WO2018123708A1 - Élément de grille de connexion et son procédé de fabrication et boîtier à semi-conducteur - Google Patents

Élément de grille de connexion et son procédé de fabrication et boîtier à semi-conducteur Download PDF

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Publication number
WO2018123708A1
WO2018123708A1 PCT/JP2017/045451 JP2017045451W WO2018123708A1 WO 2018123708 A1 WO2018123708 A1 WO 2018123708A1 JP 2017045451 W JP2017045451 W JP 2017045451W WO 2018123708 A1 WO2018123708 A1 WO 2018123708A1
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Prior art keywords
alloy
roughened
lead frame
layer
conductive substrate
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PCT/JP2017/045451
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English (en)
Japanese (ja)
Inventor
達也 中津川
良聡 小林
真 橋本
邦夫 柴田
Original Assignee
古河電気工業株式会社
古河精密金属工業株式会社
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Application filed by 古河電気工業株式会社, 古河精密金属工業株式会社 filed Critical 古河電気工業株式会社
Priority to JP2018518662A priority Critical patent/JP6479265B2/ja
Priority to KR1020197013787A priority patent/KR102482396B1/ko
Priority to CN201780068101.4A priority patent/CN109937479B/zh
Publication of WO2018123708A1 publication Critical patent/WO2018123708A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • H01L23/49582—Metallic layers on lead frames
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10—Electroplating with more than one layer of the same or of different metals
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49548—Cross section geometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads

Definitions

  • the present invention relates to a lead frame material suitable for use in a resin-encapsulated semiconductor device in which a semiconductor element and a lead frame having a surface treatment layer are electrically connected to each other and sealed with a mold resin.
  • the present invention relates to a manufacturing method and a semiconductor package.
  • This type of resin-encapsulated semiconductor device has a structure in which a semiconductor element and a lead frame that are electrically connected to each other by a wire or the like are sealed with a mold resin.
  • a resin-encapsulated semiconductor device is manufactured by subjecting a lead frame to a surface treatment such as exterior plating and forming a surface film with a Sn alloy such as a Sn—Pb alloy or a Sn—Bi alloy. Is common.
  • the technique for roughening the plating surface is to roughen the surface by subjecting the lead frame to roughening, and (1) the mold resin enters the irregularities of the roughened plating film to form a strong mechanical joint.
  • the effect (anchor effect), (2) improvement in chemical bonding due to improvement in the contact area between the mold resin and the plating surface are expected.
  • the present invention is a lead frame suitable for forming a lead frame surface capable of maintaining good resin adhesion even when a high-temperature and high-humidity test is performed under the severe conditions described above. It is an object to provide a material, a manufacturing method thereof, and a highly reliable semiconductor package.
  • the present inventors have intensively studied to solve the above-mentioned problems, and the cross-sectional shape of the projections of the roughened particles constituting the roughened layer of the roughened film formed on the conductive substrate is resin adhesion.
  • Good adhesion caused by the so-called anchor effect, which is caused by filling and forming the resin on the uneven surface (particularly the concave portion) due to the protrusions formed on the surface of the lead frame material. It was investigated whether it could be maintained even when the high temperature and high humidity test was conducted under the above severe conditions.
  • the inventors measured the protrusion forming the roughened layer of the roughened film formed on the conductive substrate, the maximum width when measured in the cross section in the thickness direction of the roughened film, the maximum width
  • the maximum width By controlling to have a shape that is 1 to 5 times the minimum width when measured at the lower part located on the conductive substrate side relative to the measurement position, the minimum width of the projection of roughened particles in particular It was found that the peeling phenomenon caused by the shearing of the resin, which is likely to occur due to the stress concentration due to the expansion or contraction of the resin, can be effectively suppressed.
  • the gist configuration of the present invention is as follows.
  • a roughened film comprising a conductive substrate and at least one roughened layer formed of protrusions of a plurality of roughened particles directly or via an intermediate layer on at least one surface of the conductive substrate.
  • the protrusion has a maximum width when measured in a cross section in the thickness direction of the roughened film, and a minimum width when measured at a lower portion located on the conductive substrate side than the measurement position of the maximum width.
  • a lead frame material having a shape that is 1 to 5 times as large as the above.
