WO2018163958A1 - Module de conversion thermoélectrique et son procédé de fabrication - Google Patents

Module de conversion thermoélectrique et son procédé de fabrication Download PDF

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Publication number
WO2018163958A1
WO2018163958A1 PCT/JP2018/007801 JP2018007801W WO2018163958A1 WO 2018163958 A1 WO2018163958 A1 WO 2018163958A1 JP 2018007801 W JP2018007801 W JP 2018007801W WO 2018163958 A1 WO2018163958 A1 WO 2018163958A1
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WO
WIPO (PCT)
Prior art keywords
thermoelectric conversion
conversion element
type thermoelectric
wiring
layer
Prior art date
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PCT/JP2018/007801
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English (en)
Japanese (ja)
Inventor
皓也 新井
雅人 駒崎
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三菱マテリアル株式会社
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Priority claimed from JP2017163484A external-priority patent/JP6933055B2/ja
Application filed by 三菱マテリアル株式会社 filed Critical 三菱マテリアル株式会社
Priority to EP18763806.9A priority Critical patent/EP3595023A4/fr
Priority to CN201880011824.5A priority patent/CN110301051A/zh
Priority to US16/491,734 priority patent/US20200013941A1/en
Priority to KR1020197028503A priority patent/KR20190121832A/ko
Publication of WO2018163958A1 publication Critical patent/WO2018163958A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/13—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/81—Structural details of the junction
    • H10N10/817—Structural details of the junction the junction being non-separable, e.g. being cemented, sintered or soldered
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions

Definitions

  • the present invention relates to a thermoelectric conversion module in which a P-type thermoelectric conversion element and an N-type thermoelectric conversion element are arranged in series, and a manufacturing method thereof.
  • thermoelectric conversion module generally has a pair of P-type thermoelectric conversion elements and N-type thermoelectric conversion elements alternately arranged in the order of P-type, N-type, P-type, and N-type between a pair of wiring boards (insulating boards). It is set as the structure electrically connected in series so that it may be arrange
  • the thermoelectric conversion module connects both ends of the wiring to a DC power source and moves heat in each thermoelectric conversion element by the Peltier effect (P type moves in the same direction as the current, N type moves in the opposite direction of the current), Alternatively, a temperature difference is applied between the two wiring boards to generate an electromotive force in each thermoelectric conversion element by the Seebeck effect, which can be used for cooling, heating, or power generation.
  • thermoelectric conversion modules are more efficient as they operate at higher temperatures, so many high-temperature thermoelectric conversion modules have been developed.
  • a thermoelectric conversion module used at a medium high temperature (300 ° C.) or higher a resin cannot be used as a material for an insulating substrate, and therefore ceramics are generally used for the insulating substrate.
  • thermoelectric conversion elements there is a material having both insulating properties and thermal conductivity, such as aluminum nitride.
  • a material having both insulating properties and thermal conductivity such as aluminum nitride.
  • the linear expansion difference between thermoelectric conversion elements is changed to thermal stress as a rigid body. That is, when materials having different linear expansion coefficients are used as the thermoelectric conversion materials for both the P-type thermoelectric conversion element and the N-type thermoelectric conversion element, the thermoelectric conversion module is installed in the heat source. Cannot follow each shape change by being restrained by the ceramic substrate. For this reason, a compressive stress is generated in a thermoelectric conversion element having a large linear expansion coefficient, and a tensile stress is generated in a thermoelectric conversion element having a small linear expansion coefficient.
  • thermoelectric conversion element When a thermal stress is generated due to a thermal expansion / contraction difference, the thermoelectric conversion element may be peeled off from the wiring portion of the wiring board, or the thermoelectric conversion element may be cracked. In this case, electricity may not flow, the electrical conductivity may decrease, and the thermoelectric conversion module may become inoperable, or the amount of power generation may be significantly reduced even if the thermoelectric conversion module does not become inoperable.
  • foam metal porous metal material, porous metal member
  • metal fiber is connected to a wiring (electrode) connecting a plurality of thermoelectric conversion elements (thermoelectric semiconductor material, thermoelectric conversion semiconductor). Attempts have been made to relieve thermal stress due to thermal expansion and contraction by giving flexibility to the wiring by using the aggregate.
  • JP 2007-103580 A International Publication No. 2010/010883 Japanese Patent No. 5703871
  • Patent Documents 1 to 3 an assembly of foam metal or metal fiber is used for the wiring, and a current flows through these members themselves. For this reason, the internal resistance (thermal resistance and electrical resistance) of the wiring is significantly increased, and the output of the thermoelectric conversion module may be significantly decreased.
  • thermoelectric conversion module that can prevent the thermoelectric conversion element from being damaged due to a difference in thermal expansion and contraction, and has excellent bonding reliability, thermal conductivity, and conductivity, and a method for manufacturing the same.
  • the purpose is to provide.
  • the thermoelectric conversion module of the present invention includes a plurality of thermoelectric conversion elements composed of P-type thermoelectric conversion elements and N-type thermoelectric conversion elements having different linear expansion coefficients, and a first wiring disposed on one end side of the plurality of thermoelectric conversion elements.
  • thermoelectric conversion element and the N-type thermoelectric conversion element adjacent to the first wiring layer constituting the first wiring board are bonded.
  • the first thermoelectric conversion element and the N-type thermoelectric conversion element are electrically connected by the first wiring layer.
  • each of the first ceramic layers bonded to the first wiring layer is separated between any P-type thermoelectric conversion element and N-type thermoelectric conversion element among the plurality of thermoelectric conversion elements provided. ing.
  • the rigid first ceramic layer is divided between any of the P-type thermoelectric conversion elements and the N-type thermoelectric conversion elements, a plurality of the first ceramic layers are provided. Deformation due to thermal expansion and contraction is not constrained between the thermoelectric conversion elements by the mating first ceramic layers. For this reason, generation
  • the first wiring board is provided with a first ceramic layer. For this reason, when a thermoelectric conversion module is installed in a heat source etc., it can prevent that a heat source etc. and a 1st wiring layer contact with a 1st ceramic layer. Therefore, electrical connection (leakage) between the heat source and the first wiring layer can be reliably avoided, and the insulation state can be maintained satisfactorily. Since each thermoelectric conversion element has a low voltage, if the first ceramic layer as an insulating substrate is separated between the adjacent P-type thermoelectric conversion element and N-type thermoelectric conversion element, the first wiring layer Even if the first ceramic layers are not bonded to the entire surface, no electrical leakage will occur unless the first wiring layer is in physical contact with a heat source or the like.
  • the first wiring layer may be formed so as to straddle between the first ceramic layers.
  • thermoelectric conversion element the difference in thermal expansion between the adjacent P-type thermoelectric conversion element and N-type thermoelectric conversion element can be deformed by the connecting portion of the first wiring layer connecting the two thermoelectric conversion elements to absorb the dimensional change. Therefore, generation
  • the first ceramic layer may be formed independently for each thermoelectric conversion element.
  • the plurality of first ceramic layers constituting the first wiring board are formed independently for each thermoelectric conversion element provided, and each rigid first ceramic layer is interposed between the thermoelectric conversion elements. It is separated. For this reason, the deformation
  • the first wiring layer may be silver, aluminum, copper or nickel.
  • Silver, aluminum, copper, or nickel includes an alloy mainly composed of these.
  • the first wiring layer is made of aluminum having a purity of 99.99% by mass or more, or copper having a purity of 99.9% by mass or more.
  • High purity aluminum (Al) and copper (Cu) are easily elastically and plastically deformed.
  • Aluminum and copper are excellent in thermal conductivity and conductivity.
  • a soft material such as high purity pure aluminum or pure copper for the first wiring layer, it is possible to easily deform and follow the first wiring layer with the thermal expansion and contraction of each thermoelectric conversion element. Therefore, the thermal stress relaxation effect due to the thermal expansion / contraction difference of each thermoelectric conversion element can be further enhanced.
  • a thermoelectric conversion module can be manufactured at low cost.
  • the thermal conductivity and conductivity between both thermoelectric conversion elements connected by the first wiring layer can be favorably maintained.
  • the first wiring layer By forming the first wiring layer from silver (Ag), for example, when the first wiring substrate having the first wiring layer is disposed on the high temperature side of the thermoelectric conversion module, the heat resistance and oxidation resistance are improved. Or maintain good thermal conductivity and conductivity.
  • Nickel is inferior in oxidation resistance compared to aluminum and silver, but has relatively good heat resistance. Nickel is cheaper than silver and has relatively good element bonding. For this reason, the thermoelectric conversion module excellent in the balance of performance and price can be comprised by forming a 1st wiring layer with nickel.
  • the first wiring board is bonded to a surface opposite to a bonding surface of the plurality of first wiring layers and the first wiring layer of the first ceramic layer.
  • a first heat transfer metal layer, and the first heat transfer metal layer is formed between the two adjacent first wiring layers and between the two adjacent first ceramic layers. It is good to be formed straddling.
  • the first ceramic layers are connected by the first heat transfer metal layer, so that the first wiring layers can be handled integrally.
  • the handling property of one wiring board can be improved.
  • each 1st ceramic layer is only connected by either the 1st wiring layer or the 1st heat transfer metal layer, the 1st wiring layer and the 1st heat transfer metal layer are each thermoelectrical. It easily deforms and follows with the thermal expansion and contraction of the conversion element.
  • thermoelectric conversion element peels from a 1st wiring board (1st wiring layer), or each thermoelectric conversion element It is possible to prevent cracks from occurring.
