FR3019539B1 - Oxydes et sulfures mixtes de bismuth et cuivre pour application photovoltaique - Google Patents
Oxydes et sulfures mixtes de bismuth et cuivre pour application photovoltaiqueInfo
- Publication number
- FR3019539B1 FR3019539B1 FR1400832A FR1400832A FR3019539B1 FR 3019539 B1 FR3019539 B1 FR 3019539B1 FR 1400832 A FR1400832 A FR 1400832A FR 1400832 A FR1400832 A FR 1400832A FR 3019539 B1 FR3019539 B1 FR 3019539B1
- Authority
- FR
- France
- Prior art keywords
- sulfides
- bismuth
- copper
- mixed oxides
- photovoltaic application
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 150000003568 thioethers Chemical class 0.000 title 1
- 150000001875 compounds Chemical class 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G29/00—Compounds of bismuth
- C01G29/006—Compounds containing, besides bismuth, two or more other elements, with the exception of oxygen or hydrogen
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/547—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on sulfides or selenides or tellurides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/50—Agglomerated particles
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/40—Electric properties
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3281—Copper oxides, cuprates or oxide-forming salts thereof, e.g. CuO or Cu2O
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3284—Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3289—Noble metal oxides
- C04B2235/3291—Silver oxides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3298—Bismuth oxides, bismuthates or oxide forming salts thereof, e.g. zinc bismuthate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
Abstract
La présente invention concerne un matériau comprenant au moins un composé de formule Bi1-xMxCu1-y-ϵM'yOS1-zM"z, les procédés de préparation de ce matériau et leur utilisation à titre de semi-conducteur, notamment pour application photoélectrochimique ou photochimique, en particulier pour fournir un photocourant. L'invention concerne également les dispositifs photovoltaïques mettent en œuvre ces composés.
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1400832A FR3019539B1 (fr) | 2014-04-04 | 2014-04-04 | Oxydes et sulfures mixtes de bismuth et cuivre pour application photovoltaique |
EP15713968.4A EP3126292A1 (fr) | 2014-04-04 | 2015-04-03 | Oxydes et sulfures mixtes de bismuth et cuivre pour application photovoltaïque |
CN201580018047.3A CN106660821B (zh) | 2014-04-04 | 2015-04-03 | 用于光电用途的混合的铋和铜的氧化物和硫化物 |
KR1020167029118A KR20160142320A (ko) | 2014-04-04 | 2015-04-03 | 광전지 용도를 위한 비스무트 및 구리의 혼합 산화물 및 황화물 |
JP2017503074A JP6563478B2 (ja) | 2014-04-04 | 2015-04-03 | 光電池用途のための混合酸化および硫化ビスマスおよび銅 |
US15/301,487 US20170022072A1 (en) | 2014-04-04 | 2015-04-03 | Mixed oxides and sulphides of bismuth and copper for photovoltaic use |
PCT/EP2015/097023 WO2015150591A1 (fr) | 2014-04-04 | 2015-04-03 | Oxydes et sulfures mixtes de bismuth et cuivre pour application photovoltaïque |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1400832A FR3019539B1 (fr) | 2014-04-04 | 2014-04-04 | Oxydes et sulfures mixtes de bismuth et cuivre pour application photovoltaique |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3019539A1 FR3019539A1 (fr) | 2015-10-09 |
FR3019539B1 true FR3019539B1 (fr) | 2016-04-29 |
Family
ID=51483460
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1400832A Expired - Fee Related FR3019539B1 (fr) | 2014-04-04 | 2014-04-04 | Oxydes et sulfures mixtes de bismuth et cuivre pour application photovoltaique |
Country Status (7)
Country | Link |
---|---|
US (1) | US20170022072A1 (fr) |
EP (1) | EP3126292A1 (fr) |
JP (1) | JP6563478B2 (fr) |
KR (1) | KR20160142320A (fr) |
CN (1) | CN106660821B (fr) |
FR (1) | FR3019539B1 (fr) |
WO (1) | WO2015150591A1 (fr) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018004009A1 (fr) * | 2016-06-30 | 2018-01-04 | 株式会社Flosfia | SEMI-CONDUCTEUR À OXYDE DE TYPE p ET PROCÉDÉ POUR SA FABRICATION |
CN108465473B (zh) * | 2018-03-13 | 2021-01-26 | 清华大学 | 铋铜硫氧和/或其复合材料及其制备方法和用途、温度影响的光催化降解甲醛的设备和方法 |
CN112108156B (zh) * | 2019-06-20 | 2023-05-02 | 天津城建大学 | 一种Ag纳米颗粒修饰的MgFe2O4纳米棒复合薄膜的制备方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100657949B1 (ko) * | 2005-02-05 | 2006-12-14 | 삼성전자주식회사 | 원통형 연질 태양전지 및 그의 제조방법 |
