IT1236980B - Cella di memoria eprom non volatile a gate divisa e processo ad isolamento di campo autoallineato per l'ottenimento della cella suddetta - Google Patents
Cella di memoria eprom non volatile a gate divisa e processo ad isolamento di campo autoallineato per l'ottenimento della cella suddettaInfo
- Publication number
- IT1236980B IT1236980B IT02284489A IT2284489A IT1236980B IT 1236980 B IT1236980 B IT 1236980B IT 02284489 A IT02284489 A IT 02284489A IT 2284489 A IT2284489 A IT 2284489A IT 1236980 B IT1236980 B IT 1236980B
- Authority
- IT
- Italy
- Prior art keywords
- self
- obtaining
- eprom memory
- memory cell
- cell
- Prior art date
Links
- 238000009413 insulation Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
- H01L29/7885—Hot carrier injection from the channel
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT02284489A IT1236980B (it) | 1989-12-22 | 1989-12-22 | Cella di memoria eprom non volatile a gate divisa e processo ad isolamento di campo autoallineato per l'ottenimento della cella suddetta |
DE69017863T DE69017863T2 (de) | 1989-12-22 | 1990-12-11 | Nichtflüchtige EPROM-Speicherzelle mit geteiltem Gate und selbstausrichtendes Feldisolierungsverfahren zur Herstellung. |
EP90203252A EP0434121B1 (en) | 1989-12-22 | 1990-12-11 | Non-volatile split gate EPROM memory cell and self-aligned field insulation process for obtaining the above cell |
US07/631,008 US5241499A (en) | 1989-12-22 | 1990-12-19 | Non-volatile split gate eprom memory cell and self-aligned field insulation process for obtaining the above cell |
JP2405095A JP2824702B2 (ja) | 1989-12-22 | 1990-12-21 | 不揮発性分割ゲートeprom記憶セル及びこのセルを得るための自己整合フィールド絶縁法 |
US08/077,934 US5330938A (en) | 1989-12-22 | 1993-06-18 | Method of making non-volatile split gate EPROM memory cell and self-aligned field insulation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT02284489A IT1236980B (it) | 1989-12-22 | 1989-12-22 | Cella di memoria eprom non volatile a gate divisa e processo ad isolamento di campo autoallineato per l'ottenimento della cella suddetta |
Publications (3)
Publication Number | Publication Date |
---|---|
IT8922844A0 IT8922844A0 (it) | 1989-12-22 |
IT8922844A1 IT8922844A1 (it) | 1991-06-22 |
IT1236980B true IT1236980B (it) | 1993-05-12 |
Family
ID=11201080
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT02284489A IT1236980B (it) | 1989-12-22 | 1989-12-22 | Cella di memoria eprom non volatile a gate divisa e processo ad isolamento di campo autoallineato per l'ottenimento della cella suddetta |
Country Status (5)
Country | Link |
---|---|
US (2) | US5241499A (it) |
EP (1) | EP0434121B1 (it) |
JP (1) | JP2824702B2 (it) |
DE (1) | DE69017863T2 (it) |
IT (1) | IT1236980B (it) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5477068A (en) * | 1992-03-18 | 1995-12-19 | Rohm Co., Ltd. | Nonvolatile semiconductor memory device |
US5231299A (en) * | 1992-03-24 | 1993-07-27 | International Business Machines Corporation | Structure and fabrication method for EEPROM memory cell with selective channel implants |
US5508955A (en) * | 1993-05-20 | 1996-04-16 | Nexcom Technology, Inc. | Electronically erasable-programmable memory cell having buried bit line |
WO1995022837A1 (en) * | 1994-02-17 | 1995-08-24 | National Semiconductor Corporation | A method for reducing the spacing between the horizontally-adjacent floating gates of a flash eprom array |
US5409854A (en) * | 1994-03-15 | 1995-04-25 | National Semiconductor Corporation | Method for forming a virtual-ground flash EPROM array with floating gates that are self aligned to the field oxide regions of the array |
US5604141A (en) * | 1994-03-15 | 1997-02-18 | National Semiconductor Corporation | Method for forming virtual-ground flash EPROM array with reduced cell pitch in the X direction |
US5429969A (en) * | 1994-05-31 | 1995-07-04 | Motorola, Inc. | Process for forming electrically programmable read-only memory cell with a merged select/control gate |
US5712177A (en) * | 1994-08-01 | 1998-01-27 | Motorola, Inc. | Method for forming a reverse dielectric stack |
US5466624A (en) * | 1994-09-30 | 1995-11-14 | Intel Corporation | Isolation between diffusion lines in a memory array |
US5445984A (en) * | 1994-11-28 | 1995-08-29 | United Microelectronics Corporation | Method of making a split gate flash memory cell |
US5597751A (en) * | 1995-12-20 | 1997-01-28 | Winbond Electronics Corp. | Single-side oxide sealed salicide process for EPROMs |
