JP5793456B2 - 半導体装置およびその製造方法、基板 - Google Patents
半導体装置およびその製造方法、基板 Download PDFInfo
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- JP5793456B2 JP5793456B2 JP2012068471A JP2012068471A JP5793456B2 JP 5793456 B2 JP5793456 B2 JP 5793456B2 JP 2012068471 A JP2012068471 A JP 2012068471A JP 2012068471 A JP2012068471 A JP 2012068471A JP 5793456 B2 JP5793456 B2 JP 5793456B2
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- 239000000758 substrate Substances 0.000 title claims description 60
- 239000004065 semiconductor Substances 0.000 title claims description 42
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 238000000034 method Methods 0.000 title claims description 16
- 239000012535 impurity Substances 0.000 claims description 85
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 53
- 229910052796 boron Inorganic materials 0.000 claims description 49
- 229910052751 metal Inorganic materials 0.000 claims description 36
- 239000002184 metal Substances 0.000 claims description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 30
- 229910052710 silicon Inorganic materials 0.000 claims description 29
- 239000010703 silicon Substances 0.000 claims description 29
- 238000005247 gettering Methods 0.000 claims description 19
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 59
- 238000005468 ion implantation Methods 0.000 description 15
- 238000001556 precipitation Methods 0.000 description 11
- 239000013078 crystal Substances 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
- 229910052799 carbon Inorganic materials 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 238000002513 implantation Methods 0.000 description 6
- 239000006104 solid solution Substances 0.000 description 6
- 238000000862 absorption spectrum Methods 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 230000002950 deficient Effects 0.000 description 4
- 230000007935 neutral effect Effects 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 2
- 101000878457 Macrocallista nimbosa FMRFamide Proteins 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 238000000026 X-ray photoelectron spectrum Methods 0.000 description 1
- KMTYGNUPYSXKGJ-UHFFFAOYSA-N [Si+4].[Si+4].[Ni++] Chemical compound [Si+4].[Si+4].[Ni++] KMTYGNUPYSXKGJ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- -1 boron ions Chemical class 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000012864 cross contamination Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26566—Bombardment with radiation with high-energy radiation producing ion implantation of a cluster, e.g. using a gas cluster ion beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
図1は、第1の実施形態に係る基板10を表す模式断面図である。基板10は、例えば、燐(P)がドープされたシリコン基板であり、第1の主面10aと、第2の主面10bとを有する。
図9は、第2の実施形態に係る半導体装置200を模式的に表す平面図である。半導体装置200は、CMOSイメージセンサであり、画素領域(Pixel Area)51と、周辺回路と、を備える。
図11は、第3の実施形態に係る半導体装置300を模式的に表す平面図である。半導体装置300は、汎用ロジックIC(Integrated Circuit)であり、構成要素として1組のマイクロプロセッサユニット(Micro-Processing Unit:MPU)61および63と、1組の論理ブロック65および67と、アナログIP(intellectual property core)69と、メモリ部(例えば、混載DRAM:Dynamic Random Access Memory)71と、を含む。さらに、これらの回路要素を相互に接続する内部システムバス73と、入出力部75と、を含む。
図12は、第4の実施形態に係る半導体装置400を模式的に表す平面図である。半導体装置400は、NAND型メモリであり、構成要素としてセルアレイ領域81と、ローデコーダ83と、センスアンプ85と、ビットライン回路87と、を含む。さらに、これらの回路要素につながるボンディングパッド89と、電源部91と、を含む。
Claims (6)
- 第1の主面と、前記第1の主面とは反対側の第2の主面と、を有し、シリコン、シリコンカーバイドおよびシリコンゲルマニウムのいずれかを材料とする基板であって、
前記第1の主面に設けられた機能素子を含む第1の領域と、
前記第2の主面に設けられた機能素子を含まない第2の領域であって、ホウ素を2×1020cm−3以上の密度で含み、12個の前記ホウ素からなる二十面体構造のクラスタを含む金属不純物のゲッタリング領域である第2の領域と、
を有する基板を備えた半導体装置。 - 機能素子を含む第1の領域が設けられ、シリコン、シリコンカーバイドおよびシリコンゲルマニウムのいずれかを材料とする基板であって、
前記第1の領域を除く非能動領域に、ホウ素を2×1020cm−3以上の密度で含み、12個の前記ホウ素からなる二十面体構造のクラスタを含む金属不純物のゲッタリング領域である第2の領域を有する基板を備えた半導体装置。 - 前記基板は、前記第1の領域が設けられた第1の主面と、前記第1の主面の反対側の第2の主面を有し、前記第2の主面に前記第2の領域が設けられた請求項2記載の半導体装置。
- 前記第2の領域は、前記第1の主面に設けられたダイシング領域に含まれる請求項2記載の半導体装置。
- シリコン、シリコンカーバイドおよびシリコンゲルマニウムのいずれかを材料とする基板にホウ素をイオン注入し、前記ホウ素を2×1020cm−3以上の密度で含み、12個の前記ホウ素からなる二十面体構造のクラスタを含む金属不純物のゲッタリング領域を形成する工程と、
前記基板の前記ホウ素を含まない部分に機能素子を含む能動領域を形成する工程と、
を備えた半導体装置の製造方法。 - 第1の主面と、
前記第1の主面の反対側の第2の主面であって、ホウ素を2×1020cm−3以上の密度で含み、12個の前記ホウ素からなる二十面体構造のクラスタを含む金属不純物のゲッタリング領域を有する第2の主面と、
を備え、
シリコン、シリコンカーバイドおよびシリコンゲルマニウムのいずれかを材料とする基板。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2012068471A JP5793456B2 (ja) | 2012-03-23 | 2012-03-23 | 半導体装置およびその製造方法、基板 |
US13/600,683 US9136125B2 (en) | 2012-03-23 | 2012-08-31 | Substrate of semiconductor device, for gettering metallic impurity |
Applications Claiming Priority (1)
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JP2012068471A JP5793456B2 (ja) | 2012-03-23 | 2012-03-23 | 半導体装置およびその製造方法、基板 |
Publications (2)
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JP2013201275A JP2013201275A (ja) | 2013-10-03 |
JP5793456B2 true JP5793456B2 (ja) | 2015-10-14 |
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JP2012068471A Expired - Fee Related JP5793456B2 (ja) | 2012-03-23 | 2012-03-23 | 半導体装置およびその製造方法、基板 |
Country Status (2)
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US (1) | US9136125B2 (ja) |
JP (1) | JP5793456B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2019080008A (ja) * | 2017-10-26 | 2019-05-23 | 信越半導体株式会社 | 基板の熱処理方法 |
KR102599049B1 (ko) * | 2018-11-06 | 2023-11-06 | 삼성전자주식회사 | 이미지 센서 |
Family Cites Families (22)
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JPH01303727A (ja) * | 1988-05-31 | 1989-12-07 | Nec Corp | 不純物ゲッタリング方法 |
JP3313432B2 (ja) * | 1991-12-27 | 2002-08-12 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP3579069B2 (ja) * | 1993-07-23 | 2004-10-20 | 株式会社東芝 | 半導体装置の製造方法 |
JP3524141B2 (ja) * | 1994-03-25 | 2004-05-10 | 株式会社東芝 | 半導体装置及びその製造方法 |
US5757063A (en) | 1994-03-25 | 1998-05-26 | Kabushiki Kaisha Toshiba | Semiconductor device having an extrinsic gettering film |
JPH09148335A (ja) | 1995-11-28 | 1997-06-06 | Sumitomo Metal Ind Ltd | シリコン半導体基板及びその製造方法 |
JP2973960B2 (ja) | 1997-01-29 | 1999-11-08 | 日本電気株式会社 | 半導体装置の製造方法 |
JPH10303207A (ja) | 1997-04-23 | 1998-11-13 | Hitachi Ltd | 半導体ウエハおよびその製造方法、ならびに半導体集積回路装置 |
JP3211747B2 (ja) | 1997-09-30 | 2001-09-25 | 日本電気株式会社 | 半導体装置の製造方法 |
JP2000021887A (ja) | 1998-07-06 | 2000-01-21 | Seiko Epson Corp | 半導体集積回路のゲッタリング方法及び半導体集積回路 |
JP3221413B2 (ja) * | 1998-10-01 | 2001-10-22 | 日本電気株式会社 | 半導体装置及び半導体装置の製造方法 |
JP4066574B2 (ja) * | 1999-03-04 | 2008-03-26 | 富士電機デバイステクノロジー株式会社 | 半導体装置の製造方法 |
JP2005515633A (ja) | 2001-12-21 | 2005-05-26 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | 窒素/炭素安定化された酸素析出核形成中心を有する理想的酸素析出を行ったシリコンウエハおよびその製造方法 |
US6610262B1 (en) * | 2002-03-04 | 2003-08-26 | Taiwan Semiconductor Manufacturing Company | Depletion mode SCR for low capacitance ESD input protection |
JP2005303218A (ja) * | 2004-04-16 | 2005-10-27 | Renesas Technology Corp | 半導体装置およびその製造方法 |
JP4983161B2 (ja) | 2005-10-24 | 2012-07-25 | 株式会社Sumco | シリコン半導体基板およびその製造方法 |
JP2010041000A (ja) | 2008-08-08 | 2010-02-18 | Sumco Corp | 窒素ドープシリコンウェーハの製造方法及び該方法により得られる窒素ドープシリコンウェーハ |
JP2010114409A (ja) | 2008-10-10 | 2010-05-20 | Sony Corp | Soi基板とその製造方法、固体撮像装置とその製造方法、および撮像装置 |
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JP2011151318A (ja) | 2010-01-25 | 2011-08-04 | Renesas Electronics Corp | 半導体装置およびその製造方法 |
US8344337B2 (en) * | 2010-04-21 | 2013-01-01 | Axcelis Technologies, Inc. | Silaborane implantation processes |
JP5195816B2 (ja) | 2010-05-17 | 2013-05-15 | 富士電機株式会社 | 半導体装置の製造方法 |
-
2012
- 2012-03-23 JP JP2012068471A patent/JP5793456B2/ja not_active Expired - Fee Related
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US9136125B2 (en) | 2015-09-15 |
US20130249061A1 (en) | 2013-09-26 |
JP2013201275A (ja) | 2013-10-03 |
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