JP2011077519A - リードフレーム及びその製造方法 - Google Patents
リードフレーム及びその製造方法 Download PDFInfo
- Publication number
- JP2011077519A JP2011077519A JP2010201579A JP2010201579A JP2011077519A JP 2011077519 A JP2011077519 A JP 2011077519A JP 2010201579 A JP2010201579 A JP 2010201579A JP 2010201579 A JP2010201579 A JP 2010201579A JP 2011077519 A JP2011077519 A JP 2011077519A
- Authority
- JP
- Japan
- Prior art keywords
- plating layer
- lead frame
- protective
- rough surface
- lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 238000007747 plating Methods 0.000 claims abstract description 275
- 239000010949 copper Substances 0.000 claims abstract description 114
- 230000001681 protective effect Effects 0.000 claims abstract description 100
- 239000004065 semiconductor Substances 0.000 claims abstract description 56
- 230000003746 surface roughness Effects 0.000 claims abstract description 33
- 229910052802 copper Inorganic materials 0.000 claims abstract description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 11
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 51
- 239000010931 gold Substances 0.000 claims description 49
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 49
- 238000000034 method Methods 0.000 claims description 31
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 22
- 229910052737 gold Inorganic materials 0.000 claims description 16
- 229910052763 palladium Inorganic materials 0.000 claims description 15
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 14
- 238000009713 electroplating Methods 0.000 claims description 12
- 229910052759 nickel Inorganic materials 0.000 claims description 12
- 229910000365 copper sulfate Inorganic materials 0.000 claims description 11
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims description 11
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 229910001020 Au alloy Inorganic materials 0.000 claims description 6
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 6
- 229910001252 Pd alloy Inorganic materials 0.000 claims description 6
- JZCCFEFSEZPSOG-UHFFFAOYSA-L copper(II) sulfate pentahydrate Chemical compound O.O.O.O.O.[Cu+2].[O-]S([O-])(=O)=O JZCCFEFSEZPSOG-UHFFFAOYSA-L 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 239000002994 raw material Substances 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 227
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 230000001771 impaired effect Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 229920006336 epoxy molding compound Polymers 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000032798 delamination Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
- H01L23/49582—Metallic layers on lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3142—Sealing arrangements between parts, e.g. adhesion promotors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49548—Cross section geometry
