JP2008166832A - 情報処理方法 - Google Patents
情報処理方法 Download PDFInfo
- Publication number
- JP2008166832A JP2008166832A JP2008013189A JP2008013189A JP2008166832A JP 2008166832 A JP2008166832 A JP 2008166832A JP 2008013189 A JP2008013189 A JP 2008013189A JP 2008013189 A JP2008013189 A JP 2008013189A JP 2008166832 A JP2008166832 A JP 2008166832A
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- circuit
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Abstract
【解決手段】各層が別々に最適化されるように、別々の層(103)上へのメモリ回路(103)および制御論理回路(101)の物理的分離が可能な三次元(3DS)メモリ(100)。幾つかのメモリ回路(103)について1つの制御論理回路(101)で十分であり、コストを低減できる。3DSメモリ(100)の製造は、メモリ回路(103)を50μm以下の厚さに薄肉化する工程と、該メモリ回路を、ウェーハ基板形態のまま回路積層体に接合する工程とを有する。微粒子の高密度層間垂直バス相互接続部(105)が使用されている。3DSメモリ(100)製造方法は、幾つかの性能および物理的サイズ効率を可能にしかつ確立された半導体加工技術により実施される。
【選択図】図1a
Description
3DSメモリ回路には2つの主要な製造方法がある。しかしながら、2つの3DSメモリ製造方法は、剛性支持基板すなわち共通基板(基板自体も回路部品層にすることは任意である)上への多数の回路基板の熱拡散金属接合(熱圧縮接合とも呼ばれる)である共通目的を有する。
この製造順序は、幾つかの回路層が共通基板すなわち支持基板に接合され、次に所定位置で薄肉化されることを想定する。第1a図には、この結果得られる3DSメモリ回路の一例が示されている。
この製造順序は、回路基板が最初にトランスファ基板に接合され、薄肉化され、次に回路積層体の1つの層として共通基板に接合されることを想定する。次に、トランスファ基板が離型される。この方法は、方法Aに比べて、最終回路積層体に接合される前に基板を薄肉化できるという長所を有し、かつ基板の回路層の同時薄肉化および垂直相互接続加工を行なうことができる。
を遂行するのに充分な制御論理を組み込むことにより試験コストを低減させる。
Claims (27)
- 複数の集積回路がそれぞれ形成された複数の基板を一緒にボンディングすることにより、該複数の集積回路の間に相互接続部を形成する方法であって、
該方法は、
第1の基板および第2の基板のそれぞれの係合面を加工することにより、該係合面の実質的な平坦性を実現するステップと、
該係合面上に係合相互接続部のパターンを形成するステップと、
該係合面の平坦な熱拡散ボンディングを実行するステップと、
該複数の集積回路が形成された該複数の基板のうちの少なくとも1つを薄肉化することにより、薄肉化された基板を形成し、該相互接続部の形成を容易し、該薄肉された基板の裏面加工を実行するステップと
を包含する、方法。 - 前記第1の基板を前記第2の基板に熱拡散ボンディングすることは、積層形IC構造を形成する、請求項1に記載の方法。
- 前記相互接続部のうちの少なくともいくつかは、100μm未満のピッチを有する垂直相互接続部である、請求項2に記載の方法。
- 前記積層形IC構造とさらなる基板とをさらにボンディングするステップを包含する、請求項3に記載の方法。
- 前記さらなるボンディングは、前記積層形IC構造と前記さらなる基板とを互いに熱拡散ボンディングする、請求項4に記載の方法。
- 前記熱拡散ボンディングは、100μm未満の接点ピッチを有する接点パターンを用いる、請求項5に記載の方法。
- 前記接点パターンは、前記垂直相互接続部の延長部を形成する、請求項6に記載の方法。
- 前記積層形IC構造とさらなる基板とをさらにボンディングするステップを包含する、請求項1に記載の方法。
- 前記さらなるボンディングは、単体化された積層形IC構造と前記さらなる基板とをワイヤボンディングする、請求項8に記載の方法。
- 前記相互接続部のうちの少なくともいくつかは、平坦化加工により形成される、請求項1に記載の方法。
- 前記さらなるボンディングは、単体化された積層形IC構造の垂直相互接続部の接点パターンと、前記さらなる積層形ICまたは通常の回路ICとを熱拡散金属ボンディングする、請求項8に記載の方法。
- 前記さらなるボンディングは、単体化された積層形IC構造の相互接続部の接点パターンと、前記さらなる積層形ICまたは通常の回路ICとを熱拡散金属ボンディングする、請求項8に記載の方法。
- 前記第1の基板および前記第2の基板は、第3基板にワイヤボンディングされる、請求項11に記載の方法。
- 前記集積回路が形成されている基板を薄肉化することにより、薄肉化された基板を形成し、前記相互接続部の形成を容易にするステップをさらに包含する、請求項1に記載の方法。
- 前記相互接続部のうちの少なくともいくつかは、100μm未満のピッチを有する垂直相互接続部である、請求項14に記載の方法。
- 前記薄肉化される基板は、50μm未満の厚さに薄肉化される、請求項14に記載の方法。
- 前記薄肉化される基板の半導体部分は、約1〜8μmの範囲の厚さに薄肉化される、請求項14に記載の方法。
- 前記薄肉化するステップは、前記基板を研摩することを包含する、請求項14に記載の方法。
- 前記基板は、ボンディングされた後に研摩される、請求項18に記載の方法。
- 前記基板はボンディングされる前に研摩される、請求項18に記載の方法。
- 少なくとも1つの集積回路が、再使用可能な基板上に形成され、前記方法は、該集積回路が形成される層を該再使用可能な基板から分離するステップをさらに包含する、請求項13に記載の方法。
- 前記少なくとも1つの集積回路は、ポリシリコントランジスタで形成される、請求項21に記載の方法。
- 前記ボンディングは、熱拡散ボンディングを含む、請求項13に記載の方法。
- 一緒にボンディングされるべきそれぞれの表面上には、互いに係合する接点パターンが形成される、請求項23に記載の方法。
- 前記係合する接点パターンは、主として金属で形成される、請求項24に記載の方法。
- 前記金属は、Al、Sn、Ti、In、Pb、Zn、Ni、Cu、Pt、Auおよびこれらの合金からなる群がら選択された金属を含む、請求項25に記載の方法。
- 前記熱拡散ボンディングによりボンディングされた表面は、相互接続金属被膜および非相互接続金属被膜を含み、該熱拡散ボンディングは、該相互接続金属被膜を介する電気的相互接続と、該非相互接続金属被膜を介する機械的ボンディングとを同時に実現する、請求項1に記載の方法。
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