  • the roughening layer is made of copper, copper alloy, nickel, nickel alloy, palladium, palladium alloy, silver, silver alloy, tin, tin alloy, zinc, zinc alloy, rhodium, rhodium alloy, ruthenium, ruthenium alloy, iridium.
  • a surface film including at least one surface coating layer is further provided on at least a part of the surface of the roughened film, and the surface coating layer includes palladium, palladium alloy, rhodium, rhodium alloy, ruthenium, The ruthenium alloy, platinum, platinum alloy, iridium, iridium alloy, gold, gold alloy, silver, or a metal or alloy selected from the group of silver alloys, according to any one of (1) to (3) above Lead frame material.
  • the lead frame material according to (4), wherein the intermediate layer is nickel, nickel alloy, cobalt, cobalt alloy, copper, or copper alloy.
  • a roughened film including at least one roughened layer formed of protrusions of a plurality of roughened particles is formed by electroplating directly or via an intermediate layer on at least one surface of the conductive substrate.
  • the protrusion has a maximum width when measured in the cross section in the thickness direction of the roughened film, and the protrusion is measured at a lower portion located on the conductive substrate side than the measurement position of the maximum width.
  • a semiconductor package comprising the lead frame material according to any one of (1) to (5) above.
  • the lead frame material of the present invention comprises a conductive substrate and at least one roughened layer formed of a plurality of roughened particle projections directly or via an intermediate layer on at least one surface of the conductive substrate.
  • a roughened film including the protrusion, and the protrusion has a maximum width when measured in a cross-section in the thickness direction of the roughened film, the lower side being positioned closer to the conductive substrate than the measurement position of the maximum width
  • FIG. 1 is a schematic cross-sectional view of a representative lead frame material according to the present invention.
  • FIG. 2 is a diagram for explaining a method of calculating the specific surface area of the roughened layer.
  • FIG. 3 is a diagram for explaining the maximum width Wmax and the minimum width Wmin of the protrusions constituting one roughened layer.
  • FIG. 4 is a schematic cross-sectional view of another lead frame material according to the present invention.
  • FIG. 5 is a diagram for explaining the maximum width Wmax and the minimum width Wmin of the protrusions constituting the two roughened layers.
  • FIG. 1 is a schematic cross-sectional view of a typical lead frame material according to the present invention.
  • Reference numeral 1 in FIG. 1 denotes a conductive substrate
  • 2 denotes a roughened layer
  • 3 denotes a roughened film
  • 4 denotes a protrusion.
  • And 10 is a lead frame material.
  • the lead frame material 10 of the present invention includes a conductive substrate 1 and a roughened film 3 including at least one roughened layer 2.
  • the conductive substrate 1 may be any material having conductivity, and examples thereof include copper, copper alloy, iron, iron alloy, aluminum, and aluminum alloy, and copper alloy, iron alloy, and aluminum alloy are preferable.
  • the lead frame material it is particularly preferable to use a copper alloy having a good balance between conductivity and strength, since the lead frame material is required to have strength capable of withstanding deformation such as bending during bonding with a semiconductor element.
  • copper alloy for example, “C14410 (Cu-0.15Sn, manufactured by Furukawa Electric Co., Ltd., trade name: EFTEC (registered trademark) -3)” which is a CDA (Copper Development Association) listed alloy, “C19400” (Cu-Fe alloy material, Cu-2.3Fe-0.03P-0.15Zn) "," C18045 (Cu-0.3Cr-0.25Sn-0.2Zn, manufactured by Furukawa Electric Co., Ltd., trade name: EFTEC (registered trademark) -64T) ",” C50710 (Cu-2.0Sn-0.2Ni-0.05P), manufactured by Furukawa Electric Co., Ltd., trade name: MF202 ",” C70250 (Cu-3Ni-0.65Si) -0.15Mg), manufactured by Furukawa Electric Co., Ltd., trade name: EFTEC (registered trademark) -7025 ", and the like.
  • CDA Copper Development Association
  • the unit of the numbers shown immediately before each element is “mass%”. Like these copper alloys, copper having a tensile strength of 350 to 800 N / mm 2 , preferably 500 to 800 N / mm 2 and a conductivity of 30 to 90% IACS, preferably 50 to 80% IACS It is preferred to use alloy strips.
