KR900019261A - 반도체장치 - Google Patents
반도체장치 Download PDFInfo
- Publication number
- KR900019261A KR900019261A KR1019900007610A KR900007610A KR900019261A KR 900019261 A KR900019261 A KR 900019261A KR 1019900007610 A KR1019900007610 A KR 1019900007610A KR 900007610 A KR900007610 A KR 900007610A KR 900019261 A KR900019261 A KR 900019261A
- Authority
- KR
- South Korea
- Prior art keywords
- region
- regions
- semiconductor
- main
- main surface
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims 7
- 239000010410 layer Substances 0.000 claims 3
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 239000002344 surface layer Substances 0.000 claims 2
- 239000012535 impurity Substances 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Bipolar Transistors (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 IGBT의 제1실시예의 단면도, 제2도는 제1도에 도시된 IGBT의 제조공정을 설명하기 위한 단면도, 제3도는 IGBT의 래치업 전류와 다결정 실리콘 비저항과의 관계를 나타낸 특성도.
Claims (1)
- (a)반도체기판의 한쪽 주면에 노출되는 면을 가지며, 1층 또는 불순물농도가 다른 복수층의 1도전형 반도체층으로 이루어진 제1영역(402, 702, 202)과, (b)반도체기판의 상기 한쪽의 주면으로부터 선택적으로 형성되는 반대도 전형 반도체층으로 이루어진 제2영역(405, 705, 205), (c)제2영역의 상기 한쪽의 주면으로부터 그 영역내에 선택적으로 형성되는 1도전형 반도체형으로 이루어진 제3영역(406, 706, 806), (d)제1영역과 제3영역에 끼워지며, 상기 한쪽의 주면으로 노출되고, 또 제2영역의 표면층을 포함하는 반대도전형 반도체표면층으로 이루어진 채널형성영역(410, 710, 810), (e)상기 채널형성영역과 게이트절연막을 매개하여 대항하는 게이트전극(404, 704, 204), (f)제2 및 제3영역상에 형성되고, 또 제2영역과 오오믹접합을 함과 더불어, 제3영역과 개재층(408, 708, 808)df 거쳐서 전기접속되는 금속전극막(409, 709, 809)을 구비하여 구성된 것을 특징으로 하는 반도체장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1-129345 | 1989-05-23 | ||
JP1129345A JPH0793434B2 (ja) | 1989-05-23 | 1989-05-23 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR900019261A true KR900019261A (ko) | 1990-12-24 |
KR940002773B1 KR940002773B1 (ko) | 1994-04-02 |
Family
ID=15007314
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900007610A KR940002773B1 (ko) | 1989-05-23 | 1990-05-23 | 반도체장치 |
Country Status (4)
Country | Link |
---|---|
US (1) | US5032880A (ko) |
EP (1) | EP0399530A1 (ko) |
JP (1) | JPH0793434B2 (ko) |
KR (1) | KR940002773B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100486346B1 (ko) * | 1997-08-20 | 2006-04-21 | 페어차일드코리아반도체 주식회사 | 전력용반도체소자및그제조방법 |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2856853B2 (ja) * | 1990-07-03 | 1999-02-10 | 株式会社東芝 | 半導体装置 |
DE4216810C2 (de) * | 1991-05-31 | 1999-09-16 | Fuji Electric Co Ltd | Steuerschaltung für einen Leitfähigkeitsänderungs-MISFET |
US5163964A (en) * | 1991-06-26 | 1992-11-17 | Zimmer, Inc. | Orthopaedic prosthesis with access in collar |
JP2650519B2 (ja) * | 1991-07-25 | 1997-09-03 | 株式会社日立製作所 | 横型絶縁ゲートトランジスタ |
US5322802A (en) * | 1993-01-25 | 1994-06-21 | North Carolina State University At Raleigh | Method of fabricating silicon carbide field effect transistor |
JP3334290B2 (ja) * | 1993-11-12 | 2002-10-15 | 株式会社デンソー | 半導体装置 |
JPH10335649A (ja) * | 1997-05-27 | 1998-12-18 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US5877047A (en) * | 1997-08-15 | 1999-03-02 | Motorola, Inc. | Lateral gate, vertical drift region transistor |
