JP4453671B2 - 絶縁ゲート型半導体装置およびその製造方法 - Google Patents
絶縁ゲート型半導体装置およびその製造方法 Download PDFInfo
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Description
第1の形態に係る絶縁ゲート型半導体装置100(以下,「半導体装置100」とする)は,図1の平面透視図および図2の断面図に示す構造を有している。なお,本明細書においては,出発基板と,出発基板上にエピタキシャル成長により形成した単結晶シリコンの部分とを合わせた全体を半導体基板と呼ぶこととする。
本形態の応用例を図8に示す。応用例にかかる半導体装置110は,ゲートトレンチ21の底部の周囲に,断面が縦長の楕円形状であるP拡散領域510を有している。P拡散領域510の断面形状を縦長の形状とすることで,N- ドリフト領域12内に広がる空乏層の層厚を前述した半導体装置100(図2)と比較して厚くすることができる。よって,本形態の半導体装置110は,半導体装置100と比較して高耐圧である。
第2の形態の半導体装置200は,図9に示すように,長手方向に3分されたレイアウトとなるゲートトレンチ21を形成する。半導体装置200では,ゲートトレンチ21が複数の小トレンチに分割されたようなレイアウトとすることで,端部210の数が第1の形態よりも多い。すなわち,端部210は,第1の形態では長手方向上に2箇所であるが,本形態では長手方向上に6箇所となる。
第3の形態の半導体装置300は,図14に示すように,ゲートトレンチ21の一方側の側面の周囲に,N- ドリフト領域12に囲まれたP--拡散領域54が形成されている。P--拡散領域54は,第1の形態と同様に,その上端がP- ボディ領域41と繋がり,下端がP拡散領域51と繋がっている。すなわち,P--拡散領域54は,ホールの供給路となる。本形態の半導体装置300は,ホールの供給路がゲートトレンチ21の側面部であるかそれとも端部であるかが第1の形態と異なる。なお,P--拡散領域54の位置は,ゲートトレンチ21の左側側面であっても右側側面であってもよい。
第4の形態の半導体装置400は,図16に示すように,N- ドリフト領域12内にフローティング状態のP拡散領域51が形成されている。そして,ゲートトレンチ21の下端は,P拡散領域51内に位置している。本形態の半導体装置400は,P拡散領域51がフローティング状態であり,P- ボディ領域41と繋がるP拡散領域は形成されていない。すなわち,半導体装置400はフローティング構造を有しており,P拡散領域51に対するホールの供給路は設けられていない。この点,ホールを供給することによってオン抵抗特性の改善を図る第1の形態と異なる。
本形態の応用例1を図19に示す。応用例1にかかる半導体装置410は,エピタキシャル層10の比抵抗(濃度)を縦方向になだらかに変化させる。すなわち,濃度分布を広範囲で変化させる。また,濃度を変化させる開始位置を限定している。この2点に特徴を有している。
本形態の応用例2を図23に示す。応用例2にかかる半導体装置420は,N- ドリフト領域12の一部の領域,具体的にはP拡散領域51の周辺の不純物濃度を高くし,それ以外の領域の不純物濃度を低くする。この点,縦方向にエピタキシャル層10の比抵抗(濃度)が異なる層を有する半導体装置400と異なる。
10a 低濃度層(低濃度領域)
10b 高濃度層(高濃度領域)
10c 標準濃度層
10d 中間層(傾斜濃度領域)
11 N+ ドレイン領域
12 N- ドリフト領域(ドリフト領域)
21 ゲートトレンチ(トレンチ部)
22 ゲート電極(ゲート電極)
23 堆積絶縁層
24 ゲート絶縁膜(ゲート絶縁膜)
26 ゲートトレンチ
31 N+ ソース領域
41 P- ボディ領域(ボディ領域)
51 P拡散領域(埋め込み拡散領域)
52 P--拡散領域(低濃度拡散領域)
53 P拡散領域
54 P--拡散領域(低濃度拡散領域)
62 終端トレンチ
100 絶縁ゲート型半導体装置
Claims (13)
- 半導体基板内の上面側に位置し第1導電型半導体であるボディ領域と,前記ボディ領域の下面と接し第2導電型半導体であるドリフト領域とを有する絶縁ゲート型半導体装置において,
半導体基板の上面から前記ボディ領域を貫通するトレンチ部と,
前記トレンチ部の側壁に位置するゲート絶縁膜と,
前記トレンチ部内に位置し,前記ボディ領域と前記ゲート絶縁膜を挟んで対面するゲート電極と,
前記ゲート電極よりも下方に位置し,前記ドリフト領域に囲まれるとともに前記トレンチ部の底部を包囲し,第1導電型半導体である埋め込み拡散領域と,
前記ボディ領域および前記埋め込み拡散領域と連接し,前記埋め込み拡散領域よりも低濃度であり,第1導電型半導体である低濃度拡散領域とを有することを特徴とする絶縁ゲート型半導体装置。 - 請求項1に記載する絶縁ゲート型半導体装置において,
前記低濃度拡散領域は,ゲート電圧のオフ時に,厚さ方向の少なくとも一部の領域が前記埋め込み拡散領域よりも先に空乏化されることを特徴とする絶縁ゲート型半導体装置。 - 請求項1に記載する絶縁ゲート型半導体装置において,
前記低濃度拡散領域は,リサーフ構造を有することを特徴とする絶縁ゲート型半導体装置。 - 請求項1から請求項3のいずれか1つに記載する絶縁ゲート型半導体装置において,
前記低濃度拡散領域は,前記トレンチ部の上面視長手方向の端部の側面に接していることを特徴とする絶縁ゲート型半導体装置。 - 請求項1から請求項3のいずれか1つに記載する絶縁ゲート型半導体装置において,
前記低濃度拡散領域は,前記トレンチ部の上面視長手方向に直交する断面から見て,前記トレンチ部の一方の側面に接していることを特徴とする絶縁ゲート型半導体装置。 - 請求項5に記載する絶縁ゲート型半導体装置において,
前記低濃度拡散領域と前記ボディ領域との繋ぎ目部分の領域のエピタキシャル層の濃度がそのエピタキシャル層の他の領域と比較して高いことを特徴とする絶縁ゲート型半導体装置。 - 請求項1から請求項3のいずれか1つに記載する絶縁ゲート型半導体装置において,
前記トレンチ部は,上面視長手方向に複数個の小トレンチ部に分割されたレイアウトとなっており,
前記低濃度拡散領域は,前記小トレンチ部の各端部に接していることを特徴とする絶縁ゲート型半導体装置。 - 請求項7に記載する絶縁ゲート型半導体装置において,
前記小トレンチ部の端部の上面視長手方向の位置が隣り合うトレンチ部同士で揃えられていることを特徴とする絶縁ゲート型半導体装置。 - 請求項8に記載する絶縁ゲート型半導体装置において,
前記トレンチ部の上面視長手方向に直交する方向に延在するとともに,隣り合う小トレンチ部の端部間に位置する第2トレンチ部と,
前記ドリフト領域に囲まれるとともに前記第2トレンチ部の底部を包囲し,第1導電型半導体である中間埋め込み拡散領域とを有することを特徴とする絶縁ゲート型半導体装置。 - 請求項7に記載する絶縁ゲート型半導体装置において,
前記小トレンチ部の端部の上面視長手方向の位置が隣り合うトレンチ部で異なることを特徴とする絶縁ゲート型半導体装置。 - 請求項1から請求項10のいずれか1つに記載する絶縁ゲート型半導体装置において,
前記埋め込み拡散領域は,前記トレンチ部の上面視長手方向に直交する断面から見て,縦長の形状であることを特徴とする絶縁ゲート型半導体装置。 - 請求項1から請求項11のいずれか1つに記載する絶縁ゲート型半導体装置において,
前記埋め込み拡散領域は,電界のピークを,前記ボディ領域と前記ドリフト領域のPN接合箇所と,前記埋め込み拡散領域と前記ドリフト領域のPN接合箇所との2箇所に形成することが可能な位置に設けられていることを特徴とする絶縁ゲート型半導体装置。 - 半導体基板内の上面側に位置し第1導電型半導体であるボディ領域と,前記ボディ領域の下方に接し第2導電型半導体であるドリフト領域とを有する絶縁ゲート型半導体装置の製造方法において,
セル領域内に位置するトレンチ部を形成するためのマスクパターンを形成し,そのマスクパターンを基にエッチングにより前記ボディ領域を貫通するトレンチ部を形成するトレンチ部形成工程と,
前記トレンチ部の底部に向けて不純物を注入し,第1導電型である埋め込み拡散領域を形成するとともに,前記トレンチ部の上面視長手方向に沿って斜め方向から不純物を注入し,前記埋め込み拡散領域および前記ボディ領域と連接し前記埋め込み拡散領域よりも低濃度であり第1導電型半導体である低濃度拡散領域を形成する不純物注入工程とを含むことを特徴とする絶縁ゲート型半導体装置の製造方法。
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WO2004032244A1 (ja) * | 2002-10-04 | 2004-04-15 | Shindengen Electric Manufacturing Co., Ltd. | 半導体装置、半導体装置の製造方法 |
JP3964819B2 (ja) * | 2003-04-07 | 2007-08-22 | 株式会社東芝 | 絶縁ゲート型半導体装置 |
JP4538211B2 (ja) | 2003-10-08 | 2010-09-08 | トヨタ自動車株式会社 | 絶縁ゲート型半導体装置およびその製造方法 |
JP4500530B2 (ja) | 2003-11-05 | 2010-07-14 | トヨタ自動車株式会社 | 絶縁ゲート型半導体装置およびその製造方法 |
US7470953B2 (en) * | 2003-10-08 | 2008-12-30 | Toyota Jidosha Kabushiki Kaisha | Insulated gate type semiconductor device and manufacturing method thereof |
JP4721653B2 (ja) * | 2004-05-12 | 2011-07-13 | トヨタ自動車株式会社 | 絶縁ゲート型半導体装置 |
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- 2007-01-26 WO PCT/JP2007/051744 patent/WO2007105384A1/en active Search and Examination
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE112011104322T5 (de) | 2010-12-10 | 2013-10-02 | Mitsubishi Electric Corporation | Halbleitervorrichtung und Verfahren zur Herstellung einer Halbleitervorrichtung |
US9224860B2 (en) | 2010-12-10 | 2015-12-29 | Mitsubishi Electric Corporation | Trench-gate type semiconductor device and manufacturing method therefor |
US9614029B2 (en) | 2010-12-10 | 2017-04-04 | Mitsubishi Electric Corporation | Trench-gate type semiconductor device and manufacturing method therefor |
US9985093B2 (en) | 2010-12-10 | 2018-05-29 | Mitsubishi Electric Corporation | Trench-gate type semiconductor device and manufacturing method therefor |
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Publication number | Publication date |
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EP1994566A1 (en) | 2008-11-26 |
KR101028131B1 (ko) | 2011-04-08 |
CN101401212B (zh) | 2010-09-29 |
US7999312B2 (en) | 2011-08-16 |
US20100224932A1 (en) | 2010-09-09 |
KR20080106336A (ko) | 2008-12-04 |
EP1994566B1 (en) | 2018-01-17 |
WO2007105384A1 (en) | 2007-09-20 |
CN101401212A (zh) | 2009-04-01 |
JP2007242852A (ja) | 2007-09-20 |
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