  • the above-mentioned “% IACS” represents the conductivity when the resistivity 1.7241 ⁇ 10 ⁇ 8 ⁇ m of universal standard annealed copper (International Annealed Copper Standard) is 100% IACS.
  • “50% The conductivity of “IACS” means 50% of the conductivity of universal standard annealed copper.
  • the conductive substrate 1 containing such an iron alloy has a low conductivity, but does not require a high conductivity, and can be applied to a lead frame material 10 for the purpose of transmitting electrical signals.
  • an aluminum alloy for example, an Al—Mg alloy such as A5052 can be used. Since the resin-encapsulated semiconductor device easily retains heat due to the mold resin, it is important to dissipate the internal heat through the conductive substrate.
  • the heat dissipation effect can be improved as compared with the case where the roughened film is not formed, and the conductive substrate is thin to 0.05 mm. It became possible. If the thickness of the conductive substrate is less than 0.05 mm, sufficient heat dissipation cannot be achieved. On the other hand, if the thickness of the conductive substrate is 2 mm or more, miniaturization of the semiconductor device cannot be achieved. For this reason, the thickness of the conductive substrate 1 is preferably 0.05 to 2 mm, more preferably 0.1 to 1 mm.
  • the roughened film 3 is at least one roughened layer 2 formed of a plurality of roughened particle projections 4 directly or via an intermediate layer (not shown) on at least one surface of the conductive substrate 1. It is configured.
  • the roughened film 3 may be composed of at least one roughened layer 2, but it is preferable that the roughened film 3 is composed of one to three roughened layers 2 in view of the complexity of the manufacturing process.
  • the roughening film 3 is formed by two layers in which one or more factors such as composition and formation conditions are different from those of the first roughening layer 2-1 after forming the first roughening layer 2-1.
  • the specific surface area can be effectively increased with a relatively thin film thickness by forming the roughened layer 2-2 of the first layer on the first roughened layer 2-1, by so-called multiple roughening. This is preferable because it can be performed (see FIG. 4).
  • the film thickness of the roughened film 3 is not measured locally, but at least by the fluorescent X-ray method (for example, a film thickness measuring device such as SFT9400 (trade name) manufactured by SII). The average film thickness when measured at three arbitrary points at 0.2 mm or more is used.
  • the roughened film 3 is composed of a plurality of roughened layers 2, the total thickness of all the layers is defined as the thickness of the roughened film 3.
  • the film thickness of the roughening film 3 is not particularly limited, but the larger the film thickness, the larger the unevenness due to the roughening. Therefore, in order to increase the roughened shape, the lower limit value of the film thickness of the roughened film 3 is preferably 0.2 ⁇ m or more, more preferably 0.5 ⁇ m or more, and further preferably 0.8 ⁇ m or more. On the other hand, when the film thickness of the roughened film 3 exceeds 3 ⁇ m, there is a concern that the roughened film 3 may drop off during transportation, so-called “powder falling”. For this reason, the upper limit of the film thickness of the roughening film 3 is preferably 3 ⁇ m or less, more preferably 2 ⁇ m or less, and still more preferably 1.5 ⁇ m or less.
  • the roughened layer 2 is formed of a plurality of roughened particle projections 4.
  • the roughening layer 2 may be formed by various methods such as wet plating and dry plating, but is preferably formed by electroplating from the viewpoint that it can be formed easily and inexpensively.
  • the roughening layer 2 is made of, for example, copper, copper alloy, nickel, nickel alloy, palladium, palladium alloy, silver, silver alloy, tin, tin alloy, zinc, zinc alloy, rhodium, rhodium alloy, ruthenium, ruthenium alloy, iridium and iridium.
  • it comprises a metal or alloy selected from the group of alloys.
  • the roughened layer 2 is preferably made of copper, copper alloy, nickel or nickel from the viewpoint of improving adhesion to the surface film. More preferably, an alloy is included.
  • the copper alloy include a copper-tin alloy, a copper-zinc alloy
  • examples of the nickel alloy include a nickel-zinc alloy and a nickel-tin alloy.
