FR2996355B1 - Oxydes et sulfures mixtes de bismuth et cuivre pour application photovoltaique - Google Patents

Oxydes et sulfures mixtes de bismuth et cuivre pour application photovoltaique

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Publication number
FR2996355B1
FR2996355B1 FR1202589A FR1202589A FR2996355B1 FR 2996355 B1 FR2996355 B1 FR 2996355B1 FR 1202589 A FR1202589 A FR 1202589A FR 1202589 A FR1202589 A FR 1202589A FR 2996355 B1 FR2996355 B1 FR 2996355B1
Authority
FR
France
Prior art keywords
sulfides
bismuth
copper
mixed oxides
photovoltaic application
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1202589A
Other languages
English (en)
Other versions
FR2996355A1 (fr
Inventor
Mercier Thierry Le
Philippe Barboux
Bahers Tangui Le
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Rhodia Operations SAS
Original Assignee
Centre National de la Recherche Scientifique CNRS
Rhodia Operations SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1202589A priority Critical patent/FR2996355B1/fr
Application filed by Centre National de la Recherche Scientifique CNRS, Rhodia Operations SAS filed Critical Centre National de la Recherche Scientifique CNRS
Priority to KR1020157010582A priority patent/KR20150065753A/ko
Priority to CN201380061780.4A priority patent/CN104813483A/zh
Priority to US14/429,474 priority patent/US20150221794A1/en
Priority to JP2015533628A priority patent/JP2016500624A/ja
Priority to EP13776438.7A priority patent/EP2901495A2/fr
Priority to PCT/EP2013/070350 priority patent/WO2014049172A2/fr
Publication of FR2996355A1 publication Critical patent/FR2996355A1/fr
Application granted granted Critical
Publication of FR2996355B1 publication Critical patent/FR2996355B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G29/00—Compounds of bismuth
    • C01G29/006—Compounds containing, besides bismuth, two or more other elements, with the exception of oxygen or hydrogen
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/002—Compounds containing, besides selenium or tellurium, more than one other element, with -O- and -OH not being considered as anions
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/007—Tellurides or selenides of metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02469—Group 12/16 materials
    • H01L21/02472—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0272—Selenium or tellurium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G29/00—Compounds of bismuth
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/50—Solid solutions
    • C01P2002/52—Solid solutions containing elements as dopants
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells
FR1202589A 2012-09-28 2012-09-28 Oxydes et sulfures mixtes de bismuth et cuivre pour application photovoltaique Expired - Fee Related FR2996355B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR1202589A FR2996355B1 (fr) 2012-09-28 2012-09-28 Oxydes et sulfures mixtes de bismuth et cuivre pour application photovoltaique
CN201380061780.4A CN104813483A (zh) 2012-09-28 2013-09-30 用于光电用途的混合的铋和铜的氧化物以及硫化物
US14/429,474 US20150221794A1 (en) 2012-09-28 2013-09-30 Mixed bismuth and copper oxides and sulphides for photovoltaic use
JP2015533628A JP2016500624A (ja) 2012-09-28 2013-09-30 光電池用途のための混合酸化および硫化ビスマスおよび銅
KR1020157010582A KR20150065753A (ko) 2012-09-28 2013-09-30 광기전 용도의, 비스무쓰, 구리 산화물 및 황화물의 혼합물
EP13776438.7A EP2901495A2 (fr) 2012-09-28 2013-09-30 Oxydes et sulfures mixtes de bismuth et cuivre pour application photovoltaïque
PCT/EP2013/070350 WO2014049172A2 (fr) 2012-09-28 2013-09-30 Oxydes et sulfures mixtes de bismuth et cuivre pour application photovoltaïque

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1202589A FR2996355B1 (fr) 2012-09-28 2012-09-28 Oxydes et sulfures mixtes de bismuth et cuivre pour application photovoltaique

Publications (2)

Publication Number Publication Date
FR2996355A1 FR2996355A1 (fr) 2014-04-04
FR2996355B1 true FR2996355B1 (fr) 2016-04-29

Family

ID=47878090

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1202589A Expired - Fee Related FR2996355B1 (fr) 2012-09-28 2012-09-28 Oxydes et sulfures mixtes de bismuth et cuivre pour application photovoltaique

Country Status (7)

Country Link
US (1) US20150221794A1 (fr)
EP (1) EP2901495A2 (fr)
JP (1) JP2016500624A (fr)
KR (1) KR20150065753A (fr)
CN (1) CN104813483A (fr)
FR (1) FR2996355B1 (fr)
WO (1) WO2014049172A2 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3019539B1 (fr) * 2014-04-04 2016-04-29 Rhodia Operations Oxydes et sulfures mixtes de bismuth et cuivre pour application photovoltaique
FR3019540A1 (fr) * 2014-04-04 2015-10-09 Rhodia Operations Oxydes et sulfures mixtes de bismuth et argent pour application photovoltaique
CN106744726A (zh) * 2017-01-05 2017-05-31 上海应用技术大学 一种具有层状结构BiOCuSe纳米片的制备方法
CN106745242A (zh) * 2017-01-05 2017-05-31 上海应用技术大学 一种采用浓碱水热法制备BiOCuS纳米片的方法
CN110763850B (zh) * 2019-11-08 2021-05-18 江南大学 一种非标记均相阴极光电化学检测17β-***的方法
CN114573026B (zh) * 2022-03-28 2024-03-22 金陵科技学院 一种铜铋硫纳米颗粒的制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19955788A1 (de) * 1999-11-19 2001-05-23 Basf Ag Thermoelektrisch aktive Materialien und diese enthaltende Generatoren
US6878871B2 (en) * 2002-09-05 2005-04-12 Nanosys, Inc. Nanostructure and nanocomposite based compositions and photovoltaic devices
JP5344731B2 (ja) * 2006-03-10 2013-11-20 独立行政法人産業技術総合研究所 可視光応答性の半導体素子および光電極、並びにそれを用いた光エネルギー変換システム
KR101008035B1 (ko) * 2007-06-14 2011-01-13 주식회사 엘지화학 신규한 화합물 반도체 물질 및 그 제조 방법과, 이를이용한 태양 전지
EP2319082B1 (fr) * 2008-08-29 2017-11-15 LG Chem, Ltd. Nouveau composé semi-conducteur et son procédé de fabrication, pile solaire et élément de conversion thermoélectrique l utilisant
US20120018828A1 (en) * 2010-07-23 2012-01-26 Stion Corporation Sodium Sputtering Doping Method for Large Scale CIGS Based Thin Film Photovoltaic Materials

Also Published As

Publication number Publication date
EP2901495A2 (fr) 2015-08-05
CN104813483A (zh) 2015-07-29
US20150221794A1 (en) 2015-08-06
FR2996355A1 (fr) 2014-04-04
WO2014049172A3 (fr) 2014-10-02
KR20150065753A (ko) 2015-06-15
JP2016500624A (ja) 2016-01-14
WO2014049172A2 (fr) 2014-04-03

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