-27 | Hewlett-Packard Company | Electro-optical device with inverted transparent substrate and method for making same |
US4918497A (en) * | 1988-12-14 | 1990-04-17 | Cree Research, Inc. | Blue light emitting diode formed in silicon carbide |
DE4038216A1 (de) | 1990-01-20 | 1991-07-25 | Telefunken Electronic Gmbh | Verfahren zur herstellung von leuchtdioden |
US5362667A (en) * | 1992-07-28 | 1994-11-08 | Harris Corporation | Bonded wafer processing |
US5210051A (en) * | 1990-03-27 | 1993-05-11 | Cree Research, Inc. | High efficiency light emitting diodes from bipolar gallium nitride |
US5102821A (en) * | 1990-12-20 | 1992-04-07 | Texas Instruments Incorporated | SOI/semiconductor heterostructure fabrication by wafer bonding of polysilicon to titanium |
FR2681472B1 (fr) * | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
JP3068914B2 (ja) | 1991-09-30 | 2000-07-24 | 株式会社東芝 | 気相成長装置 |
US5578839A (en) * | 1992-11-20 | 1996-11-26 | Nichia Chemical Industries, Ltd. | Light-emitting gallium nitride-based compound semiconductor device |
DE4305296C3 (de) * | 1993-02-20 | 1999-07-15 | Vishay Semiconductor Gmbh | Verfahren zum Herstellen einer strahlungsemittierenden Diode |
US5376580A (en) * | 1993-03-19 | 1994-12-27 | Hewlett-Packard Company | Wafer bonding of light emitting diode layers |
US5965698A (en) * | 1993-04-23 | 1999-10-12 | Virginia Commonwealth University | Polypeptides that include conformation-constraining groups which flank a protein--protein interaction site |
US5385632A (en) * | 1993-06-25 | 1995-01-31 | At&T Laboratories | Method for manufacturing integrated semiconductor devices |
US5753134A (en) * | 1994-01-04 | 1998-05-19 | Siemens Aktiengesellschaft | Method for producing a layer with reduced mechanical stresses |
US5679152A (en) | 1994-01-27 | 1997-10-21 | Advanced Technology Materials, Inc. | Method of making a single crystals Ga*N article |
JP2669368B2 (ja) * | 1994-03-16 | 1997-10-27 | 日本電気株式会社 | Si基板上化合物半導体積層構造の製造方法 |
US5523589A (en) | 1994-09-20 | 1996-06-04 | Cree Research, Inc. | Vertical geometry light emitting diode with group III nitride active layer and extended lifetime |
US5585648A (en) | 1995-02-03 | 1996-12-17 | Tischler; Michael A. | High brightness electroluminescent device, emitting in the green to ultraviolet spectrum, and method of making the same |
DE19506323A1 (de) | 1995-02-23 | 1996-08-29 | Siemens Ag | Halbleitervorrichtung mit aufgerauhter Halbleiteroberfläche |
JPH08250687A (ja) * | 1995-03-08 | 1996-09-27 | Komatsu Electron Metals Co Ltd | Soi基板の製造方法およびsoi基板 |
US5625202A (en) * | 1995-06-08 | 1997-04-29 | University Of Central Florida | Modified wurtzite structure oxide compounds as substrates for III-V nitride compound semiconductor epitaxial thin film growth |
US6046840A (en) * | 1995-06-19 | 2000-04-04 | Reflectivity, Inc. | Double substrate reflective spatial light modulator with self-limiting micro-mechanical elements |
US5798537A (en) * | 1995-08-31 | 1998-08-25 | Kabushiki Kaisha Toshiba | Blue light-emitting device |
DE69636088T2 (de) * | 1995-11-06 | 2006-11-23 | Nichia Corp., Anan | Halbleitervorrichtung aus einer Nitridverbindung |