EP1050908B1 (en) * | 1998-01-22 | 2016-01-20 | Mitsubishi Denki Kabushiki Kaisha | Insulating gate type bipolar semiconductor device |
US6617643B1 (en) * | 2002-06-28 | 2003-09-09 | Mcnc | Low power tunneling metal-oxide-semiconductor (MOS) device |
US6885079B2 (en) * | 2002-10-23 | 2005-04-26 | Jeng-Jye Shau | Methods and configuration to simplify connections between polysilicon layer and diffusion area |
US20130277793A1 (en) * | 2012-04-24 | 2013-10-24 | Fairchild Korea Semiconductor, Ltd. | Power device and fabricating method thereof |
US9685335B2 (en) | 2012-04-24 | 2017-06-20 | Fairchild Korea Semiconductor Ltd. | Power device including a field stop layer |
US10181513B2 (en) | 2012-04-24 | 2019-01-15 | Semiconductor Components Industries, Llc | Power device configured to reduce electromagnetic interference (EMI) noise |
CN103268888B (zh) * | 2013-05-13 | 2015-09-09 | 电子科技大学 | 一种具有发射极镇流电阻的igbt器件 |
JP6088401B2 (ja) * | 2013-11-08 | 2017-03-01 | 株式会社豊田中央研究所 | 逆導通igbt |
JP6362925B2 (ja) * | 2014-05-30 | 2018-07-25 | 三菱電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
CN107946363A (zh) * | 2017-12-18 | 2018-04-20 | 深圳市晶特智造科技有限公司 | 平面型垂直双扩散金属氧化物晶体管及其制作方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3016749A1 (de) * | 1980-04-30 | 1981-11-05 | Siemens AG, 1000 Berlin und 8000 München | Kontakt fuer mis-halbleiterbauelement und verfahren zu seiner herstellung |
DE3103444A1 (de) * | 1981-02-02 | 1982-10-21 | Siemens AG, 1000 Berlin und 8000 München | Vertikal-mis-feldeffekttransistor mit kleinem durchlasswiderstand |
JPS6027170A (ja) * | 1983-07-22 | 1985-02-12 | Toshiba Corp | 二重拡散絶縁ゲ−ト型電界効界トランジスタ |
JPS62266871A (ja) * | 1986-05-15 | 1987-11-19 | Fuji Electric Co Ltd | たて形mosfet |
JPS63236366A (ja) * | 1987-03-25 | 1988-10-03 | Hitachi Ltd | 縦形電界効果トランジスタ |
JPS63244777A (ja) * | 1987-03-31 | 1988-10-12 | Toshiba Corp | Mos型電界効果トランジスタ |
JPH0622235B2 (ja) * | 1987-05-21 | 1994-03-23 | 日本電気株式会社 | 半導体装置の製造方法 |
JPS6410672A (en) * | 1987-07-03 | 1989-01-13 | Nissan Motor | Vertical mosfet |
JP2786196B2 (ja) * | 1987-07-21 | 1998-08-13 | 株式会社デンソー | 絶縁ゲート型半導体装置 |
JP2521783B2 (ja) * | 1987-09-28 | 1996-08-07 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JPH01135071A (ja) * | 1987-11-20 | 1989-05-26 | Fuji Electric Co Ltd | 絶縁ゲート型バイポーラトランジスタ |
-
1989
- 1989-05-23 JP JP1129345A patent/JPH0793434B2/ja not_active Expired - Fee Related
-
1990
- 1990-05-22 US US07/526,895 patent/US5032880A/en not_active Expired - Lifetime
- 1990-05-23 KR KR1019900007610A patent/KR940002773B1/ko not_active IP Right Cessation
- 1990-05-23 EP EP90109897A patent/EP0399530A1/en not_active Ceased
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100486346B1 (ko) * | 1997-08-20 | 2006-04-21 | 페어차일드코리아반도체 주식회사 | 전력용반도체소자및그제조방법 |
Also Published As
Publication number | Publication date |
---|---|
KR940002773B1 (ko) | 1994-04-02 |
US5032880A (en) | 1991-07-16 |
JPH02307274A (ja) | 1990-12-20 |
JPH0793434B2 (ja) | 1995-10-09 |
EP0399530A1 (en) | 1990-11-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20060331 Year of fee payment: 13 |
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LAPS | Lapse due to unpaid annual fee |