WO2010024641A3 - 신규한 열전 변환 재료 및 그 제조 방법과, 이를 이용한 열전 변환 소자 - Google Patents

신규한 열전 변환 재료 및 그 제조 방법과, 이를 이용한 열전 변환 소자 Download PDF

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WO2010024641A3
WO2010024641A3 PCT/KR2009/004883 KR2009004883W WO2010024641A3 WO 2010024641 A3 WO2010024641 A3 WO 2010024641A3 KR 2009004883 W KR2009004883 W KR 2009004883W WO 2010024641 A3 WO2010024641 A3 WO 2010024641A3
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thermoelectric
manufacture
new
same
thermoelectric material
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PCT/KR2009/004883
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English (en)
French (fr)
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WO2010024641A2 (ko
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박철희
손세희
권원종
홍승태
김태훈
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주식회사 엘지화학
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Priority to EP09810246.0A priority Critical patent/EP2320485B1/en
Priority to CN2009801080161A priority patent/CN101960627B/zh
Priority to JP2010549589A priority patent/JP5283713B2/ja
Publication of WO2010024641A2 publication Critical patent/WO2010024641A2/ko
Publication of WO2010024641A3 publication Critical patent/WO2010024641A3/ko
Priority to US12/900,240 priority patent/US8173097B2/en
Priority to US13/463,511 priority patent/US8535637B2/en
Priority to US14/014,088 priority patent/US20140000671A1/en

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    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
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    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/853—Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth
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    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
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    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
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    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

본 발명은 다음 화학식으로 표시되는 신규한 열전 변환 재료를 제공한다(Bi1-xCu1-yO1-zTe). 상기 화학식 1에서, 0≤x<1, 0≤y<1, 0≤z<1 및 x+y+z>0이다. 이 열전 변환 재료를 이용한 열전 변환 소자는 양호한 에너지 변환 효율을 나타낸다.
PCT/KR2009/004883 2008-08-29 2009-08-31 신규한 열전 변환 재료 및 그 제조 방법과, 이를 이용한 열전 변환 소자 WO2010024641A2 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
EP09810246.0A EP2320485B1 (en) 2008-08-29 2009-08-31 New thermoelectric material, method of manufacture thereof and thermoelectric component using the same
CN2009801080161A CN101960627B (zh) 2008-08-29 2009-08-31 新型热电转换材料及其制备方法,以及使用该热电转换材料的热电转换器件
JP2010549589A JP5283713B2 (ja) 2008-08-29 2009-08-31 新規な熱電変換材料及びその製造方法、並びにそれを用いた熱電変換素子
US12/900,240 US8173097B2 (en) 2008-08-29 2010-10-07 Thermoelectric conversion material and its manufacturing method, and thermoelectric conversion device using the same
US13/463,511 US8535637B2 (en) 2008-08-29 2012-05-03 Thermoelectric conversion material and its manufacturing method, and thermoelectric conversion device using the same
US14/014,088 US20140000671A1 (en) 2008-08-29 2013-08-29 Thermoelectric conversion material and its manufacturing method, and thermoelectric conversion device using the same

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
KR10-2008-0085240 2008-08-29
KR20080085240 2008-08-29
KR10-2008-0097779 2008-10-06
KR20080097779 2008-10-06
KR20080111557 2008-11-11
KR10-2008-0111557 2008-11-11

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/900,240 Continuation US8173097B2 (en) 2008-08-29 2010-10-07 Thermoelectric conversion material and its manufacturing method, and thermoelectric conversion device using the same

Publications (2)

Publication Number Publication Date
WO2010024641A2 WO2010024641A2 (ko) 2010-03-04
WO2010024641A3 true WO2010024641A3 (ko) 2010-07-01

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ID=41721647

Family Applications (3)

Application Number Title Priority Date Filing Date
PCT/KR2008/007041 WO2010024500A1 (en) 2008-08-28 2008-11-28 New compound semiconductor and producing method thereof, and solar cell and thermoelectric conversion element using the same
PCT/KR2009/004883 WO2010024641A2 (ko) 2008-08-29 2009-08-31 신규한 열전 변환 재료 및 그 제조 방법과, 이를 이용한 열전 변환 소자
PCT/KR2009/004872 WO2010024637A2 (ko) 2008-08-29 2009-08-31 신규한 화합물 반도체 및 그 제조 방법과, 이를 이용한 열전 변환 소자

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PCT/KR2008/007041 WO2010024500A1 (en) 2008-08-28 2008-11-28 New compound semiconductor and producing method thereof, and solar cell and thermoelectric conversion element using the same

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Application Number Title Priority Date Filing Date
PCT/KR2009/004872 WO2010024637A2 (ko) 2008-08-29 2009-08-31 신규한 화합물 반도체 및 그 제조 방법과, 이를 이용한 열전 변환 소자

Country Status (7)