US5917202A (en) * | 1995-12-21 | 1999-06-29 | Hewlett-Packard Company | Highly reflective contacts for light emitting semiconductor devices |
EP0817283A1 (en) * | 1996-01-19 | 1998-01-07 | Matsushita Electric Industrial Co., Ltd. | Gallium nitride compound semiconductor light emitting device and process for producing gallium nitride compound semiconductor |
US5874747A (en) * | 1996-02-05 | 1999-02-23 | Advanced Technology Materials, Inc. | High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same |
US5889295A (en) * | 1996-02-26 | 1999-03-30 | Kabushiki Kaisha Toshiba | Semiconductor device |
US5779924A (en) | 1996-03-22 | 1998-07-14 | Hewlett-Packard Company | Ordered interface texturing for a light emitting device |
JP3179346B2 (ja) * | 1996-08-27 | 2001-06-25 | 松下電子工業株式会社 | 窒化ガリウム結晶の製造方法 |
DE19640594B4 (de) * | 1996-10-01 | 2016-08-04 | Osram Gmbh | Bauelement |
US5836257A (en) | 1996-12-03 | 1998-11-17 | Mcdermott Technology, Inc. | Circulating fluidized bed furnace/reactor with an integral secondary air plenum |
US5880491A (en) * | 1997-01-31 | 1999-03-09 | The United States Of America As Represented By The Secretary Of The Air Force | SiC/111-V-nitride heterostructures on SiC/SiO2 /Si for optoelectronic devices |
JP3679914B2 (ja) * | 1997-02-12 | 2005-08-03 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
TW353202B (en) | 1997-02-28 | 1999-02-21 | Hewlett Packard Co | Scribe and break of hard-to-scribe materials |
KR100434242B1 (ko) | 1997-03-19 | 2004-06-04 | 샤프 가부시키가이샤 | 반도체 발광 소자 |
US6069394A (en) * | 1997-04-09 | 2000-05-30 | Matsushita Electronics Corporation | Semiconductor substrate, semiconductor device and method of manufacturing the same |
US6239033B1 (en) * | 1998-05-28 | 2001-05-29 | Sony Corporation | Manufacturing method of semiconductor device |
US6027988A (en) * | 1997-05-28 | 2000-02-22 | The Regents Of The University Of California | Method of separating films from bulk substrates by plasma immersion ion implantation |
US5955756A (en) * | 1997-05-29 | 1999-09-21 | International Business Machines Corporation | Trench separator for self-defining discontinuous film |
US5877070A (en) * | 1997-05-31 | 1999-03-02 | Max-Planck Society | Method for the transfer of thin layers of monocrystalline material to a desirable substrate |
JPH11154774A (ja) | 1997-08-05 | 1999-06-08 | Canon Inc | 面発光半導体デバイスの製造方法、この方法によって製造された面発光半導体デバイス及びこのデバイスを用いた表示装置 |
JP3457516B2 (ja) | 1997-08-27 | 2003-10-20 | 株式会社東芝 | 窒化ガリウム系化合物半導体素子 |
DE19838810B4 (de) * | 1998-08-26 | 2006-02-09 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen einer Mehrzahl von Ga(In,Al)N-Leuchtdiodenchips |
DE19741442A1 (de) * | 1997-09-19 | 1999-04-01 | Siemens Ag | Verfahren zum Herstellen einer Halbleitervorrichtung |
DE19743349C2 (de) | 1997-09-30 | 2000-05-18 | Siemens Ag | Verfahren zum Trennen von Halbleiterchips und Verwendung dieses Verfahrens |
US5972781A (en) * | 1997-09-30 | 1999-10-26 | Siemens Aktiengesellschaft | Method for producing semiconductor chips |
EP0926744B8 (en) * | 1997-12-15 | 2008-05-21 | Philips Lumileds Lighting Company, LLC. | Light emitting device |
US6071795A (en) * | 1998-01-23 | 2000-06-06 | The Regents Of The University Of California | Separation of thin films from transparent substrates by selective optical processing |
JPH11220170A (ja) | 1998-01-29 | 1999-08-10 | Rohm Co Ltd | 発光ダイオード素子 |
JPH11220171A (ja) | 1998-02-02 | 1999-08-10 | Toyoda Gosei Co Ltd | 窒化ガリウム系化合物半導体素子 |
JPH11251634A (ja) | 1998-02-27 | 1999-09-17 | Matsushita Electric Works Ltd | Led素子 |
US6347101B1 (en) * | 1998-04-16 | 2002-02-12 | 3D Systems, Inc. | Laser with absorption optimized pumping of a gain medium |
US6936859B1 (en) * | 1998-05-13 | 2005-08-30 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using group III nitride compound |
DE19921987B4 (de) | 1998-05-13 | 2007-05-16 | Toyoda Gosei Kk | Licht-Abstrahlende Halbleitervorrichtung mit Gruppe-III-Element-Nitrid-Verbindungen |
TW369731B (en) | 1998-05-29 | 1999-09-11 | Visual Photonics Epitaxy Co Ltd | Light-emitting diode (LED) with transparent glass or quartz as permanent substrate and process for the same |
JP3287458B2 (ja) * | 1998-06-24 | 2002-06-04 | 日本電気株式会社 | 超高速・低電圧駆動アバランシェ増倍型半導体受光素子 |
DE19829197C2 (de) * | 1998-06-30 | 2002-06-20 | Siemens Ag | Strahlungsaussendendes und/oder -empfangendes Bauelement |
US6319742B1 (en) * | 1998-07-29 | 2001-11-20 | Sanyo Electric Co., Ltd. | Method of forming nitride based semiconductor layer |
JP2000068556A (ja) | 1998-08-24 | 2000-03-03 | Nichia Chem Ind Ltd | 窒化物半導体ウエハの研削装置及び研削方法 |
JP2000077713A (ja) | 1998-08-27 | 2000-03-14 | Sanyo Electric Co Ltd | 半導体発光素子 |
US6291839B1 (en) * | 1998-09-11 | 2001-09-18 | Lulileds Lighting, U.S. Llc | Light emitting device having a finely-patterned reflective contact |
JP3201475B2 (ja) * | 1998-09-14 | 2001-08-20 | 松下電器産業株式会社 | 半導体装置およびその製造方法 |
JP4530234B2 (ja) | 1998-10-09 | 2010-08-25 | シャープ株式会社 | 半導体発光素子 |
JP3469484B2 (ja) * | 1998-12-24 | 2003-11-25 | 株式会社東芝 | 半導体発光素子およびその製造方法 |
US6744800B1 (en) * | 1998-12-30 | 2004-06-01 | Xerox Corporation | Method and structure for nitride based laser diode arrays on an insulating substrate |
US6328796B1 (en) * | 1999-02-01 | 2001-12-11 | The United States Of America As Represented By The Secretary Of The Navy | Single-crystal material on non-single-crystalline substrate |
US6320206B1 (en) * | 1999-02-05 | 2001-11-20 | Lumileds Lighting, U.S., Llc | Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks |
US20010042866A1 (en) * | 1999-02-05 | 2001-11-22 | Carrie Carter Coman | Inxalygazn optical emitters fabricated via substrate removal |
EP1035621B1 (en) * | 1999-02-11 | 2001-05-02 | Avalon Photonics Ltd | A semiconductor laser device and method for fabrication thereof |
JP2000323797A (ja) * | 1999-05-10 | 2000-11-24 | Pioneer Electronic Corp | 窒化物半導体レーザ及びその製造方法 |
US6222207B1 (en) * | 1999-05-24 | 2001-04-24 | Lumileds Lighting, U.S. Llc | Diffusion barrier for increased mirror reflectivity in reflective solderable contacts on high power LED chip |
US6133589A (en) * | 1999-06-08 | 2000-10-17 | Lumileds Lighting, U.S., Llc | AlGaInN-based LED having thick epitaxial layer for improved light extraction |
JP3675234B2 (ja) * | 1999-06-28 | 2005-07-27 | 豊田合成株式会社 | 半導体発光素子の製造方法 |
JP2001053336A (ja) * | 1999-08-05 | 2001-02-23 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体発光素子 |
JP2001111109A (ja) * | 1999-10-07 | 2001-04-20 | Sharp Corp | 窒化ガリウム系化合物半導体発光素子 |
US6812502B1 (en) * | 1999-11-04 | 2004-11-02 | Uni Light Technology Incorporation | Flip-chip light-emitting device |
JP3068914U (ja) | 1999-11-11 | 2000-05-26 | 洲磊科技股▲ふん▼有限公司 | フリップ―チップ発光デバイス |
US6614056B1 (en) | 1999-12-01 | 2003-09-02 | Cree Lighting Company | Scalable led with improved current spreading structures |
JP3893874B2 (ja) | 1999-12-21 | 2007-03-14 | 日亜化学工業株式会社 | 窒化物半導体発光素子の製造方法 |
US6514782B1 (en) | 1999-12-22 | 2003-02-04 | Lumileds Lighting, U.S., Llc | Method of making a III-nitride light-emitting device with increased light generating capability |
US6992334B1 (en) | 1999-12-22 | 2006-01-31 | Lumileds Lighting U.S., Llc | Multi-layer highly reflective ohmic contacts for semiconductor devices |
US6355497B1 (en) * | 2000-01-18 | 2002-03-12 | Xerox Corporation | Removable large area, low defect density films for led and laser diode growth |
JP2001217461A (ja) | 2000-02-04 | 2001-08-10 | Matsushita Electric Ind Co Ltd | 複合発光素子 |
DE10008583A1 (de) * | 2000-02-24 | 2001-09-13 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines optisch transparenten Substrates und Verfahren zum Herstellen eines lichtemittierenden Halbleiterchips |
JP4060511B2 (ja) * | 2000-03-28 | 2008-03-12 | パイオニア株式会社 | 窒化物半導体素子の分離方法 |
TW441859U (en) | 2000-04-12 | 2001-06-16 | Uni Light Technology Inc | Flip-chip light emitting diode device |
EP1277241B1 (de) * | 2000-04-26 | 2017-12-13 | OSRAM Opto Semiconductors GmbH | Lumineszenzdiodenchip auf der basis von gan |
WO2001082384A1 (de) * | 2000-04-26 | 2001-11-01 | Osram Opto Semiconductors Gmbh | Strahlungsmittierendes halbleiterbauelement und herstellungsverfahren |
TWI292227B (en) * | 2000-05-26 | 2008-01-01 | Osram Opto Semiconductors Gmbh | Light-emitting-dioed-chip with a light-emitting-epitaxy-layer-series based on gan |
US6563133B1 (en) * | 2000-08-09 | 2003-05-13 | Ziptronix, Inc. | Method of epitaxial-like wafer bonding at low temperature and bonded structure |
US6380564B1 (en) * | 2000-08-16 | 2002-04-30 | United Epitaxy Company, Ltd. | Semiconductor light emitting device |
DE10042947A1 (de) * | 2000-08-31 | 2002-03-21 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis |
US6518079B2 (en) * | 2000-12-20 | 2003-02-11 | Lumileds Lighting, U.S., Llc | Separation method for gallium nitride devices on lattice-mismatched substrates |
US6446571B1 (en) * | 2001-01-25 | 2002-09-10 | Printmark Industries, Inc. | Light reflecting warning kit for vehicles |
US6468824B2 (en) * | 2001-03-22 | 2002-10-22 | Uni Light Technology Inc. | Method for forming a semiconductor device having a metallic substrate |
US6555405B2 (en) * | 2001-03-22 | 2003-04-29 | Uni Light Technology, Inc. | Method for forming a semiconductor device having a metal substrate |
US6562701B2 (en) * | 2001-03-23 | 2003-05-13 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing nitride semiconductor substrate |
US6746889B1 (en) * | 2001-03-27 | 2004-06-08 | Emcore Corporation | Optoelectronic device with improved light extraction |
US6861130B2 (en) * | 2001-11-02 | 2005-03-01 | General Electric Company | Sintered polycrystalline gallium nitride and its production |
US6881261B2 (en) * | 2001-11-13 | 2005-04-19 | Matsushita Electric Industrial Co., Ltd. | Method for fabricating semiconductor device |
US6617261B2 (en) * | 2001-12-18 | 2003-09-09 | Xerox Corporation | Structure and method for fabricating GaN substrates from trench patterned GaN layers on sapphire substrates |
US6869820B2 (en) * | 2002-01-30 | 2005-03-22 | United Epitaxy Co., Ltd. | High efficiency light emitting diode and method of making the same |
WO2003076628A1 (fr) | 2002-03-12 | 2003-09-18 | Kumiai Chemical Industry Co., Ltd. | Gene de scytalone deshydrogenase presentant une tolerance aux pesticides agricoles |
US20040104395A1 (en) | 2002-11-28 | 2004-06-03 | Shin-Etsu Handotai Co., Ltd. | Light-emitting device, method of fabricating the same, and OHMIC electrode structure for semiconductor device |
JP4217093B2 (ja) * | 2003-03-27 | 2009-01-28 | スタンレー電気株式会社 | 半導体発光素子及びその製造方法 |
JP4223330B2 (ja) | 2003-06-12 | 2009-02-12 | 日本電信電話株式会社 | 親機と子機間の認証方法、親機及び子機、ならびに、コンピュータプログラム |
-
2000
- 2000-10-17 DE DE10051465A patent/DE10051465A1/de not_active Ceased
-
2001
- 2001-10-08 CN CNB018175066A patent/CN100377368C/zh not_active Expired - Lifetime
- 2001-10-08 WO PCT/DE2001/003851 patent/WO2002033760A1/de active Application Filing
- 2001-10-08 EP EP01987950.1A patent/EP1327267B1/de not_active Expired - Lifetime
- 2001-10-08 JP JP2002537058A patent/JP2004512688A/ja active Pending
- 2001-10-16 TW TW090125526A patent/TW513818B/zh not_active IP Right Cessation
-
2003
- 2003-04-17 US US10/417,611 patent/US7691656B2/en not_active Expired - Fee Related
-
2006
- 2006-11-07 JP JP2006301854A patent/JP2007073986A/ja active Pending
-
2009
- 2009-12-29 US US12/648,566 patent/US8129209B2/en not_active Expired - Fee Related
-
2012
- 2012-02-16 US US13/398,425 patent/US8809086B2/en not_active Expired - Fee Related
Patent Citations (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63224213A (ja) * | 1987-03-12 | 1988-09-19 | Sumitomo Electric Ind Ltd | 薄膜単結晶シリコン基板 |
JPS6442813A (en) * | 1987-08-10 | 1989-02-15 | Sumitomo Electric Industries | Thin film single crystal substrate |
JPH01135070A (ja) * | 1987-11-20 | 1989-05-26 | Fujitsu Ltd | 半導体基板の製造方法 |
JPH0324771A (ja) * | 1989-06-21 | 1991-02-01 | Mitsubishi Monsanto Chem Co | 化合物半導体装置及びその表面処理加工方法 |
JPH04132274A (ja) * | 1990-09-21 | 1992-05-06 | Eastman Kodak Japan Kk | 発光ダイオード |
JPH0832116A (ja) * | 1994-07-19 | 1996-02-02 | Toyoda Gosei Co Ltd | 発光素子 |
US5661074A (en) * | 1995-02-03 | 1997-08-26 | Advanced Technology Materials, Inc. | High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same |
US6046464A (en) * | 1995-03-29 | 2000-04-04 | North Carolina State University | Integrated heterostructures of group III-V nitride semiconductor materials including epitaxial ohmic contact comprising multiple quantum well |
