JP4697138B2 - 液浸リソグラフィ装置、液浸リソグラフィ方法、デバイス製造方法 - Google Patents
液浸リソグラフィ装置、液浸リソグラフィ方法、デバイス製造方法 Download PDFInfo
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- JP4697138B2 JP4697138B2 JP2006518633A JP2006518633A JP4697138B2 JP 4697138 B2 JP4697138 B2 JP 4697138B2 JP 2006518633 A JP2006518633 A JP 2006518633A JP 2006518633 A JP2006518633 A JP 2006518633A JP 4697138 B2 JP4697138 B2 JP 4697138B2
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70975—Assembly, maintenance, transport or storage of apparatus
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49826—Assembling or joining
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- Engineering & Computer Science (AREA)
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
本願は2003年7月8日に出願された米国特許仮出願第60/485,868号の優先権を主張し、その全体を援用して本文の記載の一部とする。
本発明は概して半導体処理装置に関する。より詳細には、本発明は液浸リソグラフィシステムにおいて、レンズの表面とレンズに相対して移動される平面との間に液体を効率的に収容することを可能とするための方法及び装置に関する。
半導体処理に用いられるフォトリソグラフィ機のような精密機器について、精密機器の例えば精度のような性能に影響を及ぼす因子は一般に対処しなければならず、かつ、可能な限り取り除かなければならない。液浸リソグラフィ露光システムのような精密機器の性能に悪影響が及ぼされるときは、精密機器を用いて作られた製品は不適切に製作されるかもしれず、それによって機能が不適切になるであろう。
Claims (13)
- レンズと基板との間に液体を設けて該基板を露光する液浸リソグラフィ装置であって、
前記基板を支持するテーブルアセンブリと、センサーと、を備え、
前記センサーの上面が前記テーブルアセンブリ上に設けられ、該センサーの上面と前記テーブルアセンブリの上面とが実質的に同じ高さにされ、
前記テーブルアセンブリは、前記レンズの下方に配置されて前記センサーの上面と前記レンズとの間に前記液体の層を維持可能なギャップを形成する液浸リソグラフィ装置。 - 前記テーブルアセンブリに支持された前記基板の上面が前記センサーの上面および前記テーブルアセンブリの上面と実質的に同じ高さにされる請求項1に記載の液浸リソグラフィ装置。
- レンズと基板との間に液体を設けて該基板を露光する液浸リソグラフィ装置であって、
前記基板を支持するテーブルアセンブリと、センサーと、を備え、
前記センサーの上面が前記テーブルアセンブリ上に設けられ、該センサーの上面と前記テーブルアセンブリの上面とを含む面が平面状にされ、
前記テーブルアセンブリは、前記レンズの下方に配置されて前記センサーの上面と前記レンズとの間に前記液体の層を維持可能なギャップを形成する液浸リソグラフィ装置。 - 前記テーブルアセンブリに支持された前記基板の表面と、前記センサーの上面と、前記テーブルアセンブリの上面とを含む面が実質的に平面状にされる請求項3に記載の液浸リソグラフィ装置。
- 前記センサーは、該センサーと前記レンズとの間に設けられる前記液体と共に前記レンズを通して見られる請求項1〜4のいずれか一項に記載の液浸リソグラフィ装置。
- 前記テーブルアセンブリは、前記基板としてウェハを支持する請求項1〜5のいずれか一項に記載の液浸リソグラフィ装置。
- レンズと基板との間に液体を設けて該基板を露光する液浸リソグラフィ方法であって、
前記基板を支持するテーブルアセンブリ上にセンサーの上面を設けて、該センサーの上面と前記テーブルアセンブリの上面とを実質的に同じ高さにすることを含み、
前記テーブルアセンブリを前記レンズの下方に配置させて、前記センサーの上面と前記レンズとの間に前記液体の層を維持可能なギャップを形成することを含む液浸リソグラフィ方法。 - 前記テーブルアセンブリによって前記基板を支持して、該基板の上面と前記センサーの上面と前記テーブルアセンブリの上面とを実質的に同じ高さにすることを含む請求項7に記載の液浸リソグラフィ方法。
- レンズと基板との間に液体を設けて該基板を露光する液浸リソグラフィ方法であって、
前記基板を支持するテーブルアセンブリ上にセンサーの上面を設けて、該センサーの上面と前記テーブルアセンブリの上面とを含む面を平面状にすることを含み、
