KR20070072421A - 리소그래피 장치 및 디바이스 제조방법 - Google Patents
리소그래피 장치 및 디바이스 제조방법 Download PDFInfo
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- KR20070072421A KR20070072421A KR1020060138984A KR20060138984A KR20070072421A KR 20070072421 A KR20070072421 A KR 20070072421A KR 1020060138984 A KR1020060138984 A KR 1020060138984A KR 20060138984 A KR20060138984 A KR 20060138984A KR 20070072421 A KR20070072421 A KR 20070072421A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
- G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
- G03F7/70725—Stages control
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
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Abstract
Description
Claims (27)
- 리소그래피 장치에 있어서,기판을 지지하도록 구성되는 기판테이블;모듈레이팅된 방사선 빔을 기판 상에 투영하도록 구성되는 투영시스템;노광시 상기 투영시스템과 기판 사이의 영역에 액체를 제공하도록 구성되는 액체공급시스템;노광시 상기 기판의 반경방향 외측에 위치되고, 상기 기판과 실질적으로 인접하고 기판 레벨에 있는 상기 투영시스템과 마주하는 표면을 제공하도록 구성되는 상기 기판테이블로부터 물리적으로 분리되는 커버 플레이트; 및상기 커버 플레이트 일부의 온도를 제어함으로써 대응되는 타겟 온도로부터 상기 기판테이블의 일부의 온도 편차를 저감시키도록 구성되는 기판테이블 온도안정화 디바이스를 포함하는 것을 특징으로 하는 리소그래피 장치.
- 제 1 항에 있어서,상기 온도 안정화 디바이스는 상기 커버 플레이트의 일 부분에 열을 가하도록 구성되는 가열 요소나, 상기 커버 플레이트의 일 부분으로부터 열을 추출하도록 구성되는 냉각 요소를 포함하거나, 또는 상기 가열 요소와 상기 냉각 요소 둘 모두를 포함하는 것을 특징으로 하는 리소그래피 장치.
- 제 1 항에 있어서,상기 온도 안정화 디바이스는 상기 커버 플레이트 내에 매입되는 채널들의 네트워크를 포함하고, 또한 대응되는 타겟 온도로부터 상기 기판테이블의 일부의 온도 편차를 저감시키기 위하여, 상기 채널들이 네트워크 내의 열 교환기의 온도, 압력 또는 그 둘 모두를 제어하도록 구성되는 제어기를 포함하는 것을 특징으로 하는 리소그래피 장치.
- 제 1 항에 있어서,상기 온도 안정화 디바이스는 가열 요소를 포함하며, 또한 대응되는 타겟 온도로부터 상기 기판테이블의 일부의 온도 편차를 저감시키기 위하여, 상기 가열 요소로부터 출력되는 열을 제어하도록 구성되는 제어기를 포함하는 것을 특징으로 하는 리소그래피 장치.
- 제 4 항에 있어서,상기 가열 요소는 타겟 온도의 영역에서 온도 유도 위상 전이(temperature induced phase transition)를 겪는 재료를 포함하고, 상기 위상 전이는 상기 재료가 상기 전이 온도 아래의 상대적으로 높은 가열 출력을 생성하는 상태로부터 상기 전이 온도 위의 상대적으로 낮은 가열 출력을 생성하는 상태로 변화되도록 하는 것을 특징으로 하는 리소그래피 장치.
- 제 5 항에 있어서,상기 기판테이블 온도 안정화 디바이스는 위상 전이를 겪는 상기 재료를 통해 전류를 통과시키도록 구성되고, 상기 위상 전이는 가열 요소 재료를 상기 전이 온도 아래의 상대적으로 낮은 저항성(resistivity)의 상태로부터 상기 전이 온도 위의 상대적으로 높은 저항성의 상태로 변화시키도록 야기하는 것을 특징으로 하는 리소그래피 장치.
- 제 5 항에 있어서,상기 기판테이블 온도 안정화 디바이스는 위상 전이를 겪는 재료에 가변 자기장을 적용시키도록 구성되고, 상기 위상 전이는 상기 가열 요소를 상기 전이 온도 아래의 자기적으로 이력현상적인(hysteretic) 상태로부터 상기 전이 온도 위의 자기적으로 비-이력현상적인 상태로 변화시키도록 야기하는 것을 특징으로 하는 리소그래피 장치.
- 제 1 항에 있어서,상기 기판 테이블, 상기 커버 플레이트, 또는 둘 모두의 일 부분의 온도를 측정하도록 구성되는 온도 센서를 더 포함하고, 상기 기판테이블 온도 안정화 디바이스는 상기 온도 센서로부터의 온도 판독치(reading)를 사용하여 대응되는 타겟 온도로부터의 상기 기판테이블의 일부의 온도 편차를 저감시키도록 구성되는 것을 특징으로 하는 리소그래피 장치.
