JP5154627B2 - 表示装置 - Google Patents
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- Publication number
- JP5154627B2 JP5154627B2 JP2010232988A JP2010232988A JP5154627B2 JP 5154627 B2 JP5154627 B2 JP 5154627B2 JP 2010232988 A JP2010232988 A JP 2010232988A JP 2010232988 A JP2010232988 A JP 2010232988A JP 5154627 B2 JP5154627 B2 JP 5154627B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- oxide semiconductor
- film
- insulating layer
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 239000004065 semiconductor Substances 0.000 claims description 428
- 230000015572 biosynthetic process Effects 0.000 claims description 81
- 239000011368 organic material Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 1139
- 239000010408 film Substances 0.000 description 504
- 239000010409 thin film Substances 0.000 description 237
- 238000010438 heat treatment Methods 0.000 description 191
- 239000000758 substrate Substances 0.000 description 187
- 238000000034 method Methods 0.000 description 142
- 238000004544 sputter deposition Methods 0.000 description 131
- 230000002829 reductive effect Effects 0.000 description 127
- 239000007789 gas Substances 0.000 description 124
- 239000000463 material Substances 0.000 description 113
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 102
- 239000001257 hydrogen Substances 0.000 description 96
- 229910052739 hydrogen Inorganic materials 0.000 description 96
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 81
- 239000010936 titanium Substances 0.000 description 76
- 229910052760 oxygen Inorganic materials 0.000 description 72
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 66
- 239000001301 oxygen Substances 0.000 description 66
- 239000012535 impurity Substances 0.000 description 63
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- 230000006870 function Effects 0.000 description 62
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- 229910052581 Si3N4 Inorganic materials 0.000 description 56
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 56
- 229910052710 silicon Inorganic materials 0.000 description 56
- 239000010703 silicon Substances 0.000 description 56
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 56
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- 150000004678 hydrides Chemical class 0.000 description 20
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- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 10
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 10
- 229910001882 dioxygen Inorganic materials 0.000 description 10
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 10
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- 238000001039 wet etching Methods 0.000 description 9
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- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 6
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- 229910021529 ammonia Inorganic materials 0.000 description 6
- 235000011114 ammonium hydroxide Nutrition 0.000 description 6
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- 229910052754 neon Inorganic materials 0.000 description 6
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- 230000002441 reversible effect Effects 0.000 description 6
- 229910052725 zinc Inorganic materials 0.000 description 6
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 5
