JP2010239146A - リソグラフィ装置 - Google Patents
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70991—Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
- G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
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- G—PHYSICS
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C9/00—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important
- B05C9/08—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation
- B05C9/12—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation the auxiliary operation being performed after the application
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- G—PHYSICS
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
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Abstract
【解決手段】液浸リソグラフィ装置の対象物W、基板テーブルWT、又はその両方から能動的に液体を除去するための能動型乾燥ステーションADSが投射システムと基板露光後処理モジュールとの間に設けられ、基板テーブルWTは該能動型乾燥ステーションADSに対象物Wを搬送し、該能動型乾燥ステーションADSがガス流手段を有する。
【選択図】図1
Description
1.ステップ・モードでは、マスク・テーブルMT及び基板テーブルWTは、基本的に静止状態に保たれ、一方投射ビームに付与されたパターン全体は、1回で(すなわち1回の静止した露光で)対象部分C上に投射される。次いで、基板テーブルWTは、X方向及び/又はY方向に移動されて、異なる対象部分Cを露光することができる。ステップ・モードでは、照射野の最大サイズが、1回の静止した露光で投影される、対象部分Cのサイズを限定する。
2.走査モードでは、マスク・テーブルMT及び基板テーブルWTが、投射ビームに付与されたパターンが対象部分C上に投射される間に(すなわち1回の動的な露光)、同期して走査される。マスク・テーブルMTに対する基板テーブルWTの速度及び方向は、投射システムPLの倍率(縮小率)及び像反転特性によって決められる。走査モードでは、照射野の最大サイズが、1回の動的な露光の対象部分の幅(非走査方向)を限定し、一方走査運動の移動距離が、対象部分の高さ(走査方向)を決める。
3.他のモードでは、マスク・テーブルMTは、基本的に静止状態に保たれてプログラム可能なパターン形成手段を保持し、基板テーブルWTは、投射ビームに付与されたパターンが対象部分C上に投射される間、移動される又は走査される。このモードでは、一般に、パルス放射源が使用され、プログラム可能なパターン形成手段が、基板テーブルWTの移動毎の後に、又は走査中の連続する放射パルス間に、必要に応じて更新される。このモードの動作は、上記で言及した種類のプログラム可能なミラー・アレイなどのプログラム可能なパターン形成手段を利用する、マスクを使用しないリソグラフィに容易に適用することができる。
まったく異なる使用のモードを使用することもできる。
BD ビーム送出システム
AM 調節手段
IL 照明システム、照明器
IN インテグレータ
CO 集光レンズ
PB 投射ビーム
MT 第1の支持構造、対物テーブル、マスク・テーブル
MA パターン形成手段、マスク
PL 用品、投射システム、レンズ
W 基板
C 対象部分
IF 干渉計、位置センサ
WT 基板テーブル、対物テーブル
M1、M2 マスク位置合わせマーク
P1、P2 基板位置合わせマーク
LSS 液体供給システム
ADS 能動型乾燥ステーション
5 浸漬液
10 ガス流手段、シャワー・ヘッド
50 注入口
60 排出口
110 中央流路
120 外側流路
IN 注入口
OUT 排出口
Claims (30)
- リソグラフィ装置であって、
放射の投射ビームを供給するための照明システムと、
前記投射ビームにパターンをその断面で付与するように働くパターン形成手段を支持するための支持構造と、
基板を保持するための基板テーブルと、
前記パターン形成されたビームを前記基板の対象部分上に投射するための投射システムと、
前記投射システムと前記基板テーブル上に位置する対象物との間のスペースを少なくとも部分的に浸漬液で充填するための液体供給システムとを含み、
前記対象物、前記基板テーブル、又はその両方から能動的に液体を除去するための能動型乾燥ステーションをさらに含むことを特徴とする装置。 - 前記能動型乾燥ステーションが、前記投射システムと基板露光後処理モジュールとの間に位置する、請求項1に記載の装置。
- 前記基板テーブルが、前記能動型乾燥ステーションに前記対象物を搬送する、請求項1又は2に記載の装置。
- 前記基板テーブルが、前記能動型乾燥ステーションによって前記対象物から能動的に液体が除去される間、前記対象物を支持する、請求項1、2又は3に記載の装置。
- 前記能動型乾燥ステーションが、前記対象物、前記基板テーブル、又はその両方の表面の上にガス流を供給するためのガス流手段を含む、前記請求項のいずれか一項に記載の装置。
- 前記能動型乾燥ステーションが、前記対象物、前記基板テーブル、又はその両方の表面上にガスを供給するための少なくとも1つのガス注入口を含む、請求項1から5までのいずれか一項に記載の装置。
- 前記ガス注入口が、ガス・ナイフを形成する、請求項6に記載の装置。
- 前記ガス・ナイフが、追加のガス注入口と、前記ガス注入口間に配置されたガス排出口とをさらに含む、請求項7に記載の装置。
- 前記対象物、前記基板テーブル、又はその両方の表面からガスを排出するためのガス排出口をさらに含み、
前記ガス注入口が、実質的に前記ガス排出口の周辺部を囲う、請求項6に記載の装置。 - 前記ガス注入口が、少なくとも10個の注入口を持つガス・シャワーを含む、請求項6に記載の装置。
- 前記能動型乾燥ステーションが、前記対象物、前記基板テーブル、又はその両方の表面に、浸漬液を溶解する液体を供給するための浸漬液体溶解液供給手段を含む、前記請求項のいずれか一項に記載の装置。
- 前記浸漬液体溶解液が、前記浸漬液より揮発性が高い、請求項11に記載の装置。
- 前記浸漬液体溶解液が、ケトン又はアルコールである、請求項11又は12に記載の装置。
- 前記能動型乾燥ステーションが、前記対象物、前記基板テーブル、又はその両方の表面からガス、液体、又はその両方を除去するための、少なくとも1つのガス排出口を含む、前記請求項のいずれか一項に記載の装置。
- 前記能動型乾燥ステーションが、前記対象物、前記基板テーブル、又はその両方を回転させるためのスピナーを含む、前記請求項のいずれか一項に記載の装置。
- 前記対象物が基板を含む、前記請求項のいずれか一項に記載の装置。
- 前記対象物がセンサを含む、前記請求項のいずれか一項に記載の装置。
- デバイス製造方法であって、
基板テーブルによって支持される基板を設けるステップと、