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29005—Structure
- H01L2224/29007—Layer connector smaller than the underlying bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/3201—Structure
- H01L2224/32012—Structure relative to the bonding area, e.g. bond pad
- H01L2224/32014—Structure relative to the bonding area, e.g. bond pad the layer connector being smaller than the bonding area, e.g. bond pad
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48095—Kinked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
- H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48638—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/48639—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
- H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48838—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/48839—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
- H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/85439—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01028—Nickel [Ni]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01088—Radium [Ra]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Geometry (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
【解決手段】リードフレームであって、半導体チップが搭載されるダイパッドと、半導体チップに接続されるように配置される複数のリード部と、ダイパッド及びリード部の少なくとも片面に形成されるメッキ層とを備え、メッキ層が所定の表面粗さを有し、メッキ層が、銅(Cu)を含有する粗面Cuメッキ層と、該粗面Cuメッキ層上に形成される保護メッキ層とを含むような該リードフレーム及びその製造方法を提供する。
【選択図】図1
Description
、互いに密接に接触しているモールド部とリードフレームとの間に剥離が生じて、結果的に、パッケージの構造的及び機能的信頼性が損なわれる。
110 ダイパッド
120 リード部
150 メッキ層
151 粗面Cuメッキ層
152 保護メッキ層
170 アウターフレーム
180 支持部
200 半導体チップ
220 ボンディングワイヤ
250 モールド部
300 半導体パッケージ
Claims (22)
- リードフレームであって、
半導体チップが搭載されるダイパッドと、
前記半導体チップに接続されるように配置される複数のリード部と、
前記ダイパッド及び前記各リード部の少なくとも片面に形成されるメッキ層とを備え、
前記メッキ層が、所定の表面粗さを有し、
前記メッキ層が、銅(Cu)を含有する粗面Cuメッキ層と、該粗面Cuメッキ層上に形成される保護メッキ層とを含むことを特徴とするリードフレーム。 - 前記保護メッキ層が、Cuを含有することを特徴とする請求項1に記載のリードフレーム。
- 前記保護メッキ層が、
ニッケル(Ni)またはNi合金を含有するNiメッキ層と、
前記Niメッキ層上に形成され、パラジウム(Pd)またはPd合金を含有するPdメッキ層と、
前記Pdメッキ層上に形成され、金(Au)またはAu合金を含有するAuメッキ層とを含むことを特徴とする請求項1に記載のリードフレーム。 - 前記保護メッキ層の厚さが、前記粗面Cuメッキ層の厚さより大きいことを特徴とする請求項1に記載のリードフレーム。
- 前記ダイパッド及び前記リード部が、単体として一体化されていることを特徴とする請求項1に記載のリードフレーム。
- 前記保護メッキ層の厚さが、0.125μmないし1.0μmであることを特徴とする請求項1に記載のリードフレーム。
- 前記保護メッキ層の表面粗さ(Ra)が、0.1μmないし0.5μmであることを特徴とする請求項1に記載のリードフレーム。
- 前記リード部の上部の前記保護メッキ層上に、銀(Ag)メッキ層、金(Au)メッキ層、及びニッケル(Ni)/パラジウム(Pd)/金(Au)積層構造を有するメッキ層からなる群から選択されるメッキ層をさらに備えることを特徴とする請求項2に記載のリードフレーム。
- 前記保護メッキ層上に、Ni/Pd/Au積層構造を有するメッキ層をさらに備えることを特徴とする請求項2に記載のリードフレーム。
- リードフレームの製造方法であって、
(a)原料基板をパターニングして、ダイパッド及び複数のリード部を形成するステップと、
(b)所定の表面粗さを有しかつ銅を含有する粗面Cuメッキ層を前記ダイパッド及び前記各リード部の少なくとも片面に形成し、前記粗面Cuメッキ層上に保護メッキ層を形成するステップとを含むことを特徴とする方法。 - 前記粗面Cuメッキ層が、電解メッキ法を用いて硫酸銅溶液中で形成されることを特徴とする請求項10に記載の方法。
- 前記硫酸銅溶液が、硫酸及び硫酸銅5水和物(CuSO4・5H2O)を含有することを特徴とする請求項11に記載の方法。
- 前記硫酸銅溶液中の前記硫酸の濃度が、20ml/lないし60ml/lであることを特徴とする請求項11に記載の方法。
- 前記硫酸銅溶液中の前記硫酸銅5水和物(CuSO4・5H2O)の濃度が、10g/lないし30g/lであることを特徴とする請求項11に記載の方法。
- 前記粗面Cuメッキ層が、5秒ないし20秒間の電流印加によって形成されることを特徴とする請求項11に記載の方法。
- 前記保護メッキ層が、Cuを含有することを特徴とする請求項10に記載の方法。
- 前記保護メッキ層が、
ニッケル(Ni)またはNi合金を含有するNiメッキ層と、
前記Niメッキ層上に形成され、パラジウム(Pd)またはPd合金を含有するPdメッキ層と、
前記Pdメッキ層上に形成され、金(Au)またはAu合金を含有するAuメッキ層とを含むことを特徴とする請求項10に記載のリードフレームの製造方法。 - 前記保護メッキ層の厚さが、前記粗面Cuメッキ層の厚さより大きいことを特徴とする請求項10に記載のリードフレームの製造方法。
- 前記保護メッキ層の厚さが、0.125μmないし1.0μmであることを特徴とする請求項10に記載のリードフレームの製造方法。
- 前記保護メッキ層の表面粗さ(Ra)が、0.1μmないし0.5μmであることを特徴とする請求項10に記載のリードフレームの製造方法。
- 前記リード部の上部の保護メッキ層上に、銀(Ag)メッキ層、金(Au)メッキ層、及びニッケル(Ni)/パラジウム(Pd)/金(Au)積層構造を有するメッキ層からなる群から選択されるメッキ層を形成するステップをさらに含むことを特徴とする請求項16に記載のリードフレームの製造方法。
- 前記保護メッキ層上に、Ni/Pd/Au積層構造を有するメッキ層を形成するステップをさらに含むことを特徴とする請求項16に記載のリードフレームの製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090094051A KR101113891B1 (ko) | 2009-10-01 | 2009-10-01 | 리드 프레임 및 리드 프레임 제조 방법 |
KR10-2009-0094051 | 2009-10-01 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011077519A true JP2011077519A (ja) | 2011-04-14 |
JP5893826B2 JP5893826B2 (ja) | 2016-03-23 |
Family
ID=43822562
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010201579A Active JP5893826B2 (ja) | 2009-10-01 | 2010-09-09 | リードフレーム及びその製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8319340B2 (ja) |
JP (1) | JP5893826B2 (ja) |
KR (1) | KR101113891B1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017179447A1 (ja) * | 2016-04-12 | 2017-10-19 | 古河電気工業株式会社 | リードフレーム材およびその製造方法 |
WO2018123708A1 (ja) * | 2016-12-27 | 2018-07-05 | 古河電気工業株式会社 | リードフレーム材およびその製造方法ならびに半導体パッケージ |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120119342A1 (en) * | 2010-11-11 | 2012-05-17 | Mediatek Inc. | Advanced quad flat non-leaded package structure and manufacturing method thereof |
KR101802850B1 (ko) * | 2011-01-11 | 2017-11-29 | 해성디에스 주식회사 | 반도체 패키지 |
US9230928B2 (en) * | 2011-09-12 | 2016-01-05 | Conexant Systems, Inc. | Spot plated leadframe and IC bond pad via array design for copper wire |
KR101646094B1 (ko) * | 2011-12-12 | 2016-08-05 | 해성디에스 주식회사 | 리드 프레임 및 이를 이용하여 제조된 반도체 패키지 |
DE102013204883A1 (de) * | 2013-03-20 | 2014-09-25 | Robert Bosch Gmbh | Verfahren zur Kontaktierung eines elektrischen und/oder elektronischen Bauelements und korrespondierendes Elektronikmodul |
KR101319441B1 (ko) * | 2013-05-23 | 2013-10-17 | 엘지이노텍 주식회사 | 리드프레임 |
JP6125332B2 (ja) * | 2013-05-31 | 2017-05-10 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP6621681B2 (ja) * | 2016-02-17 | 2019-12-18 | 株式会社三井ハイテック | リードフレーム及びその製造方法、並びに半導体パッケージ |
JP7016677B2 (ja) * | 2017-11-21 | 2022-02-07 | 新光電気工業株式会社 | リードフレーム、半導体装置、リードフレームの製造方法 |
CN110265376A (zh) | 2018-03-12 | 2019-09-20 | 意法半导体股份有限公司 | 引线框架表面精整 |
US11545418B2 (en) * | 2018-10-24 | 2023-01-03 | Texas Instruments Incorporated | Thermal capacity control for relative temperature-based thermal shutdown |