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- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 4
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- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 4
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- 229910052776 Thorium Inorganic materials 0.000 description 4
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- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 4
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- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 4
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- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 3
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- OMOVVBIIQSXZSZ-UHFFFAOYSA-N [6-(4-acetyloxy-5,9a-dimethyl-2,7-dioxo-4,5a,6,9-tetrahydro-3h-pyrano[3,4-b]oxepin-5-yl)-5-formyloxy-3-(furan-3-yl)-3a-methyl-7-methylidene-1a,2,3,4,5,6-hexahydroindeno[1,7a-b]oxiren-4-yl] 2-hydroxy-3-methylpentanoate Chemical compound CC12C(OC(=O)C(O)C(C)CC)C(OC=O)C(C3(C)C(CC(=O)OC4(C)COC(=O)CC43)OC(C)=O)C(=C)C32OC3CC1C=1C=COC=1 OMOVVBIIQSXZSZ-UHFFFAOYSA-N 0.000 description 3
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- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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Description
本実施の形態では、高純度化された酸化物半導体を用いた薄膜トランジスタと画素電極で構成する画素の例を、図1及び図4を用いて以下に説明する。
本実施の形態は、本明細書で開示する表示装置に適用できる薄膜トランジスタの例を示す。本実施の形態で示す薄膜トランジスタ410は、実施の形態1の薄膜トランジスタ106として用いることができる。
本実施の形態は、本明細書で開示する表示装置に適用できる薄膜トランジスタの例を示す。なお、実施の形態2と同一部分又は同様な機能を有する部分、及び工程は、実施の形態2と同様とすればよく、その繰り返しの説明は省略する。また同じ箇所の詳細な説明も省略する。本実施の形態で示す薄膜トランジスタ460は、実施の形態1の薄膜トランジスタ106として用いることができる。
本実施の形態は、本明細書で開示する表示装置に適用できる薄膜トランジスタの他の例を示す。なお、実施の形態2と同一部分又は同様な機能を有する部分、及び工程は、実施の形態2と同様とすればよく、その繰り返しの説明は省略する。また同じ箇所の詳細な説明も省略する。本実施の形態で示す薄膜トランジスタ425、426は、実施の形態1の薄膜トランジスタ106として用いることができる。
本実施の形態は、本明細書で開示する表示装置に適用できる薄膜トランジスタの他の例を示す。本実施の形態で示す薄膜トランジスタ390は、実施の形態1の薄膜トランジスタ106として用いることができる。
本実施の形態は、本明細書で開示する表示装置に適用できる薄膜トランジスタの他の例を示す。本実施の形態で示す薄膜トランジスタ310は、実施の形態1の薄膜トランジスタ106として用いることができる。
本実施の形態は、本明細書で開示する表示装置に適用できる薄膜トランジスタの他の例を示す。本実施の形態で示す薄膜トランジスタ360は、実施の形態1の薄膜トランジスタ106として用いることができる。
本実施の形態は、本明細書で開示する表示装置に適用できる薄膜トランジスタの他の例を示す。本実施の形態で示す薄膜トランジスタ350は、実施の形態1の薄膜トランジスタ106として用いることができる。
本実施の形態は、本明細書で開示する表示装置に適用できる薄膜トランジスタの他の例を示す。本実施の形態で示す薄膜トランジスタ380は、実施の形態1の薄膜トランジスタ106として用いることができる。
本実施の形態は、本明細書で開示する表示装置に適用できる薄膜トランジスタの他の例を示す。本実施の形態で示す薄膜トランジスタは、実施の形態2乃至8の薄膜トランジスタに適用することができる。
本実施の形態は、本明細書で開示する表示装置に適用できる発光素子の例を図15、乃至図17を用いて以下に説明する。
本実施の形態では、画素部に蓄光層を設けた表示装置の一態様について、図18を用いて説明する。
本実施の形態においては、上記実施の形態で説明した表示装置を具備する電子機器の例について説明する。
本実施の形態では、表示装置のブロック図、及び駆動回路における動作の停止手順及び開始手順について示す。まず図25では、表示装置のブロック図について説明を行う。
信号生成回路1002は、具体的には、制御信号として、ゲート線駆動回路1009A、及び信号線駆動回路1009Bに電源電圧である高電源電位Vdd、低電源電位Vssを供給する。また、ゲート線駆動回路1009Aに、ゲート線駆動回路用のスタートパルスSP、クロック信号CKを生成して出力し、信号線駆動回路1009Bに、信号線駆動回路用のスタートパルスSP、クロック信号CKを生成して出力する。また信号生成回路1002は、動画像または静止画を表示するための画像信号データを記憶回路1003に出力する。
12 配線
13 配線
14 配線
15 配線
17 配線
18 配線
51 電源線
52 電源線
61 期間
62 期間
100 画素
101 配線
102 配線
102A 配線
102B 配線
103 酸化物半導体層
104 容量線
105 画素電極
106 薄膜トランジスタ
108 基板温度
111 基板
112 下地膜
113 ゲート絶縁膜
114 酸化物絶縁層
121 絶縁層
200 基板
201 画素
202 画素部
203 走査線駆動回路
204 信号線駆動回路
251 期間
252 期間
261 期間
300 基板
302 ゲート絶縁層
303 保護絶縁層
310 薄膜トランジスタ
311 ゲート電極層
313 チャネル形成領域
314a 高抵抗ソース領域
314b 高抵抗ドレイン領域
315a ソース電極層
315b ドレイン電極層
316 酸化物絶縁層
320 基板
322 ゲート絶縁層
323 保護絶縁層
330 酸化物半導体膜
331 酸化物半導体層
332 酸化物半導体層
340 基板
342 ゲート絶縁層
343 保護絶縁層
345 酸化物半導体膜
346 酸化物半導体層
350 薄膜トランジスタ
351 ゲート電極層
352 酸化物半導体層
