CN114512531A - 碳化硅器件 - Google Patents

碳化硅器件 Download PDF

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CN114512531A
CN114512531A CN202011280134.5A CN202011280134A CN114512531A CN 114512531 A CN114512531 A CN 114512531A CN 202011280134 A CN202011280134 A CN 202011280134A CN 114512531 A CN114512531 A CN 114512531A
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silicon carbide
layer
source
type
insulating layer
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龚轶
刘磊
刘伟
王睿
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Suzhou Dongwei Semiconductor Co ltd
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Suzhou Dongwei Semiconductor Co ltd
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Priority to CN202011280134.5A priority Critical patent/CN114512531A/zh
Priority to JP2021569955A priority patent/JP7350373B2/ja
Priority to KR1020217042701A priority patent/KR102572266B1/ko
Priority to US17/614,259 priority patent/US20230275134A1/en
Priority to PCT/CN2020/130599 priority patent/WO2022099764A1/zh
Publication of CN114512531A publication Critical patent/CN114512531A/zh
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Abstract

本发明公开了一种碳化硅器件，包括：位于所述碳化硅衬底内且交替间隔设置的栅极沟槽和源极沟槽；位于栅极沟槽的栅极，栅极通过第一绝缘层与第二n型碳化硅层隔离，栅极通过第二绝缘层与p型半导体层和第三n型半导体层隔离；位于源极沟槽内的源极，源极与p型碳化硅层和第三n型碳化硅层连接，源极通过第三绝缘层与源极沟槽的侧壁位置处的第二n型碳化硅层隔离；位于第二n型碳化硅层内且位于源极沟槽底部位置处的p型阱区，p型阱区与源极在源极沟槽的底部位置相连接。本发明可以降低栅极被击穿的风险，并提高碳化硅器件的耐压。