  • thermoelectric conversion module when the thermoelectric conversion module is installed on a heat source or the like, the first heat transfer metal layer increases the adhesion between the heat source or the like and the thermoelectric conversion module. Can improve thermal conductivity. Therefore, the thermoelectric conversion performance (power generation efficiency) of the thermoelectric conversion module can be improved.
  • the first heat transfer metal layer is made of aluminum or copper, preferably aluminum having a purity of 99.99% by mass or more, or copper having a purity of 99.9% by mass or more. It is good to be taken.
  • the first heat transfer metal layer is made of a soft material such as pure aluminum having a high purity and pure copper, so that the first heat transfer metal layer can be easily moved along with the thermal expansion and contraction of each thermoelectric conversion element. Can be deformed and followed. Therefore, the thermal stress relaxation effect due to the thermal expansion / contraction difference of each thermoelectric conversion element can be further enhanced.
  • the first heat transfer metal layer from aluminum or copper, the thermal conductivity between the thermoelectric conversion module and the heat source can be maintained well, and the thermoelectric conversion performance can also be maintained well.
  • thermoelectric conversion module includes a second wiring board disposed on the other end side of the thermoelectric conversion element, and the first wiring board and the second wiring board that are arranged to face each other.
  • the P-type thermoelectric conversion element and the N-type thermoelectric conversion element may be electrically connected in series.
  • first ceramic layer constituting the first wiring substrate is separated between any P-type thermoelectric conversion element and N-type thermoelectric conversion element. Yes.
  • transformation accompanying a thermal expansion / contraction is not restrained by the 1st ceramic layer joined to the other party mutually.
  • the difference in thermal expansion and contraction between the P-type thermoelectric conversion element and the N-type thermoelectric conversion element is caused by deformation of the connection portion of the first wiring layer and the first heat transfer metal layer that connect the two thermoelectric conversion elements. Can absorb changes.
  • thermoelectric conversion module For this reason, generation
  • the second wiring board includes a second wiring layer in which the adjacent P-type thermoelectric conversion element and the N-type thermoelectric conversion element are joined, and the second wiring layer.
  • a second ceramic layer bonded to a surface opposite to a bonding surface between the P-type thermoelectric conversion element and the N-type thermoelectric conversion element, and each of the second ceramic layers is any of the second ceramic layers.
  • the P-type thermoelectric conversion element and the N-type thermoelectric conversion element may be separated from each other.
  • the second wiring layer may be formed so as to straddle between the second ceramic layers.
  • the second ceramic layer may be formed independently for each thermoelectric conversion element.
  • the second wiring layer may be silver, aluminum, copper or nickel.
  • the second wiring board includes a plurality of the second wiring layers and a second heat transfer metal layer bonded to a surface opposite to a bonding surface of the second ceramic layer to the second wiring layer.
  • the second heat transfer metal layer may be formed between both adjacent second wiring layers and between both adjacent second ceramic layers.
  • the second heat transfer metal layer may be aluminum or copper.
  • the second wiring layer in which the adjacent P-type thermoelectric conversion elements and N-type thermoelectric conversion elements are joined is divided into a plurality of separated second ceramic layers.
  • the P-type thermoelectric conversion element bonded to the second wiring layer and the N-type are formed by separating each second ceramic layer between the P-type thermoelectric conversion element and the N-type thermoelectric conversion element. Between the thermoelectric conversion elements, deformation due to thermal expansion and contraction is not constrained by the other second ceramic layer.
  • thermoelectric conversion element since the thermal expansion / contraction difference between the adjacent P-type thermoelectric conversion element and N-type thermoelectric conversion element can absorb the dimensional change due to the deformation of the connecting portion of the second wiring layer connecting the two thermoelectric conversion elements, Generation
  • thermoelectric conversion module As described above, the dimensional change caused by the thermal expansion / contraction difference can be absorbed in each thermoelectric conversion element in both the first wiring board and the second wiring board which are arranged to face each other, so that the first wiring layer and the second wiring layer are connected.
  • the electrical connection between the two thermoelectric conversion elements can be maintained well, and the joining reliability, thermal conductivity and conductivity of the thermoelectric conversion module can be maintained well.
  • the method for manufacturing a thermoelectric conversion module of the present invention includes a scribe line forming step for forming a scribe line for dividing a plurality of first ceramic layers from a ceramic base material on the ceramic base material, and after the scribe line forming step, A metal layer forming step of forming, on one surface of the ceramic base material, a first wiring layer straddling both adjacent first ceramic layer forming regions among the plurality of first ceramic layer forming regions partitioned by the scribe line; After the metal layer forming step, the ceramic base material on which the first wiring layer is formed is divided along the scribe line, and the first wiring layer and the first ceramic layer are joined together.
  • the dividing step of forming the substrate and the bonding surface of each of the first wiring layers to the first ceramic layers after the dividing step are opposite to each other Joining a P-type thermoelectric conversion element and an N-type thermoelectric conversion element having different linear expansion coefficients to each other, and manufacturing a thermoelectric conversion module in which the P-type thermoelectric conversion element and the N-type thermoelectric conversion element are connected in series And having.
  • thermoelectric conversion module in which a large number of thermoelectric conversion elements are joined (mounted), it is very difficult to align and join the first ceramic layers to the first wiring layer.
  • the ceramic base material is divided along the scribe lines, so that the first wiring easily arranged in a desired pattern
  • the 1st wiring board which has a layer and the separated 1st ceramic layer can be formed, and a thermoelectric conversion module can be manufactured smoothly.
  • the first wiring board can be handled integrally, and the handleability can be improved.
  • the joining step is performed between the first wiring layer of the first wiring board and the P-type thermoelectric conversion element between a pair of pressure plates arranged to face each other.
  • the N-type thermoelectric conversion element are disposed in advance, and the first wiring layer and the P-type thermoelectric conversion element are heated by heating the sandwiched body while being pressed in the stacking direction.
  • thermoelectric conversion element and in the bonding process, at least one of the P-type thermoelectric conversion element and the N-type thermoelectric conversion element has a small linear expansion coefficient
  • the A complementary member is disposed between the pressure plate and the first thermoelectric conversion element and the complementary member at the time of joining the first wiring board, the P-type thermoelectric conversion element, and the N-type thermoelectric conversion element.
  • the difference between the height of the other thermoelectric conversion element and the complementary member may want to be smaller than the difference between the height of the height and the other thermoelectric conversion element of the one thermoelectric conversion element.
  • the first wiring board has a plurality of separated first ceramic layers, when the sandwich body is heated in the joining step, the first ceramic layers do not restrain each other on the other side.
  • the thermal expansion of the P-type thermoelectric conversion element and the N-type thermoelectric conversion element stacked at each part can be followed. Therefore, in the joining process, a complementary member is disposed between one of the P-type thermoelectric conversion element and the N-type thermoelectric conversion element and at least one of the thermoelectric conversion elements having a small linear expansion coefficient and the pressure plate. In some cases, the height of the other thermoelectric conversion element having a large linear expansion coefficient can be made closer to the height of the one thermoelectric conversion element and the complementary member.
  • thermoelectric conversion element and the 1st wiring layer can be stuck, and it can press uniformly. Therefore, each thermoelectric conversion element and the first wiring board can be reliably bonded, and the bonding reliability of the thermoelectric conversion module can be improved.
  • the joining step is performed between the first wiring layer of the first wiring board and the P-type thermoelectric conversion element between a pair of pressure plates arranged to face each other.
  • the N-type thermoelectric conversion element are disposed in advance, and the first wiring layer and the P-type thermoelectric conversion element are heated by heating the sandwiched body while being pressed in the stacking direction.
  • the N-type thermoelectric conversion element, and in the bonding step an even number of the sandwiching bodies are arranged in the stacking direction, and the P-type thermoelectric conversion element and the N-type thermoelectric conversion element are arranged. And the same number in the stacking direction.
  • thermoelectric conversion elements and the N-type thermoelectric conversion elements can be arranged one by one (the same number) in the stacking direction.
  • one of the P-type thermoelectric conversion element and the N-type thermoelectric conversion element has a small linear expansion coefficient and a large linear expansion coefficient.
  • the same number of the other thermoelectric conversion elements can always be arranged.
  • thermoelectric conversion module can be manufactured in a single joining step by stacking a plurality of sandwiching bodies in this way.
  • a graphite sheet may be disposed between the sandwiching bodies in the joining step.
  • thermoelectric conversion module By interposing a graphite sheet having cushioning properties between the sandwiching bodies, the inclination of each thermoelectric conversion element in the surface direction of the first wiring board can be corrected, and each thermoelectric conversion element and the first wiring can be corrected.
  • the substrate can be pressed more uniformly. Therefore, each thermoelectric conversion element and the first wiring board can be reliably bonded, and the bonding reliability of the thermoelectric conversion module can be further increased.
  • the metal layer forming step includes forming the plurality of first wiring layers on the one surface of the ceramic base material and the other of the ceramic base materials. Forming a first heat transfer metal layer on the surface of the first heat transfer metal layer, and forming the first heat transfer metal layer straddling between both adjacent first wiring layers in the metal layer forming step; It is formed straddling between the matching first ceramic layer forming regions.
  • the first wiring layers are connected by the first heat transfer metal layer. For this reason, each 1st wiring layer can be handled integrally, and the handleability of a 1st wiring board can be improved.