JPH08307001A (ja) * | 1995-04-28 | 1996-11-22 | Mitsubishi Electric Corp | 半導体レ−ザダイオ−ドおよびその製造方法 |
JPH11504764A (ja) * | 1995-05-08 | 1999-04-27 | クリー リサーチ インコーポレイテッド | 窒化ガリウム活性層を有する二重ヘテロ接合発光ダイオード |
JPH098403A (ja) * | 1995-06-15 | 1997-01-10 | Nichia Chem Ind Ltd | 窒化物半導体素子の製造方法及び窒化物半導体素子 |
JPH09129927A (ja) * | 1995-08-31 | 1997-05-16 | Toshiba Corp | 青色発光素子 |
JPH09129984A (ja) * | 1995-09-01 | 1997-05-16 | Toshiba Corp | 半導体素子及び半導体素子の製造方法 |
JPH09223819A (ja) * | 1995-12-15 | 1997-08-26 | Toshiba Corp | 半導体発光素子及びその製造方法 |
US5985687A (en) * | 1996-04-12 | 1999-11-16 | The Regents Of The University Of California | Method for making cleaved facets for lasers fabricated with gallium nitride and other noncubic materials |
JPH10114600A (ja) * | 1996-05-31 | 1998-05-06 | Sumitomo Electric Ind Ltd | 発光素子および発光素子用ウエハならびにその製造方法 |
US5851905A (en) * | 1996-07-11 | 1998-12-22 | North Carolina State University | Methods of forming indium gallium nitride or aluminum indium gallium nitride using controlled hydrogen gas flows |
JPH10223496A (ja) * | 1997-02-12 | 1998-08-21 | Ion Kogaku Kenkyusho:Kk | 単結晶ウエハおよびその製造方法 |
JPH10341036A (ja) * | 1997-04-09 | 1998-12-22 | Matsushita Electron Corp | 半導体基板、半導体素子及びそれらの製造方法 |
US6150239A (en) * | 1997-05-31 | 2000-11-21 | Max Planck Society | Method for the transfer of thin layers monocrystalline material onto a desirable substrate |
JPH1131842A (ja) * | 1997-07-10 | 1999-02-02 | Rohm Co Ltd | 半導体発光素子 |
JPH1168157A (ja) * | 1997-08-19 | 1999-03-09 | Sumitomo Electric Ind Ltd | 半導体発光素子及びその製造方法 |
JPH11154648A (ja) * | 1997-09-19 | 1999-06-08 | Siemens Ag | 複数の半導体チップの製造方法 |
EP0905797A2 (de) * | 1997-09-29 | 1999-03-31 | Siemens Aktiengesellschaft | Halbleiterlichtquelle und Verfahren zu ihrer Herstellung |
JPH11145515A (ja) * | 1997-11-10 | 1999-05-28 | Mitsubishi Cable Ind Ltd | GaN系半導体発光素子およびその製造方法 |
JPH11284228A (ja) * | 1998-03-30 | 1999-10-15 | Toyoda Gosei Co Ltd | 半導体素子 |
JP2000101139A (ja) * | 1998-09-25 | 2000-04-07 | Toshiba Corp | 半導体発光素子及びその製造方法並びに半導体発光装置 |
WO2000034989A1 (en) * | 1998-12-11 | 2000-06-15 | Nova Crystals, Inc. | Method for producing high quality heteroepitaxial growth using stress engineering and innovative substrates |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007180302A (ja) * | 2005-12-28 | 2007-07-12 | Rohm Co Ltd | 窒化物半導体発光素子及び窒化物半導体発光素子製造方法 |
JP2010021546A (ja) * | 2008-07-08 | 2010-01-28 | Seoul Opto Devices Co Ltd | 発光素子及びその製造方法 |
Also Published As
Publication number | Publication date |
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US8129209B2 (en) | 2012-03-06 |
US20100200864A1 (en) | 2010-08-12 |
US20120211787A1 (en) | 2012-08-23 |
DE10051465A1 (de) | 2002-05-02 |
JP2004512688A (ja) | 2004-04-22 |
CN1471733A (zh) | 2004-01-28 |
US7691656B2 (en) | 2010-04-06 |
TW513818B (en) | 2002-12-11 |
US20040033638A1 (en) | 2004-02-19 |
US8809086B2 (en) | 2014-08-19 |
CN100377368C (zh) | 2008-03-26 |
WO2002033760A1 (de) | 2002-04-25 |
EP1327267B1 (de) | 2017-12-06 |
EP1327267A1 (de) | 2003-07-16 |
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