JP6479265B2 - リードフレーム材およびその製造方法ならびに半導体パッケージ - Google Patents

リードフレーム材およびその製造方法ならびに半導体パッケージ Download PDF

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Publication number: JP6479265B2
Authority: JP; Japan
Prior art keywords: alloy; roughened; layer; lead frame; conductive substrate
Prior art date: 2016-12-27
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Active

Application number

JP2018518662A

Other languages

English (en)

Japanese (ja)

Other versions

JPWO2018123708A1 (ja

Inventor

達也中津川

良聡小林

真橋本

邦夫柴田

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

THE FURUKAW ELECTRIC CO., LTD.

Furukawa Precision Engineering Co Ltd

Original Assignee

THE FURUKAW ELECTRIC CO., LTD.

Furukawa Precision Engineering Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2016-12-27

Filing date

2017-12-19

Publication date

2019-03-06

2017-12-19 Application filed by THE FURUKAW ELECTRIC CO., LTD., Furukawa Precision Engineering Co Ltd filed Critical THE FURUKAW ELECTRIC CO., LTD.

2018-12-27 Publication of JPWO2018123708A1 publication Critical patent/JPWO2018123708A1/ja

2019-03-06 Application granted granted Critical

2019-03-06 Publication of JP6479265B2 publication Critical patent/JP6479265B2/ja

Status Active legal-status Critical Current

2037-12-19 Anticipated expiration legal-status Critical

Links

239000000463 material Substances 0.000 title claims description 47
239000004065 semiconductor Substances 0.000 title claims description 20
238000004519 manufacturing process Methods 0.000 title claims description 11
239000010410 layer Substances 0.000 claims description 131
239000000758 substrate Substances 0.000 claims description 53
238000007788 roughening Methods 0.000 claims description 36
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 24
239000002345 surface coating layer Substances 0.000 claims description 21
KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 19
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 17
229910052802 copper Inorganic materials 0.000 claims description 17
239000010949 copper Substances 0.000 claims description 17
239000000956 alloy Substances 0.000 claims description 16
229910045601 alloy Inorganic materials 0.000 claims description 15
229910000881 Cu alloy Inorganic materials 0.000 claims description 14
239000002245 particle Substances 0.000 claims description 13
239000010931 gold Substances 0.000 claims description 12
238000005259 measurement Methods 0.000 claims description 11
238000007747 plating Methods 0.000 claims description 11
229910052759 nickel Inorganic materials 0.000 claims description 10
229910001316 Ag alloy Inorganic materials 0.000 claims description 9
238000000576 coating method Methods 0.000 claims description 9
239000010948 rhodium Substances 0.000 claims description 9
229910001252 Pd alloy Inorganic materials 0.000 claims description 8
239000011248 coating agent Substances 0.000 claims description 8
229910052751 metal Inorganic materials 0.000 claims description 8
239000002184 metal Substances 0.000 claims description 8
229910052763 palladium Inorganic materials 0.000 claims description 8
BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
229910000575 Ir alloy Inorganic materials 0.000 claims description 7
229910000629 Rh alloy Inorganic materials 0.000 claims description 7
229910000929 Ru alloy Inorganic materials 0.000 claims description 7
229910052737 gold Inorganic materials 0.000 claims description 7
229910052741 iridium Inorganic materials 0.000 claims description 7
GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 7
229910001020 Au alloy Inorganic materials 0.000 claims description 6
229910000990 Ni alloy Inorganic materials 0.000 claims description 6
KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 6
BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
239000003353 gold alloy Substances 0.000 claims description 6
229910052703 rhodium Inorganic materials 0.000 claims description 6
MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 6
229910052707 ruthenium Inorganic materials 0.000 claims description 6
229910052709 silver Inorganic materials 0.000 claims description 6
239000004332 silver Substances 0.000 claims description 6
229910001260 Pt alloy Inorganic materials 0.000 claims description 5
PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
229910052697 platinum Inorganic materials 0.000 claims description 4
229910000531 Co alloy Inorganic materials 0.000 claims description 3
239000010941 cobalt Substances 0.000 claims description 3
229910017052 cobalt Inorganic materials 0.000 claims description 3
GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
230000005611 electricity Effects 0.000 claims 1
239000010408 film Substances 0.000 description 68
229920005989 resin Polymers 0.000 description 42
239000011347 resin Substances 0.000 description 42
238000012360 testing method Methods 0.000 description 33
238000000034 method Methods 0.000 description 15
230000000694 effects Effects 0.000 description 12
238000011156 evaluation Methods 0.000 description 10
238000009713 electroplating Methods 0.000 description 7
239000000843 powder Substances 0.000 description 6
229910000640 Fe alloy Inorganic materials 0.000 description 5
229910001128 Sn alloy Inorganic materials 0.000 description 5
229910000838 Al alloy Inorganic materials 0.000 description 4
XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
229910001297 Zn alloy Inorganic materials 0.000 description 4
230000015572 biosynthetic process Effects 0.000 description 3
238000005238 degreasing Methods 0.000 description 3
238000010586 diagram Methods 0.000 description 3
238000005554 pickling Methods 0.000 description 3
230000003746 surface roughness Effects 0.000 description 3
229910000570 Cupronickel Inorganic materials 0.000 description 2
ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
229910052782 aluminium Inorganic materials 0.000 description 2
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
230000000052 comparative effect Effects 0.000 description 2
230000008602 contraction Effects 0.000 description 2
230000007423 decrease Effects 0.000 description 2
230000006866 deterioration Effects 0.000 description 2
238000005516 engineering process Methods 0.000 description 2
230000017525 heat dissipation Effects 0.000 description 2
229910052742 iron Inorganic materials 0.000 description 2
239000000203 mixture Substances 0.000 description 2
238000000465 moulding Methods 0.000 description 2
229910000679 solder Inorganic materials 0.000 description 2
238000004381 surface treatment Methods 0.000 description 2
229910052718 tin Inorganic materials 0.000 description 2
229910052725 zinc Inorganic materials 0.000 description 2
239000011701 zinc Substances 0.000 description 2
229910018134 Al-Mg Inorganic materials 0.000 description 1
229910018467 Al—Mg Inorganic materials 0.000 description 1
229920001342 Bakelite® Polymers 0.000 description 1
229910017827 Cu—Fe Inorganic materials 0.000 description 1
229910020816 Sn Pb Inorganic materials 0.000 description 1
229910020830 Sn-Bi Inorganic materials 0.000 description 1
229910020922 Sn-Pb Inorganic materials 0.000 description 1
229910018728 Sn—Bi Inorganic materials 0.000 description 1
229910008783 Sn—Pb Inorganic materials 0.000 description 1
QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 1
238000004873 anchoring Methods 0.000 description 1
229910052785 arsenic Inorganic materials 0.000 description 1
238000005452 bending Methods 0.000 description 1
238000004364 calculation method Methods 0.000 description 1
KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical class [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
TVZPLCNGKSPOJA-UHFFFAOYSA-N copper zinc Chemical compound [Cu].[Zn] TVZPLCNGKSPOJA-UHFFFAOYSA-N 0.000 description 1
238000011161 development Methods 0.000 description 1
238000009792 diffusion process Methods 0.000 description 1
230000001747 exhibiting effect Effects 0.000 description 1
JUWSSMXCCAMYGX-UHFFFAOYSA-N gold platinum Chemical compound [Pt].[Au] JUWSSMXCCAMYGX-UHFFFAOYSA-N 0.000 description 1
PQTCMBYFWMFIGM-UHFFFAOYSA-N gold silver Chemical compound [Ag].[Au] PQTCMBYFWMFIGM-UHFFFAOYSA-N 0.000 description 1
-1 gold-silver alloys Chemical class 0.000 description 1
230000020169 heat generation Effects 0.000 description 1
238000002347 injection Methods 0.000 description 1
239000007924 injection Substances 0.000 description 1
238000011835 investigation Methods 0.000 description 1
238000010884 ion-beam technique Methods 0.000 description 1
CJTCBBYSPFAVFL-UHFFFAOYSA-N iridium ruthenium Chemical compound [Ru].[Ir] CJTCBBYSPFAVFL-UHFFFAOYSA-N 0.000 description 1
238000003475 lamination Methods 0.000 description 1
CLDVQCMGOSGNIW-UHFFFAOYSA-N nickel tin Chemical compound [Ni].[Sn] CLDVQCMGOSGNIW-UHFFFAOYSA-N 0.000 description 1
QELJHCBNGDEXLD-UHFFFAOYSA-N nickel zinc Chemical compound [Ni].[Zn] QELJHCBNGDEXLD-UHFFFAOYSA-N 0.000 description 1
230000003287 optical effect Effects 0.000 description 1
SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 1
HWLDNSXPUQTBOD-UHFFFAOYSA-N platinum-iridium alloy Chemical class [Ir].[Pt] HWLDNSXPUQTBOD-UHFFFAOYSA-N 0.000 description 1
238000005498 polishing Methods 0.000 description 1
238000012545 processing Methods 0.000 description 1
238000000926 separation method Methods 0.000 description 1
238000010008 shearing Methods 0.000 description 1
239000010935 stainless steel Substances 0.000 description 1
229910001220 stainless steel Inorganic materials 0.000 description 1
238000003756 stirring Methods 0.000 description 1
239000000126 substance Substances 0.000 description 1
239000002335 surface treatment layer Substances 0.000 description 1
239000010409 thin film Substances 0.000 description 1
238000012546 transfer Methods 0.000 description 1
230000000007 visual effect Effects 0.000 description 1

Images

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
- H01L23/49582—Metallic layers on lead frames
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/60—Electroplating characterised by the structure or texture of the layers
- C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49548—Cross section geometry
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Chemical Kinetics & Catalysis (AREA)
Electrochemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Geometry (AREA)
Lead Frames For Integrated Circuits (AREA)

JP2018518662A 2016-12-27 2017-12-19 リードフレーム材およびその製造方法ならびに半導体パッケージ Active JP6479265B2 (ja)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
JP2016253968		2016-12-27
JP2016253968		2016-12-27
PCT/JP2017/045451 WO2018123708A1 (fr)	2016-12-27	2017-12-19	Élément de grille de connexion et son procédé de fabrication et boîtier à semi-conducteur

Publications (2)

Publication Number	Publication Date
JPWO2018123708A1 JPWO2018123708A1 (ja)	2018-12-27
JP6479265B2 true JP6479265B2 (ja)	2019-03-06

Family

ID=62707235

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2018518662A Active JP6479265B2 (ja)	2016-12-27	2017-12-19	リードフレーム材およびその製造方法ならびに半導体パッケージ

Country Status (5)

Country	Link
JP (1)	JP6479265B2 (fr)
KR (1)	KR102482396B1 (fr)
CN (1)	CN109937479B (fr)
TW (1)	TWI762546B (fr)
WO (1)	WO2018123708A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP6805217B2 (ja) *	2018-10-18	2020-12-23	Ｊｘ金属株式会社	導電性材料、成型品及び電子部品
JP7014695B2 (ja) *	2018-10-18	2022-02-01	Ｊｘ金属株式会社	導電性材料、成型品及び電子部品
CN117043940A (zh) *	2021-07-16	2023-11-10	古河电气工业株式会社	引线框架材料及其制造方法、以及半导体封装
WO2023286697A1 (fr) *	2021-07-16	2023-01-19	古河電気工業株式会社	Matériau de grille de connexion et son procédé de production, et boîtier de semi-conducteur

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2543619B2 (ja)	1990-09-05	1996-10-16	新光電気工業株式会社	半導体装置用リ―ドフレ―ム
JP3228789B2 (ja)	1992-07-11	2001-11-12	新光電気工業株式会社	樹脂用インサート部材の製造方法
JP2732490B2 (ja) *	1994-03-25	1998-03-30	日鉱金属株式会社	電子機器用高力高導電性銅合金の製造方法
US5554569A (en) *	1994-06-06	1996-09-10	Motorola, Inc.	Method and apparatus for improving interfacial adhesion between a polymer and a metal
JP4168077B2 (ja) *	2006-07-21	2008-10-22	株式会社神戸製鋼所	酸化膜密着性に優れた電気電子部品用銅合金板
KR101241735B1 (ko) *	2008-09-05	2013-03-08	엘지이노텍 주식회사	리드 프레임 및 그 제조방법
JP4892033B2 (ja) *	2009-05-13	2012-03-07	日立ケーブルプレシジョン株式会社	リードフレームの製造方法
KR101113891B1 (ko) *	2009-10-01	2012-02-29	삼성테크윈 주식회사	리드 프레임 및 리드 프레임 제조 방법
JP5863174B2 (ja) *	2012-03-01	2016-02-16	ルネサスエレクトロニクス株式会社	半導体装置の製造方法
JP5204908B1 (ja) *	2012-03-26	2013-06-05	Ｊｘ日鉱日石金属株式会社	キャリア付銅箔、キャリア付銅箔の製造方法、プリント配線板用キャリア付銅箔及びプリント配線板
TWI557750B (zh) *	2014-02-05	2016-11-11	Furukawa Electric Co Ltd	Electrical contact material and manufacturing method thereof
JP5766318B2 (ja) *	2014-02-17	2015-08-19	株式会社三井ハイテック	リードフレーム

2017
- 2017-12-19 WO PCT/JP2017/045451 patent/WO2018123708A1/fr active Application Filing
- 2017-12-19 JP JP2018518662A patent/JP6479265B2/ja active Active
- 2017-12-19 CN CN201780068101.4A patent/CN109937479B/zh active Active
- 2017-12-19 KR KR1020197013787A patent/KR102482396B1/ko active IP Right Grant
- 2017-12-25 TW TW106145512A patent/TWI762546B/zh active

Also Published As

Publication number	Publication date
TW201830627A (zh)	2018-08-16
CN109937479B (zh)	2023-01-13
CN109937479A (zh)	2019-06-25
KR20190096964A (ko)	2019-08-20
WO2018123708A1 (fr)	2018-07-05
KR102482396B1 (ko)	2022-12-28
TWI762546B (zh)	2022-05-01
JPWO2018123708A1 (ja)	2018-12-27

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