US11735512B2 (en) | 2018-12-31 | 2023-08-22 | Stmicroelectronics International N.V. | Leadframe with a metal oxide coating and method of forming the same |
KR102312529B1 (ko) * | 2020-03-10 | 2021-10-15 | 엔티피 주식회사 | 리드프레임 제조방법 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0629439A (ja) * | 1992-07-11 | 1994-02-04 | Shinko Electric Ind Co Ltd | 樹脂用インサート部材 |
JPH09148508A (ja) * | 1995-11-29 | 1997-06-06 | Nippon Denkai Kk | 半導体装置用リードフレーム及びこれを用いた樹脂封止型半導体装置 |
JPH118341A (ja) * | 1997-06-18 | 1999-01-12 | Mitsui High Tec Inc | 半導体装置用リードフレーム |
JP2001110971A (ja) * | 1999-10-01 | 2001-04-20 | Samsung Aerospace Ind Ltd | 半導体パッケージ用リードフレーム及びその製造方法 |
JP2002083917A (ja) * | 2000-06-28 | 2002-03-22 | Noge Denki Kogyo:Kk | 表面に突起を有するリードフレーム、リードフレームの製造方法、半導体装置、および、半導体装置の製造方法 |
JP2002299538A (ja) * | 2001-03-30 | 2002-10-11 | Dainippon Printing Co Ltd | リードフレーム及びそれを用いた半導体パッケージ |
JP2005213573A (ja) * | 2004-01-29 | 2005-08-11 | Matsushita Electric Ind Co Ltd | 粗化銅めっき液及びそのめっき方法 |
JP2006080576A (ja) * | 2005-12-05 | 2006-03-23 | Shinko Electric Ind Co Ltd | パッケージ部品及びその製造方法ならびに半導体パッケージ |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09283688A (ja) | 1996-04-17 | 1997-10-31 | Kobe Steel Ltd | 銅被覆リードフレーム材 |
JP2001127229A (ja) * | 1999-11-01 | 2001-05-11 | Nec Corp | リードフレーム及びそのリードフレームを用いた樹脂封止型半導体装置 |
JP3841768B2 (ja) * | 2003-05-22 | 2006-11-01 | 新光電気工業株式会社 | パッケージ部品及び半導体パッケージ |
JP4857594B2 (ja) * | 2005-04-26 | 2012-01-18 | 大日本印刷株式会社 | 回路部材、及び回路部材の製造方法 |
KR20100103015A (ko) * | 2009-03-12 | 2010-09-27 | 엘지이노텍 주식회사 | 리드 프레임 및 그 제조방법 |
-
2009
- 2009-10-01 KR KR1020090094051A patent/KR101113891B1/ko active IP Right Grant
-
2010
- 2010-09-09 JP JP2010201579A patent/JP5893826B2/ja active Active
- 2010-09-16 US US12/883,481 patent/US8319340B2/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0629439A (ja) * | 1992-07-11 | 1994-02-04 | Shinko Electric Ind Co Ltd | 樹脂用インサート部材 |
JPH09148508A (ja) * | 1995-11-29 | 1997-06-06 | Nippon Denkai Kk | 半導体装置用リードフレーム及びこれを用いた樹脂封止型半導体装置 |
JPH118341A (ja) * | 1997-06-18 | 1999-01-12 | Mitsui High Tec Inc | 半導体装置用リードフレーム |
JP2001110971A (ja) * | 1999-10-01 | 2001-04-20 | Samsung Aerospace Ind Ltd | 半導体パッケージ用リードフレーム及びその製造方法 |
JP2002083917A (ja) * | 2000-06-28 | 2002-03-22 | Noge Denki Kogyo:Kk | 表面に突起を有するリードフレーム、リードフレームの製造方法、半導体装置、および、半導体装置の製造方法 |
JP2002299538A (ja) * | 2001-03-30 | 2002-10-11 | Dainippon Printing Co Ltd | リードフレーム及びそれを用いた半導体パッケージ |
JP2005213573A (ja) * | 2004-01-29 | 2005-08-11 | Matsushita Electric Ind Co Ltd | 粗化銅めっき液及びそのめっき方法 |
JP2006080576A (ja) * | 2005-12-05 | 2006-03-23 | Shinko Electric Ind Co Ltd | パッケージ部品及びその製造方法ならびに半導体パッケージ |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017179447A1 (ja) * | 2016-04-12 | 2017-10-19 | 古河電気工業株式会社 | リードフレーム材およびその製造方法 |
JPWO2017179447A1 (ja) * | 2016-04-12 | 2018-04-19 | 古河電気工業株式会社 | リードフレーム材およびその製造方法 |