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US (7) US8173097B2 (ko)
EP (3) EP2319082B1 (ko)
JP (4) JP5414700B2 (ko)
KR (3) KR101117847B1 (ko)
CN (6) CN103400932B (ko)
TW (1) TWI472487B (ko)
WO (3) WO2010024500A1 (ko)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2319082B1 (en) * 2008-08-29 2017-11-15 LG Chem, Ltd. New compound semiconductor and producing method thereof, and solar cell and thermoelectric conversion element using the same
US9660165B2 (en) 2008-08-29 2017-05-23 Lg Chem, Ltd. Thermoelectric conversion material and producing method thereof, and thermoelectric conversion element using the same
KR101114252B1 (ko) * 2010-05-21 2012-02-20 부경대학교 산학협력단 열전재료의 제조방법
CN102339946B (zh) * 2010-07-20 2014-06-18 中国科学院上海硅酸盐研究所 一种高性能热电复合材料及其制备方法
JP5774130B2 (ja) * 2011-04-28 2015-09-02 エルジー・ケム・リミテッド 新規な化合物半導体及びその活用
EP2703345B1 (en) * 2011-04-28 2018-07-25 LG Chem, Ltd. Novel semiconductor compound and usage thereof
EP2708502B1 (en) * 2011-05-13 2017-07-26 LG Chem, Ltd. Novel compound semiconductor and usage for same
WO2012157917A1 (ko) * 2011-05-13 2012-11-22 주식회사 엘지화학 신규한 화합물 반도체 및 그 활용
WO2012157904A1 (ko) * 2011-05-13 2012-11-22 주식회사 엘지화학 신규한 화합물 반도체 및 그 활용
KR101453036B1 (ko) * 2011-05-13 2014-10-22 주식회사 엘지화학 신규한 화합물 반도체 및 그 활용
WO2012157914A1 (ko) * 2011-05-13 2012-11-22 주식회사 엘지화학 신규한 화합물 반도체 및 그 활용
CN103050618B (zh) * 2011-10-17 2015-08-12 中国科学院福建物质结构研究所 一种热电材料及其制备方法
KR102001062B1 (ko) 2012-01-16 2019-10-01 삼성전자주식회사 나노복합체형 열전재료, 이를 포함하는 열전모듈과 열전장치
KR101323321B1 (ko) * 2012-02-10 2013-10-29 한국전기연구원 Ｓｂ가 도핑된 ＭｎＴｅ계 열전재료 및 그 제조방법
KR20130126035A (ko) * 2012-05-10 2013-11-20 삼성전자주식회사 왜곡된 전자 상태 밀도를 갖는 열전소재, 이를 포함하는 열전모듈과 열전 장치
KR101995917B1 (ko) 2012-05-14 2019-07-03 삼성전자주식회사 파워팩터 증대된 열전소재 및 그 제조 방법
FR2996355B1 (fr) * 2012-09-28 2016-04-29 Rhodia Operations Oxydes et sulfures mixtes de bismuth et cuivre pour application photovoltaique
KR101446424B1 (ko) * 2013-04-15 2014-10-30 서강대학교산학협력단 열전 변환 물질
CN103236493B (zh) * 2013-05-13 2017-10-24 中国科学院福建物质结构研究所 TmCuTe2化合物及其制备和用途
US9705060B2 (en) 2013-09-09 2017-07-11 Lg Chem, Ltd. Thermoelectric materials
KR101612494B1 (ko) * 2013-09-09 2016-04-14 주식회사 엘지화학 열전 재료
KR101612489B1 (ko) * 2013-09-27 2016-04-14 주식회사 엘지화학 신규한 화합물 반도체 및 그 활용
US9561959B2 (en) 2013-10-04 2017-02-07 Lg Chem, Ltd. Compound semiconductors and their applications
KR101629509B1 (ko) * 2013-10-17 2016-06-10 주식회사 엘지화학 열전 재료 및 그 제조 방법
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FR3019540A1 (fr) * 2014-04-04 2015-10-09 Rhodia Operations Oxydes et sulfures mixtes de bismuth et argent pour application photovoltaique
FR3019539B1 (fr) * 2014-04-04 2016-04-29 Rhodia Operations Oxydes et sulfures mixtes de bismuth et cuivre pour application photovoltaique
CN104674046B (zh) * 2015-02-03 2017-11-03 河南理工大学 一种BiCuζO热电材料的制备方法
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1131849A (ja) * 1997-05-15 1999-02-02 Yamaha Corp 熱電材料及びその製造方法
JPH11186616A (ja) * 1997-12-22 1999-07-09 Matsushita Electric Works Ltd 熱電変換素子及び熱電変換素子の製造方法
JP2001223392A (ja) * 1999-11-19 2001-08-17 Basf Ag 熱電気の活性材料およびこれを含んだ熱変換器
JP2002232026A (ja) * 2000-11-30 2002-08-16 Yamaha Corp 熱電材料、その製造方法及びペルチェモジュール
JP2008085309A (ja) * 2006-08-29 2008-04-10 Okano Electric Wire Co Ltd 熱電変換モジュールおよびその製造方法ならびに熱電変換モジュールに用いられる熱電変換材料

