JP6641523B2 - 半導体装置および電力変換装置 - Google Patents
半導体装置および電力変換装置 Download PDFInfo
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- JP6641523B2 JP6641523B2 JP2019504171A JP2019504171A JP6641523B2 JP 6641523 B2 JP6641523 B2 JP 6641523B2 JP 2019504171 A JP2019504171 A JP 2019504171A JP 2019504171 A JP2019504171 A JP 2019504171A JP 6641523 B2 JP6641523 B2 JP 6641523B2
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- 239000004065 semiconductor Substances 0.000 title claims description 256
- 238000009792 diffusion process Methods 0.000 claims description 143
- 230000002093 peripheral effect Effects 0.000 claims description 79
- 239000000758 substrate Substances 0.000 claims description 31
- 238000006243 chemical reaction Methods 0.000 claims description 28
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 381
- 239000012535 impurity Substances 0.000 description 34
- 230000005684 electric field Effects 0.000 description 31
- 238000006073 displacement reaction Methods 0.000 description 25
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 24
- 229910010271 silicon carbide Inorganic materials 0.000 description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 229910052814 silicon oxide Inorganic materials 0.000 description 16
- 238000010586 diagram Methods 0.000 description 15
- 239000011229 interlayer Substances 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- 239000011241 protective layer Substances 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 230000015556 catabolic process Effects 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 8
- 238000000151 deposition Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 230000006378 damage Effects 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
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- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
- H02M7/53871—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current
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Description
まず、本発明の実施の形態1における半導体装置の構成を説明する。図1は、本発明の実施の形態1における半導体装置を示す平面図である。図1において、半導体装置100は、平面視で半導体装置100の中央部に設けられた活性領域20と、活性領域20の周囲に設けられた終端領域30とからなる。
図7は、本発明の実施の形態2における半導体装置を示す部分平面図および部分断面図である。図7は、実施の形態1の図2に相当する図であり、図7において、図2と同じ符号を付けたものは、同一または対応する構成を示しており、その説明を省略する。本発明の実施の形態1とは、終端領域に設けられた終端保護層19が、炭化珪素半導体基板1の外周側から内周側に延伸した延伸部19aを有する構成が相違している。
図8は、本発明の実施の形態3における半導体装置を示す部分平面図および部分断面図である。図8は、実施の形態1の図2に相当する図であり、図8において、図2と同じ符号を付けたものは、同一または対応する構成を示しており、その説明を省略する。本発明の実施の形態1とは、ゲートパッド33よりも炭化珪素半導体基板1の外周側にソース電極11が設けられた構成が相違している。
図9は、本発明の実施の形態4における半導体装置を示す部分平面図および部分断面図である。図9は、実施の形態1の図2に相当する図であり、図9において、図2と同じ符号を付けたものは、同一または対応する構成を示しており、その説明を省略する。本発明の実施の形態1とは、終端領域の終端保護層19とゲート配線18との間にフィールド絶縁膜17が設けられ、フィールド絶縁膜17が、終端領域から活性領域のソース領域5上まで連続して設けられた構成が相違している。
本実施の形態5は、電力変換装置に用いられるスイッチング素子に上述した実施の形態1〜4に示した半導体装置を適用したものである。また、本発明は特定の電力変換装置に限定されるものではないが、以下、実施の形態5として、三相のインバータに本発明を適用した場合について説明する。
2 半導体層
3 ドリフト層
4 ベース領域
5 ソース領域
6 ゲートトレンチ、6a 延伸部
7 ゲート絶縁膜
8 ゲート電極
9 拡散保護層、9a 延伸部
10a 活性セル、10b 最外周セル、10c コンタクトセル
11 ソース電極、11a 接合部
13 層間絶縁膜
16 終端トレンチ、16a 延伸部
17 フィールド絶縁膜
18 ゲート配線、18a 接合部
19 終端保護層、19a 延伸部
20 活性領域、30 終端領域
60 電力変換装置、61 主変換回路、62 駆動換回路、63 制御回路
100、110、200、300、400 半導体装置
Claims (11)
- 半導体基板と、
前記半導体基板上に設けられた第1導電型のドリフト層と、
前記ドリフト層上に設けられた第2導電型のベース領域と、
前記ベース領域内の上部に設けられた第1導電型のソース領域と、
前記ソース領域および前記ベース領域を貫通し前記ドリフト層まで達するゲートトレンチ内に設けられたゲート電極と、
前記ゲートトレンチの底面と前記ゲート電極との間に設けられたゲート絶縁膜と、
前記ゲート絶縁膜の下方に設けられた第2導電型の拡散保護層と、
前記ゲートトレンチよりも前記半導体基板の外周側に位置する終端トレンチの底面に設けられた絶縁膜と、
前記絶縁膜上に設けられ、前記ゲート電極に電気的に接続されたゲート配線と、
前記終端トレンチ内で前記ゲート配線に接合されたゲートパッドと、
前記絶縁膜の下方に設けられた第2導電型の終端保護層と、
前記ソース領域、前記拡散保護層、および前記終端保護層に電気的に接続されたソース電極と、
を備え、
前記拡散保護層は、前記終端保護層に向かって延伸した第1の延伸部を有し、前記第1の延伸部が前記終端保護層と離隔した半導体装置。 - 前記拡散保護層は、平面視で格子状またはストライプ状の形状を呈する請求項1に記載の半導体装置。
- 前記第1の延伸部の上方に位置する前記ゲートトレンチの延伸部が、前記終端トレンチと離隔している請求項1または2に記載の半導体装置。
- 前記第1の延伸部の外周側端部は、平面視で前記第1の延伸部に隣接した前記ソース領域よりも前記半導体基板の外周側に位置する請求項1から3のいずれか1項に記載の半導体装置。
- 前記拡散保護層は、前記第1の延伸部を複数有し、
前記終端保護層は、複数の前記第1の延伸部間に向かって延伸した第2の延伸部を有する請求項1から4のいずれか1項に記載の半導体装置。 - 前記終端保護層は、前記ソース電極に接合され、前記ソース電極を介してのみ前記拡散保護層に電気的に接続された請求項1から5のいずれか1項に記載の半導体装置。
- 前記ソース電極が前記拡散保護層に接合された第1の接合部と、前記ソース電極が前記終端保護層に接合された第2の接合部とを有し、
前記第1の接合部は複数であって、平面視で複数の前記第1の接合部のうち前記第2の接合部に最も近い最近接第1の接合部と前記第2の接合部との間の距離は、前記最近接第1の接合部と前記最近接第1の接合部に最も近い他の第1の接合部との間の距離より長い請求項1から6のいずれか1項に記載の半導体装置。 - 前記絶縁膜は、前記ゲート絶縁膜より膜厚が厚いフィールド絶縁膜であって、前記終端トレンチの底面から前記ソース領域上まで連続して設けられた請求項1から7のいずれか1項に記載の半導体装置。
- 前記終端トレンチの底面と前記半導体基板との間の長さは、前記ゲートトレンチの底面と前記半導体基板との間の長さ以下である請求項1から8のいずれか1項に記載の半導体装置。
- 前記ドリフト層は、シリコンよりバンドギャップが大きいワイドバンドギャップ半導体からなる請求項1から9のいずれか1項に記載の半導体装置。
- 請求項1から10のいずれか1項に記載の半導体装置を有し、入力される電力を変換して出力する主変換回路と、
前記半導体装置を駆動する駆動信号を前記半導体装置に出力する駆動回路と、
前記駆動回路を制御する制御信号を前記駆動回路に出力する制御回路と、
を備えた電力変換装置。
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