JP5033866B2 - リソグラフィ装置 - Google Patents
リソグラフィ装置 Download PDFInfo
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- JP5033866B2 JP5033866B2 JP2009287652A JP2009287652A JP5033866B2 JP 5033866 B2 JP5033866 B2 JP 5033866B2 JP 2009287652 A JP2009287652 A JP 2009287652A JP 2009287652 A JP2009287652 A JP 2009287652A JP 5033866 B2 JP5033866 B2 JP 5033866B2
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
- G03F7/70725—Stages control
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
- G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Public Health (AREA)
- Epidemiology (AREA)
- Environmental & Geological Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
Claims (15)
- 液浸露光中に基板を支持するように構成された基板テーブルと、
前記基板テーブルから物理的に分離し、露光中に前記基板の半径方向外側に位置し、前記基板に実質的に隣接し且つ同一高さにある、投影システムに対向する表面を提供するカバープレートと、を備え、
前記カバープレートと前記基板テーブルとの間に断熱材が設けられている、リソグラフィ装置。 - 前記断熱材は、前記基板テーブル及び/又は前記カバープレートに適用された反射性コーティング、及び/又は、複数の節を備える、請求項1に記載のリソグラフィ装置。
- 前記反射性コーティングは、前記基板テーブルと前記カバープレートとの間の相対的な熱交換を減少させる、請求項2に記載のリソグラフィ装置。
- 前記基板テーブルと前記基板との間に位置し、前記基板を支持するように設けられた基板ホルダをさらに備える、請求項1乃至請求項3のいずれか一項に記載のリソグラフィ装置。
- 前記基板ホルダがSiSiCを含む材料から形成される、請求項4に記載のリソグラフィ装置。
- 熱伝導性結合媒体が、前記基板と前記基板ホルダ、前記基板ホルダと前記基板テーブル及び/又は前記カバープレートと前記基板テーブルとの間に設けられるように構成される、請求項4又は請求項5のいずれかに記載のリソグラフィ装置。
- 前記熱伝導性結合媒体が流体及び/又はインジウムである、請求項6に記載のリソグラフィ装置。
- 前記基板テーブル、前記基板テーブルに機械的及び/又は熱的に接触するコンポーネント又はこれら両方の温度をある範囲内のターゲット温度内に維持するように構成された温度安定化デバイスをさらに備える、請求項1乃至請求項7のいずれか一項に記載のリソグラフィ装置。
- 前記温度安定化デバイスが、前記カバープレートに埋め込まれた流路のネットワークと、対応するターゲット温度からの前記基板テーブル、前記基板ホルダ及び/又は前記カバープレートの一部の温度偏差を減少させるために、前記流路のネットワーク内の熱交換流体の温度及び/又は圧力を制御するように設けられたコントローラとを備え、及び/又は、
前記温度安定化デバイスが、加熱要素と、対応するターゲット温度からの前記基板テーブル、前記基板ホルダ及び/又は前記カバープレートの一部の温度偏差を減少させるために、前記加熱要素からの熱出力を制御するように構成されたコントローラとを備える、請求項8に記載のリソグラフィ装置。 - 前記加熱要素は、前記カバープレート内に埋め込まれるか又は前記カバープレートの表面に取り付けられているか、又は、ターゲット温度の領域で温度により生じる相転移を受ける材料を備え、前記相転移が前記材料を、転移温度より低い比較的高い加熱出力を生成する状態から、転移温度より高い比較的低い加熱出力を生成する状態へと変化させる、請求項9に記載のリソグラフィ装置。
- 前記加熱要素が転移温度より低い場合のみ前記加熱要素が磁気ヒステリシスによって前記基板テーブルに熱を与えるように、変動する磁界を前記加熱要素に与えるように構成されたコントローラ及びエレクトロマグネットをさらに備える、請求項9又は請求項10のいずれかに記載のリソグラフィ装置。
- 前記基板テーブル、前記基板ホルダ及び/又は前記カバープレートの一部の温度を測定するように構成された温度センサをさらに備える、請求項8乃至請求項10のいずれか一項に記載のリソグラフィ装置。
- 前記基板テーブル温度安定化デバイスが、前記温度センサからの温度読み取り値を使用して、対応するターゲット温度からの前記基板テーブルの一部の温度偏差を減少させるように構成される、請求項12に記載のリソグラフィ装置。
- 前記温度センサは、前記基板テーブル及び/又は前記カバープレートに固定されるか、前記基板テーブル及び/又は前記カバープレート内に埋め込まれるか又は前記基板テーブル及び/又は前記カバープレートに隣接して位置決めされる、請求項12又は請求項13のいずれかに記載のリソグラフィ装置。
- 前記温度センサの読み取り値と対応するターゲット温度との間の差を減少させるために前記加熱要素及び/又は冷却要素を調節するためのフィードバックループをさらに備える、請求項12乃至請求項14のいずれか一項に記載のリソグラフィ装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/321,461 US7649611B2 (en) | 2005-12-30 | 2005-12-30 | Lithographic apparatus and device manufacturing method |
