KR910003661A - 불휘발성 반도체장치 - Google Patents

불휘발성 반도체장치 Download PDF

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Publication number
KR910003661A
KR910003661A KR1019900011036A KR900011036A KR910003661A KR 910003661 A KR910003661 A KR 910003661A KR 1019900011036 A KR1019900011036 A KR 1019900011036A KR 900011036 A KR900011036 A KR 900011036A KR 910003661 A KR910003661 A KR 910003661A
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KR
South Korea
Prior art keywords
insulating film
semiconductor device
gate electrode
gate
drain
Prior art date
Application number
KR1019900011036A
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English (en)
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KR930009139B1 (ko
Inventor
구니요시 요시카와
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
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Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR910003661A publication Critical patent/KR910003661A/ko
Application granted granted Critical
Publication of KR930009139B1 publication Critical patent/KR930009139B1/ko

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7885—Hot carrier injection from the channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/05—Etch and refill

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Element Separation (AREA)

Abstract

내용 없음.

Description

불휘발성 반도체장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 1실시예의 단면도.

Claims (4)

  1. 제1도전형 반도체기판(101)상에 설치된 제2도전형 소오스 (104) 및 드레인(102)영역과, 상기 소오스(104) 및 드레인(102) 영역간의 채널영역상에 형성된 제1게이트절연막(107)을 매개로 전기적으로 부유상태로 된 제1게이트전극(108), 상기 제1게이트전극(108)상에 형성된 제2게이트졀연막(109)을 매개로 제어게이트로 되는 제2게이트전극(110)을 구비한 반조체소자를 복수개 갖춘 반도체장치에 있어서, 상기 소오스(104) 및 드레인(102)영역은 상기 채널영역을, 인접하는 소자의 채널영역과 분리하기 위한 제1절연막보다 두꺼운 제3절연막(106)의하부에설치하고 있고, 상기 인접하는 소자의 소오스(104) 및 드레인(102) 영역은 상기 제3절연막(106)으로 부터 반도체기판(101)내에 달하도록 설치된 홈(103)에 의해 분리되어 있는 것을 특징으로 하는 불휘발성 반도체장치.
  2. 제1항에 있어서, 상기 홈(103)은 서로 이접하는 소자의 제1게이트전극(108)단과 자기정합해서 설치된 것을 특징으로 하는 불휘발성 반도체장치.
  3. 제1항 또는 제2항에 있어서, 상기 제3절연막(106)은 필드절연막인 것을 특징으로 하는 불휘 발성 반도체장치.
  4. 제1항 또는 제2항에 있어서, 상기 제어게이트(110)는 상기 제1게이트전극(1080상에 형성된 제2절연막(109)과 상기 제3절연막(106)과 상기 홈(103)의 상방을 통해 인접하는 소자군을 결전하는 것을 특징으로 하는 불휘발성 반도체장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900011036A 1989-07-25 1990-07-20 불휘발성 반도체장치 KR930009139B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1191839A JPH088313B2 (ja) 1989-07-25 1989-07-25 不揮発性半導体記憶装置及びその製造方法
JP01-191839 1989-07-25

Publications (2)

Publication Number Publication Date
KR910003661A true KR910003661A (ko) 1991-02-28
KR930009139B1 KR930009139B1 (ko) 1993-09-23

Family

ID=16281374

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900011036A KR930009139B1 (ko) 1989-07-25 1990-07-20 불휘발성 반도체장치

Country Status (5)

Country Link
US (2) US5015601A (ko)
EP (1) EP0410424B1 (ko)
JP (1) JPH088313B2 (ko)
KR (1) KR930009139B1 (ko)
DE (1) DE69013094T2 (ko)

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KR100450828B1 (ko) * 1994-03-31 2004-12-04 가부시끼가이샤 히다치 세이사꾸쇼 불휘발성반도체기억장치의제조방법