- 제 1 항에 있어서,상기 기판테이블과 상기 기판 사이에 위치되고 상기 기판을 지지하도록 구성되는 기판 홀더를 더 포함하는 것을 특징으로 하는 리소그래피 장치.
- 제 9 항에 있어서,열전도성 커플링 매체는 상기 기판테이블 및 상기 커버 플레이트, 상기 기판 홀더 또는 둘 모두의 사이에 제공되는 것을 특징으로 하는 리소그래피 장치.
- 제 10 항에 있어서,상기 열전도성 커플링 매체는 유체, 인듐, 또는 둘 모두인 것을 특징으로 하는 리소그래피 장치.
- 제 9 항에 있어서,상기 기판 홀더는 SiSiC를 포함하는 재료로부터 형성되는 것을 특징으로 하는 리소그래피 장치.
- 디바이스 제조방법에 있어서,모듈레이팅된 방사선 빔을 액체를 통해 기판테이블 상에서 유지되는 기판 상으로 투영하는 단계; 및커버 플레이트의 일부의 온도를 제어함으로써 대응되는 타겟 온도로부터 상기 기판테이블의 일부의 온도 편차를 저감시키는 단계를 포함하며,상기 커버 플레이트는 상기 모듈레이팅된 방사선 빔의 투영시 상기 기판의 반경방향 외측에 있으며, 상기 기판과 실질적으로 인접하고 기판 레벨에 있는 표면을 갖는 상기 기판테이블로부터 물리적으로 분리되는 것을 특징으로 하는 리소그래피 장치.
- 리소그래피 장치에 있어서,기판을 지지하도록 구성된 기판테이블;모듈레이팅된 방사선 빔을 기판 상으로 투영하도록 구성된 투영시스템;노광시 상기 투영시스템과 기판 사이의 영역에 액체를 제공하도록 구성된 액체공급시스템;노광시 상기 기판의 반경방향 외측에 위치되고, 상기 기판과 실질적으로 인접하고 기판 레벨에 있는 상기 투영시스템과 마주하는 표면을 제공하도록 구성되는 상기 기판테이블로부터 물리적으로 분리되는 커버 플레이트; 및상기 커버 플레이트에 의해 상기 기판테이블의 열적 실딩(shielding)을 제공하기 위하여 상기 커버 플레이트와 상기 기판테이블 간의 열전달을 저감시키도록 구성되는 열 절연체를 포함하는 것을 특징으로 하는 리소그래피 장치.
- 제 14 항에 있어서,상기 열 절연체는 상기 커버 플레이트가 장착되는 낮은 열 전도성 버얼(burl)을 포함하는 것을 특징으로 하는 리소그래피 장치.
- 제 15 항에 있어서,상기 낮은 열 전도성 버얼들은 낮은 열 전도성, 커버 플레이트와의 최소 접촉 영역, 상기 기판테이블과의 최소 접촉 영역, 또는 이들의 여하한의 조합을 갖도록 구성되는 것을 특징으로 하는 리소그래피 장치.
- 디바이스 제조방법에 있어서,액체를 통해 기판테이블 상에서 유지되는 기판 상으로 모듈레이팅된 방사선 빔을 투영하는 단계; 및커버 플레이트와 기판테이블 간의 열전달을 저감시켜 상기 커버 플레이트에 의해 상기 기판의 열적 실딩이 가능해 지도록 상기 커버 플레이트를 열적으로 절연시키는 단계를 포함하는 디바이스 제조방법이 제공되며,상기 커버 플레이트는 상기 모듈레이팅된 방사선 빔의 투영시 상기 기판의 반경방향 외측에 있으며, 상기 기판과 실질적으로 인접하고 기판 레벨에 있는 표면을 갖는 상기 기판테이블로부터 물리적으로 분리되는 것을 특징으로 하는 디바이스 제조방법.
- 리소그래피 장치에 있어서,기판을 지지하도록 구성된 기판테이블;모듈레이팅된 방사선 빔을 기판 상으로 투영하도록 구성된 투영시스템;상기 기판테이블의 일 부분의 위치를 결정하도록 구성된 측정시스템;상기 기판테이블의 왜곡과 관련한 데이터를 제공하도록 구성되는 기판테이블 왜곡 결정 디바이스; 및상기 측정시스템에 의하여 측정되는 상기 기판테이블의 일 부분의 위치 및 상기 기판테이블 왜곡 결정 디바이스에 의하여 제공되는 상기 기판테이블의 왜곡과 관련한 데이터를 기준으로 하여 상기 투영시스템에 대한 상기 기판의 위치를 제어하도록 구성되는 기판 위치 제어기를 포함하는 것을 특징으로 하는 리소그래피 장치.