EP2319082B1 (fr) * | 2008-08-29 | 2017-11-15 | LG Chem, Ltd. | Nouveau composé semi-conducteur et son procédé de fabrication, pile solaire et élément de conversion thermoélectrique l utilisant |
JP5959516B2 (ja) * | 2010-08-18 | 2016-08-02 | ライフ テクノロジーズ コーポレーション | 電気化学的検出装置のためのマイクロウェルの化学コーティング法 |
FR2996355B1 (fr) * | 2012-09-28 | 2016-04-29 | Rhodia Operations | Oxydes et sulfures mixtes de bismuth et cuivre pour application photovoltaique |
FR3019540A1 (fr) * | 2014-04-04 | 2015-10-09 | Rhodia Operations | Oxydes et sulfures mixtes de bismuth et argent pour application photovoltaique |
-
2014
- 2014-04-04 FR FR1400832A patent/FR3019539B1/fr not_active Expired - Fee Related
-
2015
- 2015-04-03 WO PCT/EP2015/097023 patent/WO2015150591A1/fr active Application Filing
- 2015-04-03 US US15/301,487 patent/US20170022072A1/en not_active Abandoned
- 2015-04-03 KR KR1020167029118A patent/KR20160142320A/ko not_active Application Discontinuation
- 2015-04-03 EP EP15713968.4A patent/EP3126292A1/fr not_active Withdrawn
- 2015-04-03 CN CN201580018047.3A patent/CN106660821B/zh not_active Expired - Fee Related
- 2015-04-03 JP JP2017503074A patent/JP6563478B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2017517473A (ja) | 2017-06-29 |
KR20160142320A (ko) | 2016-12-12 |
US20170022072A1 (en) | 2017-01-26 |
EP3126292A1 (fr) | 2017-02-08 |
CN106660821B (zh) | 2018-09-18 |
JP6563478B2 (ja) | 2019-08-21 |
FR3019539A1 (fr) | 2015-10-09 |
CN106660821A (zh) | 2017-05-10 |
WO2015150591A1 (fr) | 2015-10-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
MD3464249T2 (ro) | Derivați carbonucleozidici substituiţi utili în calitate de agenți anticanceroşi | |
MX2021002978A (es) | Lactamas biciclicas y metodos de uso de las mismas. | |
PH12017501413A1 (en) | Substituted nucleoside derivatives useful as anticancer agents | |
CL2015003491A1 (es) | Compuestos químicos. | |
EA201792548A1 (ru) | 4-гидрокси-3-(гетероарил)пиридин-2-оновые агонисты apj для применения в лечении сердечно-сосудистых заболеваний | |
MX2016002185A (es) | Formulacion combinada de dos compuestos antivirales. | |
MX2018004344A (es) | 2,4-dihidroxi-nicotinamidas como agonistas del recepor de apelina (apj). | |
UA124329C2 (uk) | Піримідинілоксибензольні похідні як гербіциди | |
TR201900038T4 (tr) | GPR6'nın tetrahidropiridopirazin modülatörleri. | |
MX2017014035A (es) | Formas solidas novedosas. | |
MX2016011897A (es) | Composiciones de compuestos selenoorganicos y metodos de uso de los mismos. | |
PH12017500810A1 (en) | Substituted 2,4 diamino-quinoline as new anticancer agents | |
MX2021004845A (es) | Grados de liquidos y solidos fundibles de peroxidos protegidos frente a la reticulacion prematura. | |
MX2016005993A (es) | Anfifilos biscationicos y triscationicos como agentes antimicrobianos. | |
MA44020B1 (fr) | Composés antitumoraux | |
MA49374A (fr) | Composés hétéroaromatiques utilisés en tant qu'inhibiteurs de vanine | |
SG10201805896SA (en) | PPARγ AGONISTS FOR TREATMENT OF MULTIPLE SCLEROSIS | |
MY171768A (en) | Process and composition for inhibiting the polymerization of cyclopentadiene compounds | |
EA201591645A1 (ru) | Hантагонисты, имеющие феноксипиперидиновое ядро в структуре | |
MA54378A (fr) | Composés hétéroaromatiques utilisés en tant qu'inhibiteurs de vanine | |
ZA202001295B (en) | Thiazolopyridine derivatives as adenosine receptor antagonists | |
FR3033701B1 (fr) | Nouvelles compositions antivirales pour le traitement de la grippe | |
FR3019539B1 (fr) | Oxydes et sulfures mixtes de bismuth et cuivre pour application photovoltaique | |
MX2015015924A (es) | Compuestos novedosos con actividades triples de trombolisis, anti-trombotica y depuracion de radicales y sintesis, nano-estructura y uso de los mismos. | |
MX2022007670A (es) | Compuestos antihelminticos que comprenden una estructura de quinolina. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 2 |
|
PLFP | Fee payment |
Year of fee payment: 3 |
|
PLFP | Fee payment |
Year of fee payment: 4 |
|
PLFP | Fee payment |
Year of fee payment: 5 |
|
PLFP | Fee payment |
Year of fee payment: 7 |
|
ST | Notification of lapse |
Effective date: 20211205 |