  • the ceramic base material is divided along the scribe line so that the first wiring layer can be easily arranged in a desired pattern. And the 1st wiring board which has the separated 1st ceramic layer can be formed, and a thermoelectric conversion module can be manufactured smoothly.
  • thermoelectric conversion module can be manufactured stably.
  • the scribe line is a non-joined portion excluding a planned joining region of the first wiring layer on one surface of the ceramic base material. It is good to form.
  • the scribe line may be formed in a non-joining portion excluding a planned joining region of the first heat transfer metal layer on the other surface of the ceramic base material.
  • a plurality of scribe lines are formed on both surfaces of the ceramic base material by forming the scribe lines on the non-bonded portion of the first wiring layer, the non-bonded portion of the first heat transfer metal layer, or both of these non-bonded portions.
  • the first ceramic layer forming region can be partitioned by the scribe line thus formed.
  • the ceramic base material can be easily divided along the scribe line by forming the scribe line on the surface (opposite surface) opposite to the bonding surface of the first wiring layer or the first heat transfer metal layer. Accordingly, the first wiring board having the first wiring layers arranged in a desired pattern and the separated first ceramic layers can be formed easily, and the thermoelectric conversion module can be manufactured smoothly.
  • the scribe line is formed not only at the non-joint portion of the first wiring layer and the non-joint portion of the first heat transfer metal layer, but also at the joint portion of the first wiring layer and the joint portion of the first heat transfer metal layer. It is good to keep. By forming scribe lines at the junction of the first wiring layer and the junction of the first heat transfer metal layer, the ceramic base material can be further easily divided.
  • the scribe line in the scribe line forming step, may be formed by a straight line penetrating opposite sides of the ceramic base material.
  • the ceramic base material can be smoothly divided along the scribe line. Therefore, the manufacturing process can be simplified.
  • thermoelectric conversion element can be prevented from being damaged due to the difference in thermal expansion and contraction, and a thermoelectric conversion module having excellent bonding reliability, thermal conductivity, and conductivity can be provided.
  • thermoelectric conversion module of 1st Embodiment It is a longitudinal cross-sectional view which shows the thermoelectric conversion module of 1st Embodiment. It is a flowchart of the manufacturing method of the thermoelectric conversion module of 1st Embodiment. It is a longitudinal cross-sectional view explaining the scribe line formation process of the manufacturing method of the thermoelectric conversion module of 1st Embodiment. It is a longitudinal cross-sectional view explaining the metal layer formation process of the manufacturing method of the thermoelectric conversion module of 1st Embodiment, and shows the first half part of a process. It is a longitudinal cross-sectional view explaining the metal layer formation process of the manufacturing method of the thermoelectric conversion module of 1st Embodiment, and shows the second half part of a process.
  • thermoelectric conversion module of 1st Embodiment It is a longitudinal cross-sectional view explaining the division
  • thermoelectric conversion module of 1st Embodiment It is a longitudinal cross-sectional view explaining the division
  • FIG. 10 is a cross-sectional plan view taken along the line AA in FIG. 9.
  • FIG. 10 is a cross-sectional plan view taken along the line BB in FIG. FIG.
  • FIG. 10 is a cross-sectional plan view taken along the line CC of FIG.
  • FIG. 10 is a cross-sectional plan view in the direction of the arrows along the line DD in FIG. 9. It is the top view which orient
  • FIG. 16B is a plan view in which the other surface of the first wiring board shown in FIG. 16A faces the front side. It is the top view which orient
  • FIG. 17B is a plan view in which the other surface of the first wiring board shown in FIG. 17A faces the front side.
  • FIG. 19B is a plan view in which the other surface of the first wiring board shown in FIG. 19A faces the front side.
  • FIG. 1 shows a thermoelectric conversion module 101 according to the first embodiment.
  • the thermoelectric conversion module 101 is a combination of a plurality of thermoelectric conversion elements 3 and 4, and the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 of the thermoelectric conversion elements 3 and 4 are on one end side (FIG. 1).
  • the first wiring board 2A disposed on the lower side is electrically connected in series.
  • the P-type thermoelectric conversion element 3 is expressed as “P”
  • the N-type thermoelectric conversion element 4 is expressed as “N”.
  • the thermoelectric conversion module 101 has a configuration in which the external wiring 91 is directly drawn out from the other end of each thermoelectric conversion element 3, 4.
  • the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 are composed of, for example, a sintered body such as a tellurium compound, skutterudite, filled skutterudite, Heusler, half-Heusler, clastrate, silicide, oxide, or silicon germanium. Is done. There are compounds that can take both P-type and N-type depending on the dopant, and compounds that have either P-type or N-type properties.
  • Bi 2 Te 3 , Sb 2 Te 3 , PbTe, TAGS Ag—Sb—Ge—Te
  • Zn 4 Sb 3 , CoSb 3 , CeFe 4 Sb 12 , Yb 14 MnSb 11, feVAl, MnSi 1.73, FeSi 2, such as Na x CoO 2, Ca 3 Co 4 O 7, Bi 2 Sr 2 Co 2 O 7, SiGe is used.
  • N-type thermoelectric conversion element 4 Bi 2 Te 3, PbTe , La 3 Te 4, CoSb 3, FeVAl, ZrNiSn, Ba 8 Al 16 Si 30, Mg 2 Si, FeSi 2, SrTiO 3, CaMnO 3, ZnO SiGe or the like is used.
  • thermoelectric conversion material of the intermediate temperature type about 300 ° C. to 500 ° C.
  • manganese silicide MnSi 1.73
  • magnesium silicide Mg 2 Si
  • the linear expansion coefficient of manganese silicide used in the P-type thermoelectric conversion element 3 is about 10.8 ⁇ 10 ⁇ 6 / K
  • the linear expansion coefficient of magnesium silicide used in the N-type thermoelectric conversion element 4 is 17.0 ⁇ 10. It is about -6 / K.
  • the linear expansion coefficient of the P-type thermoelectric conversion element 3 is larger than the linear expansion coefficient of the N-type thermoelectric conversion element 4. Get smaller.
  • thermoelectric conversion elements 3 and 4 are formed in, for example, a prismatic shape having a square cross section (for example, 1 mm to 8 mm on one side) or a circular column having a circular cross section (for example, a diameter of 1 mm to 8 mm).
  • the length (the length along the vertical direction in FIG. 1) is 1 mm to 10 mm.
  • the length of the P-type thermoelectric conversion element 3 and the length of the N-type thermoelectric conversion element 4 are set to be equal (substantially the same length) at room temperature (25 ° C.).
  • a metallized layer 41 made of nickel, silver, gold or the like is formed on both end faces of each thermoelectric conversion element 3, 4.
  • the thickness of the metallized layer 41 is 1 ⁇ m or more and 100 ⁇ m or less.
  • the first wiring board 2 ⁇ / b> A includes a first wiring layer 11 ⁇ / b> A to which the thermoelectric conversion elements 3 and 4 are bonded and a bonding surface of the first wiring layer 11 ⁇ / b> A to the thermoelectric conversion elements 3 and 4.
  • the first ceramic layer 21A is bonded to the opposite surface, and the first heat transfer metal layer 32A is bonded to the opposite surface of the first ceramic layer 21A to the wiring layer 11A.
  • the heat transfer metal layer 32A is not an essential component.
  • the first ceramic layer 21A is formed of a general ceramic material such as alumina (Al 2 O 3 ), aluminum nitride (AlN), silicon nitride (Si 3 N 4 ), or the like having a high thermal conductivity and an insulating property. Is done.
  • the first ceramic layer 21 ⁇ / b> A is divided into a plurality (two in FIG. 1) and is formed independently for each of the thermoelectric conversion elements 3 and 4.
  • the first ceramic layer 21A is formed, for example, in a square shape in plan view. Further, the thickness of the first ceramic layer 21A is set to 0.1 mm or more and 2 mm or less.
  • the first wiring board 2A is provided with one first wiring layer 11A having a rectangular shape in plan view and two first heat transfer metal layers 32A having a square shape in plan view.
  • the first wiring layer 11A is formed by connecting the adjacent P-type thermoelectric conversion elements 3 and N-type thermoelectric conversion elements 4, and straddles between the two first ceramic layers 21A and 21A. Is formed.
  • the first heat transfer metal layer 32A is formed independently for each first ceramic layer 21A.
  • the first wiring layer 11A is made of a material mainly composed of silver, aluminum, copper, or nickel, and is formed in a planar shape.
  • As the material of the first wiring layer 11A aluminum having a purity of 99.99% by mass or more (so-called 4N aluminum) or copper having a purity of 99.9% by mass or more is preferable.
  • the thickness of the first wiring layer 11A that connects the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 is preferably 0.1 mm or more and 2 mm or less.
  • the first wiring layer 11A is made of a soft material such as high purity pure aluminum or pure copper, and is formed with a relatively thin thickness so that the two adjacent thermoelectric conversion elements 3 and 4 are connected.
  • the planar first wiring layer 11 ⁇ / b> A provided can be easily deformed and followed by the thermal expansion and contraction of both thermoelectric conversion elements 3 and 4, and can be easily bent between these thermoelectric conversion elements 3 and 4. Since aluminum and copper are cheaper than silver, the thermoelectric conversion module 101 can be manufactured at low cost by forming the first wiring layer 11A with aluminum or copper. Further, by forming the first wiring layer 11A from aluminum or copper, the thermal conductivity and conductivity between the thermoelectric conversion elements 3 and 4 connected by the first wiring layer 11A can be favorably maintained.