前記テーブルアセンブリを前記レンズの下方に配置させて、前記センサーの上面と前記レンズとの間に前記液体の層を維持可能なギャップを形成することを含む液浸リソグラフィ方法。 - 前記テーブルアセンブリによって前記基板を支持して、該基板の上面と前記センサーの上面と前記テーブルアセンブリの上面とを含む面を平面状にすることを含む請求項9に記載の液浸リソグラフィ方法。
- 前記テーブルアセンブリによって前記基板としてウェハを支持することを含む請求項7〜10のいずれか一項に記載の液浸リソグラフィ方法。
- 基板にパターンを転写してデバイスを製造するデバイス製造方法であって、
請求項1〜6のいずれか一項に記載の液浸リソグラフィ装置を用いて、前記基板に前記パターンを露光することと、
前記パターンが露光された前記基板を現像することと、
を含むデバイス製造方法。 - 基板にパターンを転写してデバイスを製造するデバイス製造方法であって、
請求項7〜11のいずれか一項に記載の液浸リソグラフィ方法を用いて、前記基板に前記パターンを露光することと、
前記パターンが露光された前記基板を現像することと、
を含むデバイス製造方法。
Applications Claiming Priority (3)
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US48586803P | 2003-07-08 | 2003-07-08 | |
US60/485,868 | 2003-07-08 | ||
PCT/US2004/017452 WO2005010611A2 (en) | 2003-07-08 | 2004-06-02 | Wafer table for immersion lithography |
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JP2010140980A Division JP5381910B2 (ja) | 2003-07-08 | 2010-06-21 | 液浸露光装置、液浸露光方法、及びデバイス製造方法 |
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JP2007527611A JP2007527611A (ja) | 2007-09-27 |
JP4697138B2 true JP4697138B2 (ja) | 2011-06-08 |
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JP2010140980A Expired - Fee Related JP5381910B2 (ja) | 2003-07-08 | 2010-06-21 | 液浸露光装置、液浸露光方法、及びデバイス製造方法 |
JP2012078273A Expired - Fee Related JP5472355B2 (ja) | 2003-07-08 | 2012-03-29 | 液浸露光装置、液浸露光方法、デバイス製造方法、及び液浸露光装置の製造方法 |
JP2013222780A Expired - Fee Related JP5708755B2 (ja) | 2003-07-08 | 2013-10-25 | 液浸リソグラフィ用ウェハテーブル |
JP2013222782A Expired - Fee Related JP5708756B2 (ja) | 2003-07-08 | 2013-10-25 | 液浸リソグラフィ用ウェハテーブル |
JP2014173383A Expired - Fee Related JP5761435B2 (ja) | 2003-07-08 | 2014-08-28 | 液浸リソグラフィ用ウェハテーブル |
JP2014173592A Expired - Fee Related JP5761436B2 (ja) | 2003-07-08 | 2014-08-28 | 液浸リソグラフィ用ウェハテーブル |
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JP2012078273A Expired - Fee Related JP5472355B2 (ja) | 2003-07-08 | 2012-03-29 | 液浸露光装置、液浸露光方法、デバイス製造方法、及び液浸露光装置の製造方法 |
JP2013222780A Expired - Fee Related JP5708755B2 (ja) | 2003-07-08 | 2013-10-25 | 液浸リソグラフィ用ウェハテーブル |
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US (5) | US7301607B2 (ja) |
EP (6) | EP2853943B1 (ja) |
JP (7) | JP4697138B2 (ja) |
HK (2) | HK1206111A1 (ja) |
TW (6) | TWI476503B (ja) |
WO (1) | WO2005010611A2 (ja) |
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