US5714412A (en) * | 1996-12-02 | 1998-02-03 | Taiwan Semiconductor Manufacturing Company, Ltd | Multi-level, split-gate, flash memory cell and method of manufacture thereof |
DE69637095D1 (de) * | 1996-12-24 | 2007-07-05 | St Microelectronics Srl | Selbstjustiertes Ätzverfahren zur verwirklichung der Wortleitungen integrierter Halbleiterspeicherbauelemente |
US5783473A (en) * | 1997-01-06 | 1998-07-21 | Mosel Vitelic, Inc. | Structure and manufacturing process of a split gate flash memory unit |
DE69731625D1 (de) * | 1997-08-08 | 2004-12-23 | St Microelectronics Srl | Herstellungsprozess von Kreuzpunktspeicherbauelementen mit Zellen, die einen zur Bitleitung und zum Feldoxyd selbstjustierten Source-Kanal aufweisen |
US6093607A (en) * | 1998-01-09 | 2000-07-25 | Taiwan Semiconductor Manufacturing Company | Method of forming sharp beak of poly by oxygen/fluorine implant to improve erase speed for split-gate flash |
US6087695A (en) * | 1999-08-20 | 2000-07-11 | Worldwide Semiconductor Mfg | Source side injection flash EEPROM memory cell with dielectric pillar and operation |
DE10008002C2 (de) * | 2000-02-22 | 2003-04-10 | X Fab Semiconductor Foundries | Split-gate-Flash-Speicherelement, Anordnung von Split-gate-Flash-Speicherelementen und Methode zum Löschen derselben |
US6403494B1 (en) | 2000-08-14 | 2002-06-11 | Taiwan Semiconductor Manufacturing Company | Method of forming a floating gate self-aligned to STI on EEPROM |
US6297099B1 (en) | 2001-01-19 | 2001-10-02 | Taiwan Semiconductor Manufacturing Company | Method to free control tunneling oxide thickness on poly tip of flash |
US7078349B2 (en) * | 2003-07-31 | 2006-07-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method to form self-aligned floating gate to diffusion structures in flash |
KR100525005B1 (ko) * | 2004-05-06 | 2005-10-31 | 삼성전자주식회사 | 스플릿 게이트형 플래쉬 메모리 소자 및 그 제조방법 |
KR100663344B1 (ko) * | 2004-06-17 | 2007-01-02 | 삼성전자주식회사 | 적어도 두 개의 다른 채널농도를 갖는 비휘발성 플래시메모리 소자 및 그 제조방법 |
CN108109966B (zh) * | 2018-01-30 | 2021-09-17 | 德淮半导体有限公司 | 静态随机存取存储器及其制造方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59702B2 (ja) * | 1978-10-18 | 1984-01-07 | トヨタ自動車株式会社 | 燃料噴射式内燃機関の吸気装置 |
US4274012A (en) * | 1979-01-24 | 1981-06-16 | Xicor, Inc. | Substrate coupled floating gate memory cell |
JPS5713772A (en) * | 1980-06-30 | 1982-01-23 | Hitachi Ltd | Semiconductor device and manufacture thereof |
DE3175125D1 (en) * | 1980-11-20 | 1986-09-18 | Toshiba Kk | Semiconductor memory device and method for manufacturing the same |
JPS5892869A (ja) * | 1981-11-27 | 1983-06-02 | Hitachi Ltd | 配線パターンの欠陥判定方法およびその装置 |
JPS58206165A (ja) * | 1982-05-26 | 1983-12-01 | Toshiba Corp | 不揮発性半導体メモリ装置 |
JPS62229982A (ja) * | 1986-03-31 | 1987-10-08 | Toshiba Corp | 半導体記憶装置 |
GB2200795B (en) * | 1987-02-02 | 1990-10-03 | Intel Corp | Eprom cell with integral select transistor |
US4785375A (en) * | 1987-06-11 | 1988-11-15 | Tam Ceramics, Inc. | Temperature stable dielectric composition at high and low frequencies |
FR2626401B1 (fr) * | 1988-01-26 | 1990-05-18 | Sgs Thomson Microelectronics | Memoire eeprom a grille flottante avec transistor de selection de ligne de source |
JP2844475B2 (ja) * | 1989-07-21 | 1999-01-06 | セイコーインスツルメンツ株式会社 | 半導体不揮発性メモリ |
IT1235690B (it) * | 1989-04-07 | 1992-09-21 | Sgs Thomson Microelectronics | Procedimento di fabbricazione per una matrice di celle eprom organizzate a tovaglia. |
JPH02295169A (ja) * | 1989-05-09 | 1990-12-06 | Nec Corp | 不揮発性半導体記憶装置 |
JPH088313B2 (ja) * | 1989-07-25 | 1996-01-29 | 株式会社東芝 | 不揮発性半導体記憶装置及びその製造方法 |
-
1989
- 1989-12-22 IT IT02284489A patent/IT1236980B/it active IP Right Grant
-
1990
- 1990-12-11 EP EP90203252A patent/EP0434121B1/en not_active Expired - Lifetime
- 1990-12-11 DE DE69017863T patent/DE69017863T2/de not_active Expired - Fee Related
- 1990-12-19 US US07/631,008 patent/US5241499A/en not_active Expired - Lifetime
- 1990-12-21 JP JP2405095A patent/JP2824702B2/ja not_active Expired - Lifetime
-
1993
- 1993-06-18 US US08/077,934 patent/US5330938A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5241499A (en) | 1993-08-31 |
IT8922844A1 (it) | 1991-06-22 |
DE69017863T2 (de) | 1995-08-03 |
DE69017863D1 (de) | 1995-04-20 |
US5330938A (en) | 1994-07-19 |
IT8922844A0 (it) | 1989-12-22 |
JP2824702B2 (ja) | 1998-11-18 |
JPH0536986A (ja) | 1993-02-12 |
EP0434121A1 (en) | 1991-06-26 |
EP0434121B1 (en) | 1995-03-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
0001 | Granted | ||
TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19961227 |