KR900019265A - 트랜치 게이트 mos fet - Google Patents

트랜치 게이트 mos fet Download PDF

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KR900019265A
KR900019265A KR1019890007221A KR890007221A KR900019265A KR 900019265 A KR900019265 A KR 900019265A KR 1019890007221 A KR1019890007221 A KR 1019890007221A KR 890007221 A KR890007221 A KR 890007221A KR 900019265 A KR900019265 A KR 900019265A
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trench
dielectric film
mos fet
gate mos
trench gate
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KR1019890007221A
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KR0173111B1 (ko
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세이이찌 이와마쯔
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야마무라 가쯔미
세이코 엡슨 가부시끼가이샤
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Priority claimed from JP63135971A external-priority patent/JPH01304779A/ja
Priority claimed from JP63174128A external-priority patent/JPH0223670A/ja
Priority claimed from JP63174126A external-priority patent/JP2780175B2/ja
Priority claimed from JP17412788A external-priority patent/JPH0223669A/ja
Priority claimed from JP17412588A external-priority patent/JPH0223667A/ja
Application filed by 야마무라 가쯔미, 세이코 엡슨 가부시끼가이샤 filed Critical 야마무라 가쯔미
Publication of KR900019265A publication Critical patent/KR900019265A/ko
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Publication of KR0173111B1 publication Critical patent/KR0173111B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7834—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a non-planar structure, e.g. the gate or the source or the drain being non-planar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
    • H01L29/66621—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation using etching to form a recess at the gate location
    • H—ELECTRICITY
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure

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  • Engineering & Computer Science (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Crystallography & Structural Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

내용 없음

Description

트랜치 게이트 MOS FET
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도 내지 제6a 내지 6c도는 본 발명에 따른 부분적인 평면도를 구비하는 트랜치 게이트 MOS FET의 실시예 요부의 단면도.

Claims (8)

  1. 반도체 기판 표면에 드라이 에칭함으로써 형성된 트랜치, 상기 트랜치의 측벽에 형성된 유전체막과 상기 유전체막 표면에 형성된 전극을 가진 트랜치 게이트 MOS FET에 있어서, 개선점을 고 농도층과 저 농도층을 이루는 2층 구조를 가진 드레인 불순물 화산층 및/ 또는 소오스 불순물 확산층을 구비하는 것을 특징으로 하는 트랜치 게이트 MOS FET.
  2. 반도체 기판 표면에 드라이 에칭함으로써 형성된 트랜치, 상기 트랜치의 측벽에 형성된 유전체막과 상기 유전체막 표면에 형성된 전극을 가진 트랜치 게이트 MOS FET에 있어서, 개선점은 트랜치 게이트의 반도체 표면에 인접한 저 농도층과 상기 저농도층에 인접하고 농도층을 가지도록 구성된 적어도 드레인 불순물 확산층을 구비하는 것을 특징으로 하는 트랜치 게이트 MOS FET.
  3. 반도체 기판 표면에 드라이 에칭함으로써 형성된 트랜치, 상기 트랜치의 측벽에 형성된 유전체막과 상기 유전체막 표면에 형성된 전극을 가진 트랜치 게이트 MOS FET에 있어서, 개선점은 불순물 확산층과 상기 게이트 전극과의 겹쳐진 부분에서 다른 부분보다 두꺼운 두께를 가지도록 구성된 상기 게이트 산화막을 구비하는 것을 특징으로 하는 트랜치 게이트 MOS FET.
  4. 반도체 기판 표면에 드라이 에칭함으로써 형성된 트랜치, 상기 트랜치의 측벽에 형성된 유전체막과 상기 유전체막 표면에 형성된 전극을 가진 트랜치 게이트 MOS FET에 있어서, 상기 트랜치 게이트간의 채널영역의 도전율을 제어하도록 반도체 표면에 제공된 두 개의 트랜치 게이트를 구비한 전계효과 트랜지스터로 이루어진 상기 FET를 구비하는 것을 특징으로 하는 트랜치 게이트 MOS FET.
  5. 반도체 기판 표면에 드라이 에칭함으로써 형성된 트랜치, 상기 트랜치의 측벽에 형성된 유전체막과 상기 유전체막 표면에 형성된 전극을 가진 트랜치 게이트 MOS FET에 있어서, 개선점은 불순물 확산층과 상기 게이트 전극과의 겹쳐진 부분에서 다른 부분보다 두꺼운 두께를 가지도록 구성된 상기 게이트 산화막을 구비하는 것을 특징으로 하는 트랜치 게이트 MOS FET.
  6. 반도체 기판 표면에 드라이 에칭함으로써 형성된 트랜치, 상기 트랜치의 측벽에 형성된 유전체막과 상기 유전체막 표면에 형성된 전극을 가진 트랜치 게이트 MOS FET에 있어서, 상기 트랜치 게이트간의 채널영역의 도전율을 제어하도록 반도체 표면에 제공된 두 개의 트랜치 게이트를 구비한 전계효과 트랜지스터로 이루어진 상기 FET를 구비하는 것을 특징으로 하는 트랜치 게이트 MOS FET.
  7. 반도체 기판 표면에 드라이 에칭함으로써 형성된 트랜치, 상기 트랜치의 측벽에 형성된 유전체막과 상기 유전체막 표면에 형성된 전극을 가진 트랜치 게이트 MOS FET에 있어서, 상기 트랜치 게이트간의 채널영역의 도전율을 제어하도록 반도체 표면에 제공된 두 개의 트랜치 게이트를 구비한 전계효과 트랜지스터로 이루어진 상기 FET를 구비하는 것을 특징으로 하는 트랜치 게이트 MOS FET.
  8. 반도체 기판 표면에 드라이 에칭함으로써 형성된 트랜치, 상기 트랜치의 측벽에 형성된 유전체막과 상기 유전체막 표면에 형성된 전극을 가진 트랜치 게이트 MOS ET에 있어서, 개선점은 트랜치 분리 영역이 제공되어 있고 상기 트랜치 분리 영역과 접촉하는 트랜치 게이트가 제공된 반도체 기판을 구비하는 것을 특징으로 하는 트랜치 게이트 MOS FET.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890007221A 1988-06-02 1989-05-30 트렌치 게이트 mos fet KR0173111B1 (ko)

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
JP135971 1988-06-02
JP63135971A JPH01304779A (ja) 1988-06-02 1988-06-02 Ｍｏｓ型半導体装置の製造方法
JP63174128A JPH0223670A (ja) 1988-07-12 1988-07-12 半導体装置
JP174126 1988-07-12
JP174125 1988-07-12
JP63174126A JP2780175B2 (ja) 1988-07-12 1988-07-12 半導体装置
JP17412788A JPH0223669A (ja) 1988-07-12 1988-07-12 半導体装置
JP17412588A JPH0223667A (ja) 1988-07-12 1988-07-12 半導体装置とその製造方法
JP174127 1988-07-12
JP174128 1988-07-12

Publications (2)

Publication Number Publication Date
KR900019265A true KR900019265A (ko) 1990-12-24
KR0173111B1 KR0173111B1 (ko) 1999-02-01

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KR1019890007221A KR0173111B1 (ko) 1988-06-02 1989-05-30 트렌치 게이트 mos fet

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US (1) US5142640A (ko)
KR (1) KR0173111B1 (ko)

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