照明システムを使用して放射の投射ビームを供給するステップと、
パターン形成手段を使用して前記投射ビームにパターンをその断面で付与するステップと、
投射システムの最後の要素と前記基板テーブル上の対象物との間に浸漬液を供給するステップと、
前記投射システムを使用して、前記パターン形成された放射のビームを前記対象物の対象部分上に投射するステップとを含み、
前記対象物、前記基板テーブル、又はその両方から能動的に液体を除去するステップを特徴とする方法。 - 前記対象物、前記基板テーブル、又はその両方の表面の上にガス流を供給するステップを含む、請求項18に記載の方法。
- 前記ガス流が、ガス・ナイフを形成する、請求項19に記載の方法。
- 前記ガス・ナイフが、2つの位置においてガスを供給するステップと、前記2つの位置間の位置からガスを排出するステップとを含む、請求項20に記載の方法。
- ガスが供給される位置の周辺部を実質的に囲繞する位置において、前記対象物、前記基板テーブル、又はその両方の表面からガスを排出するステップをさらに含む、請求項19に記載の方法。
- 少なくとも10個の注入口を持つガス・シャワーを使用してガスを供給するステップを含む、請求項19に記載の方法。
- 前記対象物、前記基板テーブル、又はその両方の表面に、前記浸漬液を溶解する溶解液体を供給するステップをさらに含む、請求項18に記載の方法。
- 前記溶解液体が、前記浸漬液より揮発性が高い、請求項24に記載の方法。
- 前記溶解液体が、ケトン又はアルコールを含む、請求項24に記載の方法。
- 前記対象物、前記基板テーブル、又はその両方の表面からガス、液体、又はその両方を除去するステップを含む、請求項18に記載の方法。
- 前記対象物、前記基板テーブル、又はその両方を回転させるステップを含む、請求項18から27までのいずれか一項に記載の方法。
- 前記対象物が基板を含む、請求項18から28までのいずれか一項に記載の方法。
- 前記対象物がセンサを含む、請求項18から29までのいずれか一項に記載の方法。
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Application Number | Priority Date | Filing Date | Title |
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US10/847,661 US7616383B2 (en) | 2004-05-18 | 2004-05-18 | Lithographic apparatus and device manufacturing method |
US10/847661 | 2004-05-18 |
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JP2005143396A Division JP4669735B2 (ja) | 2004-05-18 | 2005-05-17 | リソグラフィ装置及びデバイス製造方法 |
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JP5236691B2 JP5236691B2 (ja) | 2013-07-17 |
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JP2005143396A Expired - Fee Related JP4669735B2 (ja) | 2004-05-18 | 2005-05-17 | リソグラフィ装置及びデバイス製造方法 |
JP2009044651A Active JP4997258B2 (ja) | 2004-05-18 | 2009-02-26 | 能動型乾燥ステーション及び能動乾燥方法 |
JP2010132174A Active JP5236691B2 (ja) | 2004-05-18 | 2010-06-09 | リソグラフィ装置 |
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JP2009044651A Active JP4997258B2 (ja) | 2004-05-18 | 2009-02-26 | 能動型乾燥ステーション及び能動乾燥方法 |
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EP (2) | EP1598705A1 (ja) |
JP (3) | JP4669735B2 (ja) |
KR (1) | KR100610646B1 (ja) |
CN (2) | CN101587303B (ja) |
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Cited By (1)
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JP2017524974A (ja) * | 2014-06-16 | 2017-08-31 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置、基板を搬送する方法、及びデバイス製造方法 |
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DE602004030247D1 (de) | 2003-07-09 | 2011-01-05 | Nippon Kogaku Kk | Belichtungsvorrichtung und verfahren zur bauelementherstellung |
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TWI266964B (en) | 2006-11-21 |
JP4997258B2 (ja) | 2012-08-08 |
JP5236691B2 (ja) | 2013-07-17 |
JP2009164623A (ja) | 2009-07-23 |
JP4669735B2 (ja) | 2011-04-13 |
US20050259232A1 (en) | 2005-11-24 |
US10761438B2 (en) | 2020-09-01 |
EP2267538B1 (en) | 2012-03-14 |
CN101587303B (zh) | 2011-07-20 |
EP1598705A1 (en) | 2005-11-23 |
EP2267538A1 (en) | 2010-12-29 |
TW200608150A (en) | 2006-03-01 |
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US7616383B2 (en) | 2009-11-10 |
KR20060047974A (ko) | 2006-05-18 |
US9623436B2 (en) | 2017-04-18 |
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US20140224173A1 (en) | 2014-08-14 |
US20100014061A1 (en) | 2010-01-21 |
US8638415B2 (en) | 2014-01-28 |
JP2005333134A (ja) | 2005-12-02 |
KR100610646B1 (ko) | 2006-08-10 |
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