WO2010024637A3 - 신규한 화합물 반도체 및 그 제조 방법과, 이를 이용한 열전 변환 소자 - Google Patents

신규한 화합물 반도체 및 그 제조 방법과, 이를 이용한 열전 변환 소자 Download PDF

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WO2010024637A3
WO2010024637A3 PCT/KR2009/004872 KR2009004872W WO2010024637A3 WO 2010024637 A3 WO2010024637 A3 WO 2010024637A3 KR 2009004872 W KR2009004872 W KR 2009004872W WO 2010024637 A3 WO2010024637 A3 WO 2010024637A3
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manufacture
same
semiconductive compound
thermoelectric component
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WO2010024637A2 (ko
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박철희
손세희
권원종
김태훈
홍승태
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주식회사 엘지화학
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Priority to JP2011500715A priority Critical patent/JP5462858B2/ja
Priority to CN2009801103604A priority patent/CN101977846B/zh
Priority to EP09810242.9A priority patent/EP2316793B1/en
Publication of WO2010024637A2 publication Critical patent/WO2010024637A2/ko
Publication of WO2010024637A3 publication Critical patent/WO2010024637A3/ko
Priority to US12/902,927 priority patent/US8029703B2/en

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Abstract

본 발명은 다음의 화학식으로 표시되는 신규한 화합물 반도체를 제공한다(Bi1-x-yLnxMyCuOTe). 상기 화학식에서, Ln은 란탄족 원소로서 La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb 및 Lu로 이루어진 군으로부터 선택된 어느 하나 또는 이들 중 2종 이상의 원소이고, M은 Ba, Sr, Ca, Mg, Cd, Hg, Sn, Pb, Mn, Ga, In, Tl, As 및 Sb로 이루어진 군으로부터 선택된 어느 하나 또는 이들 중 2종 이상의 원소이고, 0<x<1, 0≤y<1 및 0<x+y<1이다. 이 화합물 반도체는 종래의 화합물 반도체를 대체하거나 종래의 화합물 반도체에 더하여, 열전 변환 소자 등의 용도에 이용될 수 있다.
PCT/KR2009/004872 2008-08-29 2009-08-31 신규한 화합물 반도체 및 그 제조 방법과, 이를 이용한 열전 변환 소자 WO2010024637A2 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2011500715A JP5462858B2 (ja) 2008-08-29 2009-08-31 新規な化合物半導体及びその製造方法、並びにそれを用いた熱電変換素子
CN2009801103604A CN101977846B (zh) 2008-08-29 2009-08-31 化合物半导体及其制备方法以及使用该化合物半导体的热电转换器件
EP09810242.9A EP2316793B1 (en) 2008-08-29 2009-08-31 New semiconductive compound, method of manufacture thereof, and thermoelectric component using the same
US12/902,927 US8029703B2 (en) 2008-08-29 2010-10-12 Compound semiconductor and its manufacturing method, and thermoelectric conversion device using the same

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
KR20080085240 2008-08-29
KR10-2008-0085240 2008-08-29
KR10-2008-0097779 2008-10-06
KR20080097779 2008-10-06
KR20080111557 2008-11-11
KR10-2008-0111557 2008-11-11

Related Child Applications (1)

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US12/902,927 Continuation US8029703B2 (en) 2008-08-29 2010-10-12 Compound semiconductor and its manufacturing method, and thermoelectric conversion device using the same

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WO2010024637A2 WO2010024637A2 (ko) 2010-03-04
WO2010024637A3 true WO2010024637A3 (ko) 2010-07-01

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PCT/KR2008/007041 WO2010024500A1 (en) 2008-08-28 2008-11-28 New compound semiconductor and producing method thereof, and solar cell and thermoelectric conversion element using the same
PCT/KR2009/004883 WO2010024641A2 (ko) 2008-08-29 2009-08-31 신규한 열전 변환 재료 및 그 제조 방법과, 이를 이용한 열전 변환 소자
PCT/KR2009/004872 WO2010024637A2 (ko) 2008-08-29 2009-08-31 신규한 화합물 반도체 및 그 제조 방법과, 이를 이용한 열전 변환 소자

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PCT/KR2008/007041 WO2010024500A1 (en) 2008-08-28 2008-11-28 New compound semiconductor and producing method thereof, and solar cell and thermoelectric conversion element using the same
PCT/KR2009/004883 WO2010024641A2 (ko) 2008-08-29 2009-08-31 신규한 열전 변환 재료 및 그 제조 방법과, 이를 이용한 열전 변환 소자

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US (7) US8173097B2 (ko)
EP (3) EP2319082B1 (ko)
JP (4) JP5414700B2 (ko)
KR (3) KR101117847B1 (ko)
CN (6) CN103400932B (ko)
TW (1) TWI472487B (ko)
WO (3) WO2010024500A1 (ko)

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