- 제 18 항에 있어서,상기 측정시스템은:상기 기판테이블의 측방향 측면 상에 장착되는 실질적으로 평면인 리플렉터;상기 리플렉터 표면 상의 국부화된 영역 상으로 방사선을 지향시키도록 구성되는 방사선 소스; 및상기 리플렉터의 국부화된 영역으로부터 다시 반사되는 방사선을 캡처링하고, 그로부터 상기 리플렉터 표면과 기준 지점간의 거리를 결정하도록 구성된 방사선 디텍터를 포함하고,상기 기판테이블 왜곡 결정 디바이스는 상기 기판테이블의 왜곡에 의하여 야 기되는 상기 리플렉터의 표면 프로파일과 관련된 데이터를 제공하는 것을 특징으로 하는 리소그래피 장치.
- 제 19 항에 있어서,상기 기판테이블 왜곡 결정 디바이스는 상기 기판테이블, 상기 리플렉터, 또는 이들 모두의 일부의 열-유도 왜곡을 측정하도록 구성된 것을 특징으로 하는 리소그래피 장치.
- 제 20 항에 있어서,상기 기판테이블 왜곡 결정 디바이스는 방사선 소스들과 방사선 디텍터들의 복수의 쌍을 포함하고, 그 각각은 상기 리플렉터 표면의 상이한 부분과 대응 기준 지점간의 거리를 결정하여 상기 리플렉터의 표면 프로파일과 관련된 데이터를 유도하도록 구성되는 것을 특징으로 하는 리소그래피 장치.
- 제 19 항에 있어서,상기 기판테이블 왜곡 결정 디바이스는 예측적인 이론적 모델에 기초하여 상기 리플렉터의 표면 프로파일을 추정(estimate)하도록 구성되는 것을 특징으로 하는 리소그래피 장치.
- 제 19 항에 있어서,상기 기판테이블 왜곡 결정 디바이스는 캘리브레이션 데이터 메모리에 저장되는 캘리브레이션 데이터에 기초하여 표면 프로파일을 추정하도록 구성되는 것을 특징으로 하는 리소그래피 장치.
- 디바이스 제조방법에 있어서,모듈레이팅된 방사선 빔을 기판테이블에 의해 유지되는 기판 상으로 투영하는 단계;상기 기판테이블의 일 부분의 위치를 결정하는 단계; 및상기 기판테이블의 일 부분의 결정된 위치 및 상기 기판테이블의 왜곡과 관련한 데이터를 기준으로 하여 상기 모듈레이팅된 방사선 빔을 투영하는데 사용되는 투영시스템에 대한 상기 기판의 위치를 제어하는 단계를 포함하는 것을 특징으로 하는 디바이스 제조방법.
- 리소그래피 장치의 기판테이블 리플렉터의 표면 프로파일을 매핑(mapping)하는 방법에 있어서,기판을 지지하도록 구성된 기판테이블의 제 1 측방향 측면 상에 장착되는 실질적으로 평면이며, 제 1 축선과 평행한 법선을 갖는 제 1 리플렉터를 제공하는 단계;상기 기판테이블의 제 2 측방향 측면 상에 장착되며, 상기 제 1 축선에 대해 평행하지 않은(non-parallel) 제 2 축선과 평행한 법선을 갖는 실질적으로 평면인 제 2 리플렉터를 제공하는 단계; 및상기 기판테이블을 상기 제 1 축선과 평행하게 이동시키는 한편, 상기 제 2 리플렉터의 표면으로부터 기준 프레임의 기준 지점까지의 직각방향의 거리를 측정하는 단계를 포함하는 것을 특징으로 하는 방법.
- 제 25 항에 있어서,상기 기판테이블을 상기 제 2 축선과 평행하게 이동시키는 한편, 상기 제 1 리플렉터의 표면으로부터 기준 프레임의 기준 지점까지의 직각방향의 거리를 측정하는 단계를 더 포함하는 것을 특징으로 하는 방법.
- 디바이스 제조방법에 있어서,제 1 축선과 평행하게 기판테이블을 이동시키는 한편, 상기 제 1 축선과 실질적으로 직교하는 제 2 축선과 실질적으로 평행한 방향으로 리플렉터 표면으로부터 기준 지점까지의 거리를 측정함으로써 상기 기판테이블의 리플렉터의 표면 프로파일을 매핑하는 단계;모듈레이팅된 방사선 빔을 기판 상으로 투영하는 단계; 및상기 기판의 상이한 타겟 영역들을 노광하도록 상기 모듈레이팅된 방사선 빔을 투영하는데 사용되는 투영시스템에 대해 상기 기판을 이동시키는 단계를 포함하며, 상기 이동은 상기 기판의 위치를 기준으로 하여 제어되고, 상기 위치가 상기 기판테이블 리플렉터의 표면 프로파일 및 기준 위치로부터의 상기 기판테이블 리플 렉터의 분리(separation)의 측정을 기준으로 하여 결정되는 것을 특징으로 하는 디바이스 제조방법.
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