JP2010021568A - リソグラフィ装置及びデバイス製造方法 - Google Patents
リソグラフィ装置及びデバイス製造方法 Download PDFInfo
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- JP2010021568A JP2010021568A JP2009230362A JP2009230362A JP2010021568A JP 2010021568 A JP2010021568 A JP 2010021568A JP 2009230362 A JP2009230362 A JP 2009230362A JP 2009230362 A JP2009230362 A JP 2009230362A JP 2010021568 A JP2010021568 A JP 2010021568A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
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Abstract
【解決手段】浸漬式リソグラフィ装置において表面を乾燥するように構成されたガス・ナイフは、乾燥されている表面の上の液体膜内に圧力勾配が確立されるようにすることによって液体を除去するよう最適化される。
【選択図】図8
Description
放射ビームB(例えば、UV放射又はEUV放射)を調整するように構成された照明系(照明装置)ILと、
パターン形成装置(例えば、マスク)MAを支持するように構成され、特定のパラメータに従ってパターン形成装置を正確に位置決めするように構成された第1の位置決め装置PMに接続された支持構造(例えば、マスク・テーブル)MTと、
基板(例えば、レジスト被膜のウェハ)Wを保持するように構成され、特定のパラメータに従って基板を正確に位置決めするように構成された第2の位置決め装置PWに接続された基板テーブル(例えば、ウェハ・テーブル)WTと、
パターン形成装置MAによって放射ビームBに付与されたパターンを基板Wの目標部分C(例えば、1つ又は複数のダイを含む)上に投影するように構成された投影系(例えば、屈折投影レンズ系)PSとを含む。
Claims (7)
- パターン形成装置から液体を介して基板上にパターンを投影するように構成されるリソグラフィ投影装置であって、該リソグラフィ投影装置が、表面から液体を除去するように構成されたガス・ナイフを含み、前記ガス・ナイフが、前記液体内における圧力勾配の形成によって、前記液体の通過を阻止するように構成されている、リソグラフィ投影装置。
- 前記表面と、前記ガス・ナイフと、抜き取り部との間に少なくとも0.05barの局部圧力が確立されるようにガスの流量を制御するよう構成された流れ制御部をさらに含む、請求項1に記載のリソグラフィ投影装置。
- 前記ガス・ナイフが、そこから50〜200m/sの速度でガス流を供給するように構成されている、請求項1または2に記載のリソグラフィ投影装置。
- 前記ガス・ナイフが、前記液体に浸漬後の要素を乾燥させるための、前記装置の乾燥部の一部、又は内部に前記液体が存在する空間を少なくとも部分的に囲む液体閉じ込め構造の一部である、請求項1から3のいずれかに記載のリソグラフィ投影装置。
- 液体が、その液体の上を流れるガスのせん断作用によって除去される、請求項1から4のいずれかに記載のリソグラフィ投影装置。
- パターン形成装置から液体を介して基板上にパターンを投影するように構成され、表面にガスを供給するように構成されたガス・ナイフを含むリソグラフィ投影装置であって、前記ガス・ナイフがガスを排出する流出口を含み、前記流出口の幅が10μmから50μmである、リソグラフィ投影装置。
- パターン形成された放射ビームを、液体を介して基板上に投影する工程を含むデバイス製造方法であって、液体が、その液体内にガスによって形成される圧力勾配によって、表面から除去される、デバイス製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/167,552 | 2005-06-28 | ||
US11/167,552 US7834974B2 (en) | 2005-06-28 | 2005-06-28 | Lithographic apparatus and device manufacturing method |
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Application Number | Title | Priority Date | Filing Date |
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JP2006176038A Division JP4723425B2 (ja) | 2005-06-28 | 2006-06-27 | リソグラフィ装置 |
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JP2010021568A true JP2010021568A (ja) | 2010-01-28 |
JP5437761B2 JP5437761B2 (ja) | 2014-03-12 |
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JP2006176038A Active JP4723425B2 (ja) | 2005-06-28 | 2006-06-27 | リソグラフィ装置 |
JP2009230362A Active JP5437761B2 (ja) | 2005-06-28 | 2009-10-02 | リソグラフィ装置及びデバイス製造方法 |
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JP2006176038A Active JP4723425B2 (ja) | 2005-06-28 | 2006-06-27 | リソグラフィ装置 |
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US (4) | US7834974B2 (ja) |
EP (1) | EP1739492B1 (ja) |
JP (2) | JP4723425B2 (ja) |
KR (1) | KR100803266B1 (ja) |
CN (2) | CN102117018B (ja) |
SG (1) | SG128649A1 (ja) |
TW (2) | TWI431434B (ja) |
Families Citing this family (22)
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US7372541B2 (en) * | 2002-11-12 | 2008-05-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
SG2010050110A (en) * | 2002-11-12 | 2014-06-27 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US7370659B2 (en) | 2003-08-06 | 2008-05-13 | Micron Technology, Inc. | Photolithographic stepper and/or scanner machines including cleaning devices and methods of cleaning photolithographic stepper and/or scanner machines |