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4366336A (en) * 1980-10-16 1982-12-28 Chevron Research Company Age and heat stabilized photovoltaic cells
US4661071A (en) * 1984-04-03 1987-04-28 Denpac Corp. Vacuum sintered powder alloy dental prosthetic device and oven to form same
US5336558A (en) * 1991-06-24 1994-08-09 Minnesota Mining And Manufacturing Company Composite article comprising oriented microstructures
WO1994012833A1 (en) * 1992-11-27 1994-06-09 Pneumo Abex Corporation Thermoelectric device for heating and cooling air for human use
KR960006241B1 (ko) * 1993-11-20 1996-05-11 국방과학연구소 p-n 전이방지 특성을 갖는 Bi₂Te₃계 열전재료 조성물
JP3092463B2 (ja) * 1994-10-11 2000-09-25 ヤマハ株式会社 熱電材料及び熱電変換素子
US6458319B1 (en) * 1997-03-18 2002-10-01 California Institute Of Technology High performance P-type thermoelectric materials and methods of preparation
CA2307239A1 (en) * 1997-10-24 1999-05-06 Sumitomo Special Metals Co., Ltd. Thermoelectric transducing material and method of producing the same
EP1090398A4 (en) * 1998-06-18 2007-05-02 Ind Res Ltd CRITICAL DOPING OF HIGH CRITICAL TEMPERATURE SUPERCONDUCTORS FOR MAXIMUM CURRENT FLUX AND CURRENT CURRENT LAMINATION
JP2000261043A (ja) * 1999-03-10 2000-09-22 Sumitomo Special Metals Co Ltd 熱電変換材料とその製造方法
US6091014A (en) * 1999-03-16 2000-07-18 University Of Kentucky Research Foundation Thermoelectric materials based on intercalated layered metallic systems
US6251701B1 (en) * 2000-03-01 2001-06-26 The United States Of America As Represented By The United States Department Of Energy All-vapor processing of p-type tellurium-containing II-VI semiconductor and ohmic contacts thereof
US6384312B1 (en) * 2000-12-07 2002-05-07 International Business Machines Corporation Thermoelectric coolers with enhanced structured interfaces
WO2002084708A2 (en) * 2001-04-16 2002-10-24 Basol Bulent M Method of forming semiconductor compound film for fabrication of electronic device and film produced by same
US6660925B1 (en) * 2001-06-01 2003-12-09 Marlow Industries, Inc. Thermoelectric device having co-extruded P-type and N-type materials
US7166796B2 (en) * 2001-09-06 2007-01-23 Nicolaou Michael C Method for producing a device for direct thermoelectric energy conversion
JP3989486B2 (ja) * 2002-06-06 2007-10-10 古河電気工業株式会社 熱電素子モジュール及びその作製方法
JP2004288841A (ja) * 2003-03-20 2004-10-14 Rikogaku Shinkokai オキシカルコゲナイドおよび熱電材料
JP4670017B2 (ja) 2004-03-25 2011-04-13 独立行政法人産業技術総合研究所 熱電変換素子及び熱電変換モジュール
CN1278941C (zh) * 2004-12-08 2006-10-11 浙江大学 一种Bi2Te3纳米囊及其制备方法
JP2007158191A (ja) * 2005-12-07 2007-06-21 Toshiba Corp 熱電材料およびこの材料を用いた熱電変換素子
JP2007258200A (ja) * 2006-03-20 2007-10-04 Univ Nagoya 熱電変換材料及びそれを用いた熱電変換膜
JP4967772B2 (ja) * 2006-08-24 2012-07-04 住友化学株式会社 熱電変換材料およびその製造方法
WO2008028852A2 (de) * 2006-09-05 2008-03-13 Basf Se Dotierte bi-te-verbindungen für thermoelektrische generatoren und peltier-anordnungen
KR101008035B1 (ko) * 2007-06-14 2011-01-13 주식회사 엘지화학 신규한 화합물 반도체 물질 및 그 제조 방법과, 이를이용한 태양 전지
EP2319082B1 (en) * 2008-08-29 2017-11-15 LG Chem, Ltd. New compound semiconductor and producing method thereof, and solar cell and thermoelectric conversion element using the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1131849A (ja) * 1997-05-15 1999-02-02 Yamaha Corp 熱電材料及びその製造方法
JPH11186616A (ja) * 1997-12-22 1999-07-09 Matsushita Electric Works Ltd 熱電変換素子及び熱電変換素子の製造方法
JP2001223392A (ja) * 1999-11-19 2001-08-17 Basf Ag 熱電気の活性材料およびこれを含んだ熱変換器
JP2002232026A (ja) * 2000-11-30 2002-08-16 Yamaha Corp 熱電材料、その製造方法及びペルチェモジュール
JP2008085309A (ja) * 2006-08-29 2008-04-10 Okano Electric Wire Co Ltd 熱電変換モジュールおよびその製造方法ならびに熱電変換モジュールに用いられる熱電変換材料

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