JPS6442813A - Thin film single crystal substrate - Google Patents
Thin film single crystal substrateInfo
- Publication number
- JPS6442813A JPS6442813A JP20046087A JP20046087A JPS6442813A JP S6442813 A JPS6442813 A JP S6442813A JP 20046087 A JP20046087 A JP 20046087A JP 20046087 A JP20046087 A JP 20046087A JP S6442813 A JPS6442813 A JP S6442813A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- aluminum
- zinc
- indium
- gallium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE:To obtain a substrate with a large heat conduction rate and small heat expansion coefficient which is superb in heat resistance and environment resistance by forming a single crystal layer of semiconductor material on a diamond single crystal base material. CONSTITUTION:At least one layer single crystal layer 2 consisting of at least one type which is selected from the following group is formed on a diamond single crystal base material 1, namely, silicon carbide, silicon, silicon nitride, gallium silicate, indium silicate, aluminum silicate, boron phosphide, zinc sulfide, zinc oxide, cadmium sulfide, cadmium selenide, germanium, gallium arsenide, gallium phosphide, indium phosphide, gallium antimonide, indium arsenide, indium antimonide, aluminum phosphide, aluminum arsende, aluminum antimonide, cadmium telluride, mercury sulfide, zinc sulfide, zinc selenide, and zinc telluride. It allows a substrate with superb heat resistance and environment resistance to be obtained.
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62200460A JP2664056B2 (en) | 1987-08-10 | 1987-08-10 | Thin film single crystal substrate |
US07/165,734 US5373171A (en) | 1987-03-12 | 1988-03-09 | Thin film single crystal substrate |
EP94111001A EP0635874B1 (en) | 1987-03-12 | 1988-03-11 | Thin film single crystal substrate |
DE3856475T DE3856475T2 (en) | 1987-03-12 | 1988-03-11 | Monocrystalline thin film substrate |
EP94106060A EP0619599B1 (en) | 1987-03-12 | 1988-03-11 | Thin film single crystal substrate |
DE3856278T DE3856278T2 (en) | 1987-03-12 | 1988-03-11 | Monocrystalline thin film substrate |
EP88103887A EP0282075B1 (en) | 1987-03-12 | 1988-03-11 | Thin film single crystal substrate |
DE3852960T DE3852960T2 (en) | 1987-03-12 | 1988-03-11 | Monocrystalline thin film substrate. |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62200460A JP2664056B2 (en) | 1987-08-10 | 1987-08-10 | Thin film single crystal substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6442813A true JPS6442813A (en) | 1989-02-15 |
JP2664056B2 JP2664056B2 (en) | 1997-10-15 |
Family
ID=16424673
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62200460A Expired - Fee Related JP2664056B2 (en) | 1987-03-12 | 1987-08-10 | Thin film single crystal substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2664056B2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04242922A (en) * | 1991-01-08 | 1992-08-31 | Kobe Steel Ltd | Method for forming ohmic electrode to thin diamond film |
US5909036A (en) * | 1996-06-25 | 1999-06-01 | Sumitomo Electric Industries, Ltd. | Group III-V nitride semiconductor device |
JP2007073986A (en) * | 2000-10-17 | 2007-03-22 | Osram Opto Semiconductors Gmbh | METHOD FOR MANUFACTURING GaN-BASED SEMICONDUCTOR DEVICE |
JP2011014938A (en) * | 2000-04-26 | 2011-01-20 | Osram Opto Semiconductors Gmbh | Light emitting semiconductor element and method of manufacturing light emitting semiconductor element |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01503583A (en) * | 1987-06-02 | 1989-11-30 | トムソン‐セーエスエフ | Semiconductor device formed on substrates with different lattice parameters, application to laser, and manufacturing method |
-
1987
- 1987-08-10 JP JP62200460A patent/JP2664056B2/en not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01503583A (en) * | 1987-06-02 | 1989-11-30 | トムソン‐セーエスエフ | Semiconductor device formed on substrates with different lattice parameters, application to laser, and manufacturing method |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04242922A (en) * | 1991-01-08 | 1992-08-31 | Kobe Steel Ltd | Method for forming ohmic electrode to thin diamond film |
US5909036A (en) * | 1996-06-25 | 1999-06-01 | Sumitomo Electric Industries, Ltd. | Group III-V nitride semiconductor device |
JP2011014938A (en) * | 2000-04-26 | 2011-01-20 | Osram Opto Semiconductors Gmbh | Light emitting semiconductor element and method of manufacturing light emitting semiconductor element |
JP2007073986A (en) * | 2000-10-17 | 2007-03-22 | Osram Opto Semiconductors Gmbh | METHOD FOR MANUFACTURING GaN-BASED SEMICONDUCTOR DEVICE |
Also Published As
Publication number | Publication date |
---|---|
JP2664056B2 (en) | 1997-10-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |