JPS6442813A - Thin film single crystal substrate - Google Patents

Thin film single crystal substrate

Info

Publication number
JPS6442813A
JPS6442813A JP20046087A JP20046087A JPS6442813A JP S6442813 A JPS6442813 A JP S6442813A JP 20046087 A JP20046087 A JP 20046087A JP 20046087 A JP20046087 A JP 20046087A JP S6442813 A JPS6442813 A JP S6442813A
Authority
JP
Japan
Prior art keywords
single crystal
aluminum
zinc
indium
gallium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20046087A
Other languages
Japanese (ja)
Other versions
JP2664056B2 (en
Inventor
Takahiro Imai
Naoharu Fujimori
Hideaki Nakahata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP62200460A priority Critical patent/JP2664056B2/en
Priority to US07/165,734 priority patent/US5373171A/en
Priority to EP94106060A priority patent/EP0619599B1/en
Priority to EP94111001A priority patent/EP0635874B1/en
Priority to DE3856475T priority patent/DE3856475T2/en
Priority to DE3856278T priority patent/DE3856278T2/en
Priority to EP88103887A priority patent/EP0282075B1/en
Priority to DE3852960T priority patent/DE3852960T2/en
Publication of JPS6442813A publication Critical patent/JPS6442813A/en
Application granted granted Critical
Publication of JP2664056B2 publication Critical patent/JP2664056B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To obtain a substrate with a large heat conduction rate and small heat expansion coefficient which is superb in heat resistance and environment resistance by forming a single crystal layer of semiconductor material on a diamond single crystal base material. CONSTITUTION:At least one layer single crystal layer 2 consisting of at least one type which is selected from the following group is formed on a diamond single crystal base material 1, namely, silicon carbide, silicon, silicon nitride, gallium silicate, indium silicate, aluminum silicate, boron phosphide, zinc sulfide, zinc oxide, cadmium sulfide, cadmium selenide, germanium, gallium arsenide, gallium phosphide, indium phosphide, gallium antimonide, indium arsenide, indium antimonide, aluminum phosphide, aluminum arsende, aluminum antimonide, cadmium telluride, mercury sulfide, zinc sulfide, zinc selenide, and zinc telluride. It allows a substrate with superb heat resistance and environment resistance to be obtained.
JP62200460A 1987-03-12 1987-08-10 Thin film single crystal substrate Expired - Fee Related JP2664056B2 (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP62200460A JP2664056B2 (en) 1987-08-10 1987-08-10 Thin film single crystal substrate
US07/165,734 US5373171A (en) 1987-03-12 1988-03-09 Thin film single crystal substrate
EP94111001A EP0635874B1 (en) 1987-03-12 1988-03-11 Thin film single crystal substrate
DE3856475T DE3856475T2 (en) 1987-03-12 1988-03-11 Monocrystalline thin film substrate
EP94106060A EP0619599B1 (en) 1987-03-12 1988-03-11 Thin film single crystal substrate
DE3856278T DE3856278T2 (en) 1987-03-12 1988-03-11 Monocrystalline thin film substrate
EP88103887A EP0282075B1 (en) 1987-03-12 1988-03-11 Thin film single crystal substrate
DE3852960T DE3852960T2 (en) 1987-03-12 1988-03-11 Monocrystalline thin film substrate.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62200460A JP2664056B2 (en) 1987-08-10 1987-08-10 Thin film single crystal substrate

Publications (2)

Publication Number Publication Date
JPS6442813A true JPS6442813A (en) 1989-02-15
JP2664056B2 JP2664056B2 (en) 1997-10-15

Family

ID=16424673

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62200460A Expired - Fee Related JP2664056B2 (en) 1987-03-12 1987-08-10 Thin film single crystal substrate

Country Status (1)

Country Link
JP (1) JP2664056B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04242922A (en) * 1991-01-08 1992-08-31 Kobe Steel Ltd Method for forming ohmic electrode to thin diamond film
US5909036A (en) * 1996-06-25 1999-06-01 Sumitomo Electric Industries, Ltd. Group III-V nitride semiconductor device
JP2007073986A (en) * 2000-10-17 2007-03-22 Osram Opto Semiconductors Gmbh METHOD FOR MANUFACTURING GaN-BASED SEMICONDUCTOR DEVICE
JP2011014938A (en) * 2000-04-26 2011-01-20 Osram Opto Semiconductors Gmbh Light emitting semiconductor element and method of manufacturing light emitting semiconductor element

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01503583A (en) * 1987-06-02 1989-11-30 トムソン‐セーエスエフ Semiconductor device formed on substrates with different lattice parameters, application to laser, and manufacturing method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01503583A (en) * 1987-06-02 1989-11-30 トムソン‐セーエスエフ Semiconductor device formed on substrates with different lattice parameters, application to laser, and manufacturing method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04242922A (en) * 1991-01-08 1992-08-31 Kobe Steel Ltd Method for forming ohmic electrode to thin diamond film
US5909036A (en) * 1996-06-25 1999-06-01 Sumitomo Electric Industries, Ltd. Group III-V nitride semiconductor device
JP2011014938A (en) * 2000-04-26 2011-01-20 Osram Opto Semiconductors Gmbh Light emitting semiconductor element and method of manufacturing light emitting semiconductor element
JP2007073986A (en) * 2000-10-17 2007-03-22 Osram Opto Semiconductors Gmbh METHOD FOR MANUFACTURING GaN-BASED SEMICONDUCTOR DEVICE

Also Published As

Publication number Publication date
JP2664056B2 (en) 1997-10-15

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees