JP2013232693A - 半導体装置用ボンディングワイヤ - Google Patents
半導体装置用ボンディングワイヤ Download PDFInfo
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- JP2013232693A JP2013232693A JP2013170489A JP2013170489A JP2013232693A JP 2013232693 A JP2013232693 A JP 2013232693A JP 2013170489 A JP2013170489 A JP 2013170489A JP 2013170489 A JP2013170489 A JP 2013170489A JP 2013232693 A JP2013232693 A JP 2013232693A
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- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
- H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/85399—Material
- H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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Abstract
【解決手段】 銅を主成分とする芯材と、該芯材の上に芯材と異なる組成の導電性金属の表皮層を有するボンディングワイヤであって、前記表皮層の主成分が、金、パラジウム、白金、ロジウム、銀又はニッケルから選ばれる1種以上であり、前記表皮層内にワイヤ径方向に主成分金属の少なくとも1種と銅の濃度勾配を有する領域が存在し、前記表皮層の表面側に、金、パラジウム、白金、ロジウム、銀又はニッケルの2種以上を0.1mol%以上の均一濃度で含有する合金の最表領域が存在することを特徴とする半導体装置用ボンディングワイヤである。
【選択図】 なし
Description
(1) 銅を主成分とする芯材と、該芯材の上に芯材と異なる組成の導電性金属の表皮層を有するボンディングワイヤであって、前記表皮層の主成分が、金、パラジウム、白金、ロジウム、銀又はニッケルから選ばれる2種以上であり、前記表皮層内にワイヤ径方向に主成分金属又は銅の一方又は双方の濃度勾配を有する部位が存在することを特徴とする半導体装置用ボンディングワイヤ。
(2) 銅を主成分とする芯材と、該芯材の上に芯材と異なる組成の導電性金属の表皮層を有するボンディングワイヤであって、前記表皮層の主成分が、金、パラジウム、白金、ロジウム、銀又はニッケルから選ばれる2種以上であり、前記表皮層内にワイヤ径方向に主成分金属又は銅の一方又は双方の濃度勾配を有する部位が存在すると共に、表皮層の主成分の少なくとも1種がワイヤ径方向に増加と減少の両方を有することを特徴とする半導体装置用ボンディングワイヤ。
(3)前記表皮層の表面側に、さらに金、パラジウム、白金、ロジウム、銀又はニッケルの単一金属領域を有する(1)又は(2)に記載の半導体装置用ボンディングワイヤ。
(4)前記表皮層の内部に、金、パラジウム、白金、ロジウム、銀又はニッケルの単一金属領域を有する(1)又は(2)に記載の半導体装置用ボンディングワイヤ。
(5)銅を主成分とする芯材と、該芯材の上に芯材と異なる組成の導電性金属の表皮層を有するボンディングワイヤであって、前記表皮層の表面側に、銅の単一又は30mol%以上銅を含有する合金からなる最表領域を有し、前記表皮層の主成分が、金、パラジウム、白金、ロジウム、銀又はニッケルから選ばれる1種以上であり、前記表皮層内にワイヤ径方向に主成分金属の少なくとも1種と銅がワイヤ径方向に増加と減少の両方の濃度勾配を有する領域が存在することを特徴とする半導体装置用ボンディングワイヤ。
(6)銅を主成分とする芯材と、該芯材の上に芯材と異なる組成の導電性金属の表皮層を有するボンディングワイヤであって、前記表皮層の主成分が、金、パラジウム、白金、ロジウム、銀又はニッケルから選ばれる1種以上であり、前記表皮層内にワイヤ径方向に主成分金属の少なくとも1種と銅の濃度勾配を有する領域が存在し、前記表皮層の表面側に、金、パラジウム、白金、ロジウム、銀又はニッケルの2種以上を0.1mol%以上の均一濃度で含有する合金の最表領域が存在することを特徴とする半導体装置用ボンディングワイヤ。
(7) 前記表皮層内に、金属間化合物を含有する(1)〜(6)のいずれかに記載の半導体装置用ボンディングワイヤ。
(8) 前記銅を主成分とする芯材が、Ca、Sr、Be、Al又は希土類元素から選ばれる1種以上を総計で1〜300質量ppm含有する(1)〜(7)のいずれかに記載の半導体装置用ボンディングワイヤ。
(9) 前記銅を主成分とする芯材が、銀、スズ又は金の1種以上を総計で0.1〜10質量%含有する(1)〜(8)のいずれかに記載の半導体装置用ボンディングワイヤ。
Claims (9)
- 銅を主成分とする芯材と、該芯材の上に芯材と異なる組成の導電性金属の表皮層を有するボンディングワイヤであって、前記表皮層の主成分が、金、パラジウム、白金、ロジウム、銀又はニッケルから選ばれる2種以上であり、前記表皮層内にワイヤ径方向に主成分金属又は銅の一方又は双方の濃度勾配を有する部位が存在することを特徴とする半導体装置用ボンディングワイヤ。
- 銅を主成分とする芯材と、該芯材の上に芯材と異なる組成の導電性金属の表皮層を有するボンディングワイヤであって、前記表皮層の主成分が、金、パラジウム、白金、ロジウム、銀又はニッケルから選ばれる2種以上であり、前記表皮層内にワイヤ径方向に主成分金属又は銅の一方又は双方の濃度勾配を有する部位が存在すると共に、表皮層の主成分の少なくとも1種がワイヤ径方向に増加と減少の両方を有することを特徴とする半導体装置用ボンディングワイヤ。
- 前記表皮層の表面側に、さらに金、パラジウム、白金、ロジウム、銀又はニッケルの単一金属領域を有する請求項1又は2に記載の半導体装置用ボンディングワイヤ。
- 前記表皮層の内部に、金、パラジウム、白金、ロジウム、銀又はニッケルの単一金属領域を有する請求項1又は2に記載の半導体装置用ボンディングワイヤ。
- 銅を主成分とする芯材と、該芯材の上に芯材と異なる組成の導電性金属の表皮層を有するボンディングワイヤであって、前記表皮層の表面側に、銅の単一又は30mol%以上銅を含有する合金からなる最表領域を有し、前記表皮層の主成分が、金、パラジウム、白金、ロジウム、銀又はニッケルから選ばれる1種以上であり、前記表皮層内にワイヤ径方向に主成分金属の少なくとも1種と銅がワイヤ径方向に増加と減少の両方の濃度勾配を有する領域が存在することを特徴とする半導体装置用ボンディングワイヤ。
- 銅を主成分とする芯材と、該芯材の上に芯材と異なる組成の導電性金属の表皮層を有するボンディングワイヤであって、前記表皮層の主成分が、金、パラジウム、白金、ロジウム、銀又はニッケルから選ばれる1種以上であり、前記表皮層内にワイヤ径方向に主成分金属の少なくとも1種と銅の濃度勾配を有する領域が存在し、前記表皮層の表面側に、金、パラジウム、白金、ロジウム、銀又はニッケルの2種以上を0.1mol%以上の均一濃度で含有する合金の最表領域が存在することを特徴とする半導体装置用ボンディングワイヤ。
- 前記表皮層内に、金属間化合物を含有する請求項1〜6のいずれかに記載の半導体装置用ボンディングワイヤ。
- 前記銅を主成分とする芯材が、Ca、Sr、Be、Al又は希土類元素から選ばれる1種以上を総計で1〜300質量ppm含有する請求項1〜7のいずれかに記載の半導体装置用ボンディングワイヤ。
- 前記銅を主成分とする芯材が、銀、スズ又は金の1種以上を総計で0.1〜10質量%含有する請求項1〜8のいずれかに記載の半導体装置用ボンディングワイヤ。
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US10468370B2 (en) | 2015-07-23 | 2019-11-05 | Nippon Micrometal Corporation | Bonding wire for semiconductor device |
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KR20160098397A (ko) * | 2013-12-17 | 2016-08-18 | 신닛테츠스미킹 마테리알즈 가부시키가이샤 | 반도체 장치용 본딩 와이어 |
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TWI700754B (zh) * | 2013-12-17 | 2020-08-01 | 日商日鐵化學材料股份有限公司 | 半導體裝置用接合線 |
JP2017005240A (ja) * | 2015-06-15 | 2017-01-05 | 日鉄住金マイクロメタル株式会社 | 半導体装置用ボンディングワイヤ |
US10414002B2 (en) | 2015-06-15 | 2019-09-17 | Nippon Micrometal Corporation | Bonding wire for semiconductor device |
US10737356B2 (en) | 2015-06-15 | 2020-08-11 | Nippon Micrometal Corporation | Bonding wire for semiconductor device |
US10468370B2 (en) | 2015-07-23 | 2019-11-05 | Nippon Micrometal Corporation | Bonding wire for semiconductor device |
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