TWI751150B (zh) * | 2016-04-12 | 2022-01-01 | 日商古河電氣工業股份有限公司 | 引線框架材及其製造方法 |
WO2018123708A1 (ja) * | 2016-12-27 | 2018-07-05 | 古河電気工業株式会社 | リードフレーム材およびその製造方法ならびに半導体パッケージ |
JPWO2018123708A1 (ja) * | 2016-12-27 | 2018-12-27 | 古河電気工業株式会社 | リードフレーム材およびその製造方法ならびに半導体パッケージ |
KR20190096964A (ko) * | 2016-12-27 | 2019-08-20 | 후루카와 덴끼고교 가부시키가이샤 | 리드 프레임재 및 이의 제조 방법 및 반도체 패키지 |
TWI762546B (zh) * | 2016-12-27 | 2022-05-01 | 日商古河電氣工業股份有限公司 | 導線架材料及其製造方法以及半導體封裝體 |
KR102482396B1 (ko) * | 2016-12-27 | 2022-12-28 | 후루카와 덴끼고교 가부시키가이샤 | 리드 프레임재 및 이의 제조 방법 및 반도체 패키지 |
Also Published As
Publication number | Publication date |
---|---|
US8319340B2 (en) | 2012-11-27 |
US20110079887A1 (en) | 2011-04-07 |
KR101113891B1 (ko) | 2012-02-29 |
KR20110036402A (ko) | 2011-04-07 |
JP5893826B2 (ja) | 2016-03-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5893826B2 (ja) | リードフレーム及びその製造方法 | |
JP4032063B2 (ja) | 半導体装置の製造方法 | |
JPH11340409A (ja) | リードフレームおよびその製造方法ならびに樹脂封止型半導体装置およびその製造方法 | |
TWI479626B (zh) | 導線架基板及其製造方法以及半導體裝置 | |
TWI322493B (en) | Leadframe strip, semiconductor device, and the method of fabricating a leadframe | |
JP2014007363A (ja) | 半導体装置の製造方法および半導体装置 | |
JP2005057067A (ja) | 半導体装置およびその製造方法 | |
TW201423917A (zh) | 樹脂密封型半導體裝置及其製造方法 | |
JP2000277672A (ja) | リードフレーム及びその製法と半導体デバイス | |
JP2001110971A (ja) | 半導体パッケージ用リードフレーム及びその製造方法 | |
US20060006510A1 (en) | Plastic encapsulated semiconductor device with reliable down bonds | |
US20080174005A1 (en) | Electronic device and method for manufacturing electronic device | |
JP4329678B2 (ja) | 半導体装置に用いるリードフレームの製造方法 | |
KR101646094B1 (ko) | 리드 프레임 및 이를 이용하여 제조된 반도체 패키지 | |
KR20120081519A (ko) | 리드 프레임 및 이를 구비한 반도체 패키지 | |
JP2003309241A (ja) | リードフレーム部材とリードフレーム部材の製造方法、及び該リードフレーム部材を用いた半導体パッケージとその製造方法 | |
JP2005244033A (ja) | 電極パッケージ及び半導体装置 | |
JP2007048978A (ja) | 半導体装置及びその製造方法 | |
JP4620584B2 (ja) | 回路部材の製造方法 | |
JP2012049323A (ja) | リードフレーム及びこれを用いた半導体装置並びにその製造方法 | |
JP2006147918A (ja) | 半導体装置 | |
WO2010143081A1 (en) | Enhanced integrated circuit package | |
JP6913993B2 (ja) | 半導体装置用基板、半導体装置の製造方法 | |
JP4018853B2 (ja) | ターミナルランドフレーム | |
JP6889531B2 (ja) | 半導体装置用基板およびその製造方法、半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20120223 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130628 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20140527 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20141024 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20141104 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150204 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150519 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150819 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160216 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160225 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5893826 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |