WO2010010783A1 - Elément de conversion thermoélectrique - Google Patents

Elément de conversion thermoélectrique Download PDF

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Publication number
WO2010010783A1
WO2010010783A1 PCT/JP2009/061593 JP2009061593W WO2010010783A1 WO 2010010783 A1 WO2010010783 A1 WO 2010010783A1 JP 2009061593 W JP2009061593 W JP 2009061593W WO 2010010783 A1 WO2010010783 A1 WO 2010010783A1
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thermoelectric conversion
metal
conversion element
silver
semiconductor
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PCT/JP2009/061593
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English (en)
Japanese (ja)
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浩明 安藤
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コニカミノルタホールディングス株式会社
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Priority to JP2010521654A priority Critical patent/JPWO2010010783A1/ja
Publication of WO2010010783A1 publication Critical patent/WO2010010783A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device

Definitions

  • the present invention relates to a thermoelectric conversion element using a thermoelectric effect such as the Seebeck effect.
  • thermoelectric conversion materials in particular Bi-Te based thermoelectric conversion materials used near room temperature, are very brittle, and it is difficult to impart flexibility to thermoelectric conversion elements.
  • methods such as providing a thin thermoelectric conversion element on a resin and methods for imparting flexibility by using a flexible material for an electrode have been studied, the effect is the level of improvement in heat resistance.
  • the current situation is that sufficient flexibility and thermoelectric conversion capacity are not achieved at the same time.
  • thermoelectric conversion semiconductor such as Bi-Te has a low dimensional structure such as a thin film or a wire (hereinafter also referred to as semiconductor nanowire), thereby increasing the figure of merit (ZT). It is expected that it will be possible, and there are also expectations for flexibility. However, when used in power generation applications, it is necessary to extract a large current, and an increase in internal resistance due to thinning or structure reduction is incompatible with power generation applications.
  • Bundling the semiconductor nanowires is considered to be a method that can achieve both high conversion efficiency and extraction of a large current. In this case, it is necessary to have a dense structure with improved orientation. However, high flexibility was not achieved, and production was also difficult.
  • thermoelectric conversion member The remainder is semiconducting and has a large electric resistance, and no electromotive force can be obtained.
  • SWCNT for the thermoelectric conversion member, it is necessary to purify and use SWCNT or to form only metallic SWCNT directly on the substrate while controlling the reaction. It is a big problem practically to use a method with these restrictions on manufacture.
  • the present invention has been made in view of the above problems, and its purpose is to provide a thermoelectric conversion element that can suppress defects caused by stress, has excellent flexibility, and has high thermoelectric conversion capability. It is to provide.
  • thermoelectric conversion element comprising a thermoelectric conversion semiconductor and an aggregate of metal fibers having an aspect ratio of 10 or more and a thickness of 2 nm or more and 500 nm or less.
  • thermoelectric conversion element according to 1, wherein the aggregate of the thermoelectric conversion semiconductor and the metal fiber is sandwiched between a pair of electrodes.
  • thermoelectric conversion element as described in 1 or 2 above, wherein the aggregate of metal fibers has a structure in which layered thermoelectric conversion semiconductors are laminated.
  • thermoelectric conversion element by giving sufficient stress relaxation ability, heat transfer ability and electrical conductivity to an aggregate of metal fibers (hereinafter also referred to as current-carrying parts) to the thermoelectric conversion element, defects caused in the element due to stress can be prevented.
  • the thermoelectric conversion element which can be suppressed was able to be provided.
  • thermoelectric conversion element of this invention It is a schematic sectional drawing which shows an example of a structure of the thermoelectric conversion element of this invention. It is a schematic sectional drawing which shows another example of a structure of the thermoelectric conversion element of this invention.
  • thermoelectric conversion semiconductor As a result of intensive studies in view of the above problems, the present inventor has a thermoelectric conversion semiconductor and an aggregate of metal fibers having an aspect ratio of 10 or more and a thickness of 2 nm or more and 500 nm or less.
  • thermoelectric conversion element defects caused by stress can be suppressed, and a thermoelectric conversion element having excellent flexibility and high thermoelectric conversion ability can be realized.
  • thermoelectric conversion element of the present invention details of the thermoelectric conversion element of the present invention will be described.
  • thermoelectric conversion element [Configuration of thermoelectric conversion element] The structure of the thermoelectric conversion element of this invention is demonstrated using figures. In addition, the thermoelectric conversion element shown in the following figures shows an example of the thermoelectric conversion element of this invention, and this invention is not limited only to the structure illustrated here.
  • FIG. 1 is a schematic cross-sectional view showing an example of the configuration of the thermoelectric conversion element of the present invention.
  • thermoelectric conversion element 10 an insulating substrate is omitted from the thermoelectric conversion element 10 for convenience of explanation.
  • thermoelectric conversion element 10 shown in FIG. 1, an energization section 13 made of metal fibers 16 is installed between a thermoelectric conversion semiconductor layer 15 mainly made of a thermoelectric conversion semiconductor 14 and the electrode substrates 11 and 12.
  • the energizing portion 13 may be on one side of the thermoelectric conversion semiconductor layer 15, but is preferably present on both sides of the thermoelectric conversion semiconductor layer 15 as shown in FIG. 1 from the viewpoint of stress relaxation.
  • the thermoelectric conversion semiconductor 14 in the text refers to a semiconductor (for example, a Bi—Te compound) that generates a large electromotive force when a temperature difference is applied, as will be described later.
  • the current-carrying portion 13 made of the metal fiber 16 shown in FIG. 1 needs to have sufficient thermal conductivity and electrical conductivity while providing flexibility by forming an appropriate gap.
  • the energization part 13 has a void and has an effect of reducing and dispersing the stress applied to the thermoelectric conversion element.
  • the weakest part for example, the electrodes 11 and 12 and the energizing portion 13 or the junction between the energizing portion 13 and the thermoelectric conversion semiconductor layer 15 are likely to be broken, which causes an increase in electricity and thermal resistance and a decrease in electromotive force.
  • the value can be obtained experimentally, it is generally preferable that the value is not less than 50% by volume and not more than 99% by volume with respect to the total volume of the energizing part 13.
  • the metal fibers constituting the current-carrying part according to the present invention have an aspect ratio (the aspect ratio in the present invention is defined as an average value of the length ratio (A / B) between the major axis A and the minor axis B of individual particles. Large metal particles.
  • metal fibers having an aspect ratio of 10 or more are preferable.
  • the shape of the metal fiber may be any shape such as a whisker shape that is a linear crystal, or a curved wire shape. This is because by using such metal fibers, the number of contact points between the metal fibers constituting the energization portion is reduced, and it is easy to maintain high electrical and thermal conductivity while maintaining flexibility.
  • a metal fiber material called a metal nanowire among metal fibers it is particularly preferable to use a metal fiber material called a metal nanowire among metal fibers.
  • the metal nanowire is a linear structure having a metal element as a main component and refers to a metal fiber having a fine wire structure.
  • metal fibers are formed by stretching molten metal, but metal nanowires are linear structures with diameters from the atomic scale to the nm size, and their thickness is reduced simultaneously with the reduction reaction of metal salts and the like.
  • a general production method is to grow and fiberize the metal as it is.
  • the metal nanowire applied to the present invention preferably has an average length of 3 ⁇ m or more, and more preferably 3 to 500 ⁇ m, since a single metal nanowire forms a long conductive path and a heat conductive path.
  • the relative standard deviation of the length is preferably 40% or less.
  • the average diameter of the metal nanowire is preferably 2 to 500 nm, and more preferably 30 to 200 nm. If the diameter is too large, even if the aspect ratio is large, stress tends to concentrate on a part of the semiconductor interface, and the contact tends to be fragile. In the case of having an appropriate thinness, if the contact area is the same, the stress is dispersed and the contact is stabilized. On the other hand, if it is too thin, the electrical resistance will increase rapidly and the thermoelectric conversion efficiency will decrease, the thermal conductivity of the current-carrying part will deteriorate, and the effective temperature difference of the semiconductor will decrease, which may reduce the electromotive force. .
  • the relative standard deviation of the diameter is preferably 20% or less.
  • the means for producing the metal nanowire there are no particular limitations on the means for producing the metal nanowire, and for example, known means such as a liquid phase method and a gas phase method can be used. Moreover, there is no restriction
  • the method for producing Ag nanowires reported in 1 can produce Ag nanowires easily and in large quantities in an aqueous system, and the conductivity of silver is the largest among metals, so that the production of metal nanowires according to the present invention is possible. It can be preferably applied as a method.
  • a method of forming the produced metal fiber into a sheet can be applied to the production of the current-carrying part using the metal fiber.
  • a slurry containing metal fibers and binder fibers for example, polyvinyl alcohol fibers
  • a slurry containing metal fibers and binder fibers for example, polyvinyl alcohol fibers
  • thermocompression bonding is performed using a heating roller having a surface temperature of about 160 ° C.
  • a continuous sintering furnace in an oxygen-free atmosphere for example, a hydrogen gas atmosphere
  • the metal fibers are heated in a temperature range that does not exceed the melting point of the metal fibers, and the metal fibers are fused to form a metal having voids.
  • the metal fibers constituting the current-carrying part need to have sufficient thermal conductivity and electrical conductivity in addition to having flexibility by containing appropriate gaps.
  • the gap may be filled with air or may be filled with an inert gas. Moreover, a vacuum may be sufficient.
  • a structure in which a highly flexible resin is impregnated is also preferable.
  • the filling volume is treated as a void.
  • a metal composition which comprises the metal fiber which concerns on this invention can comprise from the 1 type or several metal of a noble metal element and a base metal element, it is a noble metal (for example, gold, platinum, silver, palladium) , Rhodium, iridium, ruthenium, osmium, and the like) and at least one metal belonging to the group consisting of iron, cobalt, copper, and tin, and more preferably at least silver from the viewpoint of conductivity.
  • a noble metal for example, gold, platinum, silver, palladium
  • at least one metal belonging to the group consisting of iron, cobalt, copper, and tin and more preferably at least silver from the viewpoint of conductivity.
  • the metal nanowire according to the present invention includes two or more kinds of metal elements, for example, the metal composition may be different between the inside and the surface of the metal nanowire, or the entire metal nanowire has the same metal composition. May be.
  • the following metals should be selected from the data described in the 2007 scientific chronology. Can do. For example, zinc, aluminum, iridium, potassium, gold, silver, tungsten, copper, beryllium, magnesium, molybdenum, and alloys containing these are preferable. Furthermore, aluminum, gold, silver, copper, beryllium, and the like and alloys containing these having a higher thermal conductivity of 200 W / (m ⁇ K) are more preferable.
  • the average value of the length, diameter, and aspect ratio of the metal nanowire can be obtained from an arithmetic average of measured values of individual sample images by taking electron micrographs of a sufficient number of samples.
  • the relative standard deviation of length and diameter is represented by a value obtained by multiplying 100 by the value obtained by dividing the standard deviation of the measured value shown in the following formula by the average value.
  • the number of samples is preferably at least 100 or more, and more preferably 300 or more.
  • thermoelectric conversion semiconductors that constitute the thermoelectric conversion elements together with metal fibers, in addition to bismuth-tellurium (Bi-Te) semiconductors, Si-Ge semiconductors, Pb-Te semiconductors, etc. are applicable. is there. In addition, there are filled skutterudite compounds, boron compounds, zinc antimony, clathrates, pseudogap-type Heusler flower compounds, and the like. Details can be referred to, for example, the description of “Technology for improving efficiency and reliability of thermoelectric conversion systems” (2006, Technical Information Association).
  • dopants for imparting properties as p-type and n-type semiconductors are added to the original material. If high temperature heating and baking are performed after the dopant is added, the content of the dopant becomes non-uniform in the semiconductor and causes adverse effects of surrounding impurities.
  • a current-carrying part made of fibers having a large specific surface area is preferable from this viewpoint because the firing temperature can be lowered.
  • thermoelectric conversion semiconductor layer In addition, the interface between the energization part and the thermoelectric conversion semiconductor needs to be joined so that no electrical resistance or thermal resistance occurs. For this reason, it is preferable that a slight amount of metal such as Ni, Cr, or Mo that improves adhesiveness exists at the interface between the energization portion and the thermoelectric conversion semiconductor.
  • thermoelectric conversion efficiency decreases.
  • thermoelectric conversion ability due to electric resistance or thermal resistance varies as in the following formulas (1) and (2).
  • the electrical resistance and the interfacial thermal resistance lower the conversion efficiency. If the thermal resistance of the metal part is large, the electromotive force tends to decrease.
  • thermoelectric conversion element [Method for producing thermoelectric conversion element] Examples of the method for producing the thermoelectric conversion semiconductor layer in the thermoelectric conversion element of the present invention include the following methods.
  • the electrode can be a general metal electrode. In addition to aluminum, copper, gold, silver, etc., solder, graphite, etc. are also applicable. In the case where the semiconductor layer is sandwiched between metal parts having voids, the metal part can be used as an electrode, and thus it is not always necessary to provide another electrode.
  • ⁇ -type element For modularization for power generation, it is desirable to use a so-called “ ⁇ -type element” in which elements including p-type and n-type semiconductors are connected in series. This is because in the ⁇ -type element, the heat absorption side and the heat dissipation side can be effectively arranged with respect to the heat source and the cooling source, respectively, and the power generation efficiency is easily improved.
  • at least one of the p-type and n-type semiconductors only needs to contain a semiconductor layer and a metal part having a void.
  • both the p-type and n-type semiconductors are made of semiconductor. It is more preferable that the metal part which has a layer and a space
  • a large-area element can be manufactured at low cost, it is also preferable to use it in combination with a device such as a solar cell that converts the remaining energy obtained by photoelectric conversion into heat.
  • the reaction solution was cooled to room temperature, filtered using a filter, and the silver nanowires separated by filtration were redispersed in ethanol. Filtration of silver nanowires with a filter and redispersion in ethanol were repeated five times, and finally an ethanol dispersion of silver nanowires was prepared to prepare wire-like silver nanowires 1.
  • a copper nanowire 1 having an average diameter of 100 nm, an average length of 10 ⁇ m, and an aspect ratio of 100 was prepared in the same manner as in the production of the silver nanowire 7 (Ag-7) except that copper sulfate was used instead of silver nitrate.
  • platinum nanowire 1 A platinum nanowire 1 having an average diameter of 100 nm, an average length of 10 ⁇ m, and an aspect ratio of 100 was prepared in the same manner as in the production of the silver nanowire 7 (Ag-7) except that platinum chloride was used instead of silver nitrate.
  • thermoelectric conversion element 1 Using the silver nanowire 1 (Ag-1) produced above, a thermoelectric conversion element 1 was produced according to the following method.
  • the silver nanowire 1 (Ag-1) produced above is added in an appropriate proportion to polyvinyl butyral resin (binder), dibutyl phthalate (plasticizer), ether type nonionic surfactant (Phosphonol manufactured by Toho Chemical Co., Ltd.) Then, ethanol and toluene were added as a solvent to form a slurry, which was coated on a polyethylene terephthalate (PET) film with a doctor blade and formed into a sheet. At this time, by appropriately adjusting the thickness of the coating film and the ratio of the metal fibers, metal fiber sheets (10 mm square) having various ratios of voids after firing were obtained.
  • PET polyethylene terephthalate
  • the metal fiber sheet and the PET film were placed on an alumina boat, degreased at 400 ° C., and then fired at 500 ° C. for 1 hour to obtain a current-carrying part having a porosity of about 60% by volume on the alumina boat.
  • the film thickness of the current-carrying part in the total film thickness between the electrodes (“A” shown in FIG. 1) was about 70 volume%.
  • the porosity was determined by observing the cross section using an electron microscope.
  • thermoelectric conversion semiconductor layer As shown in FIG. 2, a current-carrying portion 13 is laid on a 15 ⁇ m high-purity aluminum foil 11 and then separately cooled by a single-roll quenching method. A rapidly cooled thin piece of p-type Bi—Te semiconductor, n-type Bi— The Te semiconductor was temporarily pressed (200 ° C., 10 MPa) as the thermoelectric conversion semiconductor 14. The temporary press products were each 10 mm square and the film thickness was 10 ⁇ m. The gap between the elements was 1 mm.
  • thermoelectric conversion element After laying the current-carrying part 13 on the high-purity aluminum foil 12 of 15 ⁇ m, the temporary press product was stacked in the order of the thermoelectric conversion semiconductor 14, the current-carrying part, and the aluminum foil to form a three-layer structure. Under a pressure of 36 MPa in graphite, heating was performed up to 270 ° C. in a vacuum, and this pressing was performed to obtain a multilayer thermoelectric conversion element 1.
  • thermoelectric conversion elements 2 to 14 In the production of the thermoelectric conversion element 1, a thermoelectric conversion element was similarly obtained except that each metal fiber shown in Table 1 was used instead of the silver nanowire 1 (Ag-1) as the metal fiber constituting the energization part. 2 to 14 were produced.
  • thermoelectric conversion element 15 In the production of the thermoelectric conversion element 1, a thermoelectric conversion element 15 was produced in the same manner except that no metal fiber was used in the energization portion.
  • thermoelectric conversion element ⁇ Evaluation of thermoelectric conversion element >> [Evaluation of thermoelectric conversion efficiency]
  • Each of the produced thermoelectric conversion elements was placed on a flat plate hot plate at 120 ° C., and the other surface was cooled with a metal block through which water at 20 ° C. was passed. In this state, the electromotive force value A obtained from the lower electrode was measured, and a relative value was obtained with the electromotive force value A of the thermoelectric conversion element 7 being 100. The larger the relative power value obtained, the higher the thermoelectric conversion capability.
  • Table 1 shows the results obtained as described above.
  • thermoelectric conversion element including the metal fiber having a specific thickness and aspect ratio in the current-carrying part in the configuration defined in the present invention has excellent thermoelectric conversion efficiency, It turns out that it has high bending tolerance with respect to a comparative example.

Abstract

L’invention concerne un élément de conversion thermoélectrique hautement flexible qui permet de supprimer les défauts générés par les contraintes et qui possède des performances élevées de conversion thermoélectrique. L’élément de conversion thermoélectrique comprend un ensemble formé d’un semi-conducteur de conversion thermoélectrique et d’une fibre métallique ayant un rapport d’aspect au moins égal à 10 et une épaisseur au moins égale à 2 nm et ne dépassant pas 500 nm.
PCT/JP2009/061593 2008-07-22 2009-06-25 Elément de conversion thermoélectrique WO2010010783A1 (fr)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013510417A (ja) * 2009-11-03 2013-03-21 ビーエーエスエフ ソシエタス・ヨーロピア 熱電モジュールの接点接続としての多孔質金属材料の使用方法
WO2018163958A1 (fr) 2017-03-08 2018-09-13 三菱マテリアル株式会社 Module de conversion thermoélectrique et son procédé de fabrication
JP2018148085A (ja) * 2017-03-07 2018-09-20 三菱マテリアル株式会社 熱電変換モジュール
KR20190121832A (ko) 2017-03-08 2019-10-28 미쓰비시 마테리알 가부시키가이샤 열전 변환 모듈 및 그 제조 방법
JP2020511791A (ja) * 2017-03-09 2020-04-16 ラチース，リカルド 変換材料

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11330569A (ja) * 1998-05-13 1999-11-30 Sharp Corp 熱電変換素子およびその製造方法
JP2004193526A (ja) * 2002-12-13 2004-07-08 Canon Inc 熱電変換素子及びその製造方法
JP2005093454A (ja) * 2003-09-11 2005-04-07 Yamaha Corp 熱電材料及びその製造方法
JP2008523579A (ja) * 2004-10-29 2008-07-03 マサチューセッツ・インスティチュート・オブ・テクノロジー（エムアイティー） 高い熱電性能指数を備えたナノ複合材料

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003110156A (ja) * 2001-09-28 2003-04-11 Hitachi Powdered Metals Co Ltd 熱電変換モジュールおよびそれに用いる接着剤
JP2003338641A (ja) * 2002-05-22 2003-11-28 Toshiba Corp 熱電素子
JP2004228147A (ja) * 2003-01-20 2004-08-12 Toyota Motor Corp 熱電変換モジュール及びその製造方法
JP4446064B2 (ja) * 2004-07-07 2010-04-07 独立行政法人産業技術総合研究所 熱電変換素子及び熱電変換モジュール
JP4479628B2 (ja) * 2005-08-31 2010-06-09 ヤマハ株式会社 熱電材料及びその製造方法、並びに熱電モジュール
JP2007103580A (ja) * 2005-10-03 2007-04-19 Toyota Motor Corp 熱電変換素子及びその製造方法
JP2008010764A (ja) * 2006-06-30 2008-01-17 Chugoku Electric Power Co Inc:The 熱電変換装置
JP2008305987A (ja) * 2007-06-07 2008-12-18 Sumitomo Chemical Co Ltd 熱電変換モジュール

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11330569A (ja) * 1998-05-13 1999-11-30 Sharp Corp 熱電変換素子およびその製造方法
JP2004193526A (ja) * 2002-12-13 2004-07-08 Canon Inc 熱電変換素子及びその製造方法
JP2005093454A (ja) * 2003-09-11 2005-04-07 Yamaha Corp 熱電材料及びその製造方法
JP2008523579A (ja) * 2004-10-29 2008-07-03 マサチューセッツ・インスティチュート・オブ・テクノロジー（エムアイティー） 高い熱電性能指数を備えたナノ複合材料

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013510417A (ja) * 2009-11-03 2013-03-21 ビーエーエスエフ ソシエタス・ヨーロピア 熱電モジュールの接点接続としての多孔質金属材料の使用方法
JP2018148085A (ja) * 2017-03-07 2018-09-20 三菱マテリアル株式会社 熱電変換モジュール
WO2018163958A1 (fr) 2017-03-08 2018-09-13 三菱マテリアル株式会社 Module de conversion thermoélectrique et son procédé de fabrication
KR20190121832A (ko) 2017-03-08 2019-10-28 미쓰비시 마테리알 가부시키가이샤 열전 변환 모듈 및 그 제조 방법
JP2020511791A (ja) * 2017-03-09 2020-04-16 ラチース，リカルド 変換材料
US10950775B2 (en) 2017-03-09 2021-03-16 Gerold Kotman Conversion material

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