US11/321,461 | 2005-12-30 |
Related Parent Applications (1)
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JP2006345103A Division JP4468350B2 (ja) | 2005-12-30 | 2006-12-22 | リソグラフィ装置およびデバイス製造方法 |
Related Child Applications (1)
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JP2012071254A Division JP5571727B2 (ja) | 2005-12-30 | 2012-03-27 | リソグラフィ装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2010068003A JP2010068003A (ja) | 2010-03-25 |
JP2010068003A5 JP2010068003A5 (ja) | 2011-12-01 |
JP5033866B2 true JP5033866B2 (ja) | 2012-09-26 |
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JP2006345103A Active JP4468350B2 (ja) | 2005-12-30 | 2006-12-22 | リソグラフィ装置およびデバイス製造方法 |
JP2009287652A Active JP5033866B2 (ja) | 2005-12-30 | 2009-12-18 | リソグラフィ装置 |
JP2012071254A Active JP5571727B2 (ja) | 2005-12-30 | 2012-03-27 | リソグラフィ装置 |
JP2013257890A Active JP5916696B2 (ja) | 2005-12-30 | 2013-12-13 | リソグラフィ装置およびデバイス製造方法 |
JP2015075844A Active JP6021986B2 (ja) | 2005-12-30 | 2015-04-02 | リソグラフィ装置およびデバイス製造方法 |
JP2016097656A Active JP6310002B2 (ja) | 2005-12-30 | 2016-05-16 | リソグラフィ装置およびデバイス製造方法 |
JP2017129094A Pending JP2017173856A (ja) | 2005-12-30 | 2017-06-30 | リソグラフィ装置およびデバイス製造方法 |
JP2018223275A Active JP7072493B2 (ja) | 2005-12-30 | 2018-11-29 | リソグラフィ装置およびデバイス製造方法 |
JP2020073773A Active JP7193499B2 (ja) | 2005-12-30 | 2020-04-17 | リソグラフィ装置およびデバイス製造方法 |
JP2021131175A Active JP7455783B2 (ja) | 2005-12-30 | 2021-08-11 | リソグラフィ装置およびデバイス製造方法 |
JP2022162875A Active JP7443454B2 (ja) | 2005-12-30 | 2022-10-11 | リソグラフィ装置およびデバイス製造方法 |
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JP2006345103A Active JP4468350B2 (ja) | 2005-12-30 | 2006-12-22 | リソグラフィ装置およびデバイス製造方法 |
Family Applications After (9)
Application Number | Title | Priority Date | Filing Date |
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JP2012071254A Active JP5571727B2 (ja) | 2005-12-30 | 2012-03-27 | リソグラフィ装置 |
JP2013257890A Active JP5916696B2 (ja) | 2005-12-30 | 2013-12-13 | リソグラフィ装置およびデバイス製造方法 |
JP2015075844A Active JP6021986B2 (ja) | 2005-12-30 | 2015-04-02 | リソグラフィ装置およびデバイス製造方法 |
JP2016097656A Active JP6310002B2 (ja) | 2005-12-30 | 2016-05-16 | リソグラフィ装置およびデバイス製造方法 |
JP2017129094A Pending JP2017173856A (ja) | 2005-12-30 | 2017-06-30 | リソグラフィ装置およびデバイス製造方法 |
JP2018223275A Active JP7072493B2 (ja) | 2005-12-30 | 2018-11-29 | リソグラフィ装置およびデバイス製造方法 |
JP2020073773A Active JP7193499B2 (ja) | 2005-12-30 | 2020-04-17 | リソグラフィ装置およびデバイス製造方法 |
JP2021131175A Active JP7455783B2 (ja) | 2005-12-30 | 2021-08-11 | リソグラフィ装置およびデバイス製造方法 |
JP2022162875A Active JP7443454B2 (ja) | 2005-12-30 | 2022-10-11 | リソグラフィ装置およびデバイス製造方法 |
Country Status (7)
Country | Link |
---|---|
US (10) | US7649611B2 (ja) |
EP (2) | EP1804122B1 (ja) |
JP (11) | JP4468350B2 (ja) |
KR (2) | KR100816837B1 (ja) |
CN (2) | CN101893827B (ja) |
SG (1) | SG133580A1 (ja) |
TW (2) | TWI443478B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2019032568A (ja) * | 2005-12-30 | 2019-02-28 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置およびデバイス製造方法 |
Families Citing this family (58)
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SE527934C2 (sv) * | 2004-06-03 | 2006-07-11 | Alfa Laval Corp Ab | En anordning och ett förfarande för rening av en gas |
US7972761B2 (en) * | 2006-08-04 | 2011-07-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist materials and photolithography process |
EP1965414A4 (en) * | 2005-12-06 | 2010-08-25 | Nikon Corp | EXPOSURE METHOD, EXPOSURE DEVICE AND METHOD FOR MANUFACTURING COMPONENTS |
US8045134B2 (en) * | 2006-03-13 | 2011-10-25 | Asml Netherlands B.V. | Lithographic apparatus, control system and device manufacturing method |
US7791709B2 (en) | 2006-12-08 | 2010-09-07 | Asml Netherlands B.V. | Substrate support and lithographic process |
US20080137055A1 (en) * | 2006-12-08 | 2008-06-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8760621B2 (en) * | 2007-03-12 | 2014-06-24 | Asml Netherlands B.V. | Lithographic apparatus and method |
JP5524067B2 (ja) * | 2007-10-09 | 2014-06-18 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 光学素子の温度制御装置 |
JP5369443B2 (ja) | 2008-02-05 | 2013-12-18 | 株式会社ニコン | ステージ装置、露光装置、露光方法、及びデバイス製造方法 |
NL1036835A1 (nl) * | 2008-05-08 | 2009-11-11 | Asml Netherlands Bv | Lithographic Apparatus and Method. |
JP2010118527A (ja) * | 2008-11-13 | 2010-05-27 | Canon Inc | 露光装置、およびデバイス製造方法 |
EP2202581B1 (en) * | 2008-12-10 | 2014-10-01 | ASML Netherlands BV | Lithographic apparatus and positioning apparatus |
NL2004453A (en) * | 2009-04-24 | 2010-10-26 | Asml Netherlands Bv | Lithographic apparatus having a substrate support with open cell plastic foam parts. |
NL2005244A (en) * | 2009-09-22 | 2011-03-23 | Asml Netherlands Bv | Support or table for lithographic apparatus, method of manufacturing such support or table and lithographic apparatus comprising such support or table. |
JP2011192991A (ja) | 2010-03-12 | 2011-09-29 | Asml Netherlands Bv | リソグラフィ装置および方法 |
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JP2020115237A (ja) * | 2005-12-30 | 2020-07-30 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置およびデバイス製造方法 |
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