JP5286431B2 - リソグラフィ装置 - Google Patents
リソグラフィ装置 Download PDFInfo
- Publication number
- JP5286431B2 JP5286431B2 JP2012055739A JP2012055739A JP5286431B2 JP 5286431 B2 JP5286431 B2 JP 5286431B2 JP 2012055739 A JP2012055739 A JP 2012055739A JP 2012055739 A JP2012055739 A JP 2012055739A JP 5286431 B2 JP5286431 B2 JP 5286431B2
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- JP
- Japan
- Prior art keywords
- liquid
- substrate
- drain
- gas
- gap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
- G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
基板を保持する基板テーブルと、
使用時に基板テーブル上のオブジェクトのエッジと基板テーブルとの間で漏れる第一液体を受ける基板テーブル内のドレインと、
ドレインから液体及び/又は気体を流すためのドレインへの出口と、
基板テーブルの位置に関係なく、ドレインに第二液を能動的に供給する液体供給装置と、
を備えるリソグラフィ装置が提供される。
基板を保持する基板テーブルと、
基板、基板テーブル及び/又は基板テーブル上のオブジェクトの局所区域の液体を、基板、基板テーブル及び/又はオブジェクトと投影システムとの間に提供する液体供給システムと、
使用時に、基板及び/又はオブジェクトのエッジと基板テーブルとの間で漏れる液体を閉じ込める基板テーブル内のドレインと、
低圧源及びドレインに接続され、ドレインから液体及び/又は気体を除去する出口と、
ドレインを出入りする全ての気体を液体で飽和させる飽和器と、
を備えるリソグラフィ装置が提供される。
Claims (9)
- オブジェクトを保持するテーブルと、
使用時に前記オブジェクトのエッジと前記テーブルとの間のギャップに漏れる第一液体を受ける前記テーブル内のドレインと、
前記ドレインから液体及び/又は気体を流す出口と、
前記ドレインに第二液体の連続流を供給する液体供給装置と、
を備えるリソグラフィ装置。 - 前記ドレインが、前記ギャップ及び前記出口と流体連絡するチャンバを備える、請求項1に記載の装置。
- 前記第二液体が前記チャンバに供給される、請求項2に記載の装置。
- 前記第二液体がそこを通って前記ドレインに流れ込む液体入口をさらに備える、請求項1、2または3に記載の装置。
- 前記ドレインが前記オブジェクトの下に配置される、請求項1ないし4のいずれか一項に記載の装置。
- 前記出口が低圧源に接続される、請求項1ないし5のいずれか一項に記載の装置。
- 前記第一液体及び前記第二液体が同じタイプの液体である、請求項1ないし6のいずれか一項に記載の装置。
- 前記オブジェクトが、基板、センサ又はカバープレートである、請求項1ないし7のいずれか一項に記載の装置。
- 前記ドレインの少なくとも2つを備え、前記ドレインの第一が前記ドレインの第二の半径方向内側に配置される、請求項1ないし8のいずれか一項に記載の装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/806,662 US8514365B2 (en) | 2007-06-01 | 2007-06-01 | Lithographic apparatus and device manufacturing method |
US11/806,662 | 2007-06-01 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008136199A Division JP4954139B2 (ja) | 2007-06-01 | 2008-05-26 | リソグラフィ装置及びデバイス製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012114469A JP2012114469A (ja) | 2012-06-14 |
JP5286431B2 true JP5286431B2 (ja) | 2013-09-11 |
Family
ID=40087753
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008136199A Expired - Fee Related JP4954139B2 (ja) | 2007-06-01 | 2008-05-26 | リソグラフィ装置及びデバイス製造方法 |
JP2012055739A Expired - Fee Related JP5286431B2 (ja) | 2007-06-01 | 2012-03-13 | リソグラフィ装置 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008136199A Expired - Fee Related JP4954139B2 (ja) | 2007-06-01 | 2008-05-26 | リソグラフィ装置及びデバイス製造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8514365B2 (ja) |
JP (2) | JP4954139B2 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4961299B2 (ja) * | 2007-08-08 | 2012-06-27 | キヤノン株式会社 | 露光装置およびデバイス製造方法 |
NL1036709A1 (nl) * | 2008-04-24 | 2009-10-27 | Asml Netherlands Bv | Lithographic apparatus and a method of operating the apparatus. |
NL1036835A1 (nl) * | 2008-05-08 | 2009-11-11 | Asml Netherlands Bv | Lithographic Apparatus and Method. |
NL2004980A (en) * | 2009-07-13 | 2011-01-17 | Asml Netherlands Bv | Heat transfers assembly, lithographic apparatus and manufacturing method. |
JP5269128B2 (ja) * | 2010-03-12 | 2013-08-21 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置および方法 |
NL2007802A (en) | 2010-12-21 | 2012-06-25 | Asml Netherlands Bv | A substrate table, a lithographic apparatus and a device manufacturing method. |
JP6006406B2 (ja) | 2012-05-29 | 2016-10-12 | エーエスエムエル ネザーランズ ビー.ブイ. | オブジェクトホルダ及びリソグラフィ装置 |
WO2015188988A1 (en) | 2014-06-10 | 2015-12-17 | Asml Netherlands B.V. | Lithographic apparatus and method of manufacturing a lithographic apparatus |
CN107168015B (zh) * | 2016-02-29 | 2019-01-04 | 上海微电子装备(集团)股份有限公司 | 一种浸液限制机构及温度补偿方法 |
NL2020011A (en) | 2017-01-26 | 2018-08-01 | Asml Netherlands Bv | A lithography apparatus and a method of manufacturing a device |
KR102616658B1 (ko) | 2017-06-06 | 2023-12-21 | 에이에스엠엘 네델란즈 비.브이. | 지지 테이블로부터 대상물을 언로딩하는 방법 |
NL2021663A (en) | 2017-10-12 | 2019-04-17 | Asml Netherlands Bv | Substrate holder for use in a lithographic apparatus |
Family Cites Families (34)
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US4509852A (en) * | 1980-10-06 | 1985-04-09 | Werner Tabarelli | Apparatus for the photolithographic manufacture of integrated circuit elements |