  • the main feature of the structure of the present invention is to optimize the cross-sectional shape of the projections 4 of the roughened particles constituting the roughened layer 2, more specifically, the projections 4 are formed as shown in FIG.
  • the maximum width Wmax when measured in the cross section in the thickness direction of the roughened film 3 is the maximum when measured at the lower portion located on the conductive substrate 1 side than the Wmax measurement position of the maximum width.
  • the control is to have a shape that is 1 to 5 times the small width Wmin.
  • the shear strength (bonding strength) of the resin in the shear test is high, and good resin adhesion is obtained.
  • a high temperature and high humidity durability test such as a high temperature and high humidity test under harsh conditions that are allowed to stand for 168 hours in an environment of 85 ° C. and 85% humidity
  • roughening with the same surface roughness is performed. It has been found that some of the layers have a shear strength that greatly decreases and cannot maintain good resin adhesion.
  • the present inventors proceeded with further detailed investigations.
  • the ratio of the maximum width to the minimum width of the projections of the roughened particles forming the roughened layer of the roughened film was 1 to 5, that is, the protrusions were
  • the maximum width when measured in the cross section in the thickness direction of the roughened film is 1 to 5 times the minimum width when measured at the lower portion located on the conductive substrate side from the measurement position of the maximum width.
  • the roughened layer having the same degree of surface roughness it is left to stand for 168 hours in an environment of high temperature and high humidity, for example, at a temperature of 85 ° C. and a humidity of 85%. It has been found that even after a high-temperature and high-humidity test under harsh conditions, good resin adhesion can be maintained with almost no decrease in the shear strength (bonding strength) of the resin.
  • the maximum width is 1 times the minimum width, which means that the maximum width and the minimum width are the same, and the shape of the projection may be a substantially cylindrical or prismatic shape.
  • the maximum width of the protrusion exceeds 5 times the minimum width, the stress concentration due to the expansion and contraction of the resin increases at the minimum width of the protrusion forming the roughened layer, so the anchor effect is effective. Cannot be exerted easily, and breakage tends to occur at the minimum width portion of the protrusion. Therefore, the protrusion has a maximum width of 1 to 5 times the minimum width.
  • the mold resin not only exhibits an anchoring effect, but the shear strength of the lead frame material is improved by making the resin less likely to break at the minimum portion of the protrusion forming the roughened layer.
  • the ratio of the maximum width to the minimum width of the protrusion is preferably 1.1 to 4.9 times, preferably 1.2 to It is more preferably 4.8 times, further preferably 1.5 to 4.0 times, and most preferably 1.5 to 3.0 times.
  • it is the shape of the surface in a protrusion, it may be sharply sharp or round and smooth, and the ratio of the maximum width and the minimum width of the protrusion is important.
  • the maximum width and the minimum width of the protrusions in the present invention are prepared by processing a lead frame material on which a roughened layer is formed by a method such as Focused Ion Beam (FIB) or mechanical polishing, for example, Next, the roughened layer of the vertical cross-section sample is subjected to cross-sectional observation with an optical microscope, a scanning electron microscope, etc., and the line segment is translated from the surface of the conductive substrate toward the surface of the roughened layer to roughen the surface.
  • FIB Focused Ion Beam
  • the width is measured for each protrusion, and the maximum value (maximum width) Wmax and the minimum value (minimum width) Wmin are determined. More specifically, as shown in FIG. 3, a perpendicular line is drawn from the conductive substrate 1 in the direction of the roughened layer, and a line parallel to the substrate (parallel line) is scanned in the direction from the apex toward the conductive substrate 1.
  • the width indicating the maximum value of the protrusion 4 when the protrusion is made is set as Wmax, and the minimum value of the protrusion 4 when the parallel line is further scanned in the direction from the position of the maximum width Wmax toward the conductive substrate 1 is set.
  • the width shown is determined as Wmin as the minimum width.
  • the value of the ratio Wmax / Wmin needs to be 1 to 5.
  • the minimum width Wmin of the protrusion 4 is measured at a lower portion located on the conductive substrate 1 side than the measurement position of the maximum width Wmax of the protrusion 4 when measured in the cross section in the thickness direction of the roughened film 3.