Description

碳化硅器件
技术领域
本发明属于半导体器件技术领域，特别是涉及一种碳化硅器件。
背景技术
碳化硅具有不同于传统硅半导体材料的诸多特点，其能带间隙为硅的2.8倍,绝缘击穿场强为硅的5.3倍,因此在高压功率器件领域，碳化硅器件可以使用相对于硅材料更薄的外延层来到达传统硅器件相同的耐压水平，同时拥有更低的导通电阻。目前，利用碳化硅制备沟槽功率器件的主要问题在于，在器件运行时会有很大的电场施加在栅极沟槽内的栅介质层上，这使得栅极容易被击穿，影响了器件的耐压。
发明内容
有鉴于此，本发明的目的是提供一种碳化硅器件，以降低栅极被击穿的风险，提高器件的耐压。
为达到本发明的上述目的，本发明提供了一种碳化硅器件，包括：
碳化硅衬底，所述碳化硅衬底包括依次层叠的第一n型碳化硅层、第二n型碳化硅层、p型碳化硅层和第三n型碳化硅层；
位于所述碳化硅衬底内且交替间隔设置的栅极沟槽和源极沟槽，所述栅极沟槽的底部和所述源极沟槽的底部均位于所述第二n型碳化硅层内；
位于所述栅极沟槽内的栅极，所述栅极通过第一绝缘层与所述第二n型碳化硅层隔离，所述栅极通过第二绝缘层与所述p型半导体层和所述第三n型半导体层隔离；
位于所述源极沟槽内的源极，所述源极与所述p型碳化硅层和所述第三n型碳化硅层连接，所述源极通过第三绝缘层与所述源极沟槽的侧壁位置处的所述第二n型碳化硅层隔离；
位于所述第二n型碳化硅层内且位于所述源极沟槽的底部位置处的p型阱区，所述p型阱区与所述源极在所述源极沟槽的底部位置相连接。
可选的，所述栅极沟槽的深度与所述源极沟槽的深度相同。
可选的，所述源极沟槽的宽度大于所述栅极沟槽的宽度。
可选的，所述第一绝缘层的厚度大于所述第二绝缘层的厚度。
可选的，所述第一绝缘层为氧化硅、氮化硅、氮氧化硅、氧化铝和氧化铪中的至少一种。
可选的，所述第二绝缘层为氧化硅、氮化硅、氮氧化硅、氧化铝和氧化铪中的至少一种。
可选的，所述第三绝缘层为氧化硅、氮化硅、氮氧化硅、氧化铝和氧化铪中的至少一种。
可选的，所述栅极为导电性多晶硅、钛、镍、铜、铝、银、金、氮化钛和钨中的至少一种。
可选的，所述源极为导电性多晶硅、钛、镍、铜、铝、银、金、氮化钛和钨中的至少一种。
本发明的碳化硅器件，首先，源极沟槽下方的p型阱区可以增加源极沟槽底部附近的电场，把最高电场限定在源极沟槽底部的pn结处，保护栅极沟槽内的栅极不容易被击穿，并提高器件的耐压；其次，栅极沟槽的下部内采用更大厚度的第一绝缘层，可以进一步保护栅极不容易被击穿。
附图说明
为了更加清楚地说明本发明示例性实施例的技术方案，下面对描述实施例中所需要用到的附图做一简单介绍。
图1是本发明提供的碳化硅器件的一个实施例的剖面结构示意图。
具体实施方式
以下将结合本发明实施例中的附图，完整地描述本发明的技术方案。应当理解，本发明所使用的诸如“具有”、“包含”以及“包括”等术语并不配出一个或多个其它元件或其组合的存在。同时，为清楚地说明本发明的具体实施方式，说明书附图中所列示意图，放大了本发明所述的层和区域的厚度，且所列图形大小并不代表实际尺寸。
图1是本发明提供的碳化硅器件的一个实施例的剖面结构示意图，如图1所示，本发明的碳化硅器件包括碳化硅衬底20，碳化硅衬底20包括依次层叠的第一n型碳化硅层21、第二n型碳化硅层22、p型碳化硅层23和第三n型碳化硅层24，第一n型碳化硅层21作为碳化硅器件的n型漏区。
位于碳化硅衬底20内且交替间隔设置的栅极沟槽41和源极沟槽42，栅极沟槽41的底部和源极沟槽42的底部均位于第二n型碳化硅层22内。栅极沟槽41和源极沟槽42的数量由所设计的碳化硅器件的规格确定，本发明实施例中仅示例性的示出了一个栅极沟槽41和两个源极沟槽42。栅极沟槽41的深度与源极沟槽42的深度可以相同，由此，栅极沟槽41和源极沟槽42可以在同一步刻蚀工艺中同时形成。
位于栅极沟槽41和源极沟槽42之间的p型碳化硅层23可以作为碳化硅器件的p型体区，位于栅极沟槽41和源极沟槽42之间的第三n型碳化硅层24可以作为碳化硅器件的n型源区。
位于栅极沟槽41内的栅极27，栅极27通过第一绝缘层26与第二n型碳化硅层22隔离，第一绝缘层26的材料可以为氧化硅、氮化硅、氮氧化硅、氧化铝和氧化铪中的至少一种，栅极27的材料可以为导电性多晶硅、钛、镍、铜、铝、银、金、氮化钛和钨中的至少一种；栅极27通过第二绝缘层28与p型碳化硅层23、第三n型碳化硅层24隔离，第二绝缘层28的材料可以为氧化硅、氮化硅、氮氧化硅、氧化铝和氧化铪中的至少一种，也可以为其它高介电常数的绝缘介质。第一绝缘层26的厚度可以与第二绝缘层28的厚度相同，并且第一绝缘层26的材料与第二绝缘层28的材料相同，由此第一绝缘层26可以与第二绝缘层28在同一制造工艺步骤中形成；第一绝缘层26的厚度也可以大于第二绝缘层28的厚度，这可以保护栅极沟槽41内的栅极27不容易被击穿。
位于源极沟槽42内的源极29，源极29与p型碳化硅层23和第三n型碳化硅层24连接，源极29通过第三绝缘层30与源极沟槽42的侧壁位置处的第二n型碳化硅层22隔离。第三绝缘层30的材料可以为氧化硅、氮化硅、氮氧化硅、氧化铝和氧化铪中的至少一种，源极29的材料可以为导电性多晶硅、钛、镍、铜、铝、银、金、氮化钛和钨中的至少一种。第三绝缘层30的材料可以与第一绝缘层26的材料相同，如此，第三绝缘层30和第一绝缘层26可在同一制造工艺步骤中形成，进而简化碳化硅器件的制备工艺。
源极沟槽42的宽度可以大于栅极沟槽41的宽度，这样可以更加容易的形成栅极沟槽41内的第一绝缘层26，以简化本发明的碳化硅器件的制造工艺。
位于第二n型碳化硅层22内且位于源极沟槽42的底部位置处的p型阱区31，p型阱区31与源极29在源极沟槽42的底部位置相连接。p型阱区31与第二n型碳化硅层22形成pn结结构，增加源极沟槽底部附近的电场，将碳化硅器件的内的最高电场限定在源极沟槽42下方的pn结处，保护栅极沟槽41内的栅极27不容易被击穿，并提高器件的耐压。
以上具体实施方式及实施例是对本发明技术思想的具体支持，不能以此限定本发明的保护范围，凡是按照本发明提出的技术思想，在本技术方案基础上所做的任何等同变化或等效的改动，均仍属于本发明技术方案保护的范围。

