FR3019539B1 - Oxydes et sulfures mixtes de bismuth et cuivre pour application photovoltaique - Google Patents

Oxydes et sulfures mixtes de bismuth et cuivre pour application photovoltaique

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Publication number
FR3019539B1
FR3019539B1 FR1400832A FR1400832A FR3019539B1 FR 3019539 B1 FR3019539 B1 FR 3019539B1 FR 1400832 A FR1400832 A FR 1400832A FR 1400832 A FR1400832 A FR 1400832A FR 3019539 B1 FR3019539 B1 FR 3019539B1
Authority
FR
France
Prior art keywords
sulfides
bismuth
copper
mixed oxides
photovoltaic application
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1400832A
Other languages
English (en)
Other versions
FR3019539A1 (fr
Inventor
Mercier Thierry Le
Philippe Barboux
Bahers Tangui Le
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Rhodia Operations SAS
Original Assignee
Centre National de la Recherche Scientifique CNRS
Rhodia Operations SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1400832A priority Critical patent/FR3019539B1/fr
Application filed by Centre National de la Recherche Scientifique CNRS, Rhodia Operations SAS filed Critical Centre National de la Recherche Scientifique CNRS
Priority to JP2017503074A priority patent/JP6563478B2/ja
Priority to EP15713968.4A priority patent/EP3126292A1/fr
Priority to CN201580018047.3A priority patent/CN106660821B/zh
Priority to KR1020167029118A priority patent/KR20160142320A/ko
Priority to US15/301,487 priority patent/US20170022072A1/en
Priority to PCT/EP2015/097023 priority patent/WO2015150591A1/fr
Publication of FR3019539A1 publication Critical patent/FR3019539A1/fr
Application granted granted Critical
Publication of FR3019539B1 publication Critical patent/FR3019539B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G29/00Compounds of bismuth
    • C01G29/006Compounds containing, besides bismuth, two or more other elements, with the exception of oxygen or hydrogen
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/547Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on sulfides or selenides or tellurides
    • CCHEMISTRY; METALLURGY
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    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G9/00Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20Light-sensitive devices
    • H01G9/2027Light-sensitive devices comprising an oxide semiconductor electrode
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264Inorganic materials
    • H01L31/032Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/50Agglomerated particles
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/60Particles characterised by their size
    • C01P2004/61Micrometer sized, i.e. from 1-100 micrometer
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/60Particles characterised by their size
    • C01P2004/62Submicrometer sized, i.e. from 0.1-1 micrometer
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/40Electric properties
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    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3281Copper oxides, cuprates or oxide-forming salts thereof, e.g. CuO or Cu2O
    • CCHEMISTRY; METALLURGY
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    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3284Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3289Noble metal oxides
    • C04B2235/3291Silver oxides
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3298Bismuth oxides, bismuthates or oxide forming salts thereof, e.g. zinc bismuthate
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/542Dye sensitized solar cells

Abstract

La présente invention concerne un matériau comprenant au moins un composé de formule Bi1-xMxCu1-y-ϵM'yOS1-zM"z, les procédés de préparation de ce matériau et leur utilisation à titre de semi-conducteur, notamment pour application photoélectrochimique ou photochimique, en particulier pour fournir un photocourant. L'invention concerne également les dispositifs photovoltaïques mettent en œuvre ces composés.
FR1400832A 2014-04-04 2014-04-04 Oxydes et sulfures mixtes de bismuth et cuivre pour application photovoltaique Expired - Fee Related FR3019539B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR1400832A FR3019539B1 (fr) 2014-04-04 2014-04-04 Oxydes et sulfures mixtes de bismuth et cuivre pour application photovoltaique
EP15713968.4A EP3126292A1 (fr) 2014-04-04 2015-04-03 Oxydes et sulfures mixtes de bismuth et cuivre pour application photovoltaïque
CN201580018047.3A CN106660821B (zh) 2014-04-04 2015-04-03 用于光电用途的混合的铋和铜的氧化物和硫化物
KR1020167029118A KR20160142320A (ko) 2014-04-04 2015-04-03 광전지 용도를 위한 비스무트 및 구리의 혼합 산화물 및 황화물
JP2017503074A JP6563478B2 (ja) 2014-04-04 2015-04-03 光電池用途のための混合酸化および硫化ビスマスおよび銅
US15/301,487 US20170022072A1 (en) 2014-04-04 2015-04-03 Mixed oxides and sulphides of bismuth and copper for photovoltaic use
PCT/EP2015/097023 WO2015150591A1 (fr) 2014-04-04 2015-04-03 Oxydes et sulfures mixtes de bismuth et cuivre pour application photovoltaïque

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1400832A FR3019539B1 (fr) 2014-04-04 2014-04-04 Oxydes et sulfures mixtes de bismuth et cuivre pour application photovoltaique

Publications (2)

Publication Number Publication Date
FR3019539A1 FR3019539A1 (fr) 2015-10-09
FR3019539B1 true FR3019539B1 (fr) 2016-04-29

Family

ID=51483460

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1400832A Expired - Fee Related FR3019539B1 (fr) 2014-04-04 2014-04-04 Oxydes et sulfures mixtes de bismuth et cuivre pour application photovoltaique

Country Status (7)

Country Link
US (1) US20170022072A1 (fr)
EP (1) EP3126292A1 (fr)
JP (1) JP6563478B2 (fr)
KR (1) KR20160142320A (fr)
CN (1) CN106660821B (fr)
FR (1) FR3019539B1 (fr)
WO (1) WO2015150591A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018004009A1 (fr) * 2016-06-30 2018-01-04 株式会社Flosfia SEMI-CONDUCTEUR À OXYDE DE TYPE p ET PROCÉDÉ POUR SA FABRICATION
CN108465473B (zh) * 2018-03-13 2021-01-26 清华大学 铋铜硫氧和/或其复合材料及其制备方法和用途、温度影响的光催化降解甲醛的设备和方法
CN112108156B (zh) * 2019-06-20 2023-05-02 天津城建大学 一种Ag纳米颗粒修饰的MgFe2O4纳米棒复合薄膜的制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100657949B1 (ko) * 2005-02-05 2006-12-14 삼성전자주식회사 원통형 연질 태양전지 및 그의 제조방법
EP2319082B1 (fr) * 2008-08-29 2017-11-15 LG Chem, Ltd. Nouveau composé semi-conducteur et son procédé de fabrication, pile solaire et élément de conversion thermoélectrique l utilisant
JP5959516B2 (ja) * 2010-08-18 2016-08-02 ライフ テクノロジーズ コーポレーション 電気化学的検出装置のためのマイクロウェルの化学コーティング法
FR2996355B1 (fr) * 2012-09-28 2016-04-29 Rhodia Operations Oxydes et sulfures mixtes de bismuth et cuivre pour application photovoltaique
FR3019540A1 (fr) * 2014-04-04 2015-10-09 Rhodia Operations Oxydes et sulfures mixtes de bismuth et argent pour application photovoltaique

Also Published As

Publication number Publication date
JP2017517473A (ja) 2017-06-29
KR20160142320A (ko) 2016-12-12
US20170022072A1 (en) 2017-01-26
EP3126292A1 (fr) 2017-02-08
CN106660821B (zh) 2018-09-18
JP6563478B2 (ja) 2019-08-21
FR3019539A1 (fr) 2015-10-09
CN106660821A (zh) 2017-05-10
WO2015150591A1 (fr) 2015-10-08

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