JPH1012515A (ja) | 1996-06-20 | 1998-01-16 | Nikon Corp | 投影露光装置 |
WO1999049504A1 (fr) | 1998-03-26 | 1999-09-30 | Nikon Corporation | Procede et systeme d'exposition par projection |
DE10229818A1 (de) | 2002-06-28 | 2004-01-15 | Carl Zeiss Smt Ag | Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem |
SG121822A1 (en) * | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
SG121819A1 (en) * | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
EP1420300B1 (en) | 2002-11-12 | 2015-07-29 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1429188B1 (en) | 2002-11-12 | 2013-06-19 | ASML Netherlands B.V. | Lithographic projection apparatus |
SG2010050110A (en) * | 2002-11-12 | 2014-06-27 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
SG150388A1 (en) * | 2002-12-10 | 2009-03-30 | Nikon Corp | Exposure apparatus and method for producing device |
KR20050110033A (ko) * | 2003-03-25 | 2005-11-22 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
TWI616932B (zh) * | 2003-05-23 | 2018-03-01 | Nikon Corp | Exposure device and component manufacturing method |
US7213963B2 (en) * | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
KR101242815B1 (ko) * | 2003-06-13 | 2013-03-12 | 가부시키가이샤 니콘 | 노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조방법 |
US20060285091A1 (en) * | 2003-07-21 | 2006-12-21 | Parekh Bipin S | Lithographic projection apparatus, gas purging method, device manufacturing method and purge gas supply system related application |
JP2005175016A (ja) * | 2003-12-08 | 2005-06-30 | Canon Inc | 基板保持装置およびそれを用いた露光装置ならびにデバイス製造方法 |
US7898642B2 (en) * | 2004-04-14 | 2011-03-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7481867B2 (en) * | 2004-06-16 | 2009-01-27 | Edwards Limited | Vacuum system for immersion photolithography |
US20060001851A1 (en) * | 2004-07-01 | 2006-01-05 | Grant Robert B | Immersion photolithography system |
US7701550B2 (en) * | 2004-08-19 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
SG188899A1 (en) * | 2004-09-17 | 2013-04-30 | Nikon Corp | Substrate holding device, exposure apparatus, and device manufacturing method |
US7248334B2 (en) * | 2004-12-07 | 2007-07-24 | Asml Netherlands B.V. | Sensor shield |
US7397533B2 (en) * | 2004-12-07 | 2008-07-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
KR101771334B1 (ko) * | 2004-12-15 | 2017-08-24 | 가부시키가이샤 니콘 | 기판 유지 장치, 노광 장치 및 디바이스 제조방법 |
EP1874459B1 (en) * | 2005-04-07 | 2015-10-14 | The Regents of The University of Michigan | High gas adsorption in a microporous metal-organic framework with open-metal sites |
US7433016B2 (en) * | 2005-05-03 | 2008-10-07 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7652746B2 (en) * | 2005-06-21 | 2010-01-26 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7468779B2 (en) * | 2005-06-28 | 2008-12-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4641469B2 (ja) | 2005-09-06 | 2011-03-02 | キヤノン株式会社 | 画像形成装置、画像形成装置の制御方法、プログラム |
US7420194B2 (en) * | 2005-12-27 | 2008-09-02 | Asml Netherlands B.V. | Lithographic apparatus and substrate edge seal |
US7446859B2 (en) * | 2006-01-27 | 2008-11-04 | International Business Machines Corporation | Apparatus and method for reducing contamination in immersion lithography |
US8027019B2 (en) * | 2006-03-28 | 2011-09-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2007266504A (ja) * | 2006-03-29 | 2007-10-11 | Canon Inc | 露光装置 |
US8253922B2 (en) * | 2006-11-03 | 2012-08-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography system using a sealed wafer bath |
-
2007
- 2007-06-01 US US11/806,662 patent/US8514365B2/en not_active Expired - Fee Related
-
2008
- 2008-05-26 JP JP2008136199A patent/JP4954139B2/ja not_active Expired - Fee Related
-
2012
- 2012-03-13 JP JP2012055739A patent/JP5286431B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20080297744A1 (en) | 2008-12-04 |
JP4954139B2 (ja) | 2012-06-13 |
JP2008300829A (ja) | 2008-12-11 |
JP2012114469A (ja) | 2012-06-14 |
US8514365B2 (en) | 2013-08-20 |
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