Claims (9)

1.碳化硅器件，其特征在于，包括：
碳化硅衬底，所述碳化硅衬底包括依次层叠的第一n型碳化硅层、第二n型碳化硅层、p型碳化硅层和第三n型碳化硅层；
位于所述碳化硅衬底内且交替间隔设置的栅极沟槽和源极沟槽，所述栅极沟槽的底部和所述源极沟槽的底部均位于所述第二n型碳化硅层内；
位于所述栅极沟槽内的栅极，所述栅极通过第一绝缘层与所述第二n型碳化硅层隔离，所述栅极通过第二绝缘层与所述p型半导体层和所述第三n型半导体层隔离；
位于所述源极沟槽内的源极，所述源极与所述p型碳化硅层和所述第三n型碳化硅层连接，所述源极通过第三绝缘层与所述源极沟槽的侧壁位置处的所述第二n型碳化硅层隔离；
位于所述第二n型碳化硅层内且位于所述源极沟槽的底部位置处的p型阱区，所述p型阱区与所述源极在所述源极沟槽的底部位置相连接。
2.如权利要求1所述的碳化硅器件，其特征在于，所述栅极沟槽的深度与所述源极沟槽的深度相同。
3.如权利要求1所述的碳化硅器件，其特征在于，所述源极沟槽的宽度大于所述栅极沟槽的宽度。
4.如权利要求1所述的碳化硅器件，其特征在于，所述第一绝缘层的厚度大于所述第二绝缘层的厚度。
5.如权利要求1所述的碳化硅器件，其特征在于，所述第一绝缘层的材料为氧化硅、氮化硅、氮氧化硅、氧化铝和氧化铪中的至少一种。
6.如权利要求1所述的碳化硅器件，其特征在于，所述第三绝缘层的材料为氧化硅、氮化硅、氮氧化硅、氧化铝和氧化铪中的至少一种。
7.如权利要求1所述的碳化硅器件，其特征在于，所述第二绝缘层的材料为氧化硅、氮化硅、氮氧化硅、氧化铝和氧化铪中的至少一种。
8.如权利要求1所述的碳化硅器件，其特征在于，所述栅极的材料为导电性多晶硅、钛、镍、铜、铝、银、金、氮化钛和钨中的至少一种。
9.如权利要求1所述的碳化硅器件，其特征在于，所述源极的材料为导电性多晶硅、钛、镍、铜、铝、银、金、氮化钛和钨中的至少一种。
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