  • the roughened layer 2 is basically formed three-dimensionally, so that the roughened layer 2 for measuring the maximum width Wmax and the minimum width Wmin of the protrusion 4 is one layer. 5 or two or more roughened layers (for example, two roughened layers 2-1 and 2-2 in FIG. 5), and the projection 4
  • the case where the maximum width Wmax and the minimum width Wmin can be measured is used as a measurement object.
  • the conductive substrate 1 In the case of the roughened layer 2 that appears to float, the roughened layer that cannot be measured in the present invention is used.
  • the maximum width Wmax and the minimum width Wmin of each of the ten protrusions 4 existing in one roughened layer 2 are measured in an arbitrary cross section, and the ratio Wmax of the maximum width Wmax to the minimum width Wmin is measured. / Wmin is calculated, and the lead frame material 10 having the roughened layer 2 whose average ratio is 1 to 5 times is defined as the lead frame material of the present invention.
  • the size of the minimum width Wmin of the projection 4 forming the roughened layer 2 in the present invention is not particularly specified, but if the minimum width Wmin is too small, the resin is a projection of the roughened layer 2. On the other hand, if the minimum width Wmin is too large, the effect of increasing the shear strength tends to be small. Therefore, the minimum width Wmin of the protrusion 4 is preferably in the range of 0.2 ⁇ m to 3 ⁇ m on average, and more preferably in the range of 0.5 ⁇ m to 1 ⁇ m.
  • the distance between the protrusions 4 and 4 is not particularly limited, but the average distance between the vertices of the protrusions 4 and 4 is preferably in the range of 0.2 to 20 ⁇ m, and preferably 0.5 to 10 ⁇ m. A range is more preferred.
  • the lead frame material 10 of the present invention has a roughened layer 2 with respect to a conductive substrate (hereinafter also simply referred to as “substrate”) 1.
  • the roughened layer 2 preferably has a specific surface area of 110% or more. This is because the anchor effect cannot be sufficiently obtained when the specific surface area is less than 110%.
  • the specific surface area should be 500% or less. Is preferred.
  • the line segment length of the outermost layer of the roughened coating 3 (in FIG. 2)
  • the percentage of the ratio A / B divided by the (straight) length of the surface of the conductive substrate 1 becomes the specific surface area (%), for example, non-contact interference It can be measured using a measuring device such as a microscope (for example, manufactured by Bruker AXS).
  • the roughened layer may be formed in at least a part of the resin-molded portion in the present invention, and the roughened layer 2 may be partially formed as well as the entire surface treatment. Good.
  • the lead frame material 10 is preferably at least 1/5 or more of the portion to be resin-molded, and more preferably has an area of 1/2 or more, thereby exhibiting an effect of improving adhesion.
  • the roughened layer 2 is formed on the entire surface to be resin-molded.
  • the shape of the partially provided roughening layer 2 can take various forms such as a stripe shape, a spot shape, and a ring shape.
  • the roughened layer 2 can be formed only on one side.
  • the lead frame material 10 of the present invention forms an intermediate layer between the conductive substrate 1 and the roughened film 3 in order to suppress diffusion of composition components constituting the conductive substrate 1 and improve adhesion. May be.
  • the intermediate layer include nickel, nickel alloy, cobalt, cobalt alloy, copper, and copper alloy.
  • the lead frame material 10 of the present invention preferably further includes a surface film including at least one surface coating layer directly or via an intermediate layer on at least a part of the surface of the roughened film 3.
  • the surface coating layer includes a metal or alloy selected from the group of palladium, palladium alloy, rhodium, rhodium alloy, ruthenium, ruthenium alloy, platinum, platinum alloy, iridium, iridium alloy, gold, gold alloy, silver and silver alloy. It is preferable.
  • Examples of various alloys constituting the surface coating layer include palladium-silver alloys as palladium alloys, rhodium-palladium alloys as rhodium alloys, ruthenium-iridium alloys as ruthenium alloys, platinum-gold alloys and iridium alloys as platinum alloys. Examples thereof include platinum-iridium alloys, gold alloys such as gold-silver alloys, and silver alloys such as silver-tin alloys.
  • One type of surface film may be used, but two or more layers are preferable.
  • the surface coating layer constituting the surface coating is two or more layers
  • Pd / Au, Rh / Au, Pd / Ag / Au, Pd are arranged in the order of lamination from the roughened coating 3 side.
  • / Rh / Au, Ru / Pd / Au, and the like are arranged in the order of lamination from the roughened coating 3 side.
  • Rh / Au, Ru / Pd / Au, and the like By forming the surface film layer on the roughened film in this way, the heat resistance against heat generation of the lead frame is improved, and the strength of the projections of the roughened particles that form the roughened layer of the roughened film. Can be improved, the protrusions can be prevented from breaking, and an anchor effect can be exhibited.
  • the roughened layer is two layers of copper and nickel, and the surface film layer is two layers of Pd / Au or two layers of Rh / Au,
  • the lower roughened layer is copper and the upper roughened layer is nickel, whereas the surface film layer is composed of Pd and the upper surface coated layer is Au.
  • the two layers or the lower surface coating layer is Rh and the upper surface coating layer is two layers of Au. If the thickness of these surface coatings is too large, the surface irregularities of the roughened film 3 may be filled, and the effects of the present invention described above may not be sufficiently exhibited.
  • the surface film is mainly composed of a noble metal material.
  • the film thickness of each surface coating layer is 1 micrometer or less as a total film thickness (film thickness of a surface film) of the laminated
  • a conductive substrate 1 is prepared, and a cathode electrolytic degreasing process and a pickling process are performed on the conductive substrate 1.
  • a roughened film 3 including at least one roughened layer 2 is formed by electroplating, and then further electroplated as necessary.
  • the lead frame material 10 can be manufactured by forming a surface film including at least one surface coating layer.
  • Table 1 shows cathode electrolytic degreasing conditions
  • Table 2 shows pickling conditions
  • Table 3 shows various intermediate layer forming conditions
  • Table 4 shows various roughening layer 2 forming conditions
  • 5 shows conditions for forming various surface coating layers.
  • the roughened layer 2 is preferably formed by an electroplating method because the shape of the protrusions can be controlled relatively easily by current density, stirring, temperature, treatment time, and the like, and is simple.
  • the intermediate layer and the surface coating layer are also preferably formed by a wet plating method such as an electroplating method from the viewpoint of productivity, but may be manufactured by a dry plating method or other manufacturing methods, and there is a particular limitation. do not do.
  • the roughened film is composed of two roughened layers by forming an upper roughened layer in addition to the lower roughened layer, In Examples 22 to 24, an intermediate layer is further formed between the conductive substrate and the roughened film. In Examples 29 and 30, the roughened film is added to the lower roughened layer. In addition, an upper roughened layer is formed to form two roughened layers, and a surface film including two layers of a lower surface covering layer and an upper surface covering layer is further formed.
  • Comparative Example 1 Although the specific surface area of the roughened layer is as large as 550%, the ratio of the maximum width of the protrusions forming the roughened layer to the minimum width is not controlled, and is outside the scope of the present invention.
  • a test piece of a lead frame material (5.2 times) was produced.
  • a resin mold was injected with a transfer mold test apparatus (product name: Model FTS) manufactured by Kotaki Seiki Co., Ltd. under conditions of a mold temperature of 130 ° C., a holding time after molding of 90 seconds, and an injection pressure of 6.865 MPa. Molding was performed to form a pudding-like test piece having a contact area of 10 mm2.
  • a transfer mold test apparatus product name: Model FTS
  • Molding was performed to form a pudding-like test piece having a contact area of 10 mm2.
  • Each test piece was put into a high-temperature and high-humidity test (maintained at 85 ° C. and 85% RH for 168 hours), and the test piece was evaluated for the resin adhesion and the powder falling off under the following conditions. Table 7 shows the evaluation results.
  • Table 7 shows the evaluation results of the resin adhesion.
  • the evaluation of the resin adhesion shown in Table 7 is “A” when the shear strength (peel strength) is 9.8 MPa or more on the average and the shear strength (peel strength) is excellent.
  • the resin adhesion is “B”, and when the shear strength (peel strength) is less than 4.9 MPa on the average, the resin adhesion is Shown as “C” as inferior.
  • the resin adhesion was evaluated by measuring both “initial shear strength” and “shear strength after high temperature and high humidity test”.