355a ソース電極層
355b ドレイン電極層
356 酸化物絶縁層
360 薄膜トランジスタ
361 ゲート電極層
362 酸化物半導体層
363 チャネル形成領域
364a 高抵抗ソース領域
364b 高抵抗ドレイン領域
365a ソース電極層
365b ドレイン電極層
366 酸化物絶縁層
370 基板
372a ゲート絶縁層
372b ゲート絶縁層
373 保護絶縁層
380 薄膜トランジスタ
381 ゲート電極層
382 酸化物半導体層
385a ソース電極層
385b ドレイン電極層
386 酸化物絶縁層
390 薄膜トランジスタ
391 ゲート電極層
392 酸化物半導体層
393 酸化物半導体膜
394 基板
395a ソース電極層
395b ドレイン電極層
396 酸化物絶縁層
397 ゲート絶縁層
398 保護絶縁層
399 酸化物半導体層
400 基板
402 ゲート絶縁層
407 絶縁層
410 薄膜トランジスタ
411 ゲート電極層
412 酸化物半導体層
414a 配線層
414b 配線層
415a ドレイン電極層
415b ドレイン電極層
420 シリコン基板
422 絶縁層
423 開口
424 導電層
425 薄膜トランジスタ
427 導電層
438 配線層
450 基板
452 ゲート絶縁層
457 絶縁層
460 薄膜トランジスタ
461 ゲート電極層
462 酸化物半導体層
464 配線層
465a ドレイン電極層
465a1 ドレイン電極層
465a2 ドレイン電極層
465b ドレイン電極層
468 配線層
472a ゲート絶縁層
1008 画素部
1009B 信号線駆動回路
4501 基板
4502 画素部
4503a 信号線駆動回路
4504a 走査線駆動回路
4505 シール材
4506 基板
4507 充填材
4509 薄膜トランジスタ
4510 薄膜トランジスタ
4511 発光素子
4512 電界発光層
4513 電極層
4515 接続端子電極
4516 端子電極
4517 電極層
4518a FPC
4519 異方性導電膜
4520 隔壁
4540 導電層
4542 絶縁層
6400 画素
6401 スイッチング用トランジスタ
6402 駆動用トランジスタ
6404 発光素子
6405 信号線
6406 走査線
6407 電源線
6408 共通電極
7001 駆動用TFT
7002 発光素子
7003 電極
7004 EL層
7005 電極
7011 駆動用TFT
7012 発光素子
7013 電極
7014 EL層
7015 電極
7016 遮蔽膜
7017 導電膜
7019 隔壁
7021 駆動用TFT
7022 発光素子
7023 電極
7024 EL層
7025 電極
7026 電極
7027 導電膜
7029 隔壁
7030 ドレイン電極層
7031 絶縁層
7033 カラーフィルタ
7034 オーバーコート層
7035 絶縁層
7040 ドレイン電極層
7041 絶縁層
7043 カラーフィルタ
7044 オーバーコート層
7045 絶縁層
7051 絶縁層
7053 絶縁層
7055 絶縁層
7211 駆動用TFT
7212 発光素子
7217 導電膜
7230 ドレイン電極
7231 絶縁層
7233 蓄光層
7234 オーバーコート層
7235 絶縁層
9630 筐体
9631 表示部
9633 スピーカ
9635 操作キー
9636 接続端子
9638 マイクロフォン
9672 記録媒体読込部
9676 シャッターボタン
9677 受像部
9680 外部接続ポート
9681 ポインティングデバイス
Claims (6)
- 電源線から電力が供給される発光素子と、
前記電源線と前記発光素子との導通状態と非導通状態を制御する駆動用トランジスタと、
第1の配線と前記駆動用トランジスタとの導通状態と非導通状態を制御するスイッチング用トランジスタとを有し、
前記発光素子、前記駆動用トランジスタ、及び前記スイッチング用トランジスタは、画素に設けられ、
前記画素に蓄光層を有し、
前記スイッチング用トランジスタのチャネル形成領域は、バンドギャップが2eV以上である酸化物半導体を有し、
前記スイッチング用トランジスタは、チャネル幅1μmあたりのオフ電流が1×10−16A/μm以下である表示装置。 - 第1の配線と、
第2の配線と、
電源線と、
駆動用トランジスタ、スイッチング用トランジスタ、及び発光素子を有する画素とをし、
前記画素に蓄光層を有し、
前記スイッチング用トランジスタのゲートは、前記第2の配線に電気的に接続し、
前記スイッチング用トランジスタの第1の電極は、前記第1の配線と電気的に接続し、
前記スイッチング用トランジスタの第2の電極は、前記駆動用トランジスタのゲートと電気的に接続し、
前記駆動用トランジスタの第1の電極は、前記電源線に電気的に接続し、
前記駆動用トランジスタの第2の電極は、前記発光素子の第1の電極に電気的に接続し、
前記スイッチング用トランジスタのチャネル形成領域は、バンドギャップが2eV以上である酸化物半導体を有し、
前記スイッチング用トランジスタは、チャネル幅1μmあたりのオフ電流が1×10−16A/μm以下である表示装置。 - 請求項1又は請求項2において、
前記電源線にはパルス状の直流電源が供給されることを特徴とする表示装置。 - 請求項1乃至請求項3のいずれか一項において、
前記酸化物半導体のキャリア濃度が1×1014/cm3未満である表示装置。 - 請求項1乃至請求項4のいずれか一項において、
前記スイッチング用トランジスタがオフであって、静止画像の表示期間中に、前記第1の配線へ供給される信号が停止する期間を有する表示装置。 - 請求項1乃至請求項5のいずれか一項において、
前記発光素子は、一対の電極と、前記一対の電極間に設けられた発光性の有機物質を含む層とを有する表示装置。
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JP2013092783A (ja) * | 2009-10-21 | 2013-05-16 | Semiconductor Energy Lab Co Ltd | 表示装置 |
US8890781B2 (en) | 2009-10-21 | 2014-11-18 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device including display device |
US9165502B2 (en) | 2009-10-21 | 2015-10-20 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device including display device |
US10083651B2 (en) | 2009-10-21 | 2018-09-25 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device including display device |
US10657882B2 (en) | 2009-10-21 | 2020-05-19 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device including display device |
US11107396B2 (en) | 2009-10-21 | 2021-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device including thin film transistor including top-gate |
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