US7834974B2 (en) | 2005-06-28 | 2010-11-16 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7583358B2 (en) | 2005-07-25 | 2009-09-01 | Micron Technology, Inc. | Systems and methods for retrieving residual liquid during immersion lens photolithography |
US7456928B2 (en) | 2005-08-29 | 2008-11-25 | Micron Technology, Inc. | Systems and methods for controlling ambient pressure during processing of microfeature workpieces, including during immersion lithography |
US8472004B2 (en) | 2006-01-18 | 2013-06-25 | Micron Technology, Inc. | Immersion photolithography scanner |
US9632425B2 (en) | 2006-12-07 | 2017-04-25 | Asml Holding N.V. | Lithographic apparatus, a dryer and a method of removing liquid from a surface |
US8634053B2 (en) * | 2006-12-07 | 2014-01-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP2249205B1 (en) * | 2008-05-08 | 2012-03-07 | ASML Netherlands BV | Immersion lithographic apparatus, drying device, immersion metrology apparatus and device manufacturing method |
US8421993B2 (en) | 2008-05-08 | 2013-04-16 | Asml Netherlands B.V. | Fluid handling structure, lithographic apparatus and device manufacturing method |
SG166747A1 (en) * | 2009-05-26 | 2010-12-29 | Asml Netherlands Bv | Fluid handling structure, lithographic apparatus and device manufacturing method |
NL2005089A (nl) * | 2009-09-23 | 2011-03-28 | Asml Netherlands Bv | Fluid handling structure, lithographic apparatus and device manufacturing method. |
NL2006054A (en) | 2010-02-09 | 2011-08-10 | Asml Netherlands Bv | Fluid handling structure, lithographic apparatus and device manufacturing method. |
EP2381310B1 (en) | 2010-04-22 | 2015-05-06 | ASML Netherlands BV | Fluid handling structure and lithographic apparatus |
NL2006615A (en) | 2010-05-11 | 2011-11-14 | Asml Netherlands Bv | Fluid handling structure, lithographic apparatus and device manufacturing method. |
CN104238277B (zh) * | 2013-06-19 | 2016-12-28 | 上海微电子装备有限公司 | 一种浸没式光刻机的流场维持方法 |
CN104950586B (zh) * | 2014-03-25 | 2017-06-06 | 上海微电子装备有限公司 | 一种浸液限制机构 |
JP6606618B2 (ja) | 2016-01-13 | 2019-11-13 | エーエスエムエル ネザーランズ ビー.ブイ. | 流体ハンドリング構造及びリソグラフィ装置 |
WO2017137129A1 (en) * | 2016-02-08 | 2017-08-17 | Asml Netherlands B.V. | Lithographic apparatus, method for unloading a substrate and method for loading a substrate |
CN109731877B (zh) * | 2019-03-20 | 2021-02-26 | 东旭(营口)光电显示有限公司 | 玻璃基板清洗的方法 |
CN113138537B (zh) * | 2020-01-17 | 2023-10-13 | 浙江大学 | 一种用于浸没式光刻机的浸液供给回收装置 |
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US9448494B2 (en) | 2016-09-20 |
US9766556B2 (en) | 2017-09-19 |
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CN102117018B (zh) | 2012-09-26 |
US9099501B2 (en) | 2015-08-04 |
US20070030464A1 (en) | 2007-02-08 |
KR100803266B1 (ko) | 2008-02-14 |
EP1739492A2 (en) | 2007-01-03 |
TW200710593A (en) | 2007-03-16 |
US20150309422A1 (en) | 2015-10-29 |
CN102117018A (zh) | 2011-07-06 |
KR20070001022A (ko) | 2007-01-03 |
JP4723425B2 (ja) | 2011-07-13 |
EP1739492A3 (en) | 2007-04-18 |
US7834974B2 (en) | 2010-11-16 |
TW201129880A (en) | 2011-09-01 |
JP2007013151A (ja) | 2007-01-18 |
JP5437761B2 (ja) | 2014-03-12 |
CN1892438A (zh) | 2007-01-10 |
EP1739492B1 (en) | 2013-04-24 |
TWI340298B (en) | 2011-04-11 |
SG128649A1 (en) | 2007-01-30 |
US20110025994A1 (en) | 2011-02-03 |
CN1892438B (zh) | 2011-05-04 |
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