  • the thermoelectric conductivity and the electrical conductivity can be maintained well, and the electric resistance can be lowered even when the thickness is relatively thin.
  • the first wiring board 2A including the first wiring layer 11A is disposed on the high temperature side of the thermoelectric conversion module 101, heat resistance and oxidation resistance can be improved.
  • the thickness of the first wiring layer 11A is preferably 10 ⁇ m or more and 200 ⁇ m or less.
  • the thermoelectric conversion module 101 having an excellent balance between performance and price can be configured.
  • the first wiring board 2A including the first wiring layer 11A is disposed on the high temperature side of the thermoelectric conversion module 101, heat resistance and oxidation resistance can be improved.
  • the thickness of the first wiring layer 11A is preferably 0.1 mm or more and 1 mm or less.
  • the first heat transfer metal layer 32A is made of a material mainly composed of aluminum or copper (aluminum, aluminum alloy, copper or copper alloy), and is formed in a planar shape.
  • a material for the first heat transfer metal layer 32A aluminum having a purity of 99.99% by mass or more (so-called 4N aluminum) or copper having a purity of 99.9% by mass or more is preferable.
  • 4N aluminum aluminum having a purity of 99.9% by mass or more
  • the followability is improved when the first heat transfer metal layer 32A contacts the heat source or the cooling source. And heat transferability is improved. Therefore, the thermoelectric exchange performance of the thermoelectric conversion module 101 is not deteriorated.
  • the size (planar size) of the first wiring layer 11A and the first heat transfer metal layer 32A depends on the size of the thermoelectric conversion elements 3 and 4 connected to the first wiring layer 11A. , 4 is set equal to or slightly larger than the area of the end face. Further, the first ceramic layer 21A has a space of 0.1 mm or more in width around the first wiring layer 11A, the first heat transfer metal layers 32A, 32A, and between the first heat transfer metal layers 32A, 32A. It is formed in a planar shape that can be secured.
  • thermoelectric conversion module 101 configured as described above.
  • the method for manufacturing the thermoelectric conversion module of the present embodiment includes a plurality of steps S11 to S14.
  • 3A to 3D and 4A to 4D show an example of each process of the method for manufacturing the thermoelectric conversion module of the present embodiment.
  • scribe line forming process First, as shown in FIGS. 3A and 4A, a scribe line (dividing groove) for dividing the plurality of first ceramic layers 21A, 21A into a large ceramic base material 201 constituting the first ceramic layers 21A, 21A. 202 is formed (scribe line forming step S11). Then, a plurality of (two) first ceramic layer forming regions 203 and 203 are defined in the ceramic base material 201 by forming the scribe line 202.
  • the scribe line 202 can be formed by laser processing, for example, as shown in FIG. 3A.
  • the scribe line 202 can be processed by irradiating a laser beam L such as a CO 2 laser, a YAG laser, a YVO 4 laser, and a YLF laser to one surface of the ceramic base material 201.
  • a laser beam L such as a CO 2 laser, a YAG laser, a YVO 4 laser, and a YLF laser.
  • the scribe line 202 is formed on at least one surface of the ceramic base material 201 as shown in FIG. 4A. Specifically, the scribe line 202 is formed not on the bonding surface of the first wiring layer 11A formed across the two first ceramic layers 21A and 21A but on the opposite surface (opposite surface). That is, when the first wiring layer 11A is bonded to one surface of the ceramic base material 201 as shown in FIG. 4C, the scribe line 202 is connected to the other side of the ceramic base material 201 as shown in FIG. 4A. It forms in the non-joining part except the joining plan area
  • the scribe line 202 is formed not only at the non-joining portion of the first wiring layer 11A and the non-joining portion of the first heat transfer metal layer 32A, but also at the joining portion of the first wiring layer 11A. It can also be formed on both sides of the base material 201.
  • the scribe line 202 is formed by a straight line penetrating opposite sides of the ceramic base material 201 as shown in FIG. 4A.
  • one scribe line 202 penetrating the long sides is formed in the ceramic base material 201, and the ceramic base material 201 is divided into two by this one scribe line 202, and the first ceramic layer 21A, Two first ceramic layer forming regions 203, 203 partitioned into the size of the outer shape of 21A are formed in alignment.
  • the ceramic base material 201 on which the scribe line 202 is formed is cleaned by immersing it in an etching solution.
  • the scribe line forming step S11 is not limited to laser processing, and can be performed by other processing methods such as a diamond scriber.
  • the first wiring layer 11A is formed on one surface of the ceramic base material 201, and the first heat transfer metal layer 32A is formed on the other surface (metal layer forming step S12).
  • a metal plate 301 to be the first wiring layer 11 ⁇ / b> A is bonded to one surface of the ceramic base material 201, that is, the surface where the scribe line 202 is not formed, and the scribe line 202 is used.
  • the metal plate 302 to be the first heat transfer metal layer 32A is joined to the other surface on which the is formed.
  • the metal plate 301 and the ceramic base material 201 and the ceramic base material 201 and the metal plate 302 are joined using a brazing material or the like.
  • the metal plates 301 and 302 are formed of a metal material mainly composed of aluminum
  • a metal plate is used by using a bonding material such as Al-Si, Al-Ge, Al-Cu, Al-Mg, or Al-Mn.
  • 301 and 302 and the ceramic base material 201 are joined.
  • the metal plates 301 and 302 are formed of a metal material mainly composed of copper
  • the metal plates 301 and 302 and the ceramic base material 201 are used by using a bonding material such as Ag-Cu-Ti or Ag-Ti.
  • the metal plates 301 and 302 and the ceramic base material 201 may be joined by a transient liquid phase joining method called TLP joining method (Transient Liquid Phase Bonding) in addition to brazing.
  • TLP joining method Transient Liquid Phase Bonding
  • the ceramic base material 201 to which the metal plates 301 and 302 are bonded is subjected to an etching process.
  • the first ceramic layer forming regions 203, The first wiring layer 11 ⁇ / b> A disposed across the 203 is patterned, and the first heat transfer metal layers 32 ⁇ / b> A and 32 ⁇ / b> A independent of the first ceramic layer formation regions 203 and 203 are formed on the other surface of the ceramic base material 201. Is patterned.
  • the scribe line 202 is formed in a non-joined portion excluding the planned joining region of the first heat transfer metal layers 32A and 32A.
  • the entire scribe line 202 can be exposed by removing the metal layer portion (metal plate) formed over the scribe line 202. Thereby, the laminated body 204 including the patterned first wiring layer 11A and the first heat transfer metal layers 32A and 32A and the ceramic base material 201 is formed.
  • the first wiring layer 11A can also be formed without performing an etching process by bonding a previously patterned metal plate to one surface of the ceramic base material 201.
  • the first heat transfer metal layers 32 ⁇ / b> A and 32 ⁇ / b> A can be formed without performing an etching process by joining a piece of metal plate patterned in advance to the other surface of the ceramic base material 201.
  • the first wiring layer 11A can be composed of a sintered body of silver (Ag).
  • a silver paste containing glass and silver containing glass is applied to one surface of the ceramic base material 201 and subjected to heat treatment, whereby a silver paste is obtained. Can be formed by firing. Therefore, the patterned first wiring layer 11A can be formed without performing an etching process.
  • the surface of the ceramic base material 201 that contacts at least the interface with the silver paste is composed of alumina (Al 2 O 3 ).
  • the entire ceramic base material 201 may be made of alumina, or a ceramic substrate in which aluminum nitride is oxidized and the surface is made of alumina may be used.
  • the ceramic base material 201 of the laminated body 204 is divided along the scribe line 202 by bending the ceramic base material 201 so as to protrude toward the surface on which the scribe line 202 is formed. 1 Ceramic layers 21A and 21A are separated. Then, as shown in FIGS. 3D and 4D, a first wiring board 2A is formed in which the first wiring layer 11A, the first ceramic layers 21A and 21A, and the first heat transfer metal layers 32A and 32A are joined. (Division process S13).
  • the ceramic base material 201 can be easily divided along the scribe line 202.
  • the scribe line 202 is formed by a simple straight line that penetrates the opposing sides of the ceramic base material 201, the ceramic base material 201 can be smoothly divided along the scribe line 202.
  • thermoelectric conversion element 3 and one end face of the N-type thermoelectric conversion element 4 are joined to the first wiring layer 11A of the first wiring board 2A (joining step S14).
  • first wiring layer 11A is bonded to the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 by bonding using a paste or brazing material, solid phase diffusion bonding by applying a load, or the like. .
  • each of the pressure plates 401A and 401B is composed of a carbon plate.
  • thermoelectric conversion element 3 At the time of joining the first wiring layer 11A to the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4, at least one of the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 has a small linear expansion coefficient.
  • a complementary member 411 is disposed between the thermoelectric conversion element and the pressure plates 401 ⁇ / b> A and 401 ⁇ / b> B to complement the thermal expansion / contraction difference caused by the linear expansion difference between the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4.
  • thermoelectric conversion element 3 of manganese silicide (linear expansion coefficient of about 10.8 ⁇ 10 ⁇ 6 / K) and an N-type of magnesium silicide (linear expansion coefficient of about 17.0 ⁇ 10 ⁇ 6 / K).
  • the linear expansion coefficient of the P-type thermoelectric conversion element 3 is smaller than the linear expansion coefficient of the N-type thermoelectric conversion element 4.
  • the complementary member 411 is arrange
  • the complementary member 411 is easily handled by being fixed to the pressure plates 401A and 401B in advance and integrated.
  • a graphite sheet is disposed between the complementary member 411 and the metallized layer 41 of the P-type thermoelectric conversion element 3 and the first heat transfer metal layer 32A to prevent bonding.
  • the complementary member 411 when the complementary member 411 is disposed only on the P-type thermoelectric conversion element 3 side, the complementary member 411 needs to use a material having a higher linear expansion coefficient than the N-type thermoelectric conversion element 4.
  • a material having a higher linear expansion coefficient than the N-type thermoelectric conversion element 4. For example, aluminum (23 ⁇ 10 ⁇ 6 / K) is a material whose linear expansion coefficient is higher than that of the N-type thermoelectric conversion element 4 (about 17.0 ⁇ 10 ⁇ 6 / K). This material is used for the complementary member 411.
  • thermoelectric conversion elements 3 and 4 and the first wiring layer 11A can be brought into close contact with each other between the pair of pressurizing plates 401A and 401B, and can be uniformly pressed.
  • the complementary member 411 is disposed between the lower pressure plate 401 ⁇ / b> A and the sandwiching body 405, and the complementary member 411 is disposed between the upper pressure plate 401 ⁇ / b> B and the sandwiching body 405.
  • the complementary members 412 and 413 can also be arrange
  • a complementary member 412 made of a material having a large linear expansion coefficient is disposed on the P-type thermoelectric conversion element 3 side having a small linear expansion coefficient, and the N-type thermoelectric conversion element 4 side having a large linear expansion coefficient is lined more than the complementary member 412.
  • a complementary member 413 made of a material having a small expansion coefficient is arranged.
  • a graphite sheet is arrange
  • aluminum (23 ⁇ 10 ⁇ 6 / K) or copper (17 ⁇ 10 ⁇ 6 / K) can be used as the material of the complementary member 412 disposed on the P-type thermoelectric conversion element 3 side.
  • iron (12 ⁇ 10 ⁇ 6 / K) or nickel (13 ⁇ 10 ⁇ 6 / K) can be used as the material of the complementary member 413 disposed on the N-type thermoelectric conversion element 4 side.
  • the difference between the height of 413 can be made smaller than the difference between the height of the P-type thermoelectric conversion element 3 and the height of the N-type thermoelectric conversion element 4, and the height of the P-type thermoelectric conversion element 3 and the complementary member 412 and the N-type thermoelectric conversion can be reduced.
  • the height of the element 4 and the complementary member 413 can be made uniform. Therefore, the thermoelectric conversion elements 3 and 4 and the first wiring layer 11A can be brought into close contact with each other between the pair of pressurizing plates 401A and 401B, and can be uniformly pressed.
  • the complementary member 412 made of a material having a large linear expansion coefficient is disposed on the P-type thermoelectric conversion element 3 side having a small linear expansion coefficient, and the complementary member 412 is disposed on the N-type thermoelectric conversion element 4 side having a large linear expansion coefficient.
  • the complementary member 413 made of a material having a smaller linear expansion coefficient is arranged, the complementary member made of a material having a smaller linear expansion coefficient is arranged on the P-type thermoelectric conversion element 3 side, and the wire is arranged on the N-type thermoelectric conversion element 4 side.
  • a complementary member made of a material having a large expansion coefficient may be arranged.
  • the thickness of each complementary member may be adjusted.
  • the first wiring board 2A has a plurality of individual first ceramic layers 21A, 21A, when the sandwiching body 405 is heated in the joining step S14, each first ceramic layer 21A , 21A do not restrain each other. For this reason, it can move following the thermal expansion of the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 stacked in each part of the first wiring board 2A. Thereby, the thermoelectric conversion module 101 by which the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 were connected in series via the 1st wiring board 2A can be manufactured.
  • thermoelectric conversion module 101 manufactured in this way has an external heat source (not shown), a cooling channel (not shown), and the like, for example, on the lower side of FIG. Thereby, an electromotive force corresponding to the upper and lower temperature difference is generated in each thermoelectric conversion element 3, 4, and the potential difference of the sum of the electromotive force generated in each thermoelectric conversion element 3, 4 is between the wires 91, 91 at both ends of the array. Can be obtained.
  • thermoelectric conversion module 101 Under such a use environment, a difference occurs in the thermal expansion between both thermoelectric conversion elements 3 and 4 of the thermoelectric conversion module 101.
  • the first ceramic layers 21A and 21A constituting the first wiring board 2A are separated between the adjacent P-type thermoelectric conversion element 3 and N-type thermoelectric conversion element 4, and the thermoelectric conversion element 3 and 4 are formed independently, and the connection between the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 in the rigid first ceramic layers 21A and 21A is divided. For this reason, the thermoelectric conversion elements 3 and 4 are not restrained from being deformed by the thermal expansion and contraction by the first ceramic layers 21A and 21A.
  • thermoelectric conversion elements 3 and 4 are peeled off from the first wiring board 2A (first wiring layer 11A) or cracks are generated in the thermoelectric conversion elements 3 and 4 due to the difference in thermal expansion and contraction between the thermoelectric conversion elements 3 and 4. Can be prevented. Therefore, the electrical connection between the thermoelectric conversion elements 3 and 4 connected by the first wiring layer 11A can be maintained satisfactorily, and the junction reliability, thermal conductivity, and conductivity of the thermoelectric conversion module 101 can be maintained satisfactorily.
  • the first wiring board 2A is provided with first ceramic layers 21A and 21A which are insulating boards. For this reason, when the thermoelectric conversion module 101 is installed in a heat source or the like, the first ceramic layers 21A and 21A can prevent the heat source and the first wiring layer 11A from contacting each other. Therefore, electrical leakage between the heat source and the first wiring layer 11A can be reliably avoided, and the insulation state can be maintained well.
  • thermoelectric conversion elements 3 and 4 themselves have a low voltage, if the first ceramic layers 21A and 21A, which are insulating substrates, are formed independently for each thermoelectric conversion element 3 and 4, the first wiring layer Even if the first ceramic layers 21A and 21A are not bonded to the entire surface of 11A, as long as the first wiring layer 11A is not in physical contact with a heat source or the like, electrical leakage does not occur.
  • thermoelectric conversion module 101 when the thermoelectric conversion module 101 is installed in a heat source or the like, the first heat transfer metal layers 32A and 32A are used as the heat source. Etc. and the thermoelectric conversion module 101 can be improved in adhesion, and heat transfer can be improved. Therefore, the thermoelectric exchange performance (power generation efficiency) of the thermoelectric conversion module 101 can be improved.
  • thermoelectric conversion element P-type thermoelectric conversion element 3 having a small linear expansion coefficient
  • the pressure plates 401A and 401B, complementary members 411 to 413 are arranged to compensate for the thermal expansion / contraction difference caused by the linear expansion difference between the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4.
  • the thermoelectric conversion elements 3 and 4 and the first wiring layer 11A are brought into close contact with each other between the pair of pressure plates 401A and 401B, and the pressure is uniformly applied.
  • the bonding process is limited to this. It is not a thing.
  • thermoelectric conversion elements 3 and 4 and the first wiring layer 11A are brought into close contact with each other when the first wiring layer 11A is bonded to the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4.
  • Each can be uniformly pressurized.
  • thermoelectric conversion elements 3 and 4 in the surface direction of the first wiring board 2 ⁇ / b> A can be arranged at each location.
  • the inclination can be corrected, and the thermoelectric conversion elements 3 and 4 and the first wiring board 2A can be more uniformly pressurized.
  • the first wiring boards 2A and 2A of the two sandwiching bodies 405 and 405 adjacent to each other in the stacking direction are arranged to face each other, so that the thermoelectric conversion elements 3 in the surface direction of the first wiring board 2A are arranged.
  • the P-type thermoelectric conversion elements 3 and the N-type thermoelectric conversion elements 4 can be arranged one by one (the same number) in the stacking direction.
  • thermoelectric conversion elements 3 and 4 and the first wiring board 2A can be corrected. Can be more uniformly pressurized.
  • thermoelectric conversion elements 3 and 4 and the first wiring layer 11A can be brought into close contact with each other between the pair of pressure plates 401A and 401B, and the thermoelectric conversion elements 3 and 4 and the first wiring board can be pressed uniformly. 2A can be reliably joined. Moreover, a plurality of thermoelectric conversion modules 101 can be manufactured in a single joining step S14 by stacking a plurality of sandwiching bodies 405 in this way.
  • the first wiring board 2 ⁇ / b> A is provided on one end side of the thermoelectric conversion elements 3, 4, but the thermoelectric conversion module of the second embodiment shown in FIG. 8.
  • the 1st wiring board 2A is arrange
  • the 2nd wiring board 2B is arrange
  • the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 can be electrically connected in series via the first wiring board 2A and the second wiring board 2B that are arranged to face each other.
  • thermoelectric conversion module 102 of the second embodiment elements common to the thermoelectric conversion module 101 of the first embodiment are denoted by the same reference numerals and description thereof is omitted.
  • the first wiring board 2A disposed on one end side (the lower side in FIG. 8) of the thermoelectric conversion elements 3 and 4 is the same as that in the first embodiment, and a description thereof will be omitted.
  • the second wiring board 2B disposed on the other end side (upper side in FIG. 8) of the thermoelectric conversion elements 3 and 4 includes the second wiring layers 12B and 12B and the thermoelectric conversion elements 3 and 2 of the second wiring layers 12B and 12B.
  • the second ceramic layers 21B, 21B constituting the second wiring board 2B are separated into a plurality (two in FIG. 8), and are formed independently for each thermoelectric conversion element 3, 4 as in the first embodiment. ing.
  • Each of the second ceramic layers 21B and 21B is formed in a square shape in plan view.
  • the second wiring board 2B is provided with two second wiring layers 12B, 12B having a square shape in plan view, and one second heat transfer metal layer 31B having a rectangular shape in plan view.
  • the second wiring layers 12B, 12B are formed independently for each of the second ceramic layers 21B, 21B, and are individually connected to the thermoelectric conversion elements 3, 4.
  • the second heat transfer metal layer 31B is formed between both adjacent second wiring layers 12B and 12B, and is formed between both adjacent second ceramic layers 21B and 21B. .
  • the first wiring layer 11A of the first wiring board 2A and the second heat transfer metal layer 31B of the second wiring board 2B are made of the same metal material (the same thickness and the same thickness).
  • the first heat transfer metal layers 32A, 32A of the first wiring board 2A and the second wiring layers 12B, 12B of the second wiring board 2B are formed in the same shape with the same metal material. Yes.
  • the first wiring board 2A and the second wiring board 2B are bonded to two ceramic layers (the first ceramic layers 21A and 21A or the second ceramic layers 21B and 21B) and one surface of both ceramic layers.
  • first wiring layer 11A or second heat transfer metal layer 31B in plan view and the square shape in plan view formed independently of each ceramic layer bonded to the other surface of both ceramic layers.
  • Metal layers first heat transfer metal layers 32A and 32A or second wiring layers 12B and 12B). That is, both the wiring boards 2A and 2B are configured by one type of wiring board having the same configuration.
  • thermoelectric conversion elements 3 and the N-type thermoelectric conversion elements 4 are alternately connected in series between the pair of wiring boards 2A and 2B configured as described above, so that the thermoelectric conversion module 102 is It is configured. Therefore, the description of the manufacturing method of the thermoelectric conversion module 102 is omitted.
  • thermoelectric conversion module 102 of the second embodiment manufactured in this way the ceramic layers 21A and 21B constituting the wiring boards 2A and 2B are formed independently for each thermoelectric conversion element 3 and 4.
  • the connection between the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 in the rigid ceramic layers 21A and 21B is cut off. For this reason, the thermoelectric conversion elements 3 and 4 are not restrained from being deformed by the thermal expansion and contraction by the ceramic layers 21A and 21B.
  • the first ceramic layers 21A and 21A of the first wiring board 2A are connected by the first wiring layer 11A, and the second ceramic layers 21B and 21B of the second wiring board 2B are connected by the second heat transfer metal. They are only connected by the layer 31B.
  • the thermal expansion / contraction difference between the adjacent P-type thermoelectric conversion element 3 and N-type thermoelectric conversion element 4 is the first wiring layer 11A or the second heat transfer metal layer 31B connecting the two thermoelectric conversion elements 3 and 4. Therefore, the connecting portion can be deformed to absorb the dimensional change. For this reason, generation
  • thermoelectric conversion elements 3 and 4 are peeled off from both the wiring boards 2A and 2B (the first wiring layer 11A or the second wiring layers 12B and 12B) due to the difference in thermal expansion and contraction between the thermoelectric conversion elements 3 and 4. It is possible to prevent cracks from occurring in the third and fourth. Therefore, the electrical connection between the thermoelectric conversion elements 3 and 4 connected by the first wiring layer 11A and the second wiring layers 12B and 12B can be satisfactorily maintained, and the joining reliability and thermal conductivity of the thermoelectric conversion module 102 can be maintained. In addition, the conductivity can be maintained well.
  • the ceramic layers 21A and 21B which are insulating substrates, are provided on the wiring boards 2A and 2B, respectively, when the thermoelectric conversion module 102 is installed on a heat source or the like, the ceramic layers 21A and 21B It is possible to prevent the first wiring layer 11A or the second wiring layers 12B and 12B from contacting each other. Therefore, electrical leakage between the heat source and the first wiring layer 11A or the second wiring layers 12B and 12B can be reliably avoided, and the insulation state can be maintained satisfactorily.
  • the wiring board 2A, 2B is provided with the first heat transfer metal layer 32A or the second heat transfer metal layer 31B.
  • thermoelectric conversion element 3 and 4 in one set of wiring boards 2A and 2B.
  • it is not limited to this. Only at least one wiring board has a ceramic layer formed independently for each thermoelectric conversion element 3, 4, so that the dimensional change due to the difference in thermal expansion and contraction between both thermoelectric conversion elements 3, 4 can be reduced. Further, it is possible to prevent the occurrence of cracks in the thermoelectric conversion elements 3 and 4 due to the thermal expansion / contraction difference, separation from the set of wiring boards, and the like. Therefore, at least one of the ceramic layers of the set of wiring boards 2A and 2B may be formed independently for each thermoelectric conversion element 3 and 4.
  • thermoelectric conversion module 103 shows a thermoelectric conversion module 103 according to a third embodiment of the present invention.
  • the thermoelectric conversion modules 101 and 102 are configured by combining the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 one by one.
  • a large thermoelectric conversion module can be configured by combining a plurality of P-type thermoelectric conversion elements 3 and N-type thermoelectric conversion elements 4.
  • the thermoelectric conversion module 103 includes a plurality of P-type thermoelectric conversion elements 3 and N between a pair of wiring boards 5A and 5B of a first wiring board 5A and a second wiring board 5B that are arranged to face each other.
  • the type thermoelectric conversion elements 4 are combined and arranged in a planar shape (two-dimensional).
  • Each P-type thermoelectric conversion element 3 and N-type thermoelectric conversion element 4 are electrically connected in series via the upper and lower wiring boards 5A and 5B.
  • thermoelectric conversion module 103 of 3rd Embodiment the same code
  • the first wiring board 5A is opposite to the joint surface between the plurality of first wiring layers 11A and 12A and the thermoelectric conversion elements 3 and 4 of the first wiring layers 11A and 12A.
  • the second wiring board 5 ⁇ / b> B is a surface opposite to the bonding surface between the second wiring layer 11 ⁇ / b> B and the thermoelectric conversion elements 3 and 4 of the second wiring layer 11 ⁇ / b> B.
  • the ceramic layers 21A and 21B constituting the wiring boards 5A and 5B are independently formed for each thermoelectric conversion element 3 and 4 as in the first embodiment.
  • the thermoelectric conversion module 103 is provided with seven P-type thermoelectric conversion elements 3 and seven N-type thermoelectric conversion elements 4, and a total of 14 thermoelectric conversion elements are provided.
  • Each of the wiring boards 5A and 5B is provided with 16 ceramic layers 21A and 21B that are larger than the number of thermoelectric conversion elements 3 and 4, respectively.
  • first ceramic layers 21A of the first wiring board 5A are connected by either the first wiring layer 11A or the first heat transfer metal layer 31A, and a plurality of parts constituting the first wiring board 5A.
  • the first ceramic layer 21A is integrally provided.
  • the second ceramic layers 21B of the second wiring board 5B are connected by either the second wiring layer 11B or the second heat transfer metal layer 31B, and a plurality of parts constituting the second wiring board 5B.
  • the second ceramic layer 21B is integrally provided.
  • the first wiring substrate 5A disposed on the lower side of FIG. 9 includes seven first wiring layers 11A having a rectangular shape in plan view and a first wiring layer 12A having a square shape in plan view.
  • first wiring layers 11A having a rectangular shape in plan view and a first wiring layer 12A having a square shape in plan view are provided, and as shown in FIG. 11, eight first heat transfer metal layers 31A having a rectangular shape in plan view are provided.
  • the second wiring board 5B disposed on the upper side of FIG. 9 is provided with eight second wiring layers 11B having a rectangular shape in plan view as shown in FIG. 12, and as shown in FIG. Seven second heat transfer metal layers 31B having a rectangular shape in plan view and two second heat transfer metal layers 32B having a square shape in plan view are provided.
  • the first wiring layer 11A of the first wiring board 5A is formed by connecting between the adjacent P-type thermoelectric conversion element 3 and N-type thermoelectric conversion element 4, and the first of both thermoelectric conversion elements 3 and 4 is connected. It is formed between the ceramic layers 21A and 21A.
  • the first wiring layer 12A is independently formed only on the first ceramic layer 21A where the first wiring layer 11A is not formed.
  • the first heat transfer metal layer 31A is formed between both adjacent first wiring layers 11A, 11A, and is formed between both adjacent first ceramic layers 21A, 21A. .
  • the second wiring layer 11B of the second wiring board 5B is formed by connecting between the adjacent P-type thermoelectric conversion element 3 and N-type thermoelectric conversion element 4, and the two thermoelectric conversion elements 3 and 4 It is formed straddling between the second ceramic layers 21B, 21B. Further, the second heat transfer metal layer 31B is formed between the adjacent second wiring layers 11B and 11B, and is formed between the adjacent second ceramic layers 21B and 21B. . On the other hand, the second heat transfer metal layer 32B is independently formed only on the second ceramic layer 21B where the second heat transfer metal layer 32B is not formed.
  • first wiring layer 11A of the first wiring board 5A and the second heat transfer metal layer 31B of the second wiring board 5B are formed in the same shape (same thickness, same plane size) from the same metal material.
  • first wiring layer 12A and the second heat transfer metal layer 32B of the first wiring board 5A are formed in the same shape from the same metal material.
  • first heat transfer metal layer 31A of the first wiring board 5A and the second wiring layer 11B of the second wiring board 5B are formed in the same shape from the same metal material.
  • the first wiring board 5A and the second wiring board 5B are configured by one type of wiring board having the same configuration.
  • the P-type thermoelectric conversion elements 3 and the N-type thermoelectric conversion elements 4 are alternately connected in series between the pair of wiring boards 5A and 5B configured as described above, so that the thermoelectric conversion module 103 is It is configured.
  • thermoelectric conversion module 103 configured as described above.
  • the manufacturing method of the thermoelectric conversion module of 3rd Embodiment is comprised by the flow similar to the flow of the manufacturing method of the thermoelectric conversion module of 1st Embodiment. Therefore, the manufacturing method of the thermoelectric conversion module of the third embodiment will also be described using the flowchart of FIG.
  • the description of the manufacturing process of the second wiring board 5B is omitted in steps S11 to S13. Only the manufacturing process of the first wiring board 5A will be described.
  • FIGS. 14A and 14B First, as shown in FIGS. 14A and 14B, scribe lines 202a and 202b for dividing the plurality of ceramic layers 21A are formed on a large ceramic base material 205 constituting the first ceramic layer 21A, and the ceramic base material is formed. A plurality (16) of first ceramic layer forming regions 203 are partitioned into 205 (scribe line forming step S11).
  • FIG. 14A is a plan view of the ceramic base material 205 in which one surface of the ceramic base material 205 on which the first wiring layers 11A and 12A are formed faces the front side, and FIG. 14B shows the first heat transfer metal layer.
  • positioned the other surface of the ceramic base material 205 in which 31A is formed facing the front side is represented.
  • one surface of the ceramic base material 205 is passed between the planned bonding regions of the first wiring layers 11A and 12A, and the bonding planned regions of the first wiring layers 11A and 12A are excluded.
  • a scribe line 202b is formed at the non-joining portion. Specifically, two scribe lines 202b formed by straight lines penetrating the laterally opposed sides of the ceramic base material 205 are formed.
  • the other surface of the ceramic base material 205 is passed between the region where the first heat transfer metal layer 31A is to be bonded, and the region where the first heat transfer metal layer 31A is to be bonded Scribe lines 202a and 202b are formed in the non-joining portions except for.
  • the three scribe lines 202 a formed by straight lines penetrating the sides facing the vertical direction of the ceramic base material 205 and the straight lines penetrating the sides facing the lateral direction of the ceramic base material 205.
  • One formed scribe line 202b is formed.
  • the ceramic base material 205 has 16 first ceramic layer formation regions 203 divided vertically and horizontally in the size of the outer shape of the first ceramic layer 21A. Aligned and formed.
  • the scribe lines 202a and 202b are not only formed in the non-joined portion of the first wiring layers 11A and 12A and the non-joined portion of the first heat transfer metal layer 31A, but also in the joint portion and the first of the first wiring layer 11A. It can also be formed on both surfaces of the ceramic base material 205 by forming it at the joint portion of the heat transfer metal layer 31A.
  • the first wiring layers 11A and 12A are formed on one surface of the ceramic base material 205 as shown in FIG. 15A, and the other surface of the ceramic base material 205 is shown in FIG. 15B.
  • the first heat transfer metal layer 31A is formed, and a laminate 206 is formed in which the first wiring layers 11A and 12A and the first heat transfer metal layer 31A are bonded to both surfaces of the ceramic base material 205 (metal layer forming step S12). ).
  • a metal plate to be the first wiring layers 11A and 12A is bonded to one surface of the ceramic base material 205, and the first heat transfer metal layer 31A and the other surface of the ceramic base material 205 are connected to each other. After joining the metal plates, the first wiring layers 11A and 12A are patterned on one surface of the ceramic base material 205 by performing an etching process, and the first heat transfer is performed on the other surface of the ceramic base material 205. The metal layer 31A is patterned.
  • the scribe lines 202a and 202b are formed in the non-joined portion except the planned joining region of the first wiring layers 11A and 11B and the non-joined portion except the planned joining region of the first heat transfer metal layer 31A.
  • the metal layer portion (metal plate) formed over the scribe lines 202a and 202b By removing the metal layer portion (metal plate) formed over the scribe lines 202a and 202b, the entire scribe lines 202a and 202b can be exposed.
  • the first wiring layers 11A and 12A and the first heat transfer metal layer 31A can be formed without performing an etching process by bonding a previously patterned metal plate to the ceramic base material 205.
  • the first wiring layers 11A and 12A can also be formed of a sintered body of silver (Ag).
  • the ceramic base material 205 is bent along the scribe lines 202a and 202b by bending the ceramic base material 205 so as to protrude toward the surface on which the scribe lines 202a and 202b are formed.
  • the first ceramic layer forming region 203 is divided into individual first ceramic layers 21A.
  • the first wiring substrate 5A in which the first wiring layers 11A and 12A, the first ceramic layer 21A, and the first heat transfer metal layer 31A are joined is formed (division step S13).
  • the ceramic base material 205 can be easily divided along the scribe lines 202a and 202b. . Further, since the scribe lines 202a and 202b are formed by simple straight lines that pass through the opposing sides of the ceramic base material 205, the ceramic base material 205 can be smoothly divided along the scribe lines 202a and 202b.
  • the second wiring board 5B is manufactured by the same process as the first wiring board 5A.
  • the first wiring board 5A formed in this way has a plurality of first wiring layers 11A and 12A, and the first wiring layers 11A and 11A or 11A and 12A are formed by the first heat transfer metal layer 31A. Are connected to each other. Moreover, since the separated first ceramic layer 21A is connected by the first wiring layer 11A or the first heat transfer metal layer 31A, in the first wiring board 5A, the first wiring layers 11A, 12A, One ceramic layer 21A and the first heat transfer metal layer 31A can be handled integrally.
  • the second wiring board 5B configured similarly to the first wiring board 5A can also handle the second wiring layer 11B, the second ceramic layer 21B, and the second heat transfer metal layers 31B and 32B integrally.
  • thermoelectric conversion module 103 in which P-type thermoelectric conversion elements 3 and N-type thermoelectric conversion elements 4 are alternately connected in series between the wiring boards 5A and 5B is manufactured.
  • each of the wiring layers 11A and 11B and the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 are bonded by bonding using a paste or brazing material, solid phase diffusion bonding by applying a load, or the like. To do.
  • the thermoelectric conversion elements 3 and 4 and the first wiring layers 11A and 11B are interposed between the pair of pressure plates 401A and 401B. And pressurizing uniformly.
  • thermoelectric conversion elements 3, 4 and the first wiring layers 11A, 11B are brought into close contact with each other. Can be pressurized uniformly.
  • a graphite sheet having a cushioning property is disposed between the sandwiching bodies, so that both wiring boards 5A and 5B can be arranged in the plane direction. The respective inclinations of the thermoelectric conversion elements 3 and 4 can be corrected, and the thermoelectric conversion elements 3 and 4 and the wiring boards 5A and 5B can be more uniformly pressurized.
  • the first wiring board 5A has a plurality of first wiring layers 11A and 12A, but the first wiring layers 11A and 12A are connected by the first heat transfer metal layer 31A. Therefore, the first wiring layers 11A and 12A can be handled integrally, and the first wiring board 5A can be easily handled.
  • the second wiring board 5B has a plurality of second wiring layers 11B. Since the second wiring layers 11B are connected by the second heat transfer metal layer 31B, each second wiring layer 11B is connected to each second wiring layer 11B. The wiring layer 11B can be handled integrally, and the second wiring board 5B can be easily handled.
  • the ceramic base material 205 is attached to the scribe line 202a, By dividing along 202b, the first wiring substrate 5A having the first wiring layers 11A, 12A and the separated first ceramic layers 21A arranged in a predetermined pattern can be easily formed.
  • a large thermoelectric conversion module 103 to which a large number of thermoelectric conversion elements 3 and 4 are joined (mounted) can be easily manufactured.
  • each first ceramic layer 21A constituting the first wiring board 5A is formed independently for each thermoelectric conversion element 3, 4.
  • the connection between the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 in the rigid first ceramic layer 21A is disconnected.
  • each second ceramic layer 21B is formed independently for each of the thermoelectric conversion elements 3 and 4, and P in the rigid second ceramic layer 21B is formed.
  • the connection between the type thermoelectric conversion element 3 and the N type thermoelectric conversion element 4 is disconnected. For this reason, the thermoelectric conversion elements 3 and 4 are not restrained from being deformed by the thermal expansion and contraction by the ceramic layers 21A and 21B.
  • first ceramic layers 21A are only connected by either the first wiring layer 11A or the first heat transfer metal layer 31A
  • second wiring layers 11B are connected between the second ceramic layers 21B.
  • they are only connected by any one of the second heat transfer metal layers 31B.
  • the thermal expansion / contraction difference between the adjacent P-type thermoelectric conversion element 3 and N-type thermoelectric conversion element 4 is the first wiring layer 11A or the first heat transfer metal layer 31A connecting the two thermoelectric conversion elements 3 and 4.
  • the connection portion of the second wiring layer 11B or the second heat transfer metal layer 31B is deformed to absorb the dimensional change. For this reason, generation
  • thermoelectric conversion elements 3 and 4 are peeled off from the wiring boards 5A and 5B (the first wiring layers 11A and 12A and the second wiring layer 11B) due to the difference in thermal expansion and contraction between the thermoelectric conversion elements 3 and 4. , 4 can be prevented from cracking. Therefore, the electrical connection between the thermoelectric conversion elements 3 and 4 connected by the first wiring layers 11A and 12A and the second wiring layer 11B can be satisfactorily maintained, and the junction reliability and thermal conductivity of the thermoelectric conversion module 103 can be maintained. In addition, the conductivity can be maintained well.
  • each of the wiring boards 5A and 5B is provided with the ceramic layer 21A or 21B which is an insulating substrate, when the thermoelectric conversion module 103 is installed in a heat source or the like, the ceramic layer 21A or 21B can be connected to the heat source or the like. Contact with the layer 11A, 12A or 11B can be prevented. Therefore, electrical leakage between the heat source and the wiring layer 11A, 12A, or 11B can be reliably avoided, and the insulation state can be maintained satisfactorily.
  • thermoelectric conversion module 103 since the heat transfer metal layers 31A or 31B, 32B are provided on the wiring boards 5A, 5B, when the thermoelectric conversion module 103 is installed in a heat source or the like, the heat transfer metal layers 31A, 31B, 32B Etc. and the thermoelectric conversion module 103 can be improved in adhesion, and heat transfer can be improved. Therefore, the thermoelectric exchange performance (power generation efficiency) of the thermoelectric conversion module 103 can be improved.
  • the first wiring boards 2A and 5A and the second wiring boards 2B and 5B are formed by a plurality of first thermoelectric conversion elements 3 and 4 formed independently of each other.
  • the first ceramic layer 21A or the second ceramic layer 21B is provided, it is separated into a plurality of thermoelectric conversion elements 3 and 4 as in the first wiring boards 6A to 6C shown in FIGS. 16A to 18B.
  • the first ceramic layers 22A to 22C separated between the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 may be used.
  • the first wiring board 6A shown in FIGS. 16A and 16B includes the first wiring layers 11A and 12A and the first heat transfer metal layer 31A similar to the first wiring board 5A of the thermoelectric conversion module 103 of the second embodiment. It has the pattern which consists of.
  • the first ceramic layer 22A is separated for each pair of adjacent (two) thermoelectric conversion elements 3 and 4, and is constituted by a total of eight first ceramic layers 22A.
  • the first ceramic layers 22A and 22A are connected by the first wiring layer 11A, and a plurality of first ceramic layers 22A constituting the first wiring board 6A are integrally formed. Is provided.
  • the first wiring layer 11A of the first wiring board 6A is formed by connecting between a pair of the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4, and both the thermoelectric conversion elements 3 and 4 are connected. Formed between the first ceramic layers 22A and 22A.
  • the rigid first ceramic layer 22A is divided between any of the P-type thermoelectric conversion elements 3 and the N-type thermoelectric conversion elements 4. A plurality of them are provided. For this reason, between the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4, the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 are formed by the first ceramic layer 22A bonded to each other. The deformation accompanying the thermal expansion and contraction is not restricted. Further, the difference in thermal expansion and contraction between the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 in the separation portion of each first ceramic layer 22A is that of the first wiring layer 11A connecting the two thermoelectric conversion elements 3 and 4. The connecting portion can be deformed to absorb the dimensional change. Therefore, it is possible to suppress the generation of thermal stress generated in each thermoelectric conversion element 3, 4 due to the thermal expansion / contraction difference of each thermoelectric conversion element 3, 4.
  • first ceramic layers can be further reduced as compared with the first wiring board 6A shown in FIGS. 16A and 16B.
  • the first ceramic layer 22B of the first wiring board 6B shown in FIGS. 17A and 17B is separated into four thermoelectric conversion elements 3 and 4, and is constituted by a total of four first ceramic layers 22B.
  • the first ceramic layer 22C of the first wiring board 6C shown in FIGS. 18A and 18B is separated into eight thermoelectric conversion elements 3 and 4, and is constituted by a total of two first ceramic layers 22C.
  • the first ceramic layers 22B and 22C that are provided in a divided manner between any of the P-type thermoelectric conversion elements 3 and the N-type thermoelectric conversion elements 4, these P-type thermoelectric conversion elements are provided. 3 and the N-type thermoelectric conversion element 4, the first ceramic layers 22 ⁇ / b> B and 22 ⁇ / b> C bonded to each other cause deformation due to thermal expansion and contraction between the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4. There is no restraint. Further, the difference in thermal expansion and contraction between the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 in the separated portions of the first ceramic layers 22B and 22C is the first wiring layer that connects the thermoelectric conversion elements 3 and 4 together. The connecting portion of 11A can be deformed to absorb the dimensional change. Therefore, it is possible to suppress the generation of thermal stress generated in each thermoelectric conversion element 3, 4 due to the thermal expansion / contraction difference of each thermoelectric conversion element 3, 4.
  • thermoelectric conversion elements 3 and 3 are caused by the thermal expansion / contraction difference of the thermoelectric conversion elements 3 and 4.
  • the generation of thermal stress generated in 4 can be suppressed. Therefore, it is possible to prevent the thermoelectric conversion elements 3 and 4 from being peeled off from the first wiring boards 6A to 6C (first wiring layer 11A) and the thermoelectric conversion elements 3 and 4 from being cracked. Therefore, the electrical connection between the thermoelectric conversion elements 3 and 4 connected by the first wiring layer 11A can be maintained satisfactorily, and the junction reliability, thermal conductivity, and conductivity of the thermoelectric conversion module can be maintained satisfactorily.
  • the first wiring boards 2A, 5A, 6A to 6C of the above embodiment have the first heat transfer metal layers 31A and 32A separated into a plurality of patterns, respectively, but in FIGS. 19A and 19B, As shown in the first wiring board 7A, the first heat transfer metal layer 31C can be configured to have a large size connecting three or more first ceramic layers 22A. In this case, since each first ceramic layer 22A can be connected by the first heat transfer metal layer 31C, the first wiring board 7A is integrated and configured without connecting each first ceramic layer 22A by the first wiring layer 11A. it can.
  • thermoelectric conversion module using the first wiring board 7A shown in FIG. 19A and FIG. 19B a plurality of first ceramic layers 22A are provided between any one of the P-type thermoelectric conversion elements 3 and the N-type thermoelectric conversion elements 4.
  • first ceramic layers 22A are provided between any one of the P-type thermoelectric conversion elements 3 and the N-type thermoelectric conversion elements 4.
  • thermoelectric conversion element 3 the difference in thermal expansion and contraction between the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4 in the separated portion of each first ceramic layer 22A is the first heat transfer metal layer that connects the two thermoelectric conversion elements 3 and 4 together.
  • the connecting portion of 31C can be deformed to absorb the dimensional change. Therefore, it is possible to suppress the generation of thermal stress generated in each thermoelectric conversion element 3, 4 due to the thermal expansion / contraction difference of each thermoelectric conversion element 3, 4.
  • the second wiring layer, the second ceramic layer, and the second heat transfer metal layer have the same configuration as the first wiring layer, the first ceramic layer, and the second heat transfer metal layer, respectively. Can do.
  • thermoelectric conversion module that can prevent the thermoelectric conversion element from being damaged due to a difference in thermal expansion and contraction and is excellent in bonding reliability, thermal conductivity, and conductivity.
  • thermoelectric conversion element thermoelectric conversion element
  • N-type thermoelectric conversion element thermoelectric conversion element 11A, 12A First wiring layer 11B, 12B Second wiring layer 21A, 22A, 22B, 22C First ceramic layer 21B Second ceramic layer 31A, 32A, 31C First heat transfer metal layer 31B, 32B Second heat transfer metal layer 41

Abstract

L'invention concerne un module de conversion thermoélectrique comprenant : une pluralité d'éléments de conversion thermoélectrique comprenant un élément de conversion thermoélectrique de type P et un élément de conversion thermoélectrique de type N ayant des coefficients de dilatation linéaire différents; et un premier substrat de câblage disposé sur un côté d'extrémité de la pluralité d'éléments de conversion thermoélectrique, le premier substrat de câblage ayant une première couche de câblage dans laquelle l'élément de conversion thermoélectrique de type P adjacent et l'élément de conversion thermoélectrique de type N sont joints, et des premières couches de céramique dans lesquelles les éléments de conversion thermoélectrique de type P et les éléments de conversion thermoélectrique de type N de la première couche de câblage sont joints à la surface opposée et sont séparés de manière multiple, chaque première couche de céramique étant séparée de l'élément de conversion thermoélectrique de type P ou de l'élément de conversion thermoélectrique de type N.
PCT/JP2018/007801 2017-03-08 2018-03-01 Module de conversion thermoélectrique et son procédé de fabrication WO2018163958A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP18763806.9A EP3595023A4 (fr) 2017-03-08 2018-03-01 Module de conversion thermoélectrique et son procédé de fabrication
CN201880011824.5A CN110301051A (zh) 2017-03-08 2018-03-01 热电转换模块及其制造方法
US16/491,734 US20200013941A1 (en) 2017-03-08 2018-03-01 Thermoelectric conversion module and method of manufacturing the same
KR1020197028503A KR20190121832A (ko) 2017-03-08 2018-03-01 열전 변환 모듈 및 그 제조 방법

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JP2017043487 2017-03-08
JP2017-163484 2017-08-28
JP2017163484A JP6933055B2 (ja) 2017-03-08 2017-08-28 熱電変換モジュール及びその製造方法

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ES2931217A1 (es) * 2021-06-18 2022-12-27 Univ Madrid Autonoma Dispositivo y generador termoelectrico

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