  • the “shear strength after the high-temperature and high-humidity test” is a value after each test piece is resin-molded and left for 168 hours in an environment at a temperature of 85 ° C. and a humidity of 85%.
  • the “initial shear strength” is the shear strength immediately after each test piece is resin-molded (before the high temperature and high humidity test).
  • Powderiness was evaluated by visual evaluation. The evaluation results are shown in Table 7.
  • the powder falling property shown in Table 7 is “A (excellent)” when powder falling from the surface is not recognized, “B (good)” when powder falling slightly occurs, A case where a great number of drops occur is indicated as “C (impossible)”, and “A” and “B” are levels for practical use.
  • the specific surface area of the roughened layer is very large as 550%, the ratio of the maximum width of the protrusions forming the roughened layer to the minimum width is not controlled, and is outside the range of the present invention (5.2 times)
  • the initial shear strength is “A” and the resin adhesion is excellent, but the shear strength after the high-temperature and high-humidity test is “C”, and the resin adhesion is greatly deteriorated.
  • the powder-off property was inferior to “C”, and was not at a practical level.
  • the lead frame material of the present invention is subjected to a high temperature and high humidity durability test, for example, when a high temperature and high humidity test is performed under harsh conditions of leaving for 168 hours in an environment of a temperature of 85 ° C. and a humidity of 85%, Good resin adhesion to the lead frame can be maintained with almost no deterioration, and a semiconductor package constructed using this lead frame material can achieve high reliability.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

Cette invention concerne un élément de grille de connexion (10), comprenant un substrat électriquement conducteur (1) et un film rugueux (3) qui comprend au moins une couche rugueuse (2) formée d'une pluralité de saillies de particules rugueuses (4) sur au moins un côté du substrat électriquement conducteur (1), soit directement, soit avec une couche intermédiaire interposée entre ceux-ci. Les saillies (4) ont une forme telle qu'une largeur maximale mesurée au niveau d'une section transversale dans le sens de l'épaisseur du film rugueux (3) est de 1 à 5 fois une largeur minimale mesurée au niveau d'une partie inférieure positionnée sur le côté du substrat électriquement conducteur (1) en dessous de la position à laquelle la largeur maximale est mesurée.
PCT/JP2017/045451 2016-12-27 2017-12-19 Élément de grille de connexion et son procédé de fabrication et boîtier à semi-conducteur WO2018123708A1 (fr)

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JP2018518662A JP6479265B2 (ja) 2016-12-27 2017-12-19 リードフレーム材およびその製造方法ならびに半導体パッケージ
KR1020197013787A KR102482396B1 (ko) 2016-12-27 2017-12-19 리드 프레임재 및 이의 제조 방법 및 반도체 패키지
CN201780068101.4A CN109937479B (zh) 2016-12-27 2017-12-19 引线框材料及其制造方法以及半导体封装件

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JP2020063492A (ja) * 2018-10-18 2020-04-23 Ｊｘ金属株式会社 導電性材料、成型品及び電子部品
JP7178530B1 (ja) * 2021-07-16 2022-11-25 古河電気工業株式会社 リードフレーム材およびその製造方法、ならびに半導体パッケージ
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JP2020063493A (ja) * 2018-10-18 2020-04-23 Ｊｘ金属株式会社 導電性材料、成型品及び電子部品
WO2020079905A1 (fr) * 2018-10-18 2020-04-23 Ｊｘ金属株式会社 Matériau électroconducteur, article moulé et composant électronique
JP2020063492A (ja) * 2018-10-18 2020-04-23 Ｊｘ金属株式会社 導電性材料、成型品及び電子部品
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JP7178530B1 (ja) * 2021-07-16 2022-11-25 古河電気工業株式会社 リードフレーム材およびその製造方法、ならびに半導体パッケージ
WO2023286697A1 (fr) * 2021-07-16 2023-01-19 古河電気工業株式会社 Matériau de grille de connexion et son procédé de production, et boîtier de semi-conducteur

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CN109937479A (zh) 2019-06-25
TW201830627A (zh) 2018-08-16
CN109937479B (zh) 2023-01-13
KR102482396B1 (ko) 2022-12-28
TWI762546B (zh) 2022-05-01
KR20190096964A (ko) 2019-08-20
JP6479265B2 (ja) 2019-03-06

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