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US5051795A (en) * 1989-11-21 1991-09-24 Texas Instruments Incorporated EEPROM with trench-isolated bitlines
IT1236980B (it) * 1989-12-22 1993-05-12 Sgs Thomson Microelectronics Cella di memoria eprom non volatile a gate divisa e processo ad isolamento di campo autoallineato per l'ottenimento della cella suddetta
KR970000533B1 (ko) * 1990-12-20 1997-01-13 후지쓰 가부시끼가이샤 Eprom 및 그 제조방법
JPH05326978A (ja) * 1992-05-21 1993-12-10 Rohm Co Ltd 半導体記憶装置およびその製造方法
TW299475B (ko) * 1993-03-30 1997-03-01 Siemens Ag
WO1994028551A1 (en) * 1993-05-28 1994-12-08 Macronix International Co., Ltd. Flash eprom with block erase flags for over-erase protection
US6201277B1 (en) * 1993-08-31 2001-03-13 Texas Instruments Incorporated Slot trench isolation for flash EPROM
DE4333979A1 (de) * 1993-10-05 1995-04-13 Gold Star Electronics Nichtflüchtiger Halbleiterspeicher und Verfahren zu dessen Herstellung
KR100456256B1 (ko) * 1996-04-03 2005-06-17 소니 가부시끼 가이샤 반도체장치및그제조방법
JPH09275196A (ja) * 1996-04-03 1997-10-21 Sony Corp 半導体装置及びその製造方法
US5849621A (en) 1996-06-19 1998-12-15 Advanced Micro Devices, Inc. Method and structure for isolating semiconductor devices after transistor formation
US5808353A (en) * 1996-06-20 1998-09-15 Harris Corporation Radiation hardened dielectric for EEPROM
KR100247862B1 (ko) * 1997-12-11 2000-03-15 윤종용 반도체 장치 및 그 제조방법
US6066530A (en) * 1998-04-09 2000-05-23 Advanced Micro Devices, Inc. Oxygen implant self-aligned, floating gate and isolation structure
US6323516B1 (en) * 1999-09-03 2001-11-27 Advanced Micro Devices, Inc. Flash memory device and fabrication method having a high coupling ratio
US6242305B1 (en) * 1999-10-25 2001-06-05 Advanced Micro Devices, Inc. Process for fabricating a bit-line using buried diffusion isolation
JP2001168306A (ja) * 1999-12-09 2001-06-22 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
JP2001230390A (ja) * 2000-02-17 2001-08-24 Mitsubishi Electric Corp 半導体不揮発性記憶装置およびその製造法
KR100452037B1 (ko) * 2002-07-18 2004-10-08 주식회사 하이닉스반도체 반도체 소자의 제조방법 및 그 소자
JP4346322B2 (ja) * 2003-02-07 2009-10-21 株式会社ルネサステクノロジ 半導体装置
JP2006054283A (ja) * 2004-08-11 2006-02-23 Nec Electronics Corp 不揮発性半導体記憶装置，及びその製造方法
WO2019190525A1 (en) * 2018-03-29 2019-10-03 Nitto Belgium Nv Adhesive tape for automatic reel change

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JPS5141515B2 (ko) * 1971-11-29 1976-11-10
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JPS5681974A (en) * 1979-12-07 1981-07-04 Toshiba Corp Manufacture of mos type semiconductor device
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JPS6288369A (ja) * 1985-10-15 1987-04-22 Fujitsu Ltd 半導体装置の製造方法
US4698900A (en) * 1986-03-27 1987-10-13 Texas Instruments Incorporated Method of making a non-volatile memory having dielectric filled trenches
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100450828B1 (ko) * 1994-03-31 2004-12-04 가부시끼가이샤 히다치 세이사꾸쇼 불휘발성반도체기억장치의제조방법

Also Published As

Publication number Publication date
EP0410424A2 (en) 1991-01-30
JPH0355880A (ja) 1991-03-11
US5015601A (en) 1991-05-14
DE69013094T2 (de) 1995-03-23
US5159431A (en) 1992-10-27
EP0410424B1 (en) 1994-10-05
KR930009139B1 (ko) 1993-09-23
EP0410424A3 (en) 1991-04-10
DE69013094D1 (de) 1994-11-10
JPH088313B2 (ja) 1996-01-29

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