JP6049784B2 - 炭化珪素半導体装置およびその製造方法 - Google Patents
炭化珪素半導体装置およびその製造方法 Download PDFInfo
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- JP6049784B2 JP6049784B2 JP2015042399A JP2015042399A JP6049784B2 JP 6049784 B2 JP6049784 B2 JP 6049784B2 JP 2015042399 A JP2015042399 A JP 2015042399A JP 2015042399 A JP2015042399 A JP 2015042399A JP 6049784 B2 JP6049784 B2 JP 6049784B2
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- 239000004065 semiconductor Substances 0.000 title claims description 66
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 40
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 38
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 230000001681 protective effect Effects 0.000 claims description 161
- 239000010410 layer Substances 0.000 claims description 141
- 238000009792 diffusion process Methods 0.000 claims description 68
- 230000002093 peripheral effect Effects 0.000 claims description 31
- 239000011229 interlayer Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 18
- 239000012535 impurity Substances 0.000 claims description 10
- 238000000059 patterning Methods 0.000 claims description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 9
- 229920005591 polysilicon Polymers 0.000 claims description 9
- 239000011159 matrix material Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 238000005530 etching Methods 0.000 description 13
- 229910052814 silicon oxide Inorganic materials 0.000 description 13
- 239000000758 substrate Substances 0.000 description 11
- 238000006073 displacement reaction Methods 0.000 description 9
- 230000005684 electric field Effects 0.000 description 9
- 230000015556 catabolic process Effects 0.000 description 8
- 238000002513 implantation Methods 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000000149 penetrating effect Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 210000000746 body region Anatomy 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
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Description
図1および図2は、実施の形態1に係る半導体装置の構成を示す図である。ここでは半導体装置の一例として、炭化珪素(SiC)半導体装置であるトレンチゲート型MOSFETを示す。図1は当該MOSFETの平面図である。図2(a)は、図1のA−A線に沿った断面図であり、MOSFETセルの形成領域(MOSFETセル領域)を示している。一方、図2(b)は図1のB−B線に沿った断面図であり、保護拡散層に接続するコンタクト(保護コンタクト)の形成領域20(保護コンタクト領域)を含んでいる。保護コンタクト領域20の詳細については後述する。
実施の形態1で説明したように、ゲート電極7は、パターニングおよびエッチバックのいずれの手法でも形成できる。しかし、保護コンタクト領域20のトレンチ5がテーパー状に形成された場合、エッチバックによりゲート電極7を形成しようとすると、保護コンタクト領域20のトレンチ5内に配設されるゲート電極7が完全に除去される恐れがある。
図13は、本発明の実施の形態3に係る半導体装置の構成を示す断面図であり、当該半導体装置のMOSFETセルアレイの最外周部の断面を示している。本実施の形態では、最外周のMOSFETセルのさらに外側に隣り合うように、MOSFETとして機能しないダミーセル30を配設している。ダミーセル30は、MOSFETセルアレイを囲うように配置される。MOSFETセルアレイ(保護コンタクト領域20を含む)の最外周部以外の構成は、実施の形態1または2と同様である。
図14は、本発明の実施の形態4に係る半導体装置の構成を示す断面図であり、当該半導体装置のMOSFETセルアレイの最外周部の断面を示している。本実施の形態では、最外周のMOSFETセルの外側を囲うように、保護コンタクト21が配設される最外周保護コンタクト領域40を設けている。MOSFETセルアレイ(保護コンタクト領域20を含む)の最外周部以外の構成は、実施の形態1または2と同様である。
Claims (9)
- マトリクス状に配列された複数の区画うちの少なくとも1つの区画である保護コンタクト領域を有する炭化珪素半導体装置において、
第1導電型の炭化珪素半導体層と、
前記炭化珪素半導体層の上部に形成された第2導電型のベース領域と、
前記ベース領域を貫通するように前記炭化珪素半導体層に平面視で格子状に形成されたトレンチ内に形成され、前記ベース領域を前記複数の区画のうち前記保護コンタクト領域に対応する部分が欠けた区画に区切るゲート電極と、
前記ゲート電極の側面および底面に形成されたゲート絶縁膜と、
前記ベース領域の上部において前記ゲート絶縁膜を介して前記ゲート電極と接するように形成された第1導電型のソース領域と、
前記ソース領域および前記ベース領域に接続するソース電極と、
前記ゲート絶縁膜の下部と前記保護コンタクト領域内の前記炭化珪素半導体層とに形成された第2導電型の保護拡散層と、
を備え、
前記ゲート絶縁膜の下部に形成された前記保護拡散層と、前記保護コンタクト領域に形成された前記保護拡散層とが繋がっており、
前記ソース電極は、前記保護コンタクト領域において、前記ベース領域を貫通し、前記保護コンタクト領域に形成された前記保護拡散層と接続する、
炭化珪素半導体装置。 - 前記複数の区画には、少なくとも3列×3行の9つの区画が含まれ、
前記保護コンタクト領域は、前記9つの区画の中心に形成される、
ことを特徴とする請求項1に記載の炭化珪素半導体装置。 - 前記保護コンタクト領域の全体で前記炭化珪素半導体層に開口が形成されており、
前記ソース電極は、前記開口内に形成される、
ことを特徴とする請求項1又は2に記載の炭化珪素半導体装置。 - 前記ゲート電極は、前記開口内の外周部においても形成されている、
ことを特徴とする請求項3に記載の炭化珪素半導体装置。 - 第1導電型の炭化珪素半導体層の上部に第2導電型のベース領域を形成する工程と、
前記ベース領域の上部に第1導電型のソース領域を形成する工程と、
セル領域において、前記炭化珪素半導体層に前記ソース領域および前記ベース領域よりも深いトレンチを形成する工程と、
保護コンタクト領域において、前記炭化珪素半導体層に前記ソース領域および前記ベース領域よりも深い開口を形成する工程と、
前記トレンチの底部と前記開口の底部に第2導電型の保護拡散層を形成する工程と、
前記炭化珪素半導体層の全面に酸化膜を形成する工程と、
前記酸化膜上にポリシリコンを形成する工程と、
前記ポリシリコンを形成する工程後に、前記ベース領域上の前記ポリシリコンを除去する工程と、
前記ベース領域上の前記ポリシリコンを除去する工程と同時に、前記保護コンタクト領域の保護コンタクトを形成する領域における前記ポリシリコンを除去する工程と、
前記ポリシリコンを除去する工程後に、前記保護コンタクト領域において前記保護拡散層に達する第2コンタクトホールを有する層間絶縁膜を形成する工程と、
前記第2コンタクトホール内にソース電極を形成することで、前記保護コンタクト領域の前記保護拡散層と前記ソース電極とが接続する前記保護コンタクトを形成する工程と、
を備え、
前記トレンチの底部に形成された前記保護拡散層と前記開口の底部に形成された前記保護拡散層とが繋がっている、炭化珪素半導体装置の製造方法。 - 前記層間絶縁膜は、前記ソース領域及び前記ベース領域に達する第1コンタクトホールをさらに有し、
前記層間絶縁膜を形成する工程において、前記第1コンタクトホールは前記第2コンタクトホールのパターニング形成と同時にパターニング形成される、
ことを特徴とする請求項5に記載の炭化珪素半導体装置の製造方法。 - 前記トレンチを形成する工程において、前記トレンチは格子状に形成される、
ことを特徴とする請求項5又は6に記載の炭化珪素半導体装置の製造方法。 - 前記トレンチを形成する工程は、前記開口を形成する工程と同時に実施される、
ことを特徴とする請求項5から7のいずれか一項に記載の炭化珪素半導体装置の製造方法。 - 前記保護拡散層を形成する工程は、前記トレンチを形成する工程の後であって、かつ前記開口を形成する工程の後に、前記トレンチの底部と前記開口の底部とにおける前記炭化珪素半導体層に第2導電型の不純物を注入することによって前記保護拡散層を形成する、
ことを特徴とする請求項5から8のいずれか一項に記載の炭化